Transistoren - IGBTs - Einzeln

IRGB4059DPBF

Infineon Technologies

IGBT 600V 8A 56W TO220AB

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 8A
• Current - Collector Pulsed (Icm): 16A
• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
• Power - Max: 56W
• Switching Energy: 35µJ (on), 75µJ (off)
• Input Type: Standard
• Gate Charge: 9nC
• Td (on/off) @ 25°C: 25ns/65ns
• Test Condition: 400V, 4A, 100 Ohm, 15V
• Reverse Recovery Time (trr): 55ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

Paket: TO-220-3

IRG4BAC50W-SPBF

Infineon Technologies

IGBT 600V 55A 200W SUPER220

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 55A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 27A
• Power - Max: 200W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: Super-220?-3 (Straight Leads)
• Supplier Device Package: SUPER-220? (TO-273AA)

Paket: Super-220?-3 (Straight Leads)

IXGR40N60C2

IXYS

IGBT 600V 56A 170W ISOPLUS247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 56A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
• Power - Max: 170W
• Switching Energy: 200µJ (off)
• Input Type: Standard
• Gate Charge: 95nC
• Td (on/off) @ 25°C: 18ns/90ns
• Test Condition: 400V, 30A, 3 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247?
• Supplier Device Package: ISOPLUS247?

Paket: ISOPLUS247?

IRG4BC30KDSTRRP

Infineon Technologies

IGBT 600V 28A 100W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 28A
• Current - Collector Pulsed (Icm): 56A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
• Power - Max: 100W
• Switching Energy: 600µJ (on), 580µJ (off)
• Input Type: Standard
• Gate Charge: 67nC
• Td (on/off) @ 25°C: 60ns/160ns
• Test Condition: 480V, 16A, 23 Ohm, 15V
• Reverse Recovery Time (trr): 42ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

APT25GR120BSCD10

Microsemi Corporation

IGBT 1200V 75A 521W TO247

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 100A
• Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
• Power - Max: 521W
• Switching Energy: 434µJ (on), 466µJ (off)
• Input Type: Standard
• Gate Charge: 203nC
• Td (on/off) @ 25°C: 16ns/122ns
• Test Condition: 600V, 25A, 4.3 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

Paket: TO-247-3

IXXH30N60B3D1

IXYS

IGBT 600V 60A 270W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 115A
• Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A
• Power - Max: 270W
• Switching Energy: 550µJ (on), 500µJ (off)
• Input Type: Standard
• Gate Charge: 39nC
• Td (on/off) @ 25°C: 23ns/97ns
• Test Condition: 400V, 24A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 25ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXXH)

Paket: TO-247-3

RJP65T54DPM-A0#T2

Renesas Electronics America

IGBT TRENCH 650V 60A TO-3PFP

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.68V @ 15V, 30A
• Power - Max: 63.5W
• Switching Energy: 330µJ (on), 760µJ (off)
• Input Type: Standard
• Gate Charge: 72nC
• Td (on/off) @ 25°C: 35ns/120ns
• Test Condition: 400V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: SC-94
• Supplier Device Package: TO-3PFP

Paket: SC-94

IXGH24N120IH

IXYS

IGBT 1200V TO-247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

Paket: TO-247-3

GPA030A120I-FD

Global Power Technologies Group

IGBT 1200V 60A 329W TO247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 90A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
• Power - Max: 329W
• Switching Energy: 4.5mJ (on), 850µJ (off)
• Input Type: Standard
• Gate Charge: 330nC
• Td (on/off) @ 25°C: 40ns/245ns
• Test Condition: 600V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 450ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

Paket: TO-247-3

NGTD23T120F2WP

ON Semiconductor

IGBT TRENCH FIELD STOP 1200V DIE

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

Paket: Die

STGF20NB60S

STMicroelectronics

IGBT 600V 24A 40W TO220FP

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 24A
• Current - Collector Pulsed (Icm): 70A
• Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
• Power - Max: 40W
• Switching Energy: 840µJ (on), 7.4mJ (off)
• Input Type: Standard
• Gate Charge: 83nC
• Td (on/off) @ 25°C: 92ns/1.1µs
• Test Condition: 480V, 20A, 100 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220FP

Paket: TO-220-3 Full Pack

IXGR72N60B3H1

IXYS

IGBT 600V 75A 200W ISOPLUS247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 450A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
• Power - Max: 200W
• Switching Energy: 1.4mJ (on), 1mJ (off)
• Input Type: Standard
• Gate Charge: 225nC
• Td (on/off) @ 25°C: 31ns/152ns
• Test Condition: 480V, 50A, 3 Ohm, 15V
• Reverse Recovery Time (trr): 140ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247?
• Supplier Device Package: ISOPLUS247?

Paket: ISOPLUS247?

IXYX30N170CV1

IXYS

1700V/108A HIGH VOLTAGE XPT IGB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1700V
• Current - Collector (Ic) (Max): 108A
• Current - Collector Pulsed (Icm): 255A
• Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 30A
• Power - Max: 937W
• Switching Energy: 5.9mJ (on), 3.3mJ (off)
• Input Type: Standard
• Gate Charge: 140nC
• Td (on/off) @ 25°C: 28ns/150ns
• Test Condition: 850V, 30A, 2.7 Ohm, 15V
• Reverse Recovery Time (trr): 160ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PLUS247?-3

Paket: TO-247-3

IXBT20N300

IXYS

IGBT 3000V 50A 250W TO268

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 3000V
• Current - Collector (Ic) (Max): 50A
• Current - Collector Pulsed (Icm): 140A
• Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
• Power - Max: 250W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 105nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): 1.35µs
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

Paket: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

AOK20B135E1

Alpha & Omega Semiconductor Inc.

IGBT 1350V 20A 340W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1350V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 80A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 20A
• Power - Max: 250W
• Switching Energy: 800µJ (off)
• Input Type: Standard
• Gate Charge: 58nC
• Td (on/off) @ 25°C: -/134ns
• Test Condition: 600V, 20A, 15 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

Paket: TO-247-3

STGWT60H65DFB

STMicroelectronics

IGBT 650V 80A 375W TO3P-3L

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 240A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
• Power - Max: 375W
• Switching Energy: 1.09mJ (on), 626µJ (off)
• Input Type: Standard
• Gate Charge: 306nC
• Td (on/off) @ 25°C: 51ns/160ns
• Test Condition: 400V, 60A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 60ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P

Paket: TO-3P-3, SC-65-3

STGFW40V60F

STMicroelectronics

IGBT 600V 80A 62.5W TO-3PF

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 160A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
• Power - Max: 62.5W
• Switching Energy: 456µJ (on), 411µJ (off)
• Input Type: Standard
• Gate Charge: 226nC
• Td (on/off) @ 25°C: 52ns/208ns
• Test Condition: 400V, 40A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: TO-3PF

Paket: TO-3P-3 Full Pack

IRGP4066PBF

Infineon Technologies

IGBT 600V 140A 454W TO247AC

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 140A
• Current - Collector Pulsed (Icm): 225A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
• Power - Max: 454W
• Switching Energy: 2.47mJ (on), 2.16mJ (off)
• Input Type: Standard
• Gate Charge: 150nC
• Td (on/off) @ 25°C: 50ns/200ns
• Test Condition: 400V, 75A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

Paket: TO-247-3

AOB30B65LN2V

Alpha & Omega Semiconductor Inc.

LINEAR IC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 60 A
• Current - Collector Pulsed (Icm): 90 A
• Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
• Power - Max: 227 W
• Switching Energy: 880µJ (on), 350µJ (off)
• Input Type: Standard
• Gate Charge: 52 nC
• Td (on/off) @ 25°C: 23ns/109ns
• Test Condition: 400V, 30A, 10Ohm, 15V
• Reverse Recovery Time (trr): 312 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (D2PAK)

Paket: -

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AFGHL40T120RHD

onsemi

1200V/40A FSII IGBT TO247 AUTOMO

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 48 A
• Current - Collector Pulsed (Icm): 160 A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
• Power - Max: 400 W
• Switching Energy: 3.7mJ (on), 1.2mJ (off)
• Input Type: Standard
• Gate Charge: 277 nC
• Td (on/off) @ 25°C: 37ns/150ns
• Test Condition: 600V, 40A, 5Ohm, 15V
• Reverse Recovery Time (trr): 195 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

Paket: -

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AIMDQ75R060M1HXUMA1

Infineon Technologies

AUTOMOTIVE_SICMOS

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paket: -

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IGC99T120T8RQX7SA1

Infineon Technologies

IGBT 1200V 100A DIE

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): 300 A
• Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 100A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paket: -

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RGTH50TK65GC11

Rohm Semiconductor

IGBT TRNCH FIELD 650V 26A TO3PFM

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 26 A
• Current - Collector Pulsed (Icm): 100 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
• Power - Max: 59 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 49 nC
• Td (on/off) @ 25°C: 27ns/94ns
• Test Condition: 400V, 25A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3PFM, SC-93-3
• Supplier Device Package: TO-3PFM

Paket: -

SIGC156T60NR2CX1SA4

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 200 A
• Current - Collector Pulsed (Icm): 600 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 180ns/285ns
• Test Condition: 300V, 200A, 1.5Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

Paket: -

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FGHL75T65LQDTL4

onsemi

FS4 LOW VCESAT IGBT 650V 75A TO2

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 300 A
• Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
• Power - Max: 469 W
• Switching Energy: 1.01mJ (on), 2.53mJ (off)
• Input Type: Standard
• Gate Charge: 779 nC
• Td (on/off) @ 25°C: 40ns/548ns
• Test Condition: 400V, 75A, 4.7Ohm, 15V
• Reverse Recovery Time (trr): 87 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-4
• Supplier Device Package: TO-247-4L

Paket: -

FGD3040G2-F085D

onsemi

FGD3040G2-F085D

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252 (DPAK)

Paket: -

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AFGHL75T65SQ

onsemi

IGBT WITH SIC COPACK DIODE IGBT

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 300 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
• Power - Max: 375 W
• Switching Energy: 1.86mJ (on), 1.13mJ (off)
• Input Type: Standard
• Gate Charge: 139 nC
• Td (on/off) @ 25°C: 25ns/106ns
• Test Condition: 400V, 75A, 4.7Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

Paket: -

STGD25N36LZAG

STMicroelectronics

DISCRETE

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 350 V
• Current - Collector (Ic) (Max): 25 A
• Current - Collector Pulsed (Icm): 50 A
• Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
• Power - Max: 150 W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: 25.7 nC
• Td (on/off) @ 25°C: 1.1µs/7.4µs
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252 (DPAK)

Paket: -

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