Transistoren - IGBTs - Einzeln

IRGP4078DPBF

Infineon Technologies

IGBT 600V 74A 278W TO247AC

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 74A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
• Power - Max: 278W
• Switching Energy: 1.1mJ (off)
• Input Type: Standard
• Gate Charge: 92nC
• Td (on/off) @ 25°C: -/116ns
• Test Condition: 400V, 50A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

Paket: TO-247-3

SKP10N60AXKSA1

Infineon Technologies

IGBT 600V 20A 92W TO220-3

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 40A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A
• Power - Max: 92W
• Switching Energy: 320µJ
• Input Type: Standard
• Gate Charge: 52nC
• Td (on/off) @ 25°C: 28ns/178ns
• Test Condition: 400V, 10A, 25 Ohm, 15V
• Reverse Recovery Time (trr): 220ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: PG-TO220-3

Paket: TO-220-3

RJH60D1DPP-E0#T2

Renesas Electronics America

IGBT 600V 10A

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
• Power - Max: 30W
• Switching Energy: 100µJ (on), 130µJ (off)
• Input Type: Standard
• Gate Charge: 13nC
• Td (on/off) @ 25°C: 30ns/42ns
• Test Condition: 300V, 10A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 70ns
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220FP

Paket: TO-220-3 Full Pack

APT50GP60LDLG

Microsemi Corporation

IGBT 600V 150A 625W TO264

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 150A
• Current - Collector Pulsed (Icm): 190A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
• Power - Max: 625W
• Switching Energy: 456µJ (on), 635µJ (off)
• Input Type: Standard
• Gate Charge: 165nC
• Td (on/off) @ 25°C: 19ns/85ns
• Test Condition: 400V, 50A, 4.3 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: TO-264

Paket: TO-264-3, TO-264AA

IXGQ50N60B4D1

IXYS

IGBT 600V 100A 300W TO3P

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 100A
• Current - Collector Pulsed (Icm): 230A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
• Power - Max: 300W
• Switching Energy: 930µJ (on), 1mJ (off)
• Input Type: Standard
• Gate Charge: 110nC
• Td (on/off) @ 25°C: 37ns/330ns
• Test Condition: 400V, 36A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 25ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P

Paket: TO-3P-3, SC-65-3

IXGP24N60C4

IXYS

IGBT 600V 56A 190W TO220

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 56A
• Current - Collector Pulsed (Icm): 130A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
• Power - Max: 190W
• Switching Energy: 400µJ (on), 300µJ (off)
• Input Type: Standard
• Gate Charge: 64nC
• Td (on/off) @ 25°C: 21ns/143ns
• Test Condition: 360V, 24A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

Paket: TO-220-3

IXGH40N60B

IXYS

IGBT 600V 75A 250W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
• Power - Max: 250W
• Switching Energy: 2.7mJ (off)
• Input Type: Standard
• Gate Charge: 116nC
• Td (on/off) @ 25°C: 25ns/180ns
• Test Condition: 480V, 40A, 4.7 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

Paket: TO-247-3

STGF12NB60KD

STMicroelectronics

IGBT 600V 14A 30W TO220FP

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 14A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 12A
• Power - Max: 30W
• Switching Energy: 152µJ (on), 258µJ (off)
• Input Type: Standard
• Gate Charge: 54nC
• Td (on/off) @ 25°C: 25ns/96ns
• Test Condition: 480V, 12A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 37ns
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220FP

Paket: TO-220-3 Full Pack

IXSH30N60BD1

IXYS

IGBT 600V 55A 200W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 55A
• Current - Collector Pulsed (Icm): 110A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 55A
• Power - Max: 200W
• Switching Energy: 1.5mJ (off)
• Input Type: Standard
• Gate Charge: 100nC
• Td (on/off) @ 25°C: 30ns/150ns
• Test Condition: 480V, 30A, 4.7 Ohm, 15V
• Reverse Recovery Time (trr): 50ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXSH)

Paket: TO-247-3

IXEH25N120

IXYS

IGBT 1200V 36A 200W TO247AD

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 36A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
• Power - Max: 200W
• Switching Energy: 4.1mJ (on), 1.5mJ (off)
• Input Type: Standard
• Gate Charge: 100nC
• Td (on/off) @ 25°C: -
• Test Condition: 600V, 20A, 68 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: TO-247AD

Paket: TO-3P-3 Full Pack

IRGS6B60KTRLPBF

Infineon Technologies

IGBT 600V 13A 90W D2PAK

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 13A
• Current - Collector Pulsed (Icm): 26A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
• Power - Max: 90W
• Switching Energy: 110µJ (on), 135µJ (off)
• Input Type: Standard
• Gate Charge: 18.2nC
• Td (on/off) @ 25°C: 25ns/215ns
• Test Condition: 400V, 5A, 100 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXBT42N300HV

IXYS

IGBT 3000V 42A 357W TO268

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 3000V
• Current - Collector (Ic) (Max): 104A
• Current - Collector Pulsed (Icm): 400A
• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 42A
• Power - Max: 500W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 200nC
• Td (on/off) @ 25°C: 72ns/445ns
• Test Condition: 1500V, 42A, 20 Ohm, 15V
• Reverse Recovery Time (trr): 1.7µs
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

Paket: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

NGTB40N60FLWG

ON Semiconductor

IGBT 600V 80A 257W TO247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 160A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
• Power - Max: 257W
• Switching Energy: 890µJ (on), 440µJ (off)
• Input Type: Standard
• Gate Charge: 171nC
• Td (on/off) @ 25°C: 85ns/174ns
• Test Condition: 400V, 40A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 77ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

Paket: TO-247-3

NGTB30N135IHRWG

ON Semiconductor

IGBT 1350V 60A 394W TO247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1350V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 30A
• Power - Max: 394W
• Switching Energy: 850µJ (off)
• Input Type: Standard
• Gate Charge: 234nC
• Td (on/off) @ 25°C: -/250ns
• Test Condition: 600V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

Paket: TO-247-3

AOK20B60D1

Alpha & Omega Semiconductor Inc.

IGBT 600V 40A 180W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 74A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
• Power - Max: 167W
• Switching Energy: 760µJ (on), 180µJ (off)
• Input Type: Standard
• Gate Charge: 24.6nC
• Td (on/off) @ 25°C: 20ns/66ns
• Test Condition: 400V, 20A, 15 Ohm, 15V
• Reverse Recovery Time (trr): 107ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

Paket: TO-247-3

APT40GR120S

Microsemi Corporation

IGBT 1200V 88A 500W D3PAK

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 88A
• Current - Collector Pulsed (Icm): 160A
• Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A
• Power - Max: 500W
• Switching Energy: 1.38mJ (on), 906µJ (off)
• Input Type: Standard
• Gate Charge: 210nC
• Td (on/off) @ 25°C: 22ns/163ns
• Test Condition: 600V, 40A, 4.3 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D3Pak

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IKW40N65ES5XKSA1

Infineon Technologies

IGBT 650V 74A 255W PG-TO247-3

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 79A
• Current - Collector Pulsed (Icm): 160A
• Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A
• Power - Max: 230W
• Switching Energy: 860µJ (on), 400µJ (off)
• Input Type: Standard
• Gate Charge: 95nC
• Td (on/off) @ 25°C: 19ns/130ns
• Test Condition: 400V, 40A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 73ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

Paket: TO-247-3

STGF7NB60SL

STMicroelectronics

IGBT 600V 15A 25W TO220FP

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 15A
• Current - Collector Pulsed (Icm): 20A
• Vce(on) (Max) @ Vge, Ic: 1.6V @ 4.5V, 7A
• Power - Max: 25W
• Switching Energy: 4.1mJ (off)
• Input Type: Standard
• Gate Charge: 16nC
• Td (on/off) @ 25°C: 1.1µs/5.2µs
• Test Condition: 480V, 7A, 1 kOhm, 5V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220FP

Paket: TO-220-3 Full Pack

IXBL60N360

IXYS

IGBT 3600V 92A ISOPLUS I5PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 3600V
• Current - Collector (Ic) (Max): 92A
• Current - Collector Pulsed (Icm): 720A
• Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 60A
• Power - Max: 417W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 450nC
• Td (on/off) @ 25°C: 50ns/340ns
• Test Condition: 960V, 60A, 4.7 Ohm, 15V
• Reverse Recovery Time (trr): 1.95µs
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: ISOPLUSi5-Pak?
• Supplier Device Package: ISOPLUSi5-Pak?

Paket: ISOPLUSi5-Pak?

FGY160T65SPD-F085

onsemi

650V FS GEN3 TRENCH IGBT

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 240 A
• Current - Collector Pulsed (Icm): 480 A
• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 160A
• Power - Max: 882 W
• Switching Energy: 12.4mJ (on), 5.7mJ (off)
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 53ns/98ns
• Test Condition: 400V, 160A, 15V
• Reverse Recovery Time (trr): 132 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

Paket: -

LGB8204ATH

IXYS

D2PAK, IGBT3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 430 V
• Current - Collector (Ic) (Max): 18 A
• Current - Collector Pulsed (Icm): 50 A
• Vce(on) (Max) @ Vge, Ic: 2V @ 4.5V, 10A
• Power - Max: 115 W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

Paket: -

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AIGB30N65H5ATMA1

Infineon Technologies

DISCRETE SWITCHES

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 30 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO263-3-2

Paket: -

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RBN75H65T1FPQ-A0-CB0

Renesas Electronics Corporation

IGBT TRENCH 650V 150A TO247A

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 150 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
• Power - Max: 312 W
• Switching Energy: 1.6mJ (on), 1mJ (off)
• Input Type: Standard
• Gate Charge: 54 nC
• Td (on/off) @ 25°C: 29ns/113ns
• Test Condition: 400V, 75A, 16Ohm, 15V
• Reverse Recovery Time (trr): 72 ns
• Operating Temperature: 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247A

Paket: -

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PCFF15H60W

onsemi

IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paket: -

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IRGC35B60PB

Infineon Technologies

IGBT CHIP

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 10A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

Paket: -

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FGF65A4H

Sanken Electric USA Inc.

FIELD STOP IGBT WITH FRD 650V/40

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 65 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 2.37V @ 15V, 40A
• Power - Max: 72 W
• Switching Energy: 700µJ (on), 600µJ (off)
• Input Type: Standard
• Gate Charge: 75 nC
• Td (on/off) @ 25°C: 40ns/100ns
• Test Condition: 400V, 40A, 10Ohm, 15V
• Reverse Recovery Time (trr): 50 ns
• Operating Temperature: 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: TO-3PF

Paket: -

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SIGC42T60NCX1SA5

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 50 A
• Current - Collector Pulsed (Icm): 150 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 43ns/130ns
• Test Condition: 300V, 50A, 3.3Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

Paket: -

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MIW40N120FLA-BP

Micro Commercial Co

IGBT 1200V 40A,TO-247AB

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 160 A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
• Power - Max: 428 W
• Switching Energy: 3.8mJ (on), 1.7mJ (off)
• Input Type: Standard
• Gate Charge: 330 nC
• Td (on/off) @ 25°C: 45ns/180ns
• Test Condition: 600V, 40A, 12Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AB

Paket: -