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Fairchild/ON Semiconductor |
IGBT 1200V 50A 313W TO247
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 50A
- Current - Collector Pulsed (Icm): 75A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
- Power - Max: 313W
- Switching Energy: 1.42mJ (on), 1.16mJ (off)
- Input Type: Standard
- Gate Charge: 169nC
- Td (on/off) @ 25°C: 26ns/151ns
- Test Condition: 600V, 25A, 10 Ohm, 15V
- Reverse Recovery Time (trr): 535ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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Paket: TO-247-3 |
Lager4.848 |
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Fairchild/ON Semiconductor |
IGBT 360V 44A 187W D2PAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 360V
- Current - Collector (Ic) (Max): 44A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.4V @ 4V, 6A
- Power - Max: 187W
- Switching Energy: -
- Input Type: Logic
- Gate Charge: 20nC
- Td (on/off) @ 25°C: -/5.4µs
- Test Condition: 300V, 1 kOhm, 5V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager6.608 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 200V 35A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 173nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 176W (Tc)
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 17.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Paket: TO-220-3 |
Lager3.664 |
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Fairchild/ON Semiconductor |
MOSFET P-CH 20V 2.8A SSOT-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 130 mOhm @ 2.8A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SuperSOT?-6
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Paket: SOT-23-6 Thin, TSOT-23-6 |
Lager96.420 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 56A POWER33
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 87A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4790pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
- Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Power33
- Package / Case: 8-PowerWDFN
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Paket: 8-PowerWDFN |
Lager4.464 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 6.5A SOT-223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta)
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223-4
- Package / Case: TO-261-4, TO-261AA
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Paket: TO-261-4, TO-261AA |
Lager177.132 |
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Fairchild/ON Semiconductor |
MOSFET P-CH 30V 5A SOT-223-4
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta)
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 5A, 10V
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223-4
- Package / Case: TO-261-4, TO-261AA
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Paket: TO-261-4, TO-261AA |
Lager1.386.900 |
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Fairchild/ON Semiconductor |
TRANS PNP DARL 80V 2A TO-220
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
- Current - Collector Cutoff (Max): 2mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
- Power - Max: 2W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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Paket: TO-220-3 |
Lager2.100 |
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Fairchild/ON Semiconductor |
TRANS NPN 160V 1A SOT-89
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 160V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 200mA, 5V
- Power - Max: 500mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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Paket: TO-243AA |
Lager7.968 |
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Fairchild/ON Semiconductor |
TRANS NPN 60V 3A TO-226
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
- Power - Max: 1W
- Frequency - Transition: 75MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-226
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Paket: TO-226-3, TO-92-3 Long Body |
Lager7.872 |
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Fairchild/ON Semiconductor |
TRANS PREBIAS PNP 200MW SOT323
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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Paket: SC-70, SOT-323 |
Lager423.600 |
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Fairchild/ON Semiconductor |
DIODE ZENER 8.2V 500MW DO35
- Voltage - Zener (Nom) (Vz): 8.2V
- Tolerance: ±5%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 6.5 Ohms
- Current - Reverse Leakage @ Vr: 50µA @ 6.2V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -65°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
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Paket: DO-204AH, DO-35, Axial |
Lager5.360 |
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Fairchild/ON Semiconductor |
DIODE ZENER 56V 1W DO41
- Voltage - Zener (Nom) (Vz): 56V
- Tolerance: ±5%
- Power - Max: 1W
- Impedance (Max) (Zzt): 110 Ohms
- Current - Reverse Leakage @ Vr: 5µA @ 42.6V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -65°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
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Paket: DO-204AL, DO-41, Axial |
Lager5.872 |
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Fairchild/ON Semiconductor |
DIODE ZENER 6.2V 1W DO41
- Voltage - Zener (Nom) (Vz): 6.2V
- Tolerance: ±6%
- Power - Max: 1W
- Impedance (Max) (Zzt): 4 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 3V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -65°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
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Paket: DO-204AL, DO-41, Axial |
Lager6.912 |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 1KV 1A DO41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -55°C ~ 175°C
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Paket: DO-204AL, DO-41, Axial |
Lager7.584 |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 120V 200MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 120V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 100nA @ 100V
- Capacitance @ Vr, F: 5pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: 175°C (Max)
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Paket: DO-204AH, DO-35, Axial |
Lager2.080 |
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Fairchild/ON Semiconductor |
DIODE ARRAY GP 175V 200MA SOT23
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 175V
- Current - Average Rectified (Io) (per Diode): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 100nA @ 175V
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Paket: TO-236-3, SC-59, SOT-23-3 |
Lager219.240 |
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Fairchild/ON Semiconductor |
RECT BRIDGE GPP 15A 50V GBPC-W
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 50V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-Square, GBPC-W
- Supplier Device Package: GBPC-W
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Paket: 4-Square, GBPC-W |
Lager4.016 |
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Fairchild/ON Semiconductor |
IC LOAD SWITCH ADJ CURR SOT23-5
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 4.5 V ~ 20 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 2A
- Rds On (Typ): 230 mOhm
- Input Type: Non-Inverting
- Features: -
- Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SOT-23-5
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Paket: SC-74A, SOT-753 |
Lager40.680 |
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Fairchild/ON Semiconductor |
IC SWITCH BUS 24BIT HS 56-TSSOP
- Type: Bus Switch
- Circuit: 12 x 1:1
- Independent Circuits: 2
- Current - Output High, Low: -
- Voltage Supply Source: Single Supply
- Voltage - Supply: 2.3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 56-TFSOP (0.240", 6.10mm Width)
- Supplier Device Package: 56-TSSOP
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Paket: 56-TFSOP (0.240", 6.10mm Width) |
Lager2.704 |
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Fairchild/ON Semiconductor |
IC GATE NAND 2CH 4-INP 14-TSSOP
- Logic Type: NAND Gate
- Number of Circuits: 2
- Number of Inputs: 4
- Features: -
- Voltage - Supply: 2 V ~ 6 V
- Current - Quiescent (Max): 2µA
- Current - Output High, Low: 24mA, 24mA
- Logic Level - Low: 0.9 V ~ 1.65 V
- Logic Level - High: 2.1 V ~ 3.85 V
- Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-TSSOP
- Package / Case: 14-TSSOP (0.173", 4.40mm Width)
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Paket: 14-TSSOP (0.173", 4.40mm Width) |
Lager7.936 |
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Fairchild/ON Semiconductor |
IC GATE OR 1CH 2-INP SOT-23-5
- Logic Type: OR Gate
- Number of Circuits: 1
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 4.5 V ~ 5.5 V
- Current - Quiescent (Max): 1µA
- Current - Output High, Low: 2mA, 2mA
- Logic Level - Low: 0.8V
- Logic Level - High: 2V
- Max Propagation Delay @ V, Max CL: 26ns @ 5.5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-5
- Package / Case: SC-74A, SOT-753
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Paket: SC-74A, SOT-753 |
Lager14.568 |
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Fairchild/ON Semiconductor |
IC BUFF DVR LOW V N-INV 20SSOP
- Logic Type: Buffer, Non-Inverting
- Number of Elements: 2
- Number of Bits per Element: 4
- Input Type: -
- Output Type: Open Drain
- Current - Output High, Low: -, 24mA
- Voltage - Supply: 2 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-SSOP (0.209", 5.30mm Width)
- Supplier Device Package: 20-SSOP
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Paket: 20-SSOP (0.209", 5.30mm Width) |
Lager7.568 |
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Fairchild/ON Semiconductor |
LED RED DIFFUSED 2SMD
- Color: Red
- Configuration: -
- Lens Color: Red
- Lens Transparency: Diffused
- Millicandela Rating: 3mcd
- Lens Style/Size: Round with Domed Top, 1.75mm
- Voltage - Forward (Vf) (Typ): 1.8V
- Current - Test: 10mA
- Viewing Angle: 50°
- Mounting Type: Surface Mount
- Wavelength - Dominant: -
- Wavelength - Peak: 635nm
- Features: -
- Package / Case: 2-SMD, Yoke Bend
- Supplier Device Package: Yoke Lead
- Size / Dimension: 2.20mm L x 2.10mm W
- Height (Max): 2.92mm
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Paket: 2-SMD, Yoke Bend |
Lager7.884 |
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Fairchild/ON Semiconductor |
TVS DIODE 90VWM 146VC DO15
- Type: Zener
- Unidirectional Channels: -
- Bidirectional Channels: 1
- Voltage - Reverse Standoff (Typ): 90V
- Voltage - Breakdown (Min): 100V
- Voltage - Clamping (Max) @ Ipp: 146V
- Current - Peak Pulse (10/1000µs): 3.4A
- Power - Peak Pulse: 500W
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
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Paket: DO-204AC, DO-15, Axial |
Lager4.284 |
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Fairchild/ON Semiconductor |
DETECTOR/TRANSISTOR PHOTO TO-18
- Voltage - Collector Emitter Breakdown (Max): 50V
- Current - Collector (Ic) (Max): -
- Current - Dark (Id) (Max): 100nA
- Wavelength: 880nm
- Viewing Angle: 80°
- Power - Max: 300mW
- Mounting Type: Through Hole
- Orientation: Top View
- Operating Temperature: -65°C ~ 125°C (TA)
- Package / Case: TO-206AA, TO-18-3 Metal Can
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Paket: TO-206AA, TO-18-3 Metal Can |
Lager19.008 |
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Fairchild/ON Semiconductor |
PHOTODIODE SIDELOOKER PIN TO-92
- Wavelength: 930nm
- Color - Enhanced: -
- Spectral Range: -
- Diode Type: PIN
- Responsivity @ nm: -
- Response Time: 50ns
- Voltage - DC Reverse (Vr) (Max): 32V
- Current - Dark (Typ): 30nA
- Active Area: -
- Viewing Angle: 90°
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Through Hole
- Package / Case: TO-226-2, TO-92-2 (TO-226AC)
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Paket: TO-226-2, TO-92-2 (TO-226AC) |
Lager2.988 |
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Fairchild/ON Semiconductor |
OPTOISOLTR 7.5KV PHOTO FET 6-DIP
- Number of Channels: 1
- Voltage - Isolation: 7500Vpk
- Current Transfer Ratio (Min): -
- Current Transfer Ratio (Max): -
- Turn On / Turn Off Time (Typ): 45µs, 45µs (Max)
- Rise / Fall Time (Typ): -
- Input Type: DC
- Output Type: MOSFET
- Voltage - Output (Max): 30V
- Current - Output / Channel: -
- Voltage - Forward (Vf) (Typ): 1.3V
- Current - DC Forward (If) (Max): 60mA
- Vce Saturation (Max): -
- Operating Temperature: -40°C ~ 100°C
- Mounting Type: Through Hole
- Package / Case: 6-DIP (0.300", 7.62mm)
- Supplier Device Package: 6-DIP
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Paket: 6-DIP (0.300", 7.62mm) |
Lager47.436 |
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