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Global Power Technologies Group |
SILICON IGBT MODULES
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 200A
- Power - Max: 640W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
- Current - Collector Cutoff (Max): 1mA
- Input Capacitance (Cies) @ Vce: 13.7nF @ 25V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Paket: Module |
Lager2.944 |
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Global Power Technologies Group |
IGBT MODULE 1250V 600A CHASSIS
- IGBT Type: Trench Field Stop
- Configuration: Three Level Inverter
- Voltage - Collector Emitter Breakdown (Max): 1250V
- Current - Collector (Ic) (Max): 600A
- Power - Max: 2500W
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 300A
- Current - Collector Cutoff (Max): 1mA
- Input Capacitance (Cies) @ Vce: 30.8nF @ 25V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Paket: Module |
Lager3.328 |
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Global Power Technologies Group |
IGBT MODULE 1200V 285A
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 285A
- Power - Max: 1087W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
- Current - Collector Cutoff (Max): 1mA
- Input Capacitance (Cies) @ Vce: 21.2nF @ 25V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Paket: Module |
Lager3.584 |
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Global Power Technologies Group |
IGBT MODULE 1200V 335A
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 335A
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
- Current - Collector Cutoff (Max): 1mA
- Input Capacitance (Cies) @ Vce: 22.4nF @ 25V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Paket: Module |
Lager5.456 |
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Global Power Technologies Group |
MOSFET N-CH 900V 11A TO3PN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 416W (Tc)
- Rds On (Max) @ Id, Vgs: 900 mOhm @ 5.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PN
- Package / Case: TO-3P-3, SC-65-3
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Paket: TO-3P-3, SC-65-3 |
Lager4.912 |
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Global Power Technologies Group |
MOSFET N-CH 600V 7.5A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 39W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.75A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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Paket: TO-220-3 Full Pack |
Lager2.752 |
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Global Power Technologies Group |
MOSFET N-CH 650V 5.5A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1177pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 39W (Tc)
- Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.75A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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Paket: TO-220-3 Full Pack |
Lager2.288 |
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Global Power Technologies Group |
MOSFET N-CH 900V 9A TO3PN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 312W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 4.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PN
- Package / Case: TO-3P-3, SC-65-3
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Paket: TO-3P-3, SC-65-3 |
Lager2.752 |
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Global Power Technologies Group |
MOSFET N-CH 650V 1.8A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 353pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 52W (Tc)
- Rds On (Max) @ Id, Vgs: 4.6 Ohm @ 900mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Paket: TO-251-3 Short Leads, IPak, TO-251AA |
Lager4.336 |
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Global Power Technologies Group |
MOSFET N-CH 600V 16A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3039pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 48W (Tc)
- Rds On (Max) @ Id, Vgs: 470 mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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Paket: TO-220-3 Full Pack |
Lager4.944 |
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Global Power Technologies Group |
MOSFET N-CH 600V 12A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2308pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 53W (Tc)
- Rds On (Max) @ Id, Vgs: 650 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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Paket: TO-220-3 Full Pack |
Lager4.064 |
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Global Power Technologies Group |
MOSFET N-CH 900V 4A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 123W (Tc)
- Rds On (Max) @ Id, Vgs: 4 Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Paket: TO-220-3 |
Lager7.456 |
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Global Power Technologies Group |
MOSFET N-CH 500V 2.5A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 52W (Tc)
- Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 1.25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager5.264 |
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Global Power Technologies Group |
MOSFET N-CH 400V 2A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager6.032 |
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Global Power Technologies Group |
SIC MOSFET 6-PACK MODULE B2_EASY
- Type: MOSFET
- Configuration: 3 Phase
- Current: 80A
- Voltage: 1200V
- Voltage - Isolation: 2500Vrms
- Package / Case: Power Module
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Paket: Power Module |
Lager3.632 |
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Global Power Technologies Group |
SI IGBT & SIC SBD HYBRID MODULES
- Type: IGBT
- Configuration: 3 Phase
- Current: 195A
- Voltage: 1200V
- Voltage - Isolation: 2500Vrms
- Package / Case: Power Module
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Paket: Power Module |
Lager2.128 |
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Global Power Technologies Group |
SIC MOSFET/ SBD MODULE SOT-227 C
- Type: MOSFET
- Configuration: 1 Phase
- Current: 60A
- Voltage: 1200V
- Voltage - Isolation: 2500Vrms
- Package / Case: SOT-227-4, miniBLOC
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Paket: SOT-227-4, miniBLOC |
Lager7.616 |
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Global Power Technologies Group |
SI IGBT & SIC SBD HYBRID MODULES
- Type: IGBT
- Configuration: 3 Phase
- Current: 30A
- Voltage: 600V
- Voltage - Isolation: 2500Vrms
- Package / Case: Power Module
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Paket: Power Module |
Lager3.408 |
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Global Power Technologies Group |
DIODE SCHOTTKY 600V 36A TO247-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 36A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 36A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: 1460pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2
- Operating Temperature - Junction: -55°C ~ 135°C
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Paket: TO-247-2 |
Lager5.744 |
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Global Power Technologies Group |
DIODE SCHOTTKY 600V 24A TO247-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 24A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 24A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: 973pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2
- Operating Temperature - Junction: -55°C ~ 135°C
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Paket: TO-247-2 |
Lager6.784 |
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Global Power Technologies Group |
DIODE SCHOTTKY 600V 3A TO252-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 3A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: 122pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252-2
- Operating Temperature - Junction: -55°C ~ 135°C
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager4.960 |
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Global Power Technologies Group |
DIODE SCHOTTKY 650V 6A TO252-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 6A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.65V @ 6A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 60µA @ 650V
- Capacitance @ Vr, F: 316pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252-2L (DPAK)
- Operating Temperature - Junction: -55°C ~ 175°C
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager8.532 |
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Global Power Technologies Group |
DIODE SBD SCHOTT 600V 10A SOT227
- Diode Configuration: 2 Independent
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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Paket: SOT-227-4, miniBLOC |
Lager4.688 |
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Global Power Technologies Group |
DIODE FAST REC 200V 120A SOT227
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io) (per Diode): 120A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 120A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 100ns
- Current - Reverse Leakage @ Vr: 25µA @ 200V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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Paket: SOT-227-4, miniBLOC |
Lager5.920 |
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Global Power Technologies Group |
DIODE SCHOTTKY 60V 240A SOT227
- Diode Configuration: 2 Independent
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io) (per Diode): 120A
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 120A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 60V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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Paket: SOT-227-4, miniBLOC |
Lager5.568 |
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Global Power Technologies Group |
DIODE SCHOTTKY 120V 100A SOT227
- Diode Configuration: 2 Independent
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 120V
- Current - Average Rectified (Io) (per Diode): 100A
- Voltage - Forward (Vf) (Max) @ If: 880mV @ 100A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3mA @ 120V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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Paket: SOT-227-4, miniBLOC |
Lager4.928 |
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Global Power Technologies Group |
DIODE SCHOTTKY 120V 50A SOT227
- Diode Configuration: 2 Independent
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 120V
- Current - Average Rectified (Io) (per Diode): 50A
- Voltage - Forward (Vf) (Max) @ If: 880mV @ 50A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3mA @ 120V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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Paket: SOT-227-4, miniBLOC |
Lager5.520 |
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Global Power Technologies Group |
DIODE SCHOTTKY 45V 50A SOT227
- Diode Configuration: 2 Independent
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io) (per Diode): 50A
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 50A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 45V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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Paket: SOT-227-4, miniBLOC |
Lager6.492 |
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Global Power Technologies Group |
MOD SBD BRIDGE 1200V 45A SOT227
- Diode Type: Single Phase
- Technology: Silicon Carbide Schottky
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 45A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 45A
- Current - Reverse Leakage @ Vr: 300µA @ 1200V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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Paket: SOT-227-4, miniBLOC |
Lager5.152 |
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Global Power Technologies Group |
MOD SBD BRIDGE 1200V 30A SOT227
- Diode Type: Single Phase
- Technology: Silicon Carbide Schottky
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A
- Current - Reverse Leakage @ Vr: 200µA @ 1200V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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Paket: SOT-227-4, miniBLOC |
Lager4.224 |
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