Transistoren - IGBTs - Einzeln

IRG7PG42UDPBF

Infineon Technologies

IGBT 1000V 85A 320W TO247AC

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 1000V
• Current - Collector (Ic) (Max): 85A
• Current - Collector Pulsed (Icm): 90A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
• Power - Max: 320W
• Switching Energy: 2.11mJ (on), 1.18mJ (off)
• Input Type: Standard
• Gate Charge: 157nC
• Td (on/off) @ 25°C: 25ns/229ns
• Test Condition: 600V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 153ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

Paket: TO-247-3

IRGP4062-EPBF

Infineon Technologies

IGBT 600V 48A 250W TO-247AD

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 48A
• Current - Collector Pulsed (Icm): 72A
• Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
• Power - Max: 250W
• Switching Energy: 115µJ (on), 600µJ (off)
• Input Type: Standard
• Gate Charge: 75nC
• Td (on/off) @ 25°C: 41ns/104ns
• Test Condition: 400V, 24A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

Paket: TO-247-3

IKW03N120H2FKSA1

Infineon Technologies

IGBT 1200V 9.6A 62.5W TO247-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 9.6A
• Current - Collector Pulsed (Icm): 9.9A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
• Power - Max: 62.5W
• Switching Energy: 290µJ
• Input Type: Standard
• Gate Charge: 22nC
• Td (on/off) @ 25°C: 9.2ns/281ns
• Test Condition: 800V, 3A, 82 Ohm, 15V
• Reverse Recovery Time (trr): 42ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

Paket: TO-247-3

IRGBC40U

Infineon Technologies

IGBT UFAST 600V 40A TO-220AB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
• Power - Max: 160W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

Paket: TO-220-3

IXSH25N120AU1

IXYS

IGBT 1200V 50A 200W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 50A
• Current - Collector Pulsed (Icm): 80A
• Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
• Power - Max: 200W
• Switching Energy: 9.6mJ (off)
• Input Type: Standard
• Gate Charge: 120nC
• Td (on/off) @ 25°C: 100ns/450ns
• Test Condition: 960V, 25A, 18 Ohm, 15V
• Reverse Recovery Time (trr): 60ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXSH)

Paket: TO-247-3

IXGT39N60BD1

IXYS

IGBT 600V 76A 200W TO268

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 76A
• Current - Collector Pulsed (Icm): 152A
• Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 39A
• Power - Max: 200W
• Switching Energy: 4mJ (off)
• Input Type: Standard
• Gate Charge: 110nC
• Td (on/off) @ 25°C: 25ns/250ns
• Test Condition: 480V, 39A, 4.7 Ohm, 15V
• Reverse Recovery Time (trr): 25ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

Paket: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXGR32N60C

IXYS

IGBT 600V 45A 140W ISOPLUS247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 45A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 32A
• Power - Max: 140W
• Switching Energy: 320µJ (off)
• Input Type: Standard
• Gate Charge: 110nC
• Td (on/off) @ 25°C: 25ns/85ns
• Test Condition: 480V, 32A, 4.7 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247?
• Supplier Device Package: ISOPLUS247?

Paket: ISOPLUS247?

IXST24N60BD1

IXYS

IGBT 600V 48A 150W TO268

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 48A
• Current - Collector Pulsed (Icm): 96A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
• Power - Max: 150W
• Switching Energy: 1.3mJ (off)
• Input Type: Standard
• Gate Charge: 41nC
• Td (on/off) @ 25°C: 50ns/150ns
• Test Condition: 480V, 24A, 33 Ohm, 15V
• Reverse Recovery Time (trr): 25ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

Paket: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

ISL9V3040D3S

Fairchild/ON Semiconductor

IGBT 430V 21A 150W TO252AA

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 430V
• Current - Collector (Ic) (Max): 21A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
• Power - Max: 150W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: 17nC
• Td (on/off) @ 25°C: -/4.8µs
• Test Condition: 300V, 1 kOhm, 5V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

IKB20N60TATMA1

Infineon Technologies

IGBT 600V 40A 166W TO263-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
• Power - Max: 166W
• Switching Energy: 770µJ
• Input Type: Standard
• Gate Charge: 120nC
• Td (on/off) @ 25°C: 18ns/199ns
• Test Condition: 400V, 20A, 12 Ohm, 15V
• Reverse Recovery Time (trr): 41ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO-263

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXGH20N100

IXYS

IGBT 1000V 40A 150W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1000V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 80A
• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
• Power - Max: 150W
• Switching Energy: 3.5mJ (off)
• Input Type: Standard
• Gate Charge: 73nC
• Td (on/off) @ 25°C: 30ns/350ns
• Test Condition: 800V, 20A, 47 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

Paket: TO-247-3

NGB8202ANTF4G

Littelfuse Inc.

IGBT 440V 20A 150W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 440V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 50A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A
• Power - Max: 150W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: -
• Td (on/off) @ 25°C: -/5µs
• Test Condition: 300V, 9A, 1 kOhm, 5V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D2PAK-3

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

FGH40N60SFDTU

Fairchild/ON Semiconductor

IGBT 600V 80A 290W TO247

• IGBT Type: Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
• Power - Max: 290W
• Switching Energy: 1.13mJ (on), 310µJ (off)
• Input Type: Standard
• Gate Charge: 120nC
• Td (on/off) @ 25°C: 25ns/115ns
• Test Condition: 400V, 40A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 45ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

Paket: TO-247-3

APT15GP90BDQ1G

Microsemi Corporation

IGBT 900V 43A 250W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 900V
• Current - Collector (Ic) (Max): 43A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 15A
• Power - Max: 250W
• Switching Energy: 200µJ (off)
• Input Type: Standard
• Gate Charge: 60nC
• Td (on/off) @ 25°C: 9ns/33ns
• Test Condition: 600V, 15A, 4.3 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 [B]

Paket: TO-247-3

STGW15S120DF3

STMicroelectronics

IGBT 1200V 15A TO247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
• Power - Max: 259W
• Switching Energy: 540µJ (on), 1.38mJ (off)
• Input Type: Standard
• Gate Charge: 53nC
• Td (on/off) @ 25°C: 23ns/140ns
• Test Condition: 600V, 15A, 22 Ohm, 15V
• Reverse Recovery Time (trr): 270ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

Paket: TO-247-3

AOTF5B65M1

Alpha & Omega Semiconductor Inc.

IGBT 650V 5A TO220

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 10A
• Current - Collector Pulsed (Icm): 15A
• Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A
• Power - Max: 25W
• Switching Energy: 80µJ (on), 70µJ (off)
• Input Type: Standard
• Gate Charge: 14nC
• Td (on/off) @ 25°C: 8.5ns/106ns
• Test Condition: 400V, 5A, 60 Ohm, 15V
• Reverse Recovery Time (trr): 195ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220

Paket: TO-220-3

STGWA35HF60WDI

STMicroelectronics

IGBT 600V 70A 260W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 70A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
• Power - Max: 260W
• Switching Energy: 185µJ (off)
• Input Type: Standard
• Gate Charge: 140nC
• Td (on/off) @ 25°C: 30ns/175ns
• Test Condition: 390V, 20A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 85ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

Paket: TO-247-3

IGW40N60TPXKSA1

Infineon Technologies

IGBT 600V 67A 246W TO247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 67A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
• Power - Max: 246W
• Switching Energy: 1.06mJ (on), 610µJ (off)
• Input Type: Standard
• Gate Charge: 177nC
• Td (on/off) @ 25°C: 18ns/222ns
• Test Condition: 400V, 40A, 10.1 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

Paket: TO-247-3

IRGB5B120KDPBF

Infineon Technologies

IGBT 1200V 12A 89W TO220AB

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 12A
• Current - Collector Pulsed (Icm): 24A
• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 6A
• Power - Max: 89W
• Switching Energy: 390µJ (on), 330µJ (off)
• Input Type: Standard
• Gate Charge: 25nC
• Td (on/off) @ 25°C: 22ns/100ns
• Test Condition: 600V, 6A, 50 Ohm, 15V
• Reverse Recovery Time (trr): 160ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

Paket: TO-220-3

IRG4IBC10UDPBF

Infineon Technologies

IGBT 600V 6.8A 25W TO220FP

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 6.8A
• Current - Collector Pulsed (Icm): 27A
• Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
• Power - Max: 25W
• Switching Energy: 140µJ (on), 120µJ (off)
• Input Type: Standard
• Gate Charge: 15nC
• Td (on/off) @ 25°C: 40ns/87ns
• Test Condition: 480V, 5A, 100 Ohm, 15V
• Reverse Recovery Time (trr): 28ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220AB Full-Pak

Paket: TO-220-3 Full Pack

IRGP4266DPBF

Infineon Technologies

IGBT 650V 140A 455W TO247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 140A
• Current - Collector Pulsed (Icm): 300A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
• Power - Max: 455W
• Switching Energy: 2.5mJ (on), 2.2mJ (off)
• Input Type: Standard
• Gate Charge: 210nC
• Td (on/off) @ 25°C: 50ns/200ns
• Test Condition: 400V, 75A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 170ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

Paket: TO-247-3

GT50JR21-STA1-E-S

Toshiba Semiconductor and Storage

PB-F IGBT / TRANSISTOR TO-3PN(OS

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 50 A
• Current - Collector Pulsed (Icm): 100 A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
• Power - Max: 230 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P(N)

Paket: -

STGB25N40LZAG

STMicroelectronics

IGBT 435V 25A TO263

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 435 V
• Current - Collector (Ic) (Max): 25 A
• Current - Collector Pulsed (Icm): 50 A
• Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
• Power - Max: 150 W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: 26 nC
• Td (on/off) @ 25°C: 1.1µs/4.6µs
• Test Condition: 300V, 10A, 1kOhm, 5V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (D2PAK)

Paket: -

IGC06T60TEX7SA2

Infineon Technologies

IGBT 600V 6A WAFER

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paket: -

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IGW50N60TFKSA1

Infineon Technologies

IGBT TRENCH FS 600V 100A TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 100 A
• Current - Collector Pulsed (Icm): 150 A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
• Power - Max: 333 W
• Switching Energy: 2.6mJ
• Input Type: Standard
• Gate Charge: 310 nC
• Td (on/off) @ 25°C: 26ns/299ns
• Test Condition: 400V, 50A, 7Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3-1

Paket: -

AFGHL50T65RQDN

onsemi

IGBT FIELD STOP 650V 78A TO247-3

• IGBT Type: Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 78 A
• Current - Collector Pulsed (Icm): 200 A
• Vce(on) (Max) @ Vge, Ic: 1.81V @ 50A, 15V
• Power - Max: 346 W
• Switching Energy: 3.09mJ (on), 830µJ (off)
• Input Type: Standard
• Gate Charge: 65 nC
• Td (on/off) @ 25°C: 41ns/76ns
• Test Condition: 400V, 50A, 2.5Ohm, 15V
• Reverse Recovery Time (trr): 57 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

Paket: -

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MGP14N60E

onsemi

IGBT, 18A, 600V, N-CHANNEL

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paket: -

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IXYH55N120B4H1

IXYS

IGBT TRENCH 1200V 138A TO247

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 138 A
• Current - Collector Pulsed (Icm): 310 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A
• Power - Max: 650 W
• Switching Energy: 3.4mJ (on), 2.75mJ (off)
• Input Type: Standard
• Gate Charge: 120 nC
• Td (on/off) @ 25°C: 27ns/215ns
• Test Condition: 600V, 40A, 5Ohm, 15V
• Reverse Recovery Time (trr): 420 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXTH)

Paket: -

Request a Quote