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IXYS Produkte - Dioden - Gleichrichter - Einzeln

Aufzeichnungen 504
Page  8/17
Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
DSA35-16A
IXYS

DIODE AVALANCHE 1.6KV 49A DO203

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 49A
  • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 150A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4mA @ 1600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB
  • Operating Temperature - Junction: -40°C ~ 180°C
Paket: DO-203AB, DO-5, Stud
Lager13.800
1600V
49A
1.55V @ 150A
Standard Recovery >500ns, > 200mA (Io)
-
4mA @ 1600V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-203AB
-40°C ~ 180°C
DH60-18A
IXYS

DIODE GEN PURP 1.8KV 60A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 2.04V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 230ns
  • Current - Reverse Leakage @ Vr: 200µA @ 1800V
  • Capacitance @ Vr, F: 32pF @ 1200V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: TO-247-2
Lager12.702
1800V
60A
2.04V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
230ns
200µA @ 1800V
32pF @ 1200V, 1MHz
Through Hole
TO-247-2
TO-247AD
-55°C ~ 150°C
DSDI60-18A
IXYS

DIODE GEN PURP 1.8KV 63A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800V
  • Current - Average Rectified (Io): 63A
  • Voltage - Forward (Vf) (Max) @ If: 4.1V @ 70A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 300ns
  • Current - Reverse Leakage @ Vr: 2mA @ 1800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: TO-247-2
Lager6.752
1800V
63A
4.1V @ 70A
Fast Recovery =< 500ns, > 200mA (Io)
300ns
2mA @ 1800V
-
Through Hole
TO-247-2
TO-247AD
-40°C ~ 150°C
hot DH40-18A
IXYS

DIODE GEN PURP 1.8KV 40A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 2.7V @ 40A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: TO-247-2
Lager4.560
1800V
40A
2.7V @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
100µA @ 1800V
-
Through Hole
TO-247-2
TO-247AD
-40°C ~ 150°C
hot DSEI120-12A
IXYS

DIODE GEN PURP 1.2KV 75A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 75A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 70A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 3mA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: TO-247-2
Lager8.088
1200V
75A
1.8V @ 70A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
3mA @ 1200V
-
Through Hole
TO-247-2
TO-247AD
-40°C ~ 150°C
DSA2-16A
IXYS

DIODE AVALANCHE 1600V 3.6A AXIAL

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 3.6A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 7A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 1600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -40°C ~ 180°C
Paket: Axial
Lager29.574
1600V
3.6A
1.25V @ 7A
Standard Recovery >500ns, > 200mA (Io)
-
2mA @ 1600V
-
Through Hole
Axial
Axial
-40°C ~ 180°C
hot DSEI120-06A
IXYS

DIODE GEN PURP 600V 77A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 77A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 70A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 3mA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: TO-247-2
Lager14.352
600V
77A
1.3V @ 70A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
3mA @ 600V
-
Through Hole
TO-247-2
TO-247AD
-40°C ~ 150°C
hot DSEI60-12A
IXYS

DIODE GEN PURP 1.2KV 52A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 52A
  • Voltage - Forward (Vf) (Max) @ If: 2.55V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 2.2mA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: TO-247-2
Lager15.132
1200V
52A
2.55V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
2.2mA @ 1200V
-
Through Hole
TO-247-2
TO-247AD
-40°C ~ 150°C
hot DSEI60-02A
IXYS

DIODE GEN PURP 200V 69A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 69A
  • Voltage - Forward (Vf) (Max) @ If: 1.08V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 50µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: TO-247-2
Lager3.408
200V
69A
1.08V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
50µA @ 200V
-
Through Hole
TO-247-2
TO-247AD
-40°C ~ 150°C
hot DSEP30-12A
IXYS

DIODE GEN PURP 1.2KV 30A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.74V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40ns
  • Current - Reverse Leakage @ Vr: 250µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: TO-247-2
Lager260.736
1200V
30A
2.74V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
250µA @ 1200V
-
Through Hole
TO-247-2
TO-247AD
-55°C ~ 175°C
hot DSI45-16A
IXYS

DIODE GEN PURP 1.6KV 45A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 45A
  • Voltage - Forward (Vf) (Max) @ If: 1.28V @ 45A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20µA @ 1600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -40°C ~ 175°C
Paket: TO-247-2
Lager4.816
1600V
45A
1.28V @ 45A
Standard Recovery >500ns, > 200mA (Io)
-
20µA @ 1600V
-
Through Hole
TO-247-2
TO-247AD
-40°C ~ 175°C
hot DSEI30-06A
IXYS

DIODE GEN PURP 600V 37A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 37A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 37A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: TO-247-2
Lager33.912
600V
37A
1.6V @ 37A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
100µA @ 600V
-
Through Hole
TO-247-2
TO-247AD
-40°C ~ 150°C
hot DSEI20-12A
IXYS

DIODE GEN PURP 1.2KV 17A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 17A
  • Voltage - Forward (Vf) (Max) @ If: 2.15V @ 12A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 750µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: TO-220-2
Lager14.460
1200V
17A
2.15V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
750µA @ 1200V
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 150°C
DNA30EM2200PZ
IXYS

DIODE GEN PURP 2.2KV 30A TO263

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.26V @ 30A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40µA @ 2200V
  • Capacitance @ Vr, F: 7pF @ 700V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2Pak)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lager29.568
2200V
30A
1.26V @ 30A
Standard Recovery >500ns, > 200mA (Io)
-
40µA @ 2200V
7pF @ 700V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
-55°C ~ 150°C
hot DSEI12-12A
IXYS

DIODE GEN PURP 1.2KV 11A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 11A
  • Voltage - Forward (Vf) (Max) @ If: 2.6V @ 12A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 70ns
  • Current - Reverse Leakage @ Vr: 250µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: TO-220-2
Lager33.984
1200V
11A
2.6V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
70ns
250µA @ 1200V
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 150°C
hot DSS6-015AS
IXYS

DIODE SCHOTTKY 150V 6A TO252AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 780mV @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager6.416
150V
6A
780mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 150V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
DMA10P1600UZ-TUB
IXYS

DIODE GEN PURP 1.6KV 10A TO252AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
  • Capacitance @ Vr, F: 1pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: -
Request a Quote
1600 V
10A
1.55 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 1600 V
1pF @ 400V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
DMA10P1600UZ-TRL
IXYS

DIODE GEN PURP 1.6KV 10A TO252AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
  • Capacitance @ Vr, F: 1pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: -
Request a Quote
1600 V
10A
1.55 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 1600 V
1pF @ 400V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
M0759YC120
IXYS

DIODE GEN PURP 1.2KV 759A W2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 759A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2 µs
  • Current - Reverse Leakage @ Vr: 50 mA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, A-PUK
  • Supplier Device Package: W2
  • Operating Temperature - Junction: -40°C ~ 125°C
Paket: -
Request a Quote
1200 V
759A
1.7 V @ 1500 A
Standard Recovery >500ns, > 200mA (Io)
2 µs
50 mA @ 1200 V
-
Clamp On
DO-200AB, A-PUK
W2
-40°C ~ 125°C
M0759YC160
IXYS

DIODE GEN PURP 1.6KV 759A W2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 759A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2 µs
  • Current - Reverse Leakage @ Vr: 50 mA @ 1600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, A-PUK
  • Supplier Device Package: W2
  • Operating Temperature - Junction: -40°C ~ 125°C
Paket: -
Request a Quote
1600 V
759A
1.7 V @ 1500 A
Standard Recovery >500ns, > 200mA (Io)
2 µs
50 mA @ 1600 V
-
Clamp On
DO-200AB, A-PUK
W2
-40°C ~ 125°C
DSEP29-12B
IXYS

DIODE GEN PURP 1.2KV 30A TO220-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 3.76 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 140 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
  • Capacitance @ Vr, F: 12pF @ 600V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: -
Request a Quote
1200 V
30A
3.76 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
140 ns
100 µA @ 1200 V
12pF @ 600V, 1MHz
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
M1022LC120
IXYS

DIODE GEN PURP 1.2KV 1022A W4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 1022A
  • Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 2050 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W4
  • Operating Temperature - Junction: -40°C ~ 125°C
Paket: -
Request a Quote
1200 V
1022A
1.85 V @ 2050 A
Standard Recovery >500ns, > 200mA (Io)
3 µs
100 mA @ 1200 V
-
Clamp On
DO-200AB, B-PUK
W4
-40°C ~ 125°C
M1022LC160
IXYS

DIODE GEN PURP 1.6KV 1022A W4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 1022A
  • Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 2050 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 1600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W4
  • Operating Temperature - Junction: -40°C ~ 125°C
Paket: -
Request a Quote
1600 V
1022A
1.85 V @ 2050 A
Standard Recovery >500ns, > 200mA (Io)
3 µs
100 mA @ 1600 V
-
Clamp On
DO-200AB, B-PUK
W4
-40°C ~ 125°C
DMA10P1800PZ-TUB
IXYS

DIODE GEN PURP 1.8KV 10A TO263HV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1800 V
  • Capacitance @ Vr, F: 4pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: -
Request a Quote
1800 V
10A
1.26 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1800 V
4pF @ 400V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
-55°C ~ 175°C
DMA10P1800PZ-TRL
IXYS

DIODE GEN PURP 1.8KV 10A TO263HV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1800 V
  • Capacitance @ Vr, F: 4pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: -
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1800 V
10A
1.26 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1800 V
4pF @ 400V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
-55°C ~ 175°C
DCG10P1200HR
IXYS

DIODE SCHOTT 1.2KV 12.5A ISO247

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 12.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
  • Capacitance @ Vr, F: 755pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: ISO247
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: -
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1200 V
12.5A
1.8 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
250 µA @ 1200 V
755pF @ 0V, 1MHz
Through Hole
TO-247-3
ISO247
-40°C ~ 150°C
DMA30P1200HB
IXYS

DIODE GEN PURP 1.2KV 30A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
  • Capacitance @ Vr, F: 11pF @ 400V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: -
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1200 V
30A
1.26 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
40 µA @ 1200 V
11pF @ 400V, 1MHz
Through Hole
TO-247-3
TO-247 (IXTH)
-55°C ~ 175°C
W3477MC400
IXYS

DIODE GEN PURP 4KV 3470A W54

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4000 V
  • Current - Average Rectified (Io): 3470A
  • Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 3000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 38 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 4000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: W54
  • Operating Temperature - Junction: -40°C ~ 160°C
Paket: -
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4000 V
3470A
1.34 V @ 3000 A
Standard Recovery >500ns, > 200mA (Io)
38 µs
100 mA @ 4000 V
-
Clamp On
DO-200AC, K-PUK
W54
-40°C ~ 160°C
W3477MC360
IXYS

DIODE GEN PURP 3.6KV 3470A W54

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3600 V
  • Current - Average Rectified (Io): 3470A
  • Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 3000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 38 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 3600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: W54
  • Operating Temperature - Junction: -40°C ~ 160°C
Paket: -
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3600 V
3470A
1.34 V @ 3000 A
Standard Recovery >500ns, > 200mA (Io)
38 µs
100 mA @ 3600 V
-
Clamp On
DO-200AC, K-PUK
W54
-40°C ~ 160°C
DPG60IM300PC-TUB
IXYS

DIODE GEN PURP 300V 60A TO263

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 60 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 300 V
  • Capacitance @ Vr, F: 80pF @ 150V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: -
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300 V
60A
1.43 V @ 60 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
1 µA @ 300 V
80pF @ 150V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
-55°C ~ 175°C