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GeneSiC Semiconductor Produkte

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GA100JT17-227
GeneSiC Semiconductor

TRANS SJT 1700V 160A SOT227

  • FET Type: -
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1700V
  • Current - Continuous Drain (Id) @ 25°C: 160A
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 800V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 535W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 100A
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4, miniBLOC
Paket: SOT-227-4, miniBLOC
Lager2.064
MBRH200150
GeneSiC Semiconductor

DIODE MODULE 150V 200A D-67

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 200A
  • Voltage - Forward (Vf) (Max) @ If: 880mV @ 200A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-67
  • Supplier Device Package: D-67
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: D-67
Lager4.768
GKN130/08
GeneSiC Semiconductor

DIODE GEN PURP 800V 165A DO205AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 165A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 22mA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -40°C ~ 180°C
Paket: DO-205AA, DO-8, Stud
Lager5.504
MBR6060R
GeneSiC Semiconductor

DIODE SCHOTTKY REV 60V DO5

  • Diode Type: Schottky, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: DO-203AB, DO-5, Stud
Lager5.696
hot 1N1188
GeneSiC Semiconductor

DIODE GEN PURP 400V 35A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 35A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -65°C ~ 190°C
Paket: DO-203AB, DO-5, Stud
Lager10.212
S40MR
GeneSiC Semiconductor

DIODE GEN PURP REV 1KV 40A DO5

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 40A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -65°C ~ 190°C
Paket: DO-203AB, DO-5, Stud
Lager6.496
FR70G02
GeneSiC Semiconductor

DIODE GEN PURP 400V 70A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 70A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 70A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 25µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -40°C ~ 125°C
Paket: DO-203AB, DO-5, Stud
Lager4.784
S12GR
GeneSiC Semiconductor

DIODE GEN PURP REV 400V 12A DO4

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-203AA, DO-4, Stud
Lager5.776
1N3673AR
GeneSiC Semiconductor

DIODE GEN PURP REV 1KV 12A DO4

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 200°C
Paket: DO-203AA, DO-4, Stud
Lager6.204
UFT7360M
GeneSiC Semiconductor

DIODE GEN PURP 600V 70A D61-3M

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 70A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 35A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 90ns
  • Current - Reverse Leakage @ Vr: 20µA @ 600V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: D61-3M
  • Supplier Device Package: D61-3M
Paket: D61-3M
Lager3.488
UFT10040
GeneSiC Semiconductor

DIODE GEN PURP 400V 50A TO249AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io) (per Diode): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 70ns
  • Current - Reverse Leakage @ Vr: 25µA @ 400V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: TO-249AB
  • Supplier Device Package: TO-249AB
Paket: TO-249AB
Lager7.392
MURF40020
GeneSiC Semiconductor

DIODE GEN PURP 200V 200A TO244

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io) (per Diode): 200A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 200A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 25µA @ 200V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: TO-244AB
  • Supplier Device Package: TO-244
Paket: TO-244AB
Lager5.184
MURF30060
GeneSiC Semiconductor

DIODE GEN PURP 600V 150A TO244

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 25µA @ 600V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: TO-244AB
  • Supplier Device Package: TO-244
Paket: TO-244AB
Lager3.472
MBRTA80020RL
GeneSiC Semiconductor

DIODE SCHOTTKY 20V 400A 3TOWER

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io) (per Diode): 400A
  • Voltage - Forward (Vf) (Max) @ If: 580mV @ 400A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 20V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
Paket: Three Tower
Lager2.320
MBRF30035R
GeneSiC Semiconductor

DIODE SCHOTTKY 35V 150A TO244AB

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io) (per Diode): 150A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 150A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 35V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: TO-244AB
  • Supplier Device Package: TO-244AB
Paket: TO-244AB
Lager7.072
MBRT30035RL
GeneSiC Semiconductor

DIODE SCHOTTKY 35V 150A 3 TOWER

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io) (per Diode): 150A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 35V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
Paket: Three Tower
Lager5.712
MBR60040CT
GeneSiC Semiconductor

DIODE MODULE 40V 300A 2TOWER

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io) (per Diode): 300A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 300A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 20V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Twin Tower
  • Supplier Device Package: Twin Tower
Paket: Twin Tower
Lager2.608
MURTA30040
GeneSiC Semiconductor

DIODE GEN PURP 400V 150A 3 TOWER

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io) (per Diode): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25µA @ 400V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
Paket: Three Tower
Lager7.552
MBR50045CT
GeneSiC Semiconductor

DIODE MODULE 45V 500A 2TOWER

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io) (per Diode): 500A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 20V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Twin Tower
  • Supplier Device Package: Twin Tower
Paket: Twin Tower
Lager3.552
MSRTA30080(A)D
GeneSiC Semiconductor

DIODE GEN PURP 800V 300A 3 TOWER

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io) (per Diode): 300A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 300A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20µA @ 800V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
Paket: Three Tower
Lager6.448
MBR40045CT
GeneSiC Semiconductor

DIODE MODULE 45V 400A 2TOWER

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io) (per Diode): 400A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 20V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Twin Tower
  • Supplier Device Package: Twin Tower
Paket: Twin Tower
Lager6.480
MBRT300200
GeneSiC Semiconductor

DIODE SCHOTTKY 200V 150A 3 TOWER

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io) (per Diode): 150A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 150A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 200V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
Paket: Three Tower
Lager4.112
MBRT300100
GeneSiC Semiconductor

DIODE MODULE 100V 300A 3TOWER

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 300A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 880mV @ 150A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 20V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
Paket: Three Tower
Lager5.552
MBRT12045
GeneSiC Semiconductor

DIODE MODULE 45V 120A 3TOWER

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io) (per Diode): 120A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 20V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
Paket: Three Tower
Lager6.560
MSRT15060(A)
GeneSiC Semiconductor

DIODE MODULE 600V 150A 3TOWER

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 150A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 150A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
Paket: Three Tower
Lager4.608
MBR2X120A120
GeneSiC Semiconductor

DIODE SCHOTTKY 120V 120A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120V
  • Current - Average Rectified (Io) (per Diode): 120A
  • Voltage - Forward (Vf) (Max) @ If: 880mV @ 120A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 120V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
Paket: SOT-227-4, miniBLOC
Lager4.000
MBR12045CTR
GeneSiC Semiconductor

DIODE MODULE 45V 120A 2TOWER

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io) (per Diode): 120A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 650mV @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 20V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Twin Tower
  • Supplier Device Package: Twin Tower
Paket: Twin Tower
Lager6.160
GBPC2502T
GeneSiC Semiconductor

DIODE BRIDGE 200V 25A GBPC-T/W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
Paket: 4-Square, GBPC
Lager5.136
KBPC2508W
GeneSiC Semiconductor

DIODE BRIDGE 800V 25A KBPC-W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, KBPC-W
  • Supplier Device Package: KBPC-W
Paket: 4-Square, KBPC-W
Lager3.584
KBL608G
GeneSiC Semiconductor

DIODE BRIDGE 800V 6A KBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBL
  • Supplier Device Package: KBL
Paket: 4-SIP, KBL
Lager4.960