GeneSiC Semiconductor Produkte - Dioden - HF

Teilenummer	Hersteller	Beschreibung	Paket	Lager	Voltage - Peak Reverse (Max)	Current - Max	Capacitance @ Vr, F	Resistance @ If, F	Power Dissipation (Max)	Operating Temperature	Package / Case	Supplier Device Package
GA01PNS80-220	GeneSiC Semiconductor	DIODE SILICON CARBIDE 8KV Diode Type: PIN - Single Voltage - Peak Reverse (Max): 8000V Current - Max: 2A Capacitance @ Vr, F: 4pF @ 1000V, 1MHz Resistance @ If, F: - Power Dissipation (Max): - Operating Temperature: -55°C ~ 175°C (TJ) Package / Case: Axial Supplier Device Package: -	Paket: Axial	Lager5.616	8000V	2A	4pF @ 1000V, 1MHz	-	-	-55°C ~ 175°C (TJ)	Axial	-
GA01PNS150-220	GeneSiC Semiconductor	DIODE SILICON CARBIDE 15KV 1A Diode Type: PIN - Single Voltage - Peak Reverse (Max): 15000V Current - Max: 1A Capacitance @ Vr, F: 7pF @ 1000V, 1MHz Resistance @ If, F: - Power Dissipation (Max): - Operating Temperature: -55°C ~ 175°C (TJ) Package / Case: Axial Supplier Device Package: -	Paket: Axial	Lager7.808	15000V	1A	7pF @ 1000V, 1MHz	-	-	-55°C ~ 175°C (TJ)	Axial	-
GA01PNS150-201	GeneSiC Semiconductor	SIC DIODE 15000V 1A DO-201 Diode Type: PIN - Single Voltage - Peak Reverse (Max): 15000V Current - Max: 1 A Capacitance @ Vr, F: 22pF @ 1V, 1MHz Resistance @ If, F: - Power Dissipation (Max): - Operating Temperature: -55°C ~ 175°C (TJ) Package / Case: DO-201AD, Axial Supplier Device Package: DO-201	Paket: -	Request a Quote	15000V	1 A	22pF @ 1V, 1MHz	-	-	-55°C ~ 175°C (TJ)	DO-201AD, Axial	DO-201
GE10MPS06Q	GeneSiC Semiconductor	650V 10A PQFN 8X8 SIC SCHOTTKY M Diode Type: Schottky - Single Voltage - Peak Reverse (Max): 650V Current - Max: 10 A Capacitance @ Vr, F: - Resistance @ If, F: - Power Dissipation (Max): - Operating Temperature: - Package / Case: 4-PowerVSFN Supplier Device Package: QFN8x8	Paket: -	Request a Quote	650V	10 A	-	-	-	-	4-PowerVSFN	QFN8x8
GE2X12MPS06D	GeneSiC Semiconductor	650V 20A TO-247-3 SIC SCHOTTKY M Diode Type: Schottky - 1 Pair Common Cathode Voltage - Peak Reverse (Max): 650V Current - Max: 24 A Capacitance @ Vr, F: - Resistance @ If, F: - Power Dissipation (Max): - Operating Temperature: - Package / Case: TO-247-3 Supplier Device Package: TO-247-3	Paket: -	Request a Quote	650V	24 A	-	-	-	-	TO-247-3	TO-247-3
GE06MPS06Q	GeneSiC Semiconductor	650V 6A PQFN 8X8 SIC SCHOTTKY MP Diode Type: Schottky - Single Voltage - Peak Reverse (Max): 650V Current - Max: 6 A Capacitance @ Vr, F: - Resistance @ If, F: - Power Dissipation (Max): - Operating Temperature: - Package / Case: 4-PowerVSFN Supplier Device Package: QFN8x8	Paket: -	Request a Quote	650V	6 A	-	-	-	-	4-PowerVSFN	QFN8x8
GE12MPS06Q	GeneSiC Semiconductor	650V 12A PQFN 8X8 SIC SCHOTTKY M Diode Type: Schottky - Single Voltage - Peak Reverse (Max): 650V Current - Max: 12 A Capacitance @ Vr, F: - Resistance @ If, F: - Power Dissipation (Max): - Operating Temperature: - Package / Case: 4-PowerVSFN Supplier Device Package: QFN8x8	Paket: -	Request a Quote	650V	12 A	-	-	-	-	4-PowerVSFN	QFN8x8
GE12MPS06E	GeneSiC Semiconductor	650V 12A TO-252-2 SIC SCHOTTKY M Diode Type: Schottky - Single Voltage - Peak Reverse (Max): 650V Current - Max: 12 A Capacitance @ Vr, F: - Resistance @ If, F: - Power Dissipation (Max): - Operating Temperature: - Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2	Paket: -	Request a Quote	650V	12 A	-	-	-	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252-2
GE12MPS06A	GeneSiC Semiconductor	650V 12A TO-220-2 SIC SCHOTTKY M Diode Type: Schottky - Single Voltage - Peak Reverse (Max): 650V Current - Max: 12 A Capacitance @ Vr, F: - Resistance @ If, F: - Power Dissipation (Max): - Operating Temperature: - Package / Case: TO-220-2 Supplier Device Package: TO-220-2	Paket: -	Request a Quote	650V	12 A	-	-	-	-	TO-220-2	TO-220-2
GE08MPS06Q	GeneSiC Semiconductor	650V 8A PQFN 8X8 SIC SCHOTTKY MP Diode Type: Schottky - Single Voltage - Peak Reverse (Max): 650V Current - Max: 8 A Capacitance @ Vr, F: - Resistance @ If, F: - Power Dissipation (Max): - Operating Temperature: - Package / Case: 4-PowerVSFN Supplier Device Package: QFN8x8	Paket: -	Request a Quote	650V	8 A	-	-	-	-	4-PowerVSFN	QFN8x8
GE04MPS06Q	GeneSiC Semiconductor	650V 4A PQFN 8X8 SIC SCHOTTKY MP Diode Type: Schottky - Single Voltage - Peak Reverse (Max): 650V Current - Max: 4 A Capacitance @ Vr, F: - Resistance @ If, F: - Power Dissipation (Max): - Operating Temperature: - Package / Case: 4-PowerVSFN Supplier Device Package: QFN8x8	Paket: -	Request a Quote	650V	4 A	-	-	-	-	4-PowerVSFN	QFN8x8