IXYS Produkte

IXGH28N60B

IXYS

IGBT 600V 40A 150W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 80A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 28A
• Power - Max: 150W
• Switching Energy: 2mJ (off)
• Input Type: Standard
• Gate Charge: 68nC
• Td (on/off) @ 25°C: 15ns/175ns
• Test Condition: 480V, 28A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

Paket: TO-247-3

IXSA20N60B2D1

IXYS

IGBT 600V 35A 190W TO263

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 35A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A
• Power - Max: 190W
• Switching Energy: 380µJ (off)
• Input Type: Standard
• Gate Charge: 33nC
• Td (on/off) @ 25°C: 30ns/116ns
• Test Condition: 480V, 16A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 30ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 AA (IXSA)

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXYH16N250CV1HV

IXYS

IGBT 2500V 35A TO247HV

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 2500V
• Current - Collector (Ic) (Max): 35A
• Current - Collector Pulsed (Icm): 126A
• Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 16A
• Power - Max: 500W
• Switching Energy: 4.75mJ (on), 3.9mJ (off)
• Input Type: Standard
• Gate Charge: 97nC
• Td (on/off) @ 25°C: 14ns/260ns
• Test Condition: 1250V, 16A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 19ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXYH)

Paket: TO-247-3

IXDR30N120

IXYS

IGBT 1200V 50A 200W ISOPLUS247

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 50A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 30A
• Power - Max: 200W
• Switching Energy: 4.6mJ (on), 3.4mJ (off)
• Input Type: Standard
• Gate Charge: 120nC
• Td (on/off) @ 25°C: -
• Test Condition: 600V, 30A, 47 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247?
• Supplier Device Package: ISOPLUS247?

Paket: ISOPLUS247?

IXBX50N360HV

IXYS

IGBT 3600V 125A 660W TO-247PLUS

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 3600V
• Current - Collector (Ic) (Max): 125A
• Current - Collector Pulsed (Icm): 420A
• Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 50A
• Power - Max: 660W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 210nC
• Td (on/off) @ 25°C: 46ns/205ns
• Test Condition: 960V, 50A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 1.7µs
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

Paket: TO-247-3

IXGH36N60B3C1

IXYS

IGBT 600V 75A 250W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
• Power - Max: 250W
• Switching Energy: 390µJ (on), 800µJ (off)
• Input Type: Standard
• Gate Charge: 80nC
• Td (on/off) @ 25°C: 20ns/125ns
• Test Condition: 400V, 30A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

Paket: TO-247-3

MDI550-12A4

IXYS

MOD IGBT BUCK 1200V 670A Y3-DCB

• IGBT Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 670A
• Power - Max: 2750W
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 400A
• Current - Collector Cutoff (Max): 21mA
• Input Capacitance (Cies) @ Vce: 26nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Y3-DCB
• Supplier Device Package: Y3-DCB

Paket: Y3-DCB

IXGN400N30A3

IXYS

IGBT 300V SOT-227B

• IGBT Type: PT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 300V
• Current - Collector (Ic) (Max): 400A
• Power - Max: 735W
• Vce(on) (Max) @ Vge, Ic: 1.15V @ 15V, 100A
• Current - Collector Cutoff (Max): 50µA
• Input Capacitance (Cies) @ Vce: 19nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227B

Paket: SOT-227-4, miniBLOC

IXFX90N20Q

IXYS

MOSFET N-CH 200V 90A PLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 500W (Tc)
• Rds On (Max) @ Id, Vgs: 22 mOhm @ 45A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS247?-3
• Package / Case: TO-247-3

Paket: TO-247-3

IXTH12N100

IXYS

MOSFET N-CH 1000V 12A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 (IXTH)
• Package / Case: TO-247-3

Paket: TO-247-3

IXFT50N30Q3

IXYS

MOSFET N-CH 300V 50A TO-268

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 300V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3165pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 690W (Tc)
• Rds On (Max) @ Id, Vgs: 80 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-268
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Paket: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFQ94N30P3

IXYS

MOSFET N-CH 300V 94A TO-3P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 300V
• Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5510pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1040W (Tc)
• Rds On (Max) @ Id, Vgs: 36 mOhm @ 47A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P
• Package / Case: TO-3P-3, SC-65-3

Paket: TO-3P-3, SC-65-3

IXFQ60N50P3

IXYS

MOSFET N-CH 500V 60A TO3P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1040W (Tc)
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P
• Package / Case: TO-3P-3, SC-65-3

Paket: TO-3P-3, SC-65-3

GWM180-004X2-SMDSAM

IXYS

MOSFET 6N-CH 40V 180A 17-SMD

• FET Type: 6 N-Channel (3-Phase Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 180A
• Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 100A, 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 17-SMD, Gull Wing
• Supplier Device Package: ISOPLUS-DIL?

Paket: 17-SMD, Gull Wing

VWO80-12IO7

IXYS

MODULE AC CTLR 3PH 1200V PWS-F

• Structure: 3-Phase Controller - All SCRs
• Number of SCRs, Diodes: 6 SCRs
• Voltage - Off State: 1200V
• Current - On State (It (AV)) (Max): 37A
• Current - On State (It (RMS)) (Max): 59A
• Voltage - Gate Trigger (Vgt) (Max): 1V
• Current - Gate Trigger (Igt) (Max): 100mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A, 1100A
• Current - Hold (Ih) (Max): 150mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module

Paket: Module

VHFD29-12IO1

IXYS

RECT BRIDGE 1PH 1200V V1A-PAK

• Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1)
• Number of SCRs, Diodes: 2 SCRs, 4 Diodes
• Voltage - Off State: 1200V
• Current - On State (It (AV)) (Max): 28A
• Current - On State (It (RMS)) (Max): -
• Voltage - Gate Trigger (Vgt) (Max): 1V
• Current - Gate Trigger (Igt) (Max): 65mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 330A
• Current - Hold (Ih) (Max): 100mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: V1A-PAK

Paket: V1A-PAK

DSP25-16AR

IXYS

DIODE ARRAY 1600V 28A ISOPLUS247

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io) (per Diode): 28A
• Voltage - Forward (Vf) (Max) @ If: 1.6V @ 55A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2mA @ 1600V
• Operating Temperature - Junction: -40°C ~ 180°C
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247?
• Supplier Device Package: ISOPLUS247?

Paket: ISOPLUS247?

DSEI2X121-02A

IXYS

DIODE MODULE 200V 123A SOT227B

• Diode Configuration: 2 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io) (per Diode): 123A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 120A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 1mA @ 200V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227B

Paket: SOT-227-4, miniBLOC

VUO34-14NO1

IXYS

RECT BRIDGE 3PH 36A 1400V V1-A

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1400V
• Current - Average Rectified (Io): 36A
• Voltage - Forward (Vf) (Max) @ If: 1.13V @ 50A
• Current - Reverse Leakage @ Vr: 20µA @ 1400V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: V1-A
• Supplier Device Package: V1-A

Paket: V1-A

VUO98-14NO7

IXYS

RECT BRIDGE 3PH 1400V ECO-PAC2

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1400V
• Current - Average Rectified (Io): 100A
• Voltage - Forward (Vf) (Max) @ If: 1.14V @ 40A
• Current - Reverse Leakage @ Vr: 100µA @ 1400V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ECO-PAC2
• Supplier Device Package: ECO-PAC2

Paket: ECO-PAC2

VUO86-12NO7

IXYS

RECT BRIDGE 3PH 1200V ECO-PAC1

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1200V
• Current - Average Rectified (Io): 86A
• Voltage - Forward (Vf) (Max) @ If: 1.14V @ 30A
• Current - Reverse Leakage @ Vr: 40µA @ 1200V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ECO-PAC1
• Supplier Device Package: ECO-PAC1

Paket: ECO-PAC1

IXDD509D1T/R

IXYS

IC GATE DRIVER 9A 6-DFN

• Driven Configuration: Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 4.5 V ~ 30 V
• Logic Voltage - VIL, VIH: 0.8V, 2.4V
• Current - Peak Output (Source, Sink): 9A, 9A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 25ns, 23ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-VDFN Exposed Pad
• Supplier Device Package: 6-DFN (4x5)

Paket: 6-VDFN Exposed Pad

IXDD514SIAT/R

IXYS

IC GATE DRIVER 14A 8-SOIC

• Driven Configuration: Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 4.5 V ~ 30 V
• Logic Voltage - VIL, VIH: 1V, 2.5V
• Current - Peak Output (Source, Sink): 14A, 14A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 25ns, 22ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

Paket: 8-SOIC (0.154", 3.90mm Width)

IX4R11M6

IXYS

IC DRVR HALF BRIDGE 4A 16-MLP

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 6V, 7V
• Current - Peak Output (Source, Sink): 4A, 4A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 650V
• Rise / Fall Time (Typ): 23ns, 22ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 16-VDFN Exposed Pad
• Supplier Device Package: 16-MLP (7x6)

Paket: 16-VDFN Exposed Pad

IXFJ26N50

IXYS

MOSFET N-CH 500V 14A TO247

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

Paket: -

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DCG20B650LB-TRR

IXYS

BIPOLAR MODULE-BRIDGE RECTIFIER

• Diode Type: Single Phase
• Technology: Silicon Carbide Schottky
• Voltage - Peak Reverse (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Current - Reverse Leakage @ Vr: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 9-PowerSMD
• Supplier Device Package: 9-SMPD-B

Paket: -

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IXFT12N50F

IXYS

MOSFET N-CH 12A TO268

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

Paket: -

Request a Quote

IXYN150N60B3

IXYS

IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 250 A
• Current - Collector Pulsed (Icm): 750 A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A
• Power - Max: 830 W
• Switching Energy: 4.2mJ (on), 2.6mJ (off)
• Input Type: Standard
• Gate Charge: 260 nC
• Td (on/off) @ 25°C: 27ns/167ns
• Test Condition: 400V, 75A, 2Ohm, 15V
• Reverse Recovery Time (trr): 88 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227B

Paket: -

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MMIX2F60N50P3

IXYS

MOSFET 2N-CH 500V 30A 24SMPD

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Rds On (Max) @ Id, Vgs: 110mOhm @ 30A, 10V
• Vgs(th) (Max) @ Id: 5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 25V
• Power - Max: 320W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 24-SMD Module, 9 Leads
• Supplier Device Package: 24-SMPD

Paket: -

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MIXG120W1200PTEH

IXYS

IGBT MODULE - SIXPACK E3-PACK-PF

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paket: -

Request a Quote