Page 143 - Transistoren - FETs, MOSFETs - Arrays | Diskrete Halbleiterprodukte

Teilenummer	Hersteller	Beschreibung	Paket	Lager	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7755TRPBF	Infineon Technologies	MOSFET 2P-CH 20V 3.9A 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.9A Rds On (Max) @ Id, Vgs: 51 mOhm @ 3.7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Paket: 8-TSSOP (0.173", 4.40mm Width)	Lager2.768	Logic Level Gate	20V	3.9A	51 mOhm @ 3.7A, 4.5V	1.2V @ 250µA	17nC @ 4.5V	1090pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SI4967DY-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 12V 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.5A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Paket: 8-SOIC (0.154", 3.90mm Width)	Lager7.856	Logic Level Gate	12V	-	23 mOhm @ 7.5A, 4.5V	450mV @ 250µA (Min)	55nC @ 10V	-	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI4565ADY-T1-E3	Vishay Siliconix	MOSFET N/P-CH 40V 6.6A 8-SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.6A, 5.6A Rds On (Max) @ Id, Vgs: 39 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 20V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Paket: 8-SOIC (0.154", 3.90mm Width)	Lager425.244	Standard	40V	6.6A, 5.6A	39 mOhm @ 5A, 10V	2.2V @ 250µA	22nC @ 10V	625pF @ 20V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI1034X-T1-E3	Vishay Siliconix	MOSFET 2N-CH 20V 0.18A SOT563F FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 180mA Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	Paket: SOT-563, SOT-666	Lager122.292	Logic Level Gate	20V	180mA	5 Ohm @ 200mA, 4.5V	1.2V @ 250µA	0.75nC @ 4.5V	-	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
HAT2038R-EL-E	Renesas Electronics America	MOSFET 2N-CH 60V 5A 8SOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 58 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Power - Max: 3W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Paket: 8-SOIC (0.154", 3.90mm Width)	Lager18.768	Logic Level Gate	60V	5A	58 mOhm @ 3A, 10V	2.2V @ 1mA	-	520pF @ 10V	3W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
ALD210814SCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 0.08A 16SOIC FET Type: 4 N-Channel, Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	Paket: 16-SOIC (0.154", 3.90mm Width)	Lager7.216	Logic Level Gate	10.6V	80mA	-	20mV @ 10µA	-	-	500mW	-	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
AON6932A	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 22A/36A 8DFN FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A, 36A Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1037pF @ 15V Power - Max: 3.6W, 4.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-DFN (5x6)	Paket: 8-PowerVDFN	Lager31.224	Logic Level Gate	30V	22A, 36A	5 mOhm @ 20A, 10V	2.2V @ 250µA	22nC @ 10V	1037pF @ 15V	3.6W, 4.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-DFN (5x6)
TSM4946DCS RLG	TSC America Inc.	MOSFET, DUAL, N-CHANNEL, TRENCH, FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 24V Power - Max: 2.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Paket: 8-SOIC (0.154", 3.90mm Width)	Lager414.252	Standard	60V	4.5A (Ta)	55 mOhm @ 4.5A, 10V	3V @ 250µA	18nC @ 10V	910pF @ 24V	2.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
IRF9362TRPBF	Infineon Technologies	MOSFET 2P-CH 30V 8A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Paket: 8-SOIC (0.154", 3.90mm Width)	Lager369.960	Logic Level Gate	30V	8A	21 mOhm @ 8A, 10V	2.4V @ 25µA	39nC @ 10V	1300pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7309TRPBF	Infineon Technologies	MOSFET N/P-CH 30V 4A/3A 8SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3A Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Paket: 8-SOIC (0.154", 3.90mm Width)	Lager460.920	Standard	30V	4A, 3A	50 mOhm @ 2.4A, 10V	1V @ 250µA	25nC @ 4.5V	520pF @ 15V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NTHD3100CT1G	ON Semiconductor	MOSFET N/P-CH 20V CHIPFET FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A, 3.2A Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET?	Paket: 8-SMD, Flat Lead	Lager32.040	Logic Level Gate	20V	2.9A, 3.2A	80 mOhm @ 2.9A, 4.5V	1.2V @ 250µA	2.3nC @ 4.5V	165pF @ 10V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	ChipFET?
ZXMHN6A07T8TA	Diodes Incorporated	MOSFET 4N-CH 60V 1.4A SM8 FET Type: 4 N-Channel (H-Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.4A Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-223-8 Supplier Device Package: SM8	Paket: SOT-223-8	Lager46.800	Logic Level Gate	60V	1.4A	300 mOhm @ 1.8A, 10V	3V @ 250µA	3.2nC @ 10V	166pF @ 40V	1.6W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-8	SM8
CMRDM3575 TR	Central Semiconductor Corp	MOSFET N/P-CH 20V SOT963 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 160mA, 140mA Rds On (Max) @ Id, Vgs: 3 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.46nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 15V Power - Max: 125mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	Paket: SOT-963	Lager5.856	Logic Level Gate	20V	160mA, 140mA	3 Ohm @ 100mA, 4.5V	1V @ 250µA	0.46nC @ 4.5V	9pF @ 15V	125mW	-65°C ~ 150°C (TJ)	Surface Mount	SOT-963	SOT-963
NTJD5121NT2G	ON Semiconductor	MOSFET 2N-CH 60V 0.295A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 295mA Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	Paket: 6-TSSOP, SC-88, SOT-363	Lager108.012	Logic Level Gate	60V	295mA	1.6 Ohm @ 500mA, 10V	2.5V @ 250µA	0.9nC @ 4.5V	26pF @ 20V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
FDMA1024NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 5A 6-MICROFET FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 54 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-MicroFET (2x2)	Paket: 6-VDFN Exposed Pad	Lager260.232	Logic Level Gate	20V	5A	54 mOhm @ 5A, 4.5V	1V @ 250µA	7.3nC @ 4.5V	500pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	6-MicroFET (2x2)
FDC6561AN	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 2.5A SSOT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 95 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: SuperSOT?-6	Paket: SOT-23-6 Thin, TSOT-23-6	Lager1.518.564	Logic Level Gate	30V	2.5A	95 mOhm @ 2.5A, 10V	3V @ 250µA	3.2nC @ 5V	220pF @ 15V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SuperSOT?-6
AOSD21307	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 30V 9A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1995pF @ 15V Power - Max: 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Paket: -	Lager25.146	-	30V	9A (Ta)	16mOhm @ 9A, 10V	2.3V @ 250µA	51nC @ 10V	1995pF @ 15V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
NVMFD5C462NLT1G	onsemi	MOSFET 2N-CH 40V 18A/84A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 84A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Power - Max: 3W (Ta), 50W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	Paket: -	Request a Quote	-	40V	18A (Ta), 84A (Tc)	4.7mOhm @ 10A, 10V	2.2V @ 40µA	11nC @ 4.5V	1300pF @ 25V	3W (Ta), 50W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
NTMFD5C466NT1G	onsemi	MOSFET 40V S08FL DUAL FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Lager660	-	-	-	-	-	-	-	-	-	-	-	-
AONP36320	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 26A/100A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc), 27A (Ta), 103A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V, 3mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V, 1650pF @ 15V Power - Max: 3.3W (Ta), 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-DFN-EP (3.3x3.3)	Paket: -	Request a Quote	-	30V	26A (Ta), 100A (Tc), 27A (Ta), 103A (Tc)	3.2mOhm @ 20A, 10V, 3mOhm @ 20A, 10V	2.1V @ 250µA	40nC @ 10V	1700pF @ 15V, 1650pF @ 15V	3.3W (Ta), 50W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-DFN-EP (3.3x3.3)
DMN2041UVT-13	Diodes Incorporated	MOSFET 2N-CH 20V 5.8A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 689pF @ 10V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	Paket: -	Request a Quote	-	20V	5.8A (Ta)	28mOhm @ 8.2A, 4.5V	900mV @ 250µA	9.1nC @ 4.5V	689pF @ 10V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
NXH040F120MNF1PTG	onsemi	SIC 4N-CH 1200V 30A 22PIM FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V Vgs(th) (Max) @ Id: 4.3V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V Power - Max: 74W (Tj) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: 22-PIM (33.8x42.5)	Paket: -	Request a Quote	-	1200V (1.2kV)	30A (Tc)	56mOhm @ 25A, 20V	4.3V @ 10mA	122.1nC @ 20V	1505pF @ 800V	74W (Tj)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	22-PIM (33.8x42.5)
RJK0222DNS-00-J5	Renesas Electronics Corporation	MOSFET 2N-CH 25V 14A/16A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 14A, 16A Rds On (Max) @ Id, Vgs: 9.2mOhm @ 7A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 10V Power - Max: 8W, 10W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-DFN (5x6)	Paket: -	Request a Quote	Logic Level Gate, 4.5V Drive	25V	14A, 16A	9.2mOhm @ 7A, 10V	-	6.2nC @ 4.5V	810pF @ 10V	8W, 10W	150°C (TJ)	Surface Mount	8-WDFN Exposed Pad	8-DFN (5x6)
PSMN025-100HSX	Nexperia USA Inc.	MOSFET 2N-CH 100V 29.5A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 29.5A (Ta) Rds On (Max) @ Id, Vgs: 24.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 38.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2436pF @ 25V Power - Max: 68W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	Paket: -	Lager4.800	-	100V	29.5A (Ta)	24.5mOhm @ 10A, 10V	4V @ 1mA	38.1nC @ 10V	2436pF @ 25V	68W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
PSMN013-60HLX	Nexperia USA Inc.	MOSFET 2N-CH 60V 40A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 5V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2953pF @ 25V Power - Max: 64W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	Paket: -	Lager4.770	-	60V	40A (Ta)	12.5mOhm @ 10A, 5V	2.1V @ 1mA	22.4nC @ 5V	2953pF @ 25V	64W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
2N7002DWK-7	Diodes Incorporated	MOSFET 2N-CH 60V 0.261A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 261mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Power - Max: 330mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Paket: -	Lager8.982	-	60V	261mA (Ta)	3Ohm @ 200mA, 10V	2V @ 250µA	1.04nC @ 10V	41pF @ 30V	330mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
SQJQ980EL-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 80V 36A PPAK8X8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1995pF @ 40V Power - Max: 187W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Dual Supplier Device Package: PowerPAK® 8 x 8 Dual	Paket: -	Lager12.000	-	80V	36A (Tc)	13.5mOhm @ 5A, 10V	2.5V @ 250µA	36nC @ 10V	1995pF @ 40V	187W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 8 x 8 Dual	PowerPAK® 8 x 8 Dual
SD5400CY-SOIC-14L-ROHS	Linear Integrated Systems, Inc.	MOSFET 4N-CH 20V 0.05A 14SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Rds On (Max) @ Id, Vgs: 75Ohm @ 1mA, 5V Vgs(th) (Max) @ Id: 1.5V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	Paket: -	Lager16.182	-	20V	50mA (Ta)	75Ohm @ 1mA, 5V	1.5V @ 1µA	-	-	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	14-SOIC (0.154", 3.90mm Width)	14-SOIC

IRF7755TRPBF

Infineon Technologies

MOSFET 2P-CH 20V 3.9A 8TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.9A
Rds On (Max) @ Id, Vgs: 51 mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

Paket: 8-TSSOP (0.173", 4.40mm Width)

Lager2.768

Logic Level Gate

20V

3.9A

51 mOhm @ 3.7A, 4.5V

1.2V @ 250µA

17nC @ 4.5V

1090pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SI4967DY-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 12V 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.5A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

Paket: 8-SOIC (0.154", 3.90mm Width)

Lager7.856

Logic Level Gate

12V

-

23 mOhm @ 7.5A, 4.5V

450mV @ 250µA (Min)

55nC @ 10V

-

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI4565ADY-T1-E3

Vishay Siliconix

MOSFET N/P-CH 40V 6.6A 8-SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 5.6A
Rds On (Max) @ Id, Vgs: 39 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 20V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

Paket: 8-SOIC (0.154", 3.90mm Width)

Lager425.244

Standard

40V

6.6A, 5.6A

39 mOhm @ 5A, 10V

2.2V @ 250µA

22nC @ 10V

625pF @ 20V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI1034X-T1-E3

Vishay Siliconix

MOSFET 2N-CH 20V 0.18A SOT563F

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA
Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

Paket: SOT-563, SOT-666

Lager122.292

Logic Level Gate

20V

180mA

5 Ohm @ 200mA, 4.5V

1.2V @ 250µA

0.75nC @ 4.5V

-

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

HAT2038R-EL-E

Renesas Electronics America

MOSFET 2N-CH 60V 5A 8SOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 58 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Power - Max: 3W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

Paket: 8-SOIC (0.154", 3.90mm Width)

Lager18.768

Logic Level Gate

60V

5A

58 mOhm @ 3A, 10V

2.2V @ 1mA

-

520pF @ 10V

3W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

ALD210814SCL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 0.08A 16SOIC

FET Type: 4 N-Channel, Matched Pair
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 20mV @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 500mW
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

Paket: 16-SOIC (0.154", 3.90mm Width)

Lager7.216

Logic Level Gate

10.6V

80mA

-

20mV @ 10µA

-

500mW

-

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

AON6932A

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 22A/36A 8DFN

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A, 36A
Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1037pF @ 15V
Power - Max: 3.6W, 4.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (5x6)

Paket: 8-PowerVDFN

Lager31.224

Logic Level Gate

30V

22A, 36A

5 mOhm @ 20A, 10V

2.2V @ 250µA

22nC @ 10V

1037pF @ 15V

3.6W, 4.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-DFN (5x6)

TSM4946DCS RLG

TSC America Inc.

MOSFET, DUAL, N-CHANNEL, TRENCH,

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 24V
Power - Max: 2.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

Paket: 8-SOIC (0.154", 3.90mm Width)

Lager414.252

Standard

60V

4.5A (Ta)

55 mOhm @ 4.5A, 10V

3V @ 250µA

18nC @ 10V

910pF @ 24V

2.4W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

IRF9362TRPBF

Infineon Technologies

MOSFET 2P-CH 30V 8A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

Paket: 8-SOIC (0.154", 3.90mm Width)

Lager369.960

Logic Level Gate

30V

8A

21 mOhm @ 8A, 10V

2.4V @ 25µA

39nC @ 10V

1300pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF7309TRPBF

Infineon Technologies

MOSFET N/P-CH 30V 4A/3A 8SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

Paket: 8-SOIC (0.154", 3.90mm Width)

Lager460.920

Standard

30V

4A, 3A

50 mOhm @ 2.4A, 10V

1V @ 250µA

25nC @ 4.5V

520pF @ 15V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NTHD3100CT1G

ON Semiconductor

MOSFET N/P-CH 20V CHIPFET

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 3.2A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: ChipFET?

Paket: 8-SMD, Flat Lead

Lager32.040

Logic Level Gate

20V

2.9A, 3.2A

80 mOhm @ 2.9A, 4.5V

1.2V @ 250µA

2.3nC @ 4.5V

165pF @ 10V

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

ChipFET?

ZXMHN6A07T8TA

Diodes Incorporated

MOSFET 4N-CH 60V 1.4A SM8

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 1.4A
Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V
Power - Max: 1.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-223-8
Supplier Device Package: SM8

Paket: SOT-223-8

Lager46.800

Logic Level Gate

60V

1.4A

300 mOhm @ 1.8A, 10V

3V @ 250µA

3.2nC @ 10V

166pF @ 40V

1.6W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-223-8

SM8

CMRDM3575 TR

Central Semiconductor Corp

MOSFET N/P-CH 20V SOT963

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 160mA, 140mA
Rds On (Max) @ Id, Vgs: 3 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.46nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 15V
Power - Max: 125mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

Paket: SOT-963

Lager5.856

Logic Level Gate

20V

160mA, 140mA

3 Ohm @ 100mA, 4.5V

1V @ 250µA

0.46nC @ 4.5V

9pF @ 15V

125mW

-65°C ~ 150°C (TJ)

Surface Mount

SOT-963

NTJD5121NT2G

ON Semiconductor

MOSFET 2N-CH 60V 0.295A SOT363

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 295mA
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

Paket: 6-TSSOP, SC-88, SOT-363

Lager108.012

Logic Level Gate

60V

295mA

1.6 Ohm @ 500mA, 10V

2.5V @ 250µA

0.9nC @ 4.5V

26pF @ 20V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

FDMA1024NZ

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 5A 6-MICROFET

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 54 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-MicroFET (2x2)

Paket: 6-VDFN Exposed Pad

Lager260.232

Logic Level Gate

20V

5A

54 mOhm @ 5A, 4.5V

1V @ 250µA

7.3nC @ 4.5V

500pF @ 10V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

6-VDFN Exposed Pad

6-MicroFET (2x2)

FDC6561AN

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 2.5A SSOT6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 95 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SuperSOT?-6

Paket: SOT-23-6 Thin, TSOT-23-6

Lager1.518.564

Logic Level Gate

30V

2.5A

95 mOhm @ 2.5A, 10V

3V @ 250µA

3.2nC @ 5V

220pF @ 15V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

SuperSOT?-6

AOSD21307

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 9A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1995pF @ 15V
Power - Max: 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

Paket: -

Lager25.146

-

30V

9A (Ta)

16mOhm @ 9A, 10V

2.3V @ 250µA

51nC @ 10V

1995pF @ 15V

2W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

NVMFD5C462NLT1G

onsemi

MOSFET 2N-CH 40V 18A/84A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 84A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Power - Max: 3W (Ta), 50W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

Paket: -

Request a Quote

-

40V

18A (Ta), 84A (Tc)

4.7mOhm @ 10A, 10V

2.2V @ 40µA

11nC @ 4.5V

1300pF @ 25V

3W (Ta), 50W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)

NTMFD5C466NT1G

onsemi

MOSFET 40V S08FL DUAL

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Lager660

-

AONP36320

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 26A/100A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc), 27A (Ta), 103A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V, 3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V, 1650pF @ 15V
Power - Max: 3.3W (Ta), 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN-EP (3.3x3.3)

Paket: -

Request a Quote

-

30V

26A (Ta), 100A (Tc), 27A (Ta), 103A (Tc)

3.2mOhm @ 20A, 10V, 3mOhm @ 20A, 10V

2.1V @ 250µA

40nC @ 10V

1700pF @ 15V, 1650pF @ 15V

3.3W (Ta), 50W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-DFN-EP (3.3x3.3)

DMN2041UVT-13

Diodes Incorporated

MOSFET 2N-CH 20V 5.8A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 689pF @ 10V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

Paket: -

Request a Quote

-

20V

5.8A (Ta)

28mOhm @ 8.2A, 4.5V

900mV @ 250µA

9.1nC @ 4.5V

689pF @ 10V

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

NXH040F120MNF1PTG

onsemi

SIC 4N-CH 1200V 30A 22PIM

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V
Power - Max: 74W (Tj)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: 22-PIM (33.8x42.5)

Paket: -

Request a Quote

-

1200V (1.2kV)

30A (Tc)

56mOhm @ 25A, 20V

4.3V @ 10mA

122.1nC @ 20V

1505pF @ 800V

74W (Tj)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

22-PIM (33.8x42.5)

RJK0222DNS-00-J5

Renesas Electronics Corporation

MOSFET 2N-CH 25V 14A/16A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 14A, 16A
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 10V
Power - Max: 8W, 10W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-DFN (5x6)

Paket: -

Request a Quote

Logic Level Gate, 4.5V Drive

25V

14A, 16A

9.2mOhm @ 7A, 10V

-

6.2nC @ 4.5V

810pF @ 10V

8W, 10W

150°C (TJ)

Surface Mount

8-WDFN Exposed Pad

8-DFN (5x6)

PSMN025-100HSX

Nexperia USA Inc.

MOSFET 2N-CH 100V 29.5A LFPAK56D

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 29.5A (Ta)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 38.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2436pF @ 25V
Power - Max: 68W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

Paket: -

Lager4.800

-

100V

29.5A (Ta)

24.5mOhm @ 10A, 10V

4V @ 1mA

38.1nC @ 10V

2436pF @ 25V

68W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

PSMN013-60HLX

Nexperia USA Inc.

MOSFET 2N-CH 60V 40A LFPAK56D

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2953pF @ 25V
Power - Max: 64W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

Paket: -

Lager4.770

-

60V

40A (Ta)

12.5mOhm @ 10A, 5V

2.1V @ 1mA

22.4nC @ 5V

2953pF @ 25V

64W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

2N7002DWK-7

Diodes Incorporated

MOSFET 2N-CH 60V 0.261A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 261mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
Power - Max: 330mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

Paket: -

Lager8.982

-

60V

261mA (Ta)

3Ohm @ 200mA, 10V

2V @ 250µA

1.04nC @ 10V

41pF @ 30V

330mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

SQJQ980EL-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 80V 36A PPAK8X8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1995pF @ 40V
Power - Max: 187W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8 Dual
Supplier Device Package: PowerPAK® 8 x 8 Dual

Paket: -

Lager12.000

-

80V

36A (Tc)

13.5mOhm @ 5A, 10V

2.5V @ 250µA

36nC @ 10V

1995pF @ 40V

187W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® 8 x 8 Dual

SD5400CY-SOIC-14L-ROHS

Linear Integrated Systems, Inc.

MOSFET 4N-CH 20V 0.05A 14SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 75Ohm @ 1mA, 5V
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SOIC

Paket: -

Lager16.182

-

20V

50mA (Ta)

75Ohm @ 1mA, 5V

1.5V @ 1µA

-

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

14-SOIC (0.154", 3.90mm Width)

14-SOIC