IXYS Produkte

IXSX50N60BU1

IXYS

IGBT 600V 75A 300W PLUS247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
• Power - Max: 300W
• Switching Energy: 3.3mJ (off)
• Input Type: Standard
• Gate Charge: 167nC
• Td (on/off) @ 25°C: 70ns/150ns
• Test Condition: 480V, 50A, 2.7 Ohm, 15V
• Reverse Recovery Time (trr): 50ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PLUS247?-3

Paket: TO-247-3

IXGT30N60C2

IXYS

IGBT 600V 70A 190W TO268

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 70A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
• Power - Max: 190W
• Switching Energy: 290µJ (off)
• Input Type: Standard
• Gate Charge: 70nC
• Td (on/off) @ 25°C: 13ns/70ns
• Test Condition: 400V, 24A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

Paket: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

MWI75-12E8

IXYS

MOD IGBT SIXPACK RBSOA 1200V E3

• IGBT Type: NPT
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 130A
• Power - Max: 500W
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 75A
• Current - Collector Cutoff (Max): 1.1mA
• Input Capacitance (Cies) @ Vce: 5.7nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: E3
• Supplier Device Package: E3

Paket: E3

MID145-12A3

IXYS

MOD IGBT RBSOA 1200V 160A Y4-M5

• IGBT Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 160A
• Power - Max: 700W
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
• Current - Collector Cutoff (Max): 6mA
• Input Capacitance (Cies) @ Vce: 6.5nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Y4-M5
• Supplier Device Package: Y4-M5

Paket: Y4-M5

IXTA180N085T7

IXYS

MOSFET N-CH 85V 180A TO-263-7

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 85V
• Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 430W (Tc)
• Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263-7 (IXTA..7)
• Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Paket: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

VMO60-05F

IXYS

MOSFET N-CH 500V 60A TO-240AA

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 60A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 24mA
• Gate Charge (Qg) (Max) @ Vgs: 405nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 12600pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 590W (Tc)
• Rds On (Max) @ Id, Vgs: 75 mOhm @ 500mA, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: TO-240AA
• Package / Case: TO-240AA

Paket: TO-240AA

IXTQ30N50L

IXYS

MOSFET N-CH 500V 30A TO-3P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 400W (Tc)
• Rds On (Max) @ Id, Vgs: 200 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P
• Package / Case: TO-3P-3, SC-65-3

Paket: TO-3P-3, SC-65-3

IXTT360N055T2

IXYS

MOSFET N-CH 55V 360A TO268

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 935W (Tc)
• Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-268
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Paket: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT30N50P

IXYS

MOSFET N-CH 500V 30A TO-268 D3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 460W (Tc)
• Rds On (Max) @ Id, Vgs: 200 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-268
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Paket: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTQ28N15P

IXYS

MOSFET N-CH TO-3P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P
• Package / Case: TO-3P-3, SC-65-3

Paket: TO-3P-3, SC-65-3

IXTH88N30P

IXYS

MOSFET N-CH 300V 88A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 300V
• Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 600W (Tc)
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 44A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 (IXTH)
• Package / Case: TO-247-3

Paket: TO-247-3

IXTP15N50L2

IXYS

MOSFET N-CH 500V 15A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4080pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 480 mOhm @ 7.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

Paket: TO-220-3

IXTA80N075L2

IXYS

MOSFET N-CH 75V 80A TO-263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 357W (Tc)
• Rds On (Max) @ Id, Vgs: 24 mOhm @ 40A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263AA
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

GWM120-0075P3-SMD SAM

IXYS

MOSFET 6N-CH 75V 118A ISOPLUS

• FET Type: 6 N-Channel (3-Phase Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 118A
• Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 60A, 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 17-SMD, Gull Wing
• Supplier Device Package: ISOPLUS-DIL?

Paket: 17-SMD, Gull Wing

MCC700-20IO1W

IXYS

SCR THY PHASE LEG 2000V WC-500

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 2000V
• Current - On State (It (AV)) (Max): 700A
• Current - On State (It (RMS)) (Max): 1331A
• Voltage - Gate Trigger (Vgt) (Max): -
• Current - Gate Trigger (Igt) (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): 18200 @ 50MHz
• Current - Hold (Ih) (Max): -
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: WC-500

Paket: WC-500

MCC312-18IO1

IXYS

MOD THYRISTOR DUAL 1800V Y1-CU

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1800V
• Current - On State (It (AV)) (Max): 320A
• Current - On State (It (RMS)) (Max): 520A
• Voltage - Gate Trigger (Vgt) (Max): 2V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 10100A
• Current - Hold (Ih) (Max): 150mA
• Operating Temperature: -40°C ~ 140°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Y1-CU

Paket: Y1-CU

DLA10IM800UC

IXYS

DIODE GEN PURP 800V 10A TO252

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252, (D-Pak)
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

DSEI60-06A

IXYS

DIODE GEN PURP 600V 60A TO247AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 60A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 70A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 200µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247AD
• Operating Temperature - Junction: -40°C ~ 150°C

Paket: TO-247-2

MDD600-18N1

IXYS

DIODE MODULE 1.8KV 600A WC-500

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1800V
• Current - Average Rectified (Io) (per Diode): 600A
• Voltage - Forward (Vf) (Max) @ If: 880mV @ 500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 1800V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: WC-500
• Supplier Device Package: WC-500

Paket: WC-500

MDD950-20N1W

IXYS

DIODE MODULE 2KV 950A

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2000V
• Current - Average Rectified (Io) (per Diode): 950A
• Voltage - Forward (Vf) (Max) @ If: 880mV @ 500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 18µs
• Current - Reverse Leakage @ Vr: 50mA @ 2000V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

Paket: Module

DSA20C100PB

IXYS

DIODE ARRAY SCHOTTKY 100V TO220

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200nA @ 100V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

Paket: TO-220-3

MDD142-16N1

IXYS

DIODE MODULE 1.6KV 165A Y4-M6

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io) (per Diode): 165A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 300A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20mA @ 1600V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: Y4-M6
• Supplier Device Package: Y4-M6

Paket: Y4-M6

VUC25-12GO2

IXYS

DIODE BRIDGE FAST 1200V KAMM-MOD

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1200V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 2.2V @ 55A
• Current - Reverse Leakage @ Vr: 5mA @ 1200V
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: KAMM
• Supplier Device Package: KAMM

Paket: KAMM

VUE30-20NO1

IXYS

DIODE BRIDGE FAST 2000V V1-A

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 2000V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 5.41V @ 12A
• Current - Reverse Leakage @ Vr: 750µA @ 200V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: V1A-PAK
• Supplier Device Package: V1A-PAK

Paket: V1A-PAK

VBO36-14NO8

IXYS

RECT BRIDGE 30A 1400V FO-B

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1400V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A
• Current - Reverse Leakage @ Vr: 300µA @ 1400V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: QC Terminal
• Package / Case: 4-Square, FO-B
• Supplier Device Package: FO-B

Paket: 4-Square, FO-B

IXCP30M35A

IXYS

IC CURRENT REGULATOR TO220AB

• Function: Current Regulator
• Sensing Method: -
• Accuracy: -
• Voltage - Input: -
• Current - Output: 30mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

Paket: TO-220-3

IXTV270N055T2

IXYS

MOSFET N-CH PLUS220

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

Paket: -

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MCNA650P2200CA

IXYS

BIPOLAR MODULE - THYRISTOR COMP

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 2.2 kV
• Current - On State (It (AV)) (Max): 650 A
• Current - On State (It (RMS)) (Max): 1020 A
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 300 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A, 17300A
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 140°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ComPack

Paket: -

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DPG10IM300UC-TUB

IXYS

DIODE GEN PURP 300V 10A TO252AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 10 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 300 V
• Capacitance @ Vr, F: 15pF @ 150V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: -

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MDD600-14N1

IXYS

DIODE MODULE GP 1400V 883A

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1400 V
• Current - Average Rectified (Io) (per Diode): 883A
• Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1800 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 18 µs
• Current - Reverse Leakage @ Vr: 50 mA @ 1400 V
• Operating Temperature - Junction: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: -

Paket: -

Request a Quote