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Transistoren - FETs, MOSFET - Einzeln

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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
BSP324L6327HTSA1
Infineon Technologies

MOSFET N-CH 400V 170MA SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 94µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 154pF @ 25V
  • Vgs (Max): ��20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 25 Ohm @ 170mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4
  • Package / Case: TO-261-4, TO-261AA
Paket: TO-261-4, TO-261AA
Auf Lager254
MOSFET (Metal Oxide)
400V
170mA (Ta)
4.5V, 10V
2.3V @ 94µA
5.9nC @ 10V
154pF @ 25V
��20V
-
1.8W (Ta)
25 Ohm @ 170mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
BSS214NL6327HTSA1
Infineon Technologies

MOSFET N-CH 20V 1.5A SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
  • Vgs (Max): ��12V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: TO-236-3, SC-59, SOT-23-3
Auf Lager265
MOSFET (Metal Oxide)
20V
1.5A (Ta)
2.5V, 4.5V
1.2V @ 3.7µA
0.8nC @ 5V
143pF @ 10V
��12V
-
500mW (Ta)
140 mOhm @ 1.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23-3
TO-236-3, SC-59, SOT-23-3
GP1M011A050H
Global Power Technologies Group

MOSFET N-CH 500V 11A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1423pF @ 25V
  • Vgs (Max): ��30V
  • FET Feature: -
  • Power Dissipation (Max): 158W (Tc)
  • Rds On (Max) @ Id, Vgs: 670 mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
Paket: TO-220-3
Auf Lager371
MOSFET (Metal Oxide)
500V
11A (Tc)
10V
4V @ 250µA
28nC @ 10V
1423pF @ 25V
��30V
-
158W (Tc)
670 mOhm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
2SK4099LS
ON Semiconductor

MOSFET N-CH 600V 8.5A TO-220FI

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 30V
  • Vgs (Max): ��30V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 940 mOhm @ 4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FI(LS)
  • Package / Case: TO-220-3 Full Pack
Paket: TO-220-3 Full Pack
Auf Lager498
MOSFET (Metal Oxide)
600V
6.9A (Tc)
10V
5V @ 1mA
29nC @ 10V
750pF @ 30V
��30V
-
2W (Ta), 35W (Tc)
940 mOhm @ 4A, 10V
150°C (TJ)
Through Hole
TO-220FI(LS)
TO-220-3 Full Pack
2N7002ET3G
ON Semiconductor

MOSFET N-CH 60V 260MA SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.81nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 26.7pF @ 25V
  • Vgs (Max): ��20V
  • FET Feature: -
  • Power Dissipation (Max): 300mW (Tj)
  • Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 240mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: TO-236-3, SC-59, SOT-23-3
Auf Lager232
MOSFET (Metal Oxide)
60V
260mA (Ta)
4.5V, 10V
2.5V @ 250µA
0.81nC @ 5V
26.7pF @ 25V
��20V
-
300mW (Tj)
2.5 Ohm @ 240mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
hotFDU8580
Fairchild/ON Semiconductor

MOSFET N-CH 20V 35A I-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1445pF @ 10V
  • Vgs (Max): ��20V
  • FET Feature: -
  • Power Dissipation (Max): 49.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251AA
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Paket: TO-251-3 Short Leads, IPak, TO-251AA
Auf Lager20.122
MOSFET (Metal Oxide)
20V
35A (Tc)
4.5V, 10V
2.5V @ 250µA
27nC @ 10V
1445pF @ 10V
��20V
-
49.5W (Tc)
9 mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-251AA
TO-251-3 Short Leads, IPak, TO-251AA
PHP71NQ03LT,127
NXP

MOSFET N-CH 30V 75A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 25V
  • Vgs (Max): ��20V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paket: TO-220-3
Auf Lager439
MOSFET (Metal Oxide)
30V
75A (Tc)
5V, 10V
2.5V @ 1mA
13.2nC @ 5V
1220pF @ 25V
��20V
-
120W (Tc)
10 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hotZXM64P035L3
Diodes Incorporated

MOSFET P-CH 35V 12A TO-220-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 35V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 25V
  • Vgs (Max): ��20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 75 mOhm @ 2.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
Paket: TO-220-3
Auf Lager15.140
MOSFET (Metal Oxide)
35V
3.3A (Ta), 12A (Tc)
4.5V, 10V
1V @ 250µA
46nC @ 10V
825pF @ 25V
��20V
-
1.5W (Ta), 20W (Tc)
75 mOhm @ 2.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
hotAUIRF7478QTR
Infineon Technologies

MOSFET N-CH 60V 7A 8SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V
  • Vgs (Max): ��20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 26 mOhm @ 4.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paket: 8-SOIC (0.154", 3.90mm Width)
Auf Lager8.000
MOSFET (Metal Oxide)
60V
7A (Ta)
4.5V, 10V
3V @ 250µA
31nC @ 4.5V
1740pF @ 25V
��20V
-
2.5W (Ta)
26 mOhm @ 4.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IPS090N03LGAKMA1
Infineon Technologies

MOSFET N-CH 30V 40A TO251-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V
  • Vgs (Max): ��20V
  • FET Feature: -
  • Power Dissipation (Max): 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO251-3
  • Package / Case: TO-251-3 Stub Leads, IPak
Paket: TO-251-3 Stub Leads, IPak
Auf Lager207
MOSFET (Metal Oxide)
30V
40A (Tc)
4.5V, 10V
2.2V @ 250µA
15nC @ 10V
1600pF @ 15V
��20V
-
42W (Tc)
9 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO251-3
TO-251-3 Stub Leads, IPak
APT12057B2FLLG
Microsemi Corporation

MOSFET N-CH 1200V 22A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
  • Vgs (Max): ��30V
  • FET Feature: -
  • Power Dissipation (Max): 690W (Tc)
  • Rds On (Max) @ Id, Vgs: 570 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX? [B2]
  • Package / Case: TO-247-3 Variant
Paket: TO-247-3 Variant
Auf Lager261
MOSFET (Metal Oxide)
1200V
22A (Tc)
10V
5V @ 2.5mA
185nC @ 10V
5155pF @ 25V
��30V
-
690W (Tc)
570 mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Through Hole
T-MAX? [B2]
TO-247-3 Variant
SIHW47N60EF-GE3
Vishay Siliconix

MOSFET N-CH 600V 47A TO-247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4854pF @ 100V
  • Vgs (Max): ��30V
  • FET Feature: -
  • Power Dissipation (Max): 379W (Tc)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 24A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD
  • Package / Case: TO-247-3
Paket: TO-247-3
Auf Lager240
MOSFET (Metal Oxide)
600V
47A (Tc)
10V
4V @ 250µA
225nC @ 10V
4854pF @ 100V
��30V
-
379W (Tc)
65 mOhm @ 24A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
SI7455DP-T1-GE3
Vishay Siliconix

MOSFET P-CH 80V 28A PPAK SO-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5160pF @ 40V
  • Vgs (Max): ��20V
  • FET Feature: -
  • Power Dissipation (Max): 5.2W (Ta), 83.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 10.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
Paket: PowerPAK? SO-8
Auf Lager161
MOSFET (Metal Oxide)
80V
28A (Tc)
6V, 10V
4V @ 250µA
155nC @ 10V
5160pF @ 40V
��20V
-
5.2W (Ta), 83.3W (Tc)
25 mOhm @ 10.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
TJ30S06M3L(T6L1,NQ
Toshiba Semiconductor and Storage

MOSFET P-CH 60V 30A DPAK-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 10V
  • Vgs (Max): +10V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 21.8 mOhm @ 15A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Auf Lager106
MOSFET (Metal Oxide)
60V
30A (Ta)
6V, 10V
3V @ 1mA
80nC @ 10V
3950pF @ 10V
+10V, -20V
-
68W (Tc)
21.8 mOhm @ 15A, 10V
175°C (TJ)
Surface Mount
DPAK+
TO-252-3, DPak (2 Leads + Tab), SC-63
SFT1341-C-TL-W
ON Semiconductor

MOSFET P-CH 40V 10A TP

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK/TP-FA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Auf Lager261
-
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
DPAK/TP-FA
TO-252-3, DPak (2 Leads + Tab), SC-63
DMN6022SSD-13
Diodes Incorporated

MOSFET BVDSS: 41V 60V SO-8

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paket: -
Auf Lager458
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TSM190N08CZ C0G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, TRENC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 30V
  • Vgs (Max): ��20V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
Paket: TO-220-3
Auf Lager421
MOSFET (Metal Oxide)
75V
190A (Tc)
10V
4V @ 250µA
160nC @ 10V
8600pF @ 30V
��20V
-
250W (Tc)
4.2 mOhm @ 90A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
IRFR7546TRPBF
Infineon Technologies

MOSFET N-CH 60V 71A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 25V
  • Vgs (Max): ��20V
  • FET Feature: -
  • Power Dissipation (Max): 99W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 43A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Auf Lager469
MOSFET (Metal Oxide)
60V
56A (Tc)
6V, 10V
3.7V @ 100µA
87nC @ 10V
3020pF @ 25V
��20V
-
99W (Tc)
7.9 mOhm @ 43A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
STB10N95K5
STMicroelectronics

MOSFET N-CH 950V 8A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 950V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 100V
  • Vgs (Max): ��30V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 800 mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Auf Lager233
MOSFET (Metal Oxide)
950V
8A (Tc)
10V
5V @ 100µA
22nC @ 10V
630pF @ 100V
��30V
-
130W (Tc)
800 mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STP10LN80K5
STMicroelectronics

MOSFET N-CH 800V 8A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 427pF @ 100V
  • Vgs (Max): ��30V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 630 mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
Paket: TO-220-3
Auf Lager1.554
MOSFET (Metal Oxide)
800V
8A (Tc)
10V
5V @ 100µA
15nC @ 10V
427pF @ 100V
��30V
-
110W (Tc)
630 mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
hotIRFI634GPBF
Vishay Siliconix

MOSFET N-CH 250V 5.6A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V
  • Vgs (Max): ��20V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 3.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
Paket: TO-220-3 Full Pack, Isolated Tab
Auf Lager1.284
MOSFET (Metal Oxide)
250V
5.6A (Tc)
10V
4V @ 250µA
41nC @ 10V
770pF @ 25V
��20V
-
35W (Tc)
450 mOhm @ 3.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
hotIRLIZ34NPBF
Infineon Technologies

MOSFET N-CH 55V 22A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
  • Vgs (Max): ��16V
  • FET Feature: -
  • Power Dissipation (Max): 37W (Tc)
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB Full-Pak
  • Package / Case: TO-220-3 Full Pack
Paket: TO-220-3 Full Pack
Auf Lager8.042
MOSFET (Metal Oxide)
55V
22A (Tc)
4V, 10V
2V @ 250µA
25nC @ 5V
880pF @ 25V
��16V
-
37W (Tc)
35 mOhm @ 12A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB Full-Pak
TO-220-3 Full Pack
PMXB43UNE
Nexperia USA Inc.

MOSFET N-CH 20V 3.2A 3DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 551pF @ 10V
  • Vgs (Max): ��8V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
  • Rds On (Max) @ Id, Vgs: 54 mOhm @ 3.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN1010D-3
  • Package / Case: 3-XDFN Exposed Pad
Paket: 3-XDFN Exposed Pad
Auf Lager100
MOSFET (Metal Oxide)
20V
3.2A (Ta)
1.5V, 4.5V
900mV @ 250µA
10nC @ 4.5V
551pF @ 10V
��8V
-
400mW (Ta), 8.33W (Tc)
54 mOhm @ 3.2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
DFN1010D-3
3-XDFN Exposed Pad
hotSI5404BDC-T1-E3
Vishay Siliconix

MOSFET N-CH 20V 5.4A 1206-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ��12V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 5.4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 1206-8 ChipFET?
  • Package / Case: 8-SMD, Flat Lead
Paket: 8-SMD, Flat Lead
Auf Lager29.418
MOSFET (Metal Oxide)
20V
5.4A (Ta)
2.5V, 4.5V
1.5V @ 250µA
11nC @ 4.5V
-
��12V
-
1.3W (Ta)
28 mOhm @ 5.4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
1206-8 ChipFET?
8-SMD, Flat Lead
hotSTP14NK50Z
STMicroelectronics

MOSFET N-CH 500V 14A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
  • Vgs (Max): ��30V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paket: TO-220-3
Auf Lager2.862
MOSFET (Metal Oxide)
500V
14A (Tc)
10V
4.5V @ 100µA
92nC @ 10V
2000pF @ 25V
��30V
-
150W (Tc)
380 mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
SIHA12N50E-E3
Vishay Siliconix

MOSFET N-CH 500V 10.5A TO-220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 886pF @ 100V
  • Vgs (Max): ��30V
  • FET Feature: -
  • Power Dissipation (Max): 32W (Tc)
  • Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Full Pack
  • Package / Case: TO-220-3 Full Pack
Paket: TO-220-3 Full Pack
Auf Lager2.216
MOSFET (Metal Oxide)
500V
10.5A (Tc)
10V
4V @ 250µA
50nC @ 10V
886pF @ 100V
��30V
-
32W (Tc)
380 mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220 Full Pack
TO-220-3 Full Pack
BSP316PH6327XTSA1
Infineon Technologies

MOSFET P-CH 100V 0.68A SOT223

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 170µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 25V
  • Vgs (Max): ��20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 680mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4
  • Package / Case: TO-261-4, TO-261AA
Paket: TO-261-4, TO-261AA
Auf Lager7.140
MOSFET (Metal Oxide)
100V
680mA (Ta)
4.5V, 10V
2V @ 170µA
6.4nC @ 10V
146pF @ 25V
��20V
-
1.8W (Ta)
1.8 Ohm @ 680mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
hotDMP2215L-7
Diodes Incorporated

MOSFET P-CH 20V 2.7A SOT23-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
  • Vgs (Max): ��12V
  • FET Feature: -
  • Power Dissipation (Max): 1.08W (Ta)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: TO-236-3, SC-59, SOT-23-3
Auf Lager59.288
MOSFET (Metal Oxide)
20V
2.7A (Ta)
2.5V, 4.5V
1.25V @ 250µA
5.3nC @ 4.5V
250pF @ 10V
��12V
-
1.08W (Ta)
100 mOhm @ 2.7A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
hot2N7002PW,115
Nexperia USA Inc.

MOSFET N-CH 60V 0.31A SOT323

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
  • Vgs (Max): ��20V
  • FET Feature: -
  • Power Dissipation (Max): 260mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323-3
  • Package / Case: SC-70, SOT-323
Paket: SC-70, SOT-323
Auf Lager57.000
MOSFET (Metal Oxide)
60V
310mA (Ta)
10V
2.4V @ 250µA
0.8nC @ 4.5V
50pF @ 10V
��20V
-
260mW (Ta)
1.6 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323-3
SC-70, SOT-323
hotSTB12NM50ND
STMicroelectronics

MOSFET N-CH 500V 11A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 50V
  • Vgs (Max): ��25V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Auf Lager3.840
MOSFET (Metal Oxide)
500V
11A (Tc)
10V
5V @ 250µA
30nC @ 10V
850pF @ 50V
��25V
-
100W (Tc)
380 mOhm @ 5.5A, 10V
150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB