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Transistoren - JFETs

Aufzeichnungen 635
Page  1/22
Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Voltage - Breakdown (V(BR)GSS)
Drain to Source Voltage (Vdss)
Current - Drain (Idss) @ Vds (Vgs=0)
Current Drain (Id) - Max
Voltage - Cutoff (VGS off) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Resistance - RDS(On)
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IJW120R100T1FKSA1
Infineon Technologies

JFET N-CHAN 26A TO247-3

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Drain (Idss) @ Vds (Vgs=0): 1.5µA @ 1200V
  • Current Drain (Id) - Max: 26A
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 19.5V (VGS)
  • Resistance - RDS(On): 100 mOhm
  • Power - Max: 190W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
Paket: TO-247-3
Lager3.424
-
1200V
1.5µA @ 1200V
26A
-
1550pF @ 19.5V (VGS)
100 mOhm
190W
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IJW120R070T1FKSA1
Infineon Technologies

JFET N-CHAN 35A TO247-3

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Drain (Idss) @ Vds (Vgs=0): 3.3µA @ 1200V
  • Current Drain (Id) - Max: 35A
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 19.5V (VGS)
  • Resistance - RDS(On): 70 mOhm
  • Power - Max: 238W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
Paket: TO-247-3
Lager6.912
-
1200V
3.3µA @ 1200V
35A
-
2000pF @ 19.5V (VGS)
70 mOhm
238W
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
hot SST4416-T1-E3
Vishay Siliconix

JFET N-CH 36V 5MA SOT-23

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 3V @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: 2.2pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
Paket: TO-236-3, SC-59, SOT-23-3
Lager108.000
30V
-
5mA @ 15V
-
3V @ 1nA
2.2pF @ 15V
-
350mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
hot SST201-T1-E3
Vishay Siliconix

JFET N-CH 25V .7MA SOT-23

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
Paket: TO-236-3, SC-59, SOT-23-3
Lager64.680
40V
-
200µA @ 15V
-
300mV @ 10nA
4.5pF @ 15V
-
350mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
2SK2394-7-FRD-TB-E
ON Semiconductor

JFET N-CH SC-59-3

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager3.216
-
-
-
-
-
-
-
-
-
-
-
-
J203-18
Central Semiconductor Corp

JFET N-CH TO-92

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager5.936
-
-
-
-
-
-
-
-
-
-
-
-
hot J175
Central Semiconductor Corp

JFET P-CHAN 30V TO92

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 7mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 3V @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: 5.5pF @ 10V (VGS)
  • Resistance - RDS(On): 125 Ohm
  • Power - Max: 350mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager11.148
30V
-
7mA @ 15V
-
3V @ 10nA
5.5pF @ 10V (VGS)
125 Ohm
350mW
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92
hot J112
Central Semiconductor Corp

JFET N-CHAN 35V TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 35V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 5V @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V (VGS)
  • Resistance - RDS(On): 50 Ohm
  • Power - Max: 350mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
Paket: TO-226-3, TO-92-3 (TO-226AA)
Lager128.244
35V
-
5mA @ 15V
-
5V @ 1µA
5pF @ 10V (VGS)
50 Ohm
350mW
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
hot J110
Central Semiconductor Corp

JFET N-CH TO-92

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
Paket: TO-226-3, TO-92-3 (TO-226AA)
Lager12.780
-
-
-
-
-
-
-
-
-
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
2N6660JAN02
Vishay Siliconix

MOSFET JFET N-CH

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager5.904
-
-
-
-
-
-
-
-
-
-
-
-
2N4858JVP02
Vishay Siliconix

MOSFET JFET P-CH

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager3.408
-
-
-
-
-
-
-
-
-
-
-
-
2N4858JTVP02
Vishay Siliconix

MOSFET JFET P-CH

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager5.072
-
-
-
-
-
-
-
-
-
-
-
-
MX2N5116
Microsemi Corporation

N CHANNEL JFET

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): 30V
  • Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 4V @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
  • Resistance - RDS(On): 175 Ohm
  • Power - Max: 500mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
Paket: TO-206AA, TO-18-3 Metal Can
Lager7.392
30V
30V
25mA @ 15V
-
4V @ 1nA
27pF @ 15V
175 Ohm
500mW
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18
MX2N5114
Microsemi Corporation

N CHANNEL JFET

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): 30V
  • Current - Drain (Idss) @ Vds (Vgs=0): 90mA @ 18V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 10V @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
  • Resistance - RDS(On): 75 Ohm
  • Power - Max: 500mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
Paket: TO-206AA, TO-18-3 Metal Can
Lager7.648
30V
30V
90mA @ 18V
-
10V @ 1nA
25pF @ 15V
75 Ohm
500mW
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)
MX2N4861
Microsemi Corporation

N CHANNEL JFET

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): 30V
  • Current - Drain (Idss) @ Vds (Vgs=0): 80mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 4V @ 0.5nA
  • Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
  • Resistance - RDS(On): 60 Ohm
  • Power - Max: 360mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
Paket: TO-206AA, TO-18-3 Metal Can
Lager2.112
30V
30V
80mA @ 15V
-
4V @ 0.5nA
18pF @ 10V
60 Ohm
360mW
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)
MX2N4860UB
Microsemi Corporation

N CHANNEL JFET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager7.056
-
-
-
-
-
-
-
-
-
-
-
-
MX2N4860
Microsemi Corporation

N CHANNEL JFET

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): 30V
  • Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 6V @ 500pA
  • Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
  • Resistance - RDS(On): 40 Ohm
  • Power - Max: 360mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
Paket: TO-206AA, TO-18-3 Metal Can
Lager4.672
30V
30V
100mA @ 15V
-
6V @ 500pA
18pF @ 10V
40 Ohm
360mW
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)
MX2N4859
Microsemi Corporation

N CHANNEL JFET

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): 30V
  • Current - Drain (Idss) @ Vds (Vgs=0): 175mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 10V @ 500pA
  • Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
  • Resistance - RDS(On): 25 Ohm
  • Power - Max: 360mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
Paket: TO-206AA, TO-18-3 Metal Can
Lager4.736
30V
30V
175mA @ 15V
-
10V @ 500pA
18pF @ 10V
25 Ohm
360mW
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)
MX2N4858UB
Microsemi Corporation

N CHANNEL JFET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager7.952
-
-
-
-
-
-
-
-
-
-
-
-
MX2N4858
Microsemi Corporation

N CHANNEL JFET

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): 40V
  • Current - Drain (Idss) @ Vds (Vgs=0): 80mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 4V @ 0.5nA
  • Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 360mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
Paket: TO-206AA, TO-18-3 Metal Can
Lager7.456
40V
40V
80mA @ 15V
-
4V @ 0.5nA
18pF @ 10V
-
360mW
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)
MX2N4857UB
Microsemi Corporation

N CHANNEL JFET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager5.968
-
-
-
-
-
-
-
-
-
-
-
-
MX2N4857
Microsemi Corporation

N CHANNEL JFET

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): 40V
  • Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 6V @ 500pA
  • Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
  • Resistance - RDS(On): 40 Ohm
  • Power - Max: 360mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
Paket: TO-206AA, TO-18-3 Metal Can
Lager2.176
40V
40V
100mA @ 15V
-
6V @ 500pA
18pF @ 10V
40 Ohm
360mW
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)
MX2N4856UB
Microsemi Corporation

N CHANNEL JFET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager4.688
-
-
-
-
-
-
-
-
-
-
-
-
MX2N4856
Microsemi Corporation

N CHANNEL JFET

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): 40V
  • Current - Drain (Idss) @ Vds (Vgs=0): 175mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 4V @ 0.5nA
  • Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
  • Resistance - RDS(On): 25 Ohm
  • Power - Max: 360mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
Paket: TO-206AA, TO-18-3 Metal Can
Lager5.760
40V
40V
175mA @ 15V
-
4V @ 0.5nA
18pF @ 10V
25 Ohm
360mW
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)
MX2N4393UB
Microsemi Corporation

N CHANNEL JFET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager6.608
-
-
-
-
-
-
-
-
-
-
-
-
MX2N4393
Microsemi Corporation

N CHANNEL JFET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager2.864
-
-
-
-
-
-
-
-
-
-
-
-
MX2N4392UB
Microsemi Corporation

N CHANNEL JFET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager7.552
-
-
-
-
-
-
-
-
-
-
-
-
MX2N4392
Microsemi Corporation

N CHANNEL JFET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager5.312
-
-
-
-
-
-
-
-
-
-
-
-
MX2N4391UB
Microsemi Corporation

N CHANNEL JFET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager7.520
-
-
-
-
-
-
-
-
-
-
-
-
MX2N4391
Microsemi Corporation

N CHANNEL JFET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager6.528
-
-
-
-
-
-
-
-
-
-
-
-