IXYS Produkte

IXGA12N120A2

IXYS

IGBT 1200V 24A 75W TO263

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 24A
• Current - Collector Pulsed (Icm): 48A
• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
• Power - Max: 75W
• Switching Energy: 5.4mJ (off)
• Input Type: Standard
• Gate Charge: 24nC
• Td (on/off) @ 25°C: 15ns/680ns
• Test Condition: 960V, 12A, 100 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (IXGA)

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXKP10N60C5M

IXYS

MOSFET N-CH 600V 5.4A TO220ABFP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 340µA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 100V
• Vgs (Max): ±20V
• FET Feature: Super Junction
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 385 mOhm @ 5.2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220ABFP
• Package / Case: TO-220-3 Full Pack, Isolated Tab

Paket: TO-220-3 Full Pack, Isolated Tab

IXTP160N085T

IXYS

MOSFET N-CH 85V 160A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 85V
• Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 164nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360W (Tc)
• Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

Paket: TO-220-3

FDM100-0045SP

IXYS

MOSFET N-CH 55V 100A I4-PAC-5

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ISOPLUS i4-PAC?
• Package / Case: i4-Pac?-5

Paket: i4-Pac?-5

IXFV30N50PS

IXYS

MOSFET N-CH 500V 30A PLUS220-SMD

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 460W (Tc)
• Rds On (Max) @ Id, Vgs: 200 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PLUS-220SMD
• Package / Case: PLUS-220SMD

Paket: PLUS-220SMD

IXTN120P20T

IXYS

MOSFET P-CH 200V 106A SOT-227

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 106A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 740nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 73000pF @ 25V
• Vgs (Max): ±15V
• FET Feature: -
• Power Dissipation (Max): 830W (Tc)
• Rds On (Max) @ Id, Vgs: 30 mOhm @ 60A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

Paket: SOT-227-4, miniBLOC

IXFH13N90

IXYS

MOSFET N-CH 900V 13A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 800 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AD (IXFH)
• Package / Case: TO-247-3

Paket: TO-247-3

IXFH12N100P

IXYS

MOSFET N-CH 1000V 12A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4080pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 463W (Tc)
• Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AD (IXFH)
• Package / Case: TO-247-3

Paket: TO-247-3

IXTH460P2

IXYS

MOSFET N-CH 500V 24A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 480W (Tc)
• Rds On (Max) @ Id, Vgs: 270 mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 (IXTH)
• Package / Case: TO-247-3

Paket: TO-247-3

IXTY01N80

IXYS

MOSFET N-CH 800V 0.1A TO-252AA

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 100mA (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 25W (Tc)
• Rds On (Max) @ Id, Vgs: 50 Ohm @ 100mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252AA
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

IXFN24N100F

IXYS

MOSFET N-CH 1KV 24A SOT227B

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 600W (Tc)
• Rds On (Max) @ Id, Vgs: 390 mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

Paket: SOT-227-4, miniBLOC

IXFR80N50Q3

IXYS

MOSFET N-CH 500V 50A ISOPLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 570W (Tc)
• Rds On (Max) @ Id, Vgs: 72 mOhm @ 40A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ISOPLUS247?
• Package / Case: TO-247-3

Paket: TO-247-3

VW2X30-16IO1

IXYS

MODULE AC CTLR 2X30A 1600V V1-A

• Structure: 2-Phase Controller - All SCRs
• Number of SCRs, Diodes: 4 SCRs
• Voltage - Off State: 1600V
• Current - On State (It (AV)) (Max): 14A
• Current - On State (It (RMS)) (Max): 22A
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 100mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 200A, 210A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module

Paket: Module

VCD105-14IO7

IXYS

MOD THYRISTOR 1400V 105A ECOPAC2

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1400V
• Current - On State (It (AV)) (Max): 105A
• Current - On State (It (RMS)) (Max): 180A
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ECO-PAC2

Paket: ECO-PAC2

MCC255-16IO1

IXYS

MOD THYRISTOR DUAL 1600V Y1-CU

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1600V
• Current - On State (It (AV)) (Max): 250A
• Current - On State (It (RMS)) (Max): 450A
• Voltage - Gate Trigger (Vgt) (Max): 2V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A, 9600A
• Current - Hold (Ih) (Max): 150mA
• Operating Temperature: -40°C ~ 140°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Y1-CU

Paket: Y1-CU

DPG30IM300PC

IXYS

DIODE GEN PURP 300V 30A TO263

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.35V @ 30A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1µA @ 300V
• Capacitance @ Vr, F: 42pF @ 150V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (D2Pak)
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

DSEC60-02A

IXYS

DIODE ARRAY GP 200V 30A TO247AD

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io) (per Diode): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: TO-247AD

Paket: TO-3P-3 Full Pack

VGF0136AB

IXYS

IC BREAKING RECTIFIER 2800V 1.5A

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Braking Rectifier
• Voltage - DC Reverse (Vr) (Max): 2800V
• Current - Average Rectified (Io) (per Diode): 1.5A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

Paket: Module

DPG20C200PN

IXYS

DIODE ARRAY GP 200V 10A TO220FP

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.27V @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 1µA @ 200V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: TO-220ABFP

Paket: TO-220-3 Full Pack, Isolated Tab

DSA30C45PB

IXYS

DIODE ARRAY SCHOTTKY 45V TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 750mV @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 300µA @ 45V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

Paket: TO-220-3

VUE130-12NO7

IXYS

DIODE BRIDGE FAST 1200V ECO-PAC2

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1200V
• Current - Average Rectified (Io): 130A
• Voltage - Forward (Vf) (Max) @ If: 2.04V @ 60A
• Current - Reverse Leakage @ Vr: 100µA @ 1200V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ECO-PAC2
• Supplier Device Package: ECO-PAC2

Paket: ECO-PAC2

IXMS150PSI

IXYS

IC REG CTRLR HALF-BRIDGE 24DIP

• Output Type: Transistor Driver
• Function: Step-Up/Step-Down
• Output Configuration: Positive
• Topology: Half-Bridge
• Number of Outputs: 2
• Output Phases: 2
• Voltage - Supply (Vcc/Vdd): 12V
• Frequency - Switching: 10kHz ~ 400kHz
• Duty Cycle (Max): 95%
• Synchronous Rectifier: No
• Clock Sync: No
• Serial Interfaces: -
• Control Features: Dead Time Control, Enable, Frequency Control
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 24-DIP (0.300", 7.62mm)
• Supplier Device Package: 24-DIP

Paket: 24-DIP (0.300", 7.62mm)

IXDD409CI

IXYS

IC MOSFET DRVR 9A LOSIDE TO220-5

• Driven Configuration: Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 4.5 V ~ 35 V
• Logic Voltage - VIL, VIH: 0.8V, 3.5V
• Current - Peak Output (Source, Sink): 9A, 9A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 10ns, 10ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-5
• Supplier Device Package: TO-220-5

Paket: TO-220-5

IXDD409YI

IXYS

IC HIGH CURR GATE DRVR 9A TO-263

• Driven Configuration: Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 4.5 V ~ 35 V
• Logic Voltage - VIL, VIH: 0.8V, 3.5V
• Current - Peak Output (Source, Sink): 9A, 9A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 10ns, 10ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
• Supplier Device Package: TO-263 (D2Pak)

Paket: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA

DFE25I600HA

IXYS

DIODE ARRAY GP 600V 25A TO247

• Diode Configuration: -
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io) (per Diode): 25A
• Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 25 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 100 µA @ 600 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247

Paket: -

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IXTA1R4N100PTRL

IXYS

MOSFET N-CH 1000V 1.4A TO263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000 V
• Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 63W (Tc)
• Rds On (Max) @ Id, Vgs: 11.8Ohm @ 700mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (D2PAK)
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Paket: -

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DMA200YA1600NA

IXYS

DIODE MOD GP 1600V 200A SOT227B

• Diode Configuration: 2 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600 V
• Current - Average Rectified (Io) (per Diode): 200A
• Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 70 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50 µA @ 1600 V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227B

Paket: -

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IXTQ32P20T

IXYS

MOSFET P-CH 200V 32A TO3P

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200 V
• Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
• Vgs (Max): ±15V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P
• Package / Case: TO-3P-3, SC-65-3

Paket: -

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