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IXYS Produkte

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IXSK50N60AU1
IXYS

IGBT 600V 75A 300W TO264AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
  • Power - Max: 300W
  • Switching Energy: 6mJ (off)
  • Input Type: Standard
  • Gate Charge: 190nC
  • Td (on/off) @ 25°C: 70ns/200ns
  • Test Condition: 480V, 50A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264AA(IXSK)
Paket: TO-264-3, TO-264AA
Lager4.640
IXGT30N60B2D1
IXYS

IGBT 600V 70A 190W TO268

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A
  • Power - Max: 190W
  • Switching Energy: 320µJ (off)
  • Input Type: Standard
  • Gate Charge: 66nC
  • Td (on/off) @ 25°C: 13ns/110ns
  • Test Condition: 400V, 24A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
Paket: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Lager6.640
IXBF50N360
IXYS

IGBT 3600V 70A 290W I4-PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 3600V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 420A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 50A
  • Power - Max: 290W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 210nC
  • Td (on/off) @ 25°C: 46ns/205ns
  • Test Condition: 960V, 50A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 1.7µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5 (3 leads)
  • Supplier Device Package: ISOPLUS i4-PAC?
Paket: i4-Pac?-5 (3 leads)
Lager4.864
IXTY55N075T
IXYS

MOSFET N-CH 75V 55A TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 27.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager5.344
IXTA200N075T
IXYS

MOSFET N-CH 75V 200A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 430W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXTA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lager7.824
IXFR40N90P
IXYS

MOSFET N-CH ISOPLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 230 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS247?
  • Package / Case: ISOPLUS247?
Paket: ISOPLUS247?
Lager3.552
IXFX12N90Q
IXYS

MOSFET N-CH 900V 12A PLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 900 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247?-3
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager5.120
IXUV170N075
IXYS

MOSFET N-CH 75V 170A PLUS220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 175A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS220
  • Package / Case: TO-220-3, Short Tab
Paket: TO-220-3, Short Tab
Lager7.280
IXTH16N50D2
IXYS

MOSFET N-CH 500V 16A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 199nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 695W (Tc)
  • Rds On (Max) @ Id, Vgs: 240 mOhm @ 8A, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager3.328
hot IXTH5N100A
IXYS

MOSFET N-CH 1000V 5A TO247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager5.104
IXFP26N50P3
IXYS

MOSFET N-CH 500V 26A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 230 mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager4.368
IXFX66N85X
IXYS

850V/66A ULTRA JUNCTION X-CLASS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 850V
  • Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247?-3
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager6.120
IXFH46N65X2
IXYS

MOSFET N-CH 650V 46A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4810pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 660W (Tc)
  • Rds On (Max) @ Id, Vgs: 76 mOhm @ 23A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager7.728
IXTA20N65X
IXYS

MOSFET N-CH 650V 20A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 320W (Tc)
  • Rds On (Max) @ Id, Vgs: 210 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXTA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lager7.024
IXTR16P60P
IXYS

MOSFET P-CH 600V 10A ISOPLUS247

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 790 mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS247?
  • Package / Case: ISOPLUS247?
Paket: ISOPLUS247?
Lager7.792
MCD225-18IO1
IXYS

MOD THYRISTOR/DIODE 1800V Y1-CU

  • Structure: Series Connection - SCR/Diode
  • Number of SCRs, Diodes: 1 SCR, 1 Diode
  • Voltage - Off State: 1800V
  • Current - On State (It (AV)) (Max): 221A
  • Current - On State (It (RMS)) (Max): 400A
  • Voltage - Gate Trigger (Vgt) (Max): 2V
  • Current - Gate Trigger (Igt) (Max): 150mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A, 8500A
  • Current - Hold (Ih) (Max): 150mA
  • Operating Temperature: -40°C ~ 140°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Y1-CU
Paket: Y1-CU
Lager5.040
VHFD37-12IO1
IXYS

RECT BRIDGE 1PH 1200V V1A-PAK

  • Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1)
  • Number of SCRs, Diodes: 2 SCRs, 4 Diodes
  • Voltage - Off State: 1200V
  • Current - On State (It (AV)) (Max): 36A
  • Current - On State (It (RMS)) (Max): -
  • Voltage - Gate Trigger (Vgt) (Max): 1V
  • Current - Gate Trigger (Igt) (Max): 65mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 320A, 350A
  • Current - Hold (Ih) (Max): 100mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: V1A-PAK
Paket: V1A-PAK
Lager3.008
DSEP40-03AS
IXYS

DIODE GEN PURP 300V 40A TO263

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.44V @ 40A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 1µA @ 300V
  • Capacitance @ Vr, F: 50pF @ 150V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2Pak)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lager13.464
DGSK20-025AS
IXYS

DIODE ARRAY SCHOTTKY 250V TO263

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 250V
  • Current - Average Rectified (Io) (per Diode): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.3mA @ 250V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lager5.504
hot DSEK60-02A
IXYS

DIODE ARRAY GP 200V 34A TO247AD

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io) (per Diode): 34A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 200µA @ 200V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-247AD
Paket: TO-3P-3 Full Pack
Lager126.936
VBO55-08NO7
IXYS

DIODE BRIDGE 800V 55A FO-T-A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 55A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
  • Current - Reverse Leakage @ Vr: 500µA @ 800V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: FO-T-A
  • Supplier Device Package: FO-T-A
Paket: FO-T-A
Lager3.424
VUO30-08NO3
IXYS

RECT BRIDGE 3PH 37A 800V FO-F-B

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 37A
  • Voltage - Forward (Vf) (Max) @ If: 2.55V @ 150A
  • Current - Reverse Leakage @ Vr: 300µA @ 800V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: FO-F-B
  • Supplier Device Package: FO-F-B
Paket: FO-F-B
Lager5.504
VUO27-12NO7
IXYS

RECT BRIDGE 3PH 28A 1200V SLIM

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 28A
  • Voltage - Forward (Vf) (Max) @ If: 1.12V @ 7A
  • Current - Reverse Leakage @ Vr: 300µA @ 1200V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Slim-PAC
  • Supplier Device Package: Slim-PAC
Paket: Slim-PAC
Lager3.520
IXJ611P1
IXYS

IC DRIVER HALF BRIDGE GATE 8DIP

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: -
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
Paket: 8-DIP (0.300", 7.62mm)
Lager2.832
IXF611S1T/R
IXYS

IC DRIVER MOSF/IGBT HALF 8-SOIC

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: -
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC
  • Supplier Device Package: 8-SOIC
Paket: 8-SOIC
Lager3.200
IXD611S7T/R
IXYS

IC DRVR HALF BRIDGE 600MA 14SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 35 V
  • Logic Voltage - VIL, VIH: 2.4V, 2.7V
  • Current - Peak Output (Source, Sink): 600mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 28ns, 18ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
Paket: 14-SOIC (0.154", 3.90mm Width)
Lager7.888
N1263JK160
IXYS

SCR 1.6KV 2504A WP1

  • Voltage - Off State: 1.6 kV
  • Voltage - Gate Trigger (Vgt) (Max): 3 V
  • Current - Gate Trigger (Igt) (Max): 300 mA
  • Voltage - On State (Vtm) (Max): 2.25 V
  • Current - On State (It (AV)) (Max): 1263 A
  • Current - On State (It (RMS)) (Max): 2504 A
  • Current - Hold (Ih) (Max): 1 A
  • Current - Off State (Max): 100 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
  • SCR Type: Standard Recovery
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: TO-200AB, B-PuK
  • Supplier Device Package: WP1
Paket: -
Request a Quote
K0900ME600
IXYS

SCR 6KV 1980A W78

  • Voltage - Off State: 6 kV
  • Voltage - Gate Trigger (Vgt) (Max): 3 V
  • Current - Gate Trigger (Igt) (Max): 300 mA
  • Voltage - On State (Vtm) (Max): 2.5 V
  • Current - On State (It (AV)) (Max): 1010 A
  • Current - On State (It (RMS)) (Max): 1980 A
  • Current - Hold (Ih) (Max): 1 A
  • Current - Off State (Max): 150 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 14000A @ 50Hz
  • SCR Type: Standard Recovery
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Clamp On
  • Package / Case: TO-200AC, K-PUK
  • Supplier Device Package: W78
Paket: -
Request a Quote
DSS6-015AS-TUB
IXYS

DIODE SCHOTTKY 150V 6A TO252AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 780 mV @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250 µA @ 150 V
  • Capacitance @ Vr, F: 82pF @ 24V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: -
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IXFH28N50F
IXYS

MOSFET N-CH 28A TO247

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paket: -
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