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Transistoren - FETs, MOSFETs - Arrays

Aufzeichnungen 5.684
Page  22/203
Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRF7754
Infineon Technologies

MOSFET 2P-CH 12V 5.5A 8-TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1984pF @ 6V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
Paket: 8-TSSOP (0.173", 4.40mm Width)
Lager4.720
Logic Level Gate
12V
5.5A
25 mOhm @ 5.4A, 4.5V
900mV @ 250µA
22nC @ 4.5V
1984pF @ 6V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
VEC2616-TL-H-Z
ON Semiconductor

MOSFET N/P-CH 60V 3A/2.5A VEC8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
  • Power - Max: 1W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: SOT-28FL/VEC8
Paket: 8-SMD, Flat Lead
Lager3.376
Logic Level Gate, 4V Drive
60V
3A, 2.5A
80 mOhm @ 1.5A, 10V
-
10nC @ 10V
505pF @ 20V
1W
-
Surface Mount
8-SMD, Flat Lead
SOT-28FL/VEC8
TMC1340-SO
Trinamic Motion Control GmbH

MOSFET 2N/2P-CH 30V 8SOIC

  • FET Type: 2 N and 2 P-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A, 4.1A
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 25V
  • Power - Max: 1.38W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager3.200
Standard
30V
5.5A, 4.1A
33 mOhm @ 5A, 10V
3V @ 250µA
10nC @ 4.5V
960pF @ 25V
1.38W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI4920DY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager596.532
Logic Level Gate
30V
-
25 mOhm @ 6.9A, 10V
1V @ 250µA (Min)
23nC @ 5V
-
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI7980DP-T1-E3
Vishay Siliconix

MOSFET 2N-CH 20V 8A PPAK SO-8

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 10V
  • Power - Max: 19.8W, 21.9W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
Paket: PowerPAK? SO-8 Dual
Lager105.360
Standard
20V
8A
22 mOhm @ 5A, 10V
2.5V @ 250µA
27nC @ 10V
1010pF @ 10V
19.8W, 21.9W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
SI5511DC-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 30V 4A 1206-8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.8A, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
  • Power - Max: 3.1W, 2.6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET?
Paket: 8-SMD, Flat Lead
Lager3.840
Logic Level Gate
30V
4A, 3.6A
55 mOhm @ 4.8A, 4.5V
2V @ 250µA
7.1nC @ 5V
435pF @ 15V
3.1W, 2.6W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
1206-8 ChipFET?
hot SSM6P15FE(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET 2P-CH 30V 0.1A ES6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.7V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)
Paket: SOT-563, SOT-666
Lager1.056.000
Logic Level Gate
30V
100mA
12 Ohm @ 10mA, 4V
1.7V @ 100µA
-
9.1pF @ 3V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6 (1.6x1.6)
FDG6303N_D87Z
Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 0.5A SC70-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 500mA
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
Paket: 6-TSSOP, SC-88, SOT-363
Lager5.408
Logic Level Gate
25V
500mA
450 mOhm @ 500mA, 4.5V
1.5V @ 250µA
2.3nC @ 4.5V
50pF @ 10V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
BSO207PHXUMA1
Infineon Technologies

MOSFET 2P-CH 20V 5A 8DSO

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 44µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 15V
  • Power - Max: 1.6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager6.096
Logic Level Gate
20V
5A
45 mOhm @ 5.7A, 4.5V
1.2V @ 44µA
16nC @ 4.5V
1650pF @ 15V
1.6W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8
hot EFC4618R-P-TR
ON Semiconductor

MOSFET 2N-CH EFCP1818

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 25.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.6W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-XBGA, 4-FCBGA
  • Supplier Device Package: EFCP1313-4CC-037
Paket: 4-XBGA, 4-FCBGA
Lager43.620
Logic Level Gate, 2.5V Drive
-
-
-
-
25.4nC @ 4.5V
-
1.6W
150°C (TJ)
Surface Mount
4-XBGA, 4-FCBGA
EFCP1313-4CC-037
hot NTJD4105CT1G
ON Semiconductor

MOSFET N/P-CH 20V/8V SOT-363

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V, 8V
  • Current - Continuous Drain (Id) @ 25°C: 630mA, 775mA
  • Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
  • Power - Max: 270mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
Paket: 6-TSSOP, SC-88, SOT-363
Lager1.445.352
Logic Level Gate
20V, 8V
630mA, 775mA
375 mOhm @ 630mA, 4.5V
1.5V @ 250µA
3nC @ 4.5V
46pF @ 20V
270mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
hot FDY3000NZ
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 0.6A SC89

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 600mA
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
  • Power - Max: 446mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SC-89-6
Paket: SOT-563, SOT-666
Lager160.128
Logic Level Gate
20V
600mA
700 mOhm @ 600mA, 4.5V
1.3V @ 250µA
1.1nC @ 4.5V
60pF @ 10V
446mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SC-89-6
hot SIA778DJ-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 12V/20V SC70-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A, 1.5A
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V
  • Power - Max: 6.5W, 5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-70-6 Dual
  • Supplier Device Package: PowerPAK? SC-70-6 Dual
Paket: PowerPAK? SC-70-6 Dual
Lager120.012
Logic Level Gate
12V, 20V
4.5A, 1.5A
29 mOhm @ 5A, 4.5V
1V @ 250µA
15nC @ 8V
500pF @ 6V
6.5W, 5W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Dual
PowerPAK? SC-70-6 Dual
IPG20N06S415AATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V
  • Power - Max: 50W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-10
Paket: 8-PowerVDFN
Lager5.680
Standard
60V
20A
15.5 mOhm @ 17A, 10V
4V @ 20µA
29nC @ 10V
2260pF @ 25V
50W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-10
QH8KA1TCR
Rohm Semiconductor

30V NCH+NCH POWER MOSFET

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 73 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V
  • Power - Max: 2.4W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
Paket: 8-SMD, Flat Lead
Lager2.688
-
30V
4.5A
73 mOhm @ 4.5A, 10V
2.5V @ 1mA
3nC @ 10V
125pf @ 15V
2.4W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
TT8K2TR
Rohm Semiconductor

MOSFET 2N-CH 30V 2.5A TSST8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
  • Power - Max: 1.25W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-TSST
Paket: 8-SMD, Flat Lead
Lager23.250
Logic Level Gate
30V
2.5A
90 mOhm @ 2.5A, 4.5V
1.5V @ 1mA
3.2nC @ 4.5V
180pF @ 10V
1.25W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-TSST
FDMQ8203
Fairchild/ON Semiconductor

MOSFET 2N/2P-CH 100V/80V 12-MLP

  • FET Type: 2 N and 2 P-Channel (H-Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 100V, 80V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 50V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-WDFN Exposed Pad
  • Supplier Device Package: 12-MLP (5x4.5)
Paket: 12-WDFN Exposed Pad
Lager21.918
Logic Level Gate
100V, 80V
3.4A, 2.6A
110 mOhm @ 3A, 10V
4V @ 250µA
5nC @ 10V
210pF @ 50V
2.5W
-55°C ~ 150°C (TJ)
Surface Mount
12-WDFN Exposed Pad
12-MLP (5x4.5)
FS70UMJ-06F-REN
Renesas Electronics Corporation

MOSFET N-CH 60V 70A

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
DMC3061SVT-13
Diodes Incorporated

MOSFET N/P-CH 30V 3.4A TSOT23-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.7A (Ta)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V, 6.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V, 287pF @ 15V
  • Power - Max: 880mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-23-6
Paket: -
Request a Quote
-
30V
3.4A (Ta), 2.7A (Ta)
60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
1.8V @ 250µA, 2.2V @ 250µA
6.6nC @ 10V, 6.8nC @ 10V
278pF @ 15V, 287pF @ 15V
880mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-23-6
FF11MR12W2M1HPB11BPSA1
Infineon Technologies

MOSFET 1200V

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager54
-
1200V (1.2kV)
-
-
-
-
-
-
-
-
-
-
AOE6936
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 55A/85A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc)
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 2mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 25nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 2270pF @ 15V
  • Power - Max: 24W, 39W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-DFN (5x6)
Paket: -
Lager8.757
-
30V
55A (Tc), 85A (Tc)
5mOhm @ 20A, 10V, 2mOhm @ 20A, 10V
2.2V @ 250µA, 2.1V @ 250µA
15nC @ 4.5V, 25nC @ 4.5V
1150pF @ 15V, 2270pF @ 15V
24W, 39W
-55°C ~ 150°C (TJ)
Surface Mount
8-VDFN Exposed Pad
8-DFN (5x6)
DMT3020UFDB-13
Diodes Incorporated

MOSFET 2N-CH 30V 6.5A 6UDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 1.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V
  • Power - Max: 860mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
Paket: -
Request a Quote
-
30V
6.5A (Ta)
21mOhm @ 6A, 10V
1.7V @ 250µA
8.8nC @ 10V
383pF @ 15V
860mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
SH8K39GZETB
Rohm Semiconductor

MOSFET 2N-CH 60V 8A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.7V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V
  • Power - Max: 1.4W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Paket: -
Request a Quote
-
60V
8A (Ta)
21mOhm @ 8A, 10V
2.7V @ 200µA
25nC @ 10V
1240pF @ 30V
1.4W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
RFD14LN05SM
Fairchild Semiconductor

MOSFET N-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
G05NP06S2
Goford Semiconductor

MOSFET N/P-CH 60V 5A/3.1A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc), 3.1A (Tc)
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 4.3A, 10V, 80mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA, 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 37nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1336pF @ 30V, 1454pF @ 30V
  • Power - Max: 2.5W (Tc), 1.9W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Paket: -
Lager22.470
-
60V
5A (Tc), 3.1A (Tc)
36mOhm @ 4.3A, 10V, 80mOhm @ 3.1A, 10V
2V @ 250µA, 2.2V @ 250µA
22nC @ 10V, 37nC @ 10V
1336pF @ 30V, 1454pF @ 30V
2.5W (Tc), 1.9W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
IRF640ACP001
Fairchild Semiconductor

MOSFET N-CH 200V

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
DMN2300UFL4Q-7
Diodes Incorporated

MOSFET 2N-CH 20V 2.11A 6DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.11A (Ta)
  • Rds On (Max) @ Id, Vgs: 195mOhm @ 300mA, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 135.2pF @ 0V
  • Power - Max: 530mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN
  • Supplier Device Package: X2-DFN1310-6
Paket: -
Request a Quote
-
20V
2.11A (Ta)
195mOhm @ 300mA, 4.5V
950mV @ 250µA
3.2nC @ 4.5V
135.2pF @ 0V
530mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-XFDFN
X2-DFN1310-6
HP4936DY
Fairchild Semiconductor

MOSFET 2N-CH 30V 5.8A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
  • Rds On (Max) @ Id, Vgs: 37mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 25V
  • Power - Max: 2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paket: -
Request a Quote
Logic Level Gate
30V
5.8A (Ta)
37mOhm @ 5.8A, 10V
1V @ 250µA
25nC @ 10V
625pF @ 25V
2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC