Bild |
Teilenummer |
Hersteller |
Beschreibung |
Paket |
Lager |
Anzahl |
Channel Type | Number of Drivers | Gate Type | Voltage - Supply | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | Input Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS Integrated Circuits Division |
14A 5LEAD TO-263 NON INVERTING
|
Paket: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA |
Lager4.240 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 14A, 14A | Non-Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D2Pak (5 Leads + Tab), TO-263BA | TO-263 (D2Pak) |
||
IXYS Integrated Circuits Division |
IC GATE DRIVER LOW SIDE 5TO263
|
Paket: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA |
Lager6.608 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 9 V ~ 35 V | 0.8V, 3.5V | 30A, 30A | Non-Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D2Pak (5 Leads + Tab), TO-263BA | TO-263-5 |
||
IXYS Integrated Circuits Division |
IC GATE DRIVER LOW SIDE 5TO220
|
Paket: TO-220-5 |
Lager6.400 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 9 V ~ 35 V | 0.8V, 3.5V | 30A, 30A | Non-Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
||
IXYS Integrated Circuits Division |
IC GATE DRIVER LOW SIDE 5TO263
|
Paket: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA |
Lager2.656 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 9 V ~ 35 V | 0.8V, 3.5V | 30A, 30A | Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D2Pak (5 Leads + Tab), TO-263BA | TO-263-5 |
||
IXYS Integrated Circuits Division |
IC GATE DRIVER LOW SIDE 5TO263
|
Paket: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA |
Lager6.128 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 12.5 V ~ 35 V | 0.8V, 3.5V | 30A, 30A | Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D2Pak (5 Leads + Tab), TO-263BA | TO-263-5 |
||
IXYS Integrated Circuits Division |
IC GATE DRIVER LOW SIDE 5TO220
|
Paket: TO-220-5 |
Lager5.296 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 9 V ~ 35 V | 0.8V, 3.5V | 30A, 30A | Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
||
IXYS Integrated Circuits Division |
IC GATE DRIVER LOW SIDE 5TO220
|
Paket: TO-220-5 |
Lager3.232 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 9 V ~ 35 V | 0.8V, 3.5V | 30A, 30A | Non-Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
||
IXYS Integrated Circuits Division |
IC GATE DRIVER LOW SIDE 5TO220
|
Paket: TO-220-5 |
Lager25.032 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 12.5 V ~ 35 V | 0.8V, 3.5V | 30A, 30A | Non-Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
||
IXYS Integrated Circuits Division |
IC GATE DRIVER LOW SIDE 5TO220
|
Paket: TO-220-5 |
Lager5.792 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 12.5 V ~ 35 V | 0.8V, 3.5V | 30A, 30A | Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
||
IXYS Integrated Circuits Division |
14A 5LEAD TO-263 NON INVERTING
|
Paket: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA |
Lager3.760 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 14A, 14A | Non-Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D2Pak (5 Leads + Tab), TO-263BA | TO-263-5 |
||
IXYS Integrated Circuits Division |
14A 5 LEAD TO-263 INVERTING
|
Paket: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA |
Lager2.656 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 14A, 14A | Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D2Pak (5 Leads + Tab), TO-263BA | TO-263-5 |
||
IXYS Integrated Circuits Division |
14A 5 PIN TO-220 INVERTING
|
Paket: TO-220-5 Formed Leads |
Lager2.064 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 14A, 14A | Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 Formed Leads | TO-220-5 |
||
IXYS Integrated Circuits Division |
14A 8SOIC EXP MTL NON INVERTING
|
Paket: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Lager56.796 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 14A, 14A | Non-Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
||
IXYS Integrated Circuits Division |
14A 8LEAD SOIC EXP MTL INVERTING
|
Paket: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Lager39.576 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 14A, 14A | Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
||
IXYS Integrated Circuits Division |
14A 8SOIC EXP MTL NON INV W/ENAB
|
Paket: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Lager41.880 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 14A, 14A | Non-Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
||
IXYS Integrated Circuits Division |
14A 8SOIC EXP MTL NON INVERTING
|
Paket: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Lager7.152 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 14A, 14A | Non-Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
||
IXYS Integrated Circuits Division |
14A 8LEAD SOIC EXP MTL INVERTING
|
Paket: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Lager6.224 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 14A, 14A | Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
||
IXYS Integrated Circuits Division |
14A 8SOIC EXP MTL NON INV W/ENAB
|
Paket: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Lager5.264 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 14A, 14A | Non-Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
||
IXYS Integrated Circuits Division |
IC IGBT GATE DVR DUAL 16SOIC
|
Paket: 16-SOIC (0.154", 3.90mm Width) |
Lager3.056 |
|
Independent | 2 | IGBT | -10 V ~ 25 V | 0.8V, 2V | 2A, 4A | Non-Inverting | - | -, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
||
IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV TO263-5
|
Paket: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA |
Lager19.368 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D2Pak (5 Leads + Tab), TO-263BA | TO-263-5 |
||
IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV TO220-5
|
Paket: TO-220-5 Formed Leads |
Lager12.384 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 Formed Leads | TO-220-5 |
||
IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV TO220-5
|
Paket: TO-220-5 |
Lager4.816 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
||
IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV TO263-5
|
Paket: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA |
Lager7.872 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D2Pak (5 Leads + Tab), TO-263BA | TO-263 |
||
IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL HS 8SOIC
|
Paket: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Lager6.528 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
||
IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL HS 8SOIC
|
Paket: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Lager5.184 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
||
IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL HS 8SOIC
|
Paket: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Lager3.008 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Inverting, Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
||
IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL HS 8SOIC
|
Paket: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Lager3.552 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |