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Transistoren - FETs, MOSFET - HF

Aufzeichnungen 3.855
Page  103/138
Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA043002E V1
Infineon Technologies

IC FET RF LDMOS 300W H-30275-4

  • Transistor Type: LDMOS
  • Frequency: 800MHz
  • Gain: 16dB
  • Voltage - Test: 32V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.55A
  • Power - Output: 100W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-30275-4
Paket: 2-Flatpack, Fin Leads
Lager6.192
800MHz
16dB
32V
10µA
-
1.55A
100W
65V
2-Flatpack, Fin Leads
H-30275-4
BLF7G15LS-200,118
Ampleon USA Inc.

RF FET LDMOS 65V 19.5DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 1.47GHz ~ 1.51GHz
  • Gain: 19.5dB
  • Voltage - Test: 28V
  • Current Rating: 56A
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
Paket: SOT-502B
Lager6.688
1.47GHz ~ 1.51GHz
19.5dB
28V
56A
-
1.6A
50W
65V
SOT-502B
SOT502B
hot MRFE6S9205HR3
NXP

FET RF 66V 880MHZ NI-880

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 21.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 58W
  • Voltage - Rated: 66V
  • Package / Case: NI-880
  • Supplier Device Package: NI-880
Paket: NI-880
Lager6.784
880MHz
21.2dB
28V
-
-
1.4A
58W
66V
NI-880
NI-880
hot MRF7S27130HR3
NXP

FET RF 65V 2.7GHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 2.7GHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.5A
  • Power - Output: 23W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
Paket: NI-780
Lager9.900
2.7GHz
16.5dB
28V
-
-
1.5A
23W
65V
NI-780
NI-780
MRF7S21080HR3
NXP

FET RF 65V 2.17GHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 800mA
  • Power - Output: 22W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
Paket: NI-780
Lager4.720
2.17GHz
18dB
28V
-
-
800mA
22W
65V
NI-780
NI-780
MRF9060NBR1
NXP

FET RF 65V 945MHZ TO272-2

  • Transistor Type: LDMOS
  • Frequency: 945MHz
  • Gain: 18dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: TO-272-2
  • Supplier Device Package: TO-272-2
Paket: TO-272-2
Lager7.984
945MHz
18dB
26V
-
-
450mA
60W
65V
TO-272-2
TO-272-2
BLF147,112
Ampleon USA Inc.

RF FET NCHA 65V 14DB SOT121B

  • Transistor Type: N-Channel
  • Frequency: 108MHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: 25A
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 150W
  • Voltage - Rated: 65V
  • Package / Case: SOT-121B
  • Supplier Device Package: CRFM4
Paket: SOT-121B
Lager6.720
108MHz
14dB
28V
25A
-
1A
150W
65V
SOT-121B
CRFM4
BLA1011-10,112
Ampleon USA Inc.

RF FET LDMOS 75V 15DB SOT467C

  • Transistor Type: LDMOS
  • Frequency: 1.03GHz ~ 1.09GHz
  • Gain: 15dB
  • Voltage - Test: 36V
  • Current Rating: 2.2A
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 10W
  • Voltage - Rated: 75V
  • Package / Case: SOT467C
  • Supplier Device Package: SOT467C
Paket: SOT467C
Lager3.536
1.03GHz ~ 1.09GHz
15dB
36V
2.2A
-
50mA
10W
75V
SOT467C
SOT467C
MRF6V12500HSR5
NXP

FET RF 110V 1.03GHZ NI-1230H

  • Transistor Type: LDMOS
  • Frequency: 1.03GHz
  • Gain: 19.7dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 500W
  • Voltage - Rated: 110V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
Paket: NI-780S
Lager5.056
1.03GHz
19.7dB
50V
-
-
200mA
500W
110V
NI-780S
NI-780S
VRF3933MP
Microsemi Corporation

MOSFET RF N-CH 250V 20A M177

  • Transistor Type: N-Channel
  • Frequency: 30MHz
  • Gain: 28dB
  • Voltage - Test: 100V
  • Current Rating: 20A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 350W
  • Voltage - Rated: 250V
  • Package / Case: M177
  • Supplier Device Package: M177
Paket: M177
Lager2.928
30MHz
28dB
100V
20A
-
250mA
350W
250V
M177
M177
AFT09S282NR3
NXP

FET RF 70V 960MHZ OM-780-2

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 20dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 80W
  • Voltage - Rated: 70V
  • Package / Case: OM-780-2
  • Supplier Device Package: OM-780-2
Paket: OM-780-2
Lager5.952
960MHz
20dB
28V
-
-
1.4A
80W
70V
OM-780-2
OM-780-2
AFT26P100-4WSR3
NXP

FET RF 2CH 65V 2.69GHZ NI780S-6

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.69GHz
  • Gain: 15.1dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 22W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S-4
  • Supplier Device Package: NI-780S-4
Paket: NI-780S-4
Lager4.880
2.69GHz
15.1dB
28V
-
-
200mA
22W
65V
NI-780S-4
NI-780S-4
A2I25H060NR1
NXP

IC RF LDMOS AMP

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.59GHz
  • Gain: 26.1dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 26mA
  • Power - Output: 10.5W
  • Voltage - Rated: 65V
  • Package / Case: TO-270-17 Variant, Flat Leads
  • Supplier Device Package: TO-270WB-17
Paket: TO-270-17 Variant, Flat Leads
Lager7.424
2.59GHz
26.1dB
28V
-
-
26mA
10.5W
65V
TO-270-17 Variant, Flat Leads
TO-270WB-17
BLF7G24LS-100,112
Ampleon USA Inc.

RF FET LDMOS 65V 18DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: 28A
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 20W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
Paket: SOT-502B
Lager5.936
2.3GHz ~ 2.4GHz
18dB
28V
28A
-
900mA
20W
65V
SOT-502B
SOT502B
CGHV96100F2
Cree/Wolfspeed

FET RF 100V 9.6GHZ 440210

  • Transistor Type: HEMT
  • Frequency: 7.9GHz ~ 9.6GHz
  • Gain: 10.2dB
  • Voltage - Test: 40V
  • Current Rating: 12A
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 131W
  • Voltage - Rated: 100V
  • Package / Case: 440210
  • Supplier Device Package: 440210
Paket: 440210
Lager5.312
7.9GHz ~ 9.6GHz
10.2dB
40V
12A
-
1A
131W
100V
440210
440210
A2I25D025NR1
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.69GHz
  • Gain: 31.9dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 59mA
  • Power - Output: 3.2W
  • Voltage - Rated: 65V
  • Package / Case: TO-270-17 Variant, Flat Leads
  • Supplier Device Package: TO-270WB-17
Paket: TO-270-17 Variant, Flat Leads
Lager3.168
2.69GHz
31.9dB
28V
-
-
59mA
3.2W
65V
TO-270-17 Variant, Flat Leads
TO-270WB-17
BF512,215
NXP

JFET N-CH 20V 30MA SOT23

  • Transistor Type: N-Channel JFET
  • Frequency: 100MHz
  • Gain: -
  • Voltage - Test: 10V
  • Current Rating: 30mA
  • Noise Figure: 1.5dB
  • Current - Test: 5mA
  • Power - Output: -
  • Voltage - Rated: 20V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
Paket: TO-236-3, SC-59, SOT-23-3
Lager7.472
100MHz
-
10V
30mA
1.5dB
5mA
-
20V
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
BLF183XRSU
Ampleon USA Inc.

RF FET LDMOS 135V 28DB SOT1121B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 108MHz
  • Gain: 28dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 350W
  • Voltage - Rated: 135V
  • Package / Case: SOT-1121B
  • Supplier Device Package: CDFM4
Paket: SOT-1121B
Lager7.520
108MHz
28dB
50V
-
-
100mA
350W
135V
SOT-1121B
CDFM4
BPS9G2933X-450Z
Ampleon USA Inc.

RF MOSFET LDMOS 32V MODULE

  • Transistor Type: LDMOS
  • Frequency: 2.9GHz ~ 3.3GHz
  • Gain: 12dB
  • Voltage - Test: 32 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 400 mA
  • Power - Output: 450W
  • Voltage - Rated: 65 V
  • Package / Case: Module
  • Supplier Device Package: Module
Paket: -
Request a Quote
2.9GHz ~ 3.3GHz
12dB
32 V
-
-
400 mA
450W
65 V
Module
Module
CG2H40010F
MACOM Technology Solutions

RF MOSFET HEMT 28V 440166

  • Transistor Type: HEMT
  • Frequency: 8GHz
  • Gain: 16.5dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: -
  • Voltage - Rated: 120 V
  • Package / Case: 440166
  • Supplier Device Package: 440166
Paket: -
Request a Quote
8GHz
16.5dB
28 V
-
-
100 mA
-
120 V
440166
440166
BLC10G22XS-603AVTY
Ampleon USA Inc.

RF MOSFET LDMOS 30V SOT1258-4

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 15.4dB
  • Voltage - Test: 30 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 1.2 A
  • Power - Output: 600W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1258-4
  • Supplier Device Package: SOT1258-4
Paket: -
Lager300
2.11GHz ~ 2.17GHz
15.4dB
30 V
2.8µA
-
1.2 A
600W
65 V
SOT-1258-4
SOT1258-4
PTFB182503EL-V1-R250
MACOM Technology Solutions

RF MOSFET LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
BLC10G22XS-570AVTY
Ampleon USA Inc.

RF MOSFET LDMOS 30V SOT1258-4

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.11GHz ~ 2.18GHz
  • Gain: 15.7dB
  • Voltage - Test: 30 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 1.15 A
  • Power - Output: 570W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1258-4
  • Supplier Device Package: SOT1258-4
Paket: -
Request a Quote
2.11GHz ~ 2.18GHz
15.7dB
30 V
2.8µA
-
1.15 A
570W
65 V
SOT-1258-4
SOT1258-4
BLF8G10L-160V-118
NXP

RF MOSFET LDMOS SOT502A

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
MMBF5485_NB50012
onsemi

RF MOSFET JFET 15V SOT23-3

  • Transistor Type: JFET
  • Frequency: 400MHz
  • Gain: -
  • Voltage - Test: 15 V
  • Current Rating: 10mA
  • Noise Figure: 4dB
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 25 V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
Paket: -
Request a Quote
400MHz
-
15 V
10mA
4dB
-
-
25 V
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BLC9H10XS-500AZ
Ampleon USA Inc.

RF MOSFET LDMOS 48V SOT1273-1

  • Transistor Type: LDMOS
  • Frequency: 617MHz ~ 960MHz
  • Gain: 18.9dB
  • Voltage - Test: 48 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 500 mA
  • Power - Output: 500W
  • Voltage - Rated: 105 V
  • Package / Case: SOT-1273-1
  • Supplier Device Package: SOT1273-1
Paket: -
Lager42
617MHz ~ 960MHz
18.9dB
48 V
1.4µA
-
500 mA
500W
105 V
SOT-1273-1
SOT1273-1
WS1A3940-V1-R1
MACOM Technology Solutions

RF MOSFET GAN 48V 20LGA

  • Transistor Type: GaN
  • Frequency: 3.7GHz ~ 3.98GHz
  • Gain: 11.7dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 45 mA
  • Power - Output: 10W
  • Voltage - Rated: 125 V
  • Package / Case: 20-TFLGA Exposed Pad
  • Supplier Device Package: 20-LGA (6x6)
Paket: -
Request a Quote
3.7GHz ~ 3.98GHz
11.7dB
48 V
-
-
45 mA
10W
125 V
20-TFLGA Exposed Pad
20-LGA (6x6)
1011GN-1200V
Microchip Technology

RF MOSFET HEMT 50V 55-Q03

  • Transistor Type: HEMT
  • Frequency: 1.03GHz ~ 1.09GHz
  • Gain: 20dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150 mA
  • Power - Output: 1200W
  • Voltage - Rated: 150 V
  • Package / Case: 55-Q03
  • Supplier Device Package: 55-Q03
Paket: -
Request a Quote
1.03GHz ~ 1.09GHz
20dB
50 V
-
-
150 mA
1200W
150 V
55-Q03
55-Q03