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Transistoren - FETs, MOSFET - HF

Aufzeichnungen 3.855
Page  10/129
Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTF140451E V1
Infineon Technologies

IC FET RF LDMOS 45W H-30265

  • Transistor Type: LDMOS
  • Frequency: 1.5GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 550mA
  • Power - Output: 45W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-30265-2
Paket: 2-Flatpack, Fin Leads
Lager3.408
1.5GHz
18dB
28V
1µA
-
550mA
45W
65V
2-Flatpack, Fin Leads
H-30265-2
BLF8G20LS-400PVQ
NXP

TRANS RF 400W LDMOS CDFM8

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.81GHz ~ 1.88GHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 3.4A
  • Power - Output: 95W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1242B
  • Supplier Device Package: CDFM8
Paket: SOT-1242B
Lager2.896
1.81GHz ~ 1.88GHz
19dB
28V
-
-
3.4A
95W
65V
SOT-1242B
CDFM8
MRFE6VP8600HR6
NXP

FET RF 2CH 130V 860MHZ NI1230H

  • Transistor Type: LDMOS (Dual)
  • Frequency: 860MHz
  • Gain: 19.3dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 125W
  • Voltage - Rated: 130V
  • Package / Case: NI-1230
  • Supplier Device Package: NI-1230
Paket: NI-1230
Lager5.664
860MHz
19.3dB
50V
-
-
1.4A
125W
130V
NI-1230
NI-1230
ON5295,127
NXP

MOSFET RF TO220AB TO220AB

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
Paket: TO-220-3
Lager3.440
-
-
-
-
-
-
-
-
TO-220-3
TO-220AB
MRF7S18125AHSR5
NXP

FET RF 65V 1.88GHZ NI780S

  • Transistor Type: LDMOS
  • Frequency: 1.88GHz
  • Gain: 17dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.1A
  • Power - Output: 125W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
Paket: NI-780S
Lager2.432
1.88GHz
17dB
28V
-
-
1.1A
125W
65V
NI-780S
NI-780S
BLF6G27-75,112
Ampleon USA Inc.

RF FET LDMOS 65V SOT502A

  • Transistor Type: LDMOS
  • Frequency: -
  • Gain: -
  • Voltage - Test: 28V
  • Current Rating: 18A
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 9W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502A
  • Supplier Device Package: LDMOST
Paket: SOT-502A
Lager3.392
-
-
28V
18A
-
600mA
9W
65V
SOT-502A
LDMOST
MRF7S19080HR3
NXP

FET RF 65V 1.99GHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 750mA
  • Power - Output: 24W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
Paket: NI-780
Lager5.200
1.99GHz
18dB
28V
-
-
750mA
24W
65V
NI-780
NI-780
hot MRF18060ALR3
NXP

FET RF 65V 1.88GHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 1.81GHz ~ 1.88GHz
  • Gain: 13dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
Paket: NI-780
Lager20.988
1.81GHz ~ 1.88GHz
13dB
26V
-
-
500mA
60W
65V
NI-780
NI-780
MRF9060LR1
NXP

FET RF 65V 945MHZ NI-360

  • Transistor Type: LDMOS
  • Frequency: 945MHz
  • Gain: 17dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: NI-360
  • Supplier Device Package: NI-360
Paket: NI-360
Lager6.944
945MHz
17dB
26V
-
-
450mA
60W
65V
NI-360
NI-360
MRF6S21050LSR5
NXP

FET RF 68V 2.16GHZ NI-400S

  • Transistor Type: LDMOS
  • Frequency: 2.16GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 11.5W
  • Voltage - Rated: 68V
  • Package / Case: NI-400S
  • Supplier Device Package: NI-400S
Paket: NI-400S
Lager6.144
2.16GHz
16dB
28V
-
-
450mA
11.5W
68V
NI-400S
NI-400S
MRF6S19100NBR1
NXP

FET RF 68V 1.99GHZ TO272-4

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 14.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 950mA
  • Power - Output: 22W
  • Voltage - Rated: 68V
  • Package / Case: TO-272BB
  • Supplier Device Package: TO-272 WB-4
Paket: TO-272BB
Lager7.088
1.99GHz
14.5dB
28V
-
-
950mA
22W
68V
TO-272BB
TO-272 WB-4
MRF5S9150HR5
NXP

FET RF 68V 880MHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 19.7dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.5A
  • Power - Output: 33W
  • Voltage - Rated: 68V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
Paket: NI-780
Lager4.000
880MHz
19.7dB
28V
-
-
1.5A
33W
68V
NI-780
NI-780
hot NE650103M-A
CEL

FET RF 15V 2.3GHZ 3M

  • Transistor Type: MESFET
  • Frequency: 2.3GHz
  • Gain: 11dB
  • Voltage - Test: 10V
  • Current Rating: 5A
  • Noise Figure: -
  • Current - Test: 1.5A
  • Power - Output: 40dBm
  • Voltage - Rated: 15V
  • Package / Case: SOT-445 Variant
  • Supplier Device Package: 3M
Paket: SOT-445 Variant
Lager16.608
2.3GHz
11dB
10V
5A
-
1.5A
40dBm
15V
SOT-445 Variant
3M
BLF246B,112
Ampleon USA Inc.

RF FET 2 NC 65V 19DB SOT161A

  • Transistor Type: 2 N-Channel (Dual) Common Source
  • Frequency: 175MHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: 8A
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: SOT-161A
  • Supplier Device Package: CDFM8
Paket: SOT-161A
Lager2.128
175MHz
19dB
28V
8A
-
50mA
60W
65V
SOT-161A
CDFM8
BLF6G27S-45,135
Ampleon USA Inc.

RF FET LDMOS 65V 18DB SOT608B

  • Transistor Type: LDMOS
  • Frequency: 2.7GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: 20A
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 7W
  • Voltage - Rated: 65V
  • Package / Case: SOT-608B
  • Supplier Device Package: CDFM2
Paket: SOT-608B
Lager2.352
2.7GHz
18dB
28V
20A
-
350mA
7W
65V
SOT-608B
CDFM2
BLF2043F,135
Ampleon USA Inc.

RF FET LDMOS 65V 11DB SOT467C

  • Transistor Type: LDMOS
  • Frequency: 2.2GHz
  • Gain: 11dB
  • Voltage - Test: 26V
  • Current Rating: 2.2A
  • Noise Figure: -
  • Current - Test: 85mA
  • Power - Output: 10W
  • Voltage - Rated: 65V
  • Package / Case: SOT467C
  • Supplier Device Package: SOT467C
Paket: SOT467C
Lager3.552
2.2GHz
11dB
26V
2.2A
-
85mA
10W
65V
SOT467C
SOT467C
BF1102R,135
NXP

FET RF 7V 800MHZ 6TSSOP

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 800MHz
  • Gain: -
  • Voltage - Test: 5V
  • Current Rating: 40mA
  • Noise Figure: 2dB
  • Current - Test: 15mA
  • Power - Output: -
  • Voltage - Rated: 7V
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
Paket: 6-TSSOP, SC-88, SOT-363
Lager6.688
800MHz
-
5V
40mA
2dB
15mA
-
7V
6-TSSOP, SC-88, SOT-363
6-TSSOP
VRF154FL
Microsemi Corporation

MOSFET RF PWR N-CH 50V 600W T2

  • Transistor Type: N-Channel
  • Frequency: 80MHz
  • Gain: 17dB
  • Voltage - Test: 50V
  • Current Rating: 4mA
  • Noise Figure: -
  • Current - Test: 800mA
  • Power - Output: 600W
  • Voltage - Rated: 170V
  • Package / Case: T2
  • Supplier Device Package: T2
Paket: T2
Lager2.448
80MHz
17dB
50V
4mA
-
800mA
600W
170V
T2
T2
BLF6G15LS-250PBRN,
Ampleon USA Inc.

RF FET 65V 18.5DB SOT1110B

  • Transistor Type: -
  • Frequency: 1.47GHz ~ 1.51GHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: 64A
  • Noise Figure: -
  • Current - Test: 1.41A
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1110B
  • Supplier Device Package: LDMOST
Paket: SOT-1110B
Lager2.864
1.47GHz ~ 1.51GHz
18.5dB
28V
64A
-
1.41A
60W
65V
SOT-1110B
LDMOST
BLF6G27LS-40P,118
Ampleon USA Inc.

RF FET LDMOS 65V 17DB SOT1121B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.5GHz ~ 2.7GHz
  • Gain: 17.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 12W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1121B
  • Supplier Device Package: CDFM4
Paket: SOT-1121B
Lager7.632
2.5GHz ~ 2.7GHz
17.5dB
28V
-
-
450mA
12W
65V
SOT-1121B
CDFM4
CGH55015F2
Cree/Wolfspeed

FET RF 84V 5.65GHZ 440166

  • Transistor Type: HEMT
  • Frequency: 5.65GHz
  • Gain: 12dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 12.5W
  • Voltage - Rated: 84V
  • Package / Case: 440166
  • Supplier Device Package: 440166
Paket: 440166
Lager6.444
5.65GHz
12dB
28V
-
-
200mA
12.5W
84V
440166
440166
MRFE6VP6600NR3
NXP

TRANS RF LDMOS 600W 50V

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 24.7dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 600W
  • Voltage - Rated: 133V
  • Package / Case: OM780-4
  • Supplier Device Package: OM780-4
Paket: OM780-4
Lager6.528
230MHz
24.7dB
50V
-
-
100mA
600W
133V
OM780-4
OM780-4
BLC9G20LS-150PVZ
Ampleon USA Inc.

RF FET LDMOS 65V SOT12753

  • Transistor Type: LDMOS
  • Frequency: -
  • Gain: -
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 150W
  • Voltage - Rated: 65V
  • Package / Case: SOT1275-3
  • Supplier Device Package: -
Paket: SOT1275-3
Lager6.352
-
-
28V
-
-
-
150W
65V
SOT1275-3
-
CGHV40100P
Cree/Wolfspeed

FET RF 125V 4GHZ 440206

  • Transistor Type: HEMT
  • Frequency: 0 ~ 4GHz
  • Gain: 11dB
  • Voltage - Test: 50V
  • Current Rating: 8.7A
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 116W
  • Voltage - Rated: 125V
  • Package / Case: 440206
  • Supplier Device Package: 440206
Paket: 440206
Lager6.948
0 ~ 4GHz
11dB
50V
8.7A
-
600mA
116W
125V
440206
440206
0912GN-500LV
Microchip Technology

RF MOSFET HEMT 50V 55-KR

  • Transistor Type: HEMT
  • Frequency: 960MHz ~ 1.215GHz
  • Gain: 16.5dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 550W
  • Voltage - Rated: 150 V
  • Package / Case: 55-KR
  • Supplier Device Package: 55-KR
Paket: -
Request a Quote
960MHz ~ 1.215GHz
16.5dB
50 V
-
-
100 mA
550W
150 V
55-KR
55-KR
CGH31240F
MACOM Technology Solutions

RF MOSFET HEMT 28V 440201

  • Transistor Type: HEMT
  • Frequency: 2.7GHz ~ 3.1GHz
  • Gain: 12dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1 A
  • Power - Output: 250W
  • Voltage - Rated: 120 V
  • Package / Case: 440201
  • Supplier Device Package: 440201
Paket: -
Lager309
2.7GHz ~ 3.1GHz
12dB
28 V
-
-
1 A
250W
120 V
440201
440201
A2T09D400-23NR6
NXP

RF MOSFET LDMOS 28V OM1230-42

  • Transistor Type: LDMOS
  • Frequency: 716MHz ~ 960MHz
  • Gain: 17.8dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.2 A
  • Power - Output: 400W
  • Voltage - Rated: 70 V
  • Package / Case: OM-1230-4L2S
  • Supplier Device Package: OM-1230-4L2S
Paket: -
Request a Quote
716MHz ~ 960MHz
17.8dB
28 V
10µA
-
1.2 A
400W
70 V
OM-1230-4L2S
OM-1230-4L2S
BLC10G18XS-551AVZ
Ampleon USA Inc.

RF MOSFET LDMOS 32V SOT1258-4

  • Transistor Type: LDMOS
  • Frequency: 1.805GHz ~ 1.88GHz
  • Gain: 16.1dB
  • Voltage - Test: 32 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 750 mA
  • Power - Output: 550W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1258-4
  • Supplier Device Package: SOT1258-4
Paket: -
Lager108
1.805GHz ~ 1.88GHz
16.1dB
32 V
2.8µA
-
750 mA
550W
65 V
SOT-1258-4
SOT1258-4
BLP15M9S70Z
Ampleon USA Inc.

RF MOSFET LDMOS 32V SOT1482-1

  • Transistor Type: LDMOS
  • Frequency: 1.5GHz
  • Gain: 17.8dB
  • Voltage - Test: 32 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 300 mA
  • Power - Output: 70W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1482-1
  • Supplier Device Package: SOT-1482-1
Paket: -
Request a Quote
1.5GHz
17.8dB
32 V
2.8µA
-
300 mA
70W
65 V
SOT-1482-1
SOT-1482-1
1214GN-120E
Microchip Technology

RF MOSFET HEMT 50V 55-QQ

  • Transistor Type: HEMT
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 17.16dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 30 mA
  • Power - Output: 130W
  • Voltage - Rated: 125 V
  • Package / Case: 55-QQ
  • Supplier Device Package: 55-QQ
Paket: -
Request a Quote
1.2GHz ~ 1.4GHz
17.16dB
50 V
-
-
30 mA
130W
125 V
55-QQ
55-QQ