Page 66 - Transistoren - FETs, MOSFETs - Arrays | Diskrete Halbleiterprodukte

Teilenummer	Hersteller	Beschreibung	Paket	Lager	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
APTM120VDA57T3G	Microsemi Corporation	MOSFET 2N-CH 1200V 17A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 17A Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	Paket: SP3	Lager5.264	Standard	1200V (1.2kV)	17A	684 mOhm @ 8.5A, 10V	5V @ 2.5mA	187nC @ 10V	5155pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
SP8M10FU6TB	Rohm Semiconductor	MOSFET N/P-CH 30V 7A/4.5A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A, 4.5A Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Paket: 8-SOIC (0.154", 3.90mm Width)	Lager7.696	Logic Level Gate	30V	7A, 4.5A	24 mOhm @ 7A, 10V	2.5V @ 1mA	11.8nC @ 5V	600pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
MTM684100LBF	Panasonic Electronic Components	MOSFET 2P-CH 12V 4.8A WMINI8 FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.8A Rds On (Max) @ Id, Vgs: 42 mOhm @ 1A, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V Power - Max: 1W Operating Temperature: -40°C ~ 85°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: WMini8-F1	Paket: 8-SMD, Flat Lead	Lager3.344	Standard	12V	4.8A	42 mOhm @ 1A, 4V	1V @ 1mA	-	1200pF @ 10V	1W	-40°C ~ 85°C (TJ)	Surface Mount	8-SMD, Flat Lead	WMini8-F1
CSD85302L	Texas Instruments	MOSFET 2N-CH 20V 5A FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFLGA Supplier Device Package: 4-Picostar (1.31x1.31)	Paket: 4-XFLGA	Lager3.376	Standard	-	-	-	-	7.8nC @ 4.5V	-	1.7W	-55°C ~ 150°C (TJ)	Surface Mount	4-XFLGA	4-Picostar (1.31x1.31)
NX7002BKS	Nexperia USA Inc.	MOSFET 2N-CH 60V 0.24A 6TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 240mA Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 23.6pF @ 10V Power - Max: 320mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	Paket: 6-TSSOP, SC-88, SOT-363	Lager62.400	Logic Level Gate	60V	240mA	2.8 Ohm @ 200mA, 10V	2.1V @ 250µA	1nC @ 10V	23.6pF @ 10V	320mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
CSD83325LT	Texas Instruments	MOSFET 2N-CH 12V 52A 6PICOSTAR FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFBGA Supplier Device Package: 6-PicoStar	Paket: 6-XFBGA	Lager2.256	Standard	-	-	-	-	10.9nC @ 4.5V	-	2.3W	-55°C ~ 150°C (TJ)	Surface Mount	6-XFBGA	6-PicoStar
SI1023X-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 0.37A SC89-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 370mA Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	Paket: SOT-563, SOT-666	Lager793.812	Logic Level Gate	20V	370mA	1.2 Ohm @ 350mA, 4.5V	450mV @ 250µA (Min)	1.5nC @ 4.5V	-	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
CSD87335Q3DT	Texas Instruments	MOSFET 2N-CH 30V 25A FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V Power - Max: 6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: 8-LSON (3.3x3.3)	Paket: 8-PowerLDFN	Lager15.528	Standard	30V	25A	-	1.9V @ 250µA	7.4nC @ 4.5V	1050pF @ 15V	6W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	8-LSON (3.3x3.3)
APTM50AM38STG	Microsemi Corporation	MOSFET 2N-CH 500V 90A SP4 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 90A Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V Power - Max: 694W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	Paket: SP4	Lager6.080	Standard	500V	90A	45 mOhm @ 45A, 10V	5V @ 5mA	246nC @ 10V	11200pF @ 25V	694W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
SLA5060	Sanken	MOSFET 3N/3P-CH 60V 6A 12-SIP FET Type: 3 N and 3 P-Channel (3-Phase Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 220 mOhm @ 3A, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V Power - Max: 5W Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 12-SIP Supplier Device Package: 12-SIP	Paket: 12-SIP	Lager44.916	Logic Level Gate	60V	6A	220 mOhm @ 3A, 4V	-	-	320pF @ 10V	5W	150°C (TJ)	Through Hole	12-SIP	12-SIP
APTMC120AM55CT1AG	Microsemi Corporation	MOSFET 2N-CH 1200V 55A SP1 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 55A Rds On (Max) @ Id, Vgs: 49 mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.2V @ 2mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 98nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 1000V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	Paket: SP1	Lager7.600	Standard	1200V (1.2kV)	55A	49 mOhm @ 40A, 20V	2.2V @ 2mA (Typ)	98nC @ 20V	1900pF @ 1000V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
IRF7314TRPBF	Infineon Technologies	MOSFET 2P-CH 20V 5.3A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 58 mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Paket: 8-SOIC (0.154", 3.90mm Width)	Lager2.090.124	Logic Level Gate	20V	5.3A	58 mOhm @ 2.9A, 4.5V	700mV @ 250µA	29nC @ 4.5V	780pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ZXMD63N02XTA	Diodes Incorporated	MOSFET 2N-CH 20V 2.5A 8-MSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 130 mOhm @ 1.7A, 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V Power - Max: 1.04W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	Paket: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Lager308.664	Logic Level Gate	20V	2.5A	130 mOhm @ 1.7A, 4.5V	3V @ 250µA	6nC @ 4.5V	700pF @ 15V	1.04W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
CSD85301Q2	Texas Instruments	MOSFET 2N-CH 20V 5A 6WSON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 27 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 469pF @ 10V Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WSON (2x2)	Paket: 6-WDFN Exposed Pad	Lager5.952	Logic Level Gate, 5V Drive	20V	5A	27 mOhm @ 5A, 4.5V	1.2V @ 250µA	5.4nC @ 4.5V	469pF @ 10V	2.3W	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-WSON (2x2)
DMN2004VK-7	Diodes Incorporated	MOSFET 2N-CH 20V 0.54A SOT-563 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Paket: SOT-563, SOT-666	Lager6.250.548	Logic Level Gate	20V	540mA	550 mOhm @ 540mA, 4.5V	1V @ 250µA	-	150pF @ 16V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
NXV10V160ST1	onsemi	3-PHASE AUTOMOTIVE POWER MOSFET FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 101nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 50V Power - Max: - Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: 21-PowerDIP Module (1.370", 34.80mm) Supplier Device Package: APM21-CGA	Paket: -	Request a Quote	-	100V	-	-	4.5V @ 250µA	101nC @ 10V	6970pF @ 50V	-	175°C (TJ)	Through Hole	21-PowerDIP Module (1.370", 34.80mm)	APM21-CGA
NVXR22S90M2SPB	onsemi	SIC 900V 6D MOSFET V-SSDC SPB FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 510A (Tj) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 510A, 18V Vgs(th) (Max) @ Id: 4.3V @ 150mA Gate Charge (Qg) (Max) @ Vgs: 1800nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 35000pF @ 400V Power - Max: 900W (Tj) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SSDC39	Paket: -	Request a Quote	-	900V	510A (Tj)	2.7mOhm @ 510A, 18V	4.3V @ 150mA	1800nC @ 18V	35000pF @ 400V	900W (Tj)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SSDC39
AONR26309A	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 30V 6.5A/14A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 14A (Tc), 5.7A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 10V, 32mOhm @ 5.7A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V, 1100pF @ 15V Power - Max: 1.5W (Ta), 7W (Tc), 1.5W (Ta), 20.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-DFN-EP (3x3)	Paket: -	Request a Quote	-	30V	6.5A (Ta), 14A (Tc), 5.7A (Ta), 21A (Tc)	20mOhm @ 6.5A, 10V, 32mOhm @ 5.7A, 10V	2.3V @ 250µA, 2.2V @ 250µA	20nC @ 10V	600pF @ 15V, 1100pF @ 15V	1.5W (Ta), 7W (Tc), 1.5W (Ta), 20.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-DFN-EP (3x3)
EFC2J004NUZTDG	onsemi	MOSFET NCH 12V WLCSP6 DUAL FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Lager15.000	-	-	-	-	-	-	-	-	-	-	-	-
RF1S17N06L	Harris Corporation	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMT2005UDV-13	Diodes Incorporated	MOSFET 2N-CH 24V 50A POWERDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 10V Power - Max: 900mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type UXC)	Paket: -	Request a Quote	-	24V	50A (Tc)	7mOhm @ 14A, 10V	1.5V @ 250µA	46.7nC @ 10V	2060pF @ 10V	900mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type UXC)
QS6K21FRATR	Rohm Semiconductor	MOSFET 2N-CH 45V 1A TSMT6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 420mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 10V Power - Max: 950mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSMT6 (SC-95)	Paket: -	Lager18.981	-	45V	1A (Ta)	420mOhm @ 1A, 4.5V	1.5V @ 1mA	2.1nC @ 4.5V	95pF @ 10V	950mW (Ta)	150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSMT6 (SC-95)
SH63N65DM6AG	STMicroelectronics	MOSFET 2N-CH 650V 53A 9ACEPACK FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3344pF @ 100V Power - Max: 424W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-PowerSMD Supplier Device Package: 9-ACEPACK SMIT	Paket: -	Lager138	-	650V	53A (Tc)	64mOhm @ 23A, 10V	4.75V @ 250µA	80nC @ 10V	3344pF @ 100V	424W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	9-PowerSMD	9-ACEPACK SMIT
NVMJD4D7N04CLTWG	onsemi	MOSFET N-CH 40V LFPAK56 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMC2053UVTQ-7	Diodes Incorporated	MOSFET N/P-CH 20V 4.6A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.2A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V, 5.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	Paket: -	Lager17.631	-	20V	4.6A (Ta), 3.2A (Ta)	35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V	1V @ 250µA	3.6nC @ 4.5V, 5.9nC @ 4.5V	369pF @ 10V, 440pF @ 10V	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
DMN33D8LDWQ-7	Diodes Incorporated	MOSFET 2N-CH 30V 0.25A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V Power - Max: 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Paket: -	Lager9.000	-	30V	250mA (Ta)	2.4Ohm @ 250mA, 10V	1.5V @ 100µA	1.23nC @ 10V	48pF @ 5V	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
GCMX020A120B3H1P	SemiQ	SIC 1200V 20M MOSFET FULL-BRIDGE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 93A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V Vgs(th) (Max) @ Id: 4V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 800V Power - Max: 300W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Paket: -	Lager30	-	1200V (1.2kV)	93A (Tc)	28mOhm @ 50A, 20V	4V @ 20mA	250nC @ 20V	6700pF @ 800V	300W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
PSMN8R0-40HLX	Nexperia USA Inc.	MOSFET 2N-CH 40V 30A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 5V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V Power - Max: 53W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	Paket: -	Lager4.800	Logic Level Gate	40V	30A (Ta)	9.4mOhm @ 10A, 5V	2.1V @ 1mA	15.7nC @ 5V	2110pF @ 25V	53W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
SSFP3806	Good-Ark Semiconductor	MOSFET 2N-CH 30V 40A 8PPAK FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 25V Power - Max: 46W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-PPAK (5x5.8)	Paket: -	Lager8.988	-	30V	40A (Tc)	6.5mOhm @ 20A, 10V	2.5V @ 250µA	22nC @ 4.5V	1750pF @ 25V	46W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-PPAK (5x5.8)
IRLHS6276TR2PBF	Infineon Technologies	MOSFET 2N-CH 20V 4.5A PQFN FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 45mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V Power - Max: 1.5W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-PowerVDFN Supplier Device Package: 6-PQFN Dual (2x2)	Paket: -	Request a Quote	Logic Level Gate	20V	4.5A	45mOhm @ 3.4A, 4.5V	1.1V @ 10µA	3.1nC @ 4.5V	310pF @ 10V	1.5W	-	Surface Mount	6-PowerVDFN	6-PQFN Dual (2x2)

APTM120VDA57T3G

Microsemi Corporation

MOSFET 2N-CH 1200V 17A SP3

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 17A
Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

Paket: SP3

Lager5.264

Standard

1200V (1.2kV)

17A

684 mOhm @ 8.5A, 10V

5V @ 2.5mA

187nC @ 10V

5155pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

SP8M10FU6TB

Rohm Semiconductor

MOSFET N/P-CH 30V 7A/4.5A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 4.5A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

Paket: 8-SOIC (0.154", 3.90mm Width)

Lager7.696

Logic Level Gate

30V

7A, 4.5A

24 mOhm @ 7A, 10V

2.5V @ 1mA

11.8nC @ 5V

600pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

MTM684100LBF

Panasonic Electronic Components

MOSFET 2P-CH 12V 4.8A WMINI8

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Rds On (Max) @ Id, Vgs: 42 mOhm @ 1A, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Power - Max: 1W
Operating Temperature: -40°C ~ 85°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: WMini8-F1

Paket: 8-SMD, Flat Lead

Lager3.344

Standard

12V

4.8A

42 mOhm @ 1A, 4V

1V @ 1mA

-

1200pF @ 10V

1W

-40°C ~ 85°C (TJ)

Surface Mount

8-SMD, Flat Lead

WMini8-F1

CSD85302L

Texas Instruments

MOSFET 2N-CH 20V 5A

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFLGA
Supplier Device Package: 4-Picostar (1.31x1.31)

Paket: 4-XFLGA

Lager3.376

Standard

-

7.8nC @ 4.5V

-

1.7W

-55°C ~ 150°C (TJ)

Surface Mount

4-XFLGA

4-Picostar (1.31x1.31)

NX7002BKS

Nexperia USA Inc.

MOSFET 2N-CH 60V 0.24A 6TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 240mA
Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 23.6pF @ 10V
Power - Max: 320mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

Paket: 6-TSSOP, SC-88, SOT-363

Lager62.400

Logic Level Gate

60V

240mA

2.8 Ohm @ 200mA, 10V

2.1V @ 250µA

1nC @ 10V

23.6pF @ 10V

320mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

CSD83325LT

Texas Instruments

MOSFET 2N-CH 12V 52A 6PICOSTAR

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA
Supplier Device Package: 6-PicoStar

Paket: 6-XFBGA

Lager2.256

Standard

-

10.9nC @ 4.5V

-

2.3W

-55°C ~ 150°C (TJ)

Surface Mount

6-XFBGA

6-PicoStar

SI1023X-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 0.37A SC89-6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 370mA
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

Paket: SOT-563, SOT-666

Lager793.812

Logic Level Gate

20V

370mA

1.2 Ohm @ 350mA, 4.5V

450mV @ 250µA (Min)

1.5nC @ 4.5V

-

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

CSD87335Q3DT

Texas Instruments

MOSFET 2N-CH 30V 25A

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V
Power - Max: 6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: 8-LSON (3.3x3.3)

Paket: 8-PowerLDFN

Lager15.528

Standard

30V

25A

-

1.9V @ 250µA

7.4nC @ 4.5V

1050pF @ 15V

6W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerLDFN

8-LSON (3.3x3.3)

APTM50AM38STG

Microsemi Corporation

MOSFET 2N-CH 500V 90A SP4

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 90A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
Power - Max: 694W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

Paket: SP4

Lager6.080

Standard

500V

90A

45 mOhm @ 45A, 10V

5V @ 5mA

246nC @ 10V

11200pF @ 25V

694W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

SLA5060

Sanken

MOSFET 3N/3P-CH 60V 6A 12-SIP

FET Type: 3 N and 3 P-Channel (3-Phase Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 220 mOhm @ 3A, 4V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
Power - Max: 5W
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 12-SIP
Supplier Device Package: 12-SIP

Paket: 12-SIP

Lager44.916

Logic Level Gate

60V

6A

220 mOhm @ 3A, 4V

-

320pF @ 10V

5W

150°C (TJ)

Through Hole

12-SIP

APTMC120AM55CT1AG

Microsemi Corporation

MOSFET 2N-CH 1200V 55A SP1

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 55A
Rds On (Max) @ Id, Vgs: 49 mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.2V @ 2mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 1000V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

Paket: SP1

Lager7.600

Standard

1200V (1.2kV)

55A

49 mOhm @ 40A, 20V

2.2V @ 2mA (Typ)

98nC @ 20V

1900pF @ 1000V

250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

IRF7314TRPBF

Infineon Technologies

MOSFET 2P-CH 20V 5.3A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 58 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

Paket: 8-SOIC (0.154", 3.90mm Width)

Lager2.090.124

Logic Level Gate

20V

5.3A

58 mOhm @ 2.9A, 4.5V

700mV @ 250µA

29nC @ 4.5V

780pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

ZXMD63N02XTA

Diodes Incorporated

MOSFET 2N-CH 20V 2.5A 8-MSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 130 mOhm @ 1.7A, 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
Power - Max: 1.04W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

Paket: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Lager308.664

Logic Level Gate

20V

2.5A

130 mOhm @ 1.7A, 4.5V

3V @ 250µA

6nC @ 4.5V

700pF @ 15V

1.04W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

CSD85301Q2

Texas Instruments

MOSFET 2N-CH 20V 5A 6WSON

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 27 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 469pF @ 10V
Power - Max: 2.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WSON (2x2)

Paket: 6-WDFN Exposed Pad

Lager5.952

Logic Level Gate, 5V Drive

20V

5A

27 mOhm @ 5A, 4.5V

1.2V @ 250µA

5.4nC @ 4.5V

469pF @ 10V

2.3W

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-WSON (2x2)

DMN2004VK-7

Diodes Incorporated

MOSFET 2N-CH 20V 0.54A SOT-563

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA
Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

Paket: SOT-563, SOT-666

Lager6.250.548

Logic Level Gate

20V

540mA

550 mOhm @ 540mA, 4.5V

1V @ 250µA

-

150pF @ 16V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

NXV10V160ST1

onsemi

3-PHASE AUTOMOTIVE POWER MOSFET

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 101nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 50V
Power - Max: -
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: 21-PowerDIP Module (1.370", 34.80mm)
Supplier Device Package: APM21-CGA

Paket: -

Request a Quote

-

100V

-

4.5V @ 250µA

101nC @ 10V

6970pF @ 50V

-

175°C (TJ)

Through Hole

21-PowerDIP Module (1.370", 34.80mm)

APM21-CGA

NVXR22S90M2SPB

onsemi

SIC 900V 6D MOSFET V-SSDC SPB

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 510A (Tj)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 510A, 18V
Vgs(th) (Max) @ Id: 4.3V @ 150mA
Gate Charge (Qg) (Max) @ Vgs: 1800nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 35000pF @ 400V
Power - Max: 900W (Tj)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SSDC39

Paket: -

Request a Quote

-

900V

510A (Tj)

2.7mOhm @ 510A, 18V

4.3V @ 150mA

1800nC @ 18V

35000pF @ 400V

900W (Tj)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SSDC39

AONR26309A

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 6.5A/14A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 14A (Tc), 5.7A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 10V, 32mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V, 1100pF @ 15V
Power - Max: 1.5W (Ta), 7W (Tc), 1.5W (Ta), 20.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN-EP (3x3)

Paket: -

Request a Quote

-

30V

6.5A (Ta), 14A (Tc), 5.7A (Ta), 21A (Tc)

20mOhm @ 6.5A, 10V, 32mOhm @ 5.7A, 10V

2.3V @ 250µA, 2.2V @ 250µA

20nC @ 10V

600pF @ 15V, 1100pF @ 15V

1.5W (Ta), 7W (Tc), 1.5W (Ta), 20.8W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-DFN-EP (3x3)

EFC2J004NUZTDG

onsemi

MOSFET NCH 12V WLCSP6 DUAL

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Lager15.000

-

RF1S17N06L

Harris Corporation

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

-

DMT2005UDV-13

Diodes Incorporated

MOSFET 2N-CH 24V 50A POWERDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 46.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 10V
Power - Max: 900mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (Type UXC)

Paket: -

Request a Quote

-

24V

50A (Tc)

7mOhm @ 14A, 10V

1.5V @ 250µA

46.7nC @ 10V

2060pF @ 10V

900mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8 (Type UXC)

QS6K21FRATR

Rohm Semiconductor

MOSFET 2N-CH 45V 1A TSMT6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 420mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 10V
Power - Max: 950mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSMT6 (SC-95)

Paket: -

Lager18.981

-

45V

1A (Ta)

420mOhm @ 1A, 4.5V

1.5V @ 1mA

2.1nC @ 4.5V

95pF @ 10V

950mW (Ta)

150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSMT6 (SC-95)

SH63N65DM6AG

STMicroelectronics

MOSFET 2N-CH 650V 53A 9ACEPACK

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 23A, 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3344pF @ 100V
Power - Max: 424W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-PowerSMD
Supplier Device Package: 9-ACEPACK SMIT

Paket: -

Lager138

-

650V

53A (Tc)

64mOhm @ 23A, 10V

4.75V @ 250µA

80nC @ 10V

3344pF @ 100V

424W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

9-PowerSMD

9-ACEPACK SMIT

NVMJD4D7N04CLTWG

onsemi

MOSFET N-CH 40V LFPAK56

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

-

DMC2053UVTQ-7

Diodes Incorporated

MOSFET N/P-CH 20V 4.6A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V, 5.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V
Power - Max: 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

Paket: -

Lager17.631

-

20V

4.6A (Ta), 3.2A (Ta)

35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V

1V @ 250µA

3.6nC @ 4.5V, 5.9nC @ 4.5V

369pF @ 10V, 440pF @ 10V

700mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

DMN33D8LDWQ-7

Diodes Incorporated

MOSFET 2N-CH 30V 0.25A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V
Power - Max: 350mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

Paket: -

Lager9.000

-

30V

250mA (Ta)

2.4Ohm @ 250mA, 10V

1.5V @ 100µA

1.23nC @ 10V

48pF @ 5V

350mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

GCMX020A120B3H1P

SemiQ

SIC 1200V 20M MOSFET FULL-BRIDGE

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V
Vgs(th) (Max) @ Id: 4V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 800V
Power - Max: 300W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

Paket: -

Lager30

-

1200V (1.2kV)

93A (Tc)

28mOhm @ 50A, 20V

4V @ 20mA

250nC @ 20V

6700pF @ 800V

300W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

PSMN8R0-40HLX

Nexperia USA Inc.

MOSFET 2N-CH 40V 30A LFPAK56D

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V
Power - Max: 53W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

Paket: -

Lager4.800

Logic Level Gate

40V

30A (Ta)

9.4mOhm @ 10A, 5V

2.1V @ 1mA

15.7nC @ 5V

2110pF @ 25V

53W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

SSFP3806

Good-Ark Semiconductor

MOSFET 2N-CH 30V 40A 8PPAK

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 25V
Power - Max: 46W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-PPAK (5x5.8)

Paket: -

Lager8.988

-

30V

40A (Tc)

6.5mOhm @ 20A, 10V

2.5V @ 250µA

22nC @ 4.5V

1750pF @ 25V

46W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-PPAK (5x5.8)

IRLHS6276TR2PBF

Infineon Technologies

MOSFET 2N-CH 20V 4.5A PQFN

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
Power - Max: 1.5W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-PowerVDFN
Supplier Device Package: 6-PQFN Dual (2x2)

Paket: -

Request a Quote

Logic Level Gate

20V

4.5A

45mOhm @ 3.4A, 4.5V

1.1V @ 10µA

3.1nC @ 4.5V

310pF @ 10V

1.5W

-

Surface Mount

6-PowerVDFN

6-PQFN Dual (2x2)