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Infineon Technologies Produkte - Transistoren - FETs, MOSFET - Einzeln

Aufzeichnungen 8.381
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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot IRF7811WGTRPBF
Infineon Technologies

MOSFET N-CH 30V 14A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2335pF @ 16V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager39.336
MOSFET (Metal Oxide)
30V
14A (Ta)
4.5V
1V @ 250µA
33nC @ 5V
2335pF @ 16V
±12V
-
3.1W (Ta)
12 mOhm @ 15A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot IRF7524D1GTRPBF
Infineon Technologies

MOSFET P-CH 20V 1.7A MICRO8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-uSMD
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Paket: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Lager111.348
MOSFET (Metal Oxide)
20V
1.7A (Ta)
2.7V, 4.5V
700mV @ 250µA
8.2nC @ 4.5V
240pF @ 15V
±12V
Schottky Diode (Isolated)
1.25W (Ta)
270 mOhm @ 1.2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-uSMD
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
hot IRF7424GTRPBF
Infineon Technologies

MOSFET P-CH 30V 11A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4030pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager206.868
MOSFET (Metal Oxide)
30V
11A (Ta)
4.5V, 10V
2.5V @ 250µA
110nC @ 10V
4030pF @ 25V
±20V
-
2.5W (Ta)
13.5 mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7413ZGTRPBF
Infineon Technologies

MOSFET N-CH 30V 13A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager5.920
MOSFET (Metal Oxide)
30V
13A (Ta)
4.5V, 10V
2.25V @ 25µA
14nC @ 4.5V
1210pF @ 15V
±20V
-
2.5W (Ta)
10 mOhm @ 13A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot IRF7413GTRPBF
Infineon Technologies

MOSFET N-CH 30V 13A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 79nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 7.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager94.800
MOSFET (Metal Oxide)
30V
13A (Ta)
4.5V, 10V
3V @ 250µA
79nC @ 10V
1800pF @ 25V
±20V
-
2.5W (Ta)
11 mOhm @ 7.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot IRF7406GTRPBF
Infineon Technologies

MOSFET P-CH 30V 6.7A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 2.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager141.936
MOSFET (Metal Oxide)
30V
5.8A (Ta)
4.5V, 10V
1V @ 250µA
59nC @ 10V
1100pF @ 25V
±20V
-
2.5W (Ta)
45 mOhm @ 2.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot IRF7220GTRPBF
Infineon Technologies

MOSFET P-CH 14V 11A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 14V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 125nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 8075pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 11A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager6.984
MOSFET (Metal Oxide)
14V
11A (Ta)
2.5V, 4.5V
600mV @ 250µA
125nC @ 5V
8075pF @ 10V
±12V
-
2.5W (Ta)
12 mOhm @ 11A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot IRF6798MTR1PBF
Infineon Technologies

MOSFET N-CH 25V 37A DIRECTFET-MX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 197A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 6560pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Body)
  • Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 37A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? MX
  • Package / Case: DirectFET? Isometric MX
Paket: DirectFET? Isometric MX
Lager16.800
MOSFET (Metal Oxide)
25V
37A (Ta), 197A (Tc)
4.5V, 10V
2.35V @ 150µA
75nC @ 4.5V
6560pF @ 13V
±20V
Schottky Diode (Body)
2.8W (Ta), 78W (Tc)
1.3 mOhm @ 37A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? MX
DirectFET? Isometric MX
IRF6711STR1PBF
Infineon Technologies

MOSFET N-CH 25V 19A DIRECTFET-SQ

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 84A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 19A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? SQ
  • Package / Case: DirectFET? Isometric SQ
Paket: DirectFET? Isometric SQ
Lager2.688
MOSFET (Metal Oxide)
25V
19A (Ta), 84A (Tc)
4.5V, 10V
2.35V @ 25µA
20nC @ 4.5V
1810pF @ 13V
±20V
-
2.2W (Ta), 42W (Tc)
3.8 mOhm @ 19A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? SQ
DirectFET? Isometric SQ
hot IRF6709S2TR1PBF
Infineon Technologies

MOSFET N-CH 25V 12A DIRECTFET-S1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 39A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 21W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET S1
  • Package / Case: DirectFET? Isometric S1
Paket: DirectFET? Isometric S1
Lager9.696
MOSFET (Metal Oxide)
25V
12A (Ta), 39A (Tc)
4.5V, 10V
2.35V @ 25µA
12nC @ 4.5V
1010pF @ 13V
±20V
-
1.8W (Ta), 21W (Tc)
7.8 mOhm @ 12A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DIRECTFET S1
DirectFET? Isometric S1
IRF1405ZSTRL7PP
Infineon Technologies

MOSFET N-CH 55V 150A D2PAK-7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5360pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 88A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Paket: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Lager6.608
MOSFET (Metal Oxide)
55V
120A (Tc)
10V
4V @ 150µA
230nC @ 10V
5360pF @ 25V
±20V
-
230W (Tc)
4.9 mOhm @ 88A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IRLU8729-701PBF
Infineon Technologies

MOSFET N-CH 30V 58A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Paket: TO-251-3 Short Leads, IPak, TO-251AA
Lager6.960
MOSFET (Metal Oxide)
30V
58A (Tc)
4.5V, 10V
2.35V @ 25µA
16nC @ 4.5V
1350pF @ 15V
±20V
-
55W (Tc)
8.9 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot IRLU8726PBF
Infineon Technologies

MOSFET N-CH 30V 86A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Paket: TO-251-3 Short Leads, IPak, TO-251AA
Lager253.524
MOSFET (Metal Oxide)
30V
86A (Tc)
4.5V, 10V
2.35V @ 50µA
23nC @ 4.5V
2150pF @ 15V
±20V
-
75W (Tc)
5.8 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot IRLB3036GPBF
Infineon Technologies

MOSFET N-CH 60V 195A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 11210pF @ 50V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 380W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 165A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager434.940
MOSFET (Metal Oxide)
60V
195A (Tc)
4.5V, 10V
2.5V @ 250µA
140nC @ 4.5V
11210pF @ 50V
±16V
-
380W (Tc)
2.4 mOhm @ 165A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot IRFSL4229PBF
Infineon Technologies

MOSFET N-CH 250V 45A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 330W (Tc)
  • Rds On (Max) @ Id, Vgs: 48 mOhm @ 26A, 10V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Paket: TO-262-3 Long Leads, I2Pak, TO-262AA
Lager33.000
MOSFET (Metal Oxide)
250V
45A (Tc)
10V
5V @ 250µA
110nC @ 10V
4560pF @ 25V
±30V
-
330W (Tc)
48 mOhm @ 26A, 10V
-40°C ~ 175°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I2Pak, TO-262AA
hot IRFB4310ZGPBF
Infineon Technologies

MOSFET N-CH 100V 120A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6860pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager45.360
MOSFET (Metal Oxide)
100V
120A (Tc)
10V
4V @ 150µA
170nC @ 10V
6860pF @ 50V
±20V
-
250W (Tc)
6 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot IRFB4310GPBF
Infineon Technologies

MOSFET N-CH 100V 130A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7670pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager103.464
MOSFET (Metal Oxide)
100V
130A (Tc)
10V
4V @ 250µA
250nC @ 10V
7670pF @ 50V
±20V
-
300W (Tc)
7 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot IRFB3077GPBF
Infineon Technologies

MOSFET N-CH 75V 120A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 370W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager7.968
MOSFET (Metal Oxide)
75V
120A (Tc)
10V
4V @ 250µA
220nC @ 10V
9400pF @ 50V
±20V
-
370W (Tc)
3.3 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot IRF9204PBF
Infineon Technologies

MOSFET P-CH 40V 74A TO-220AB

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7676pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 143W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 37A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager7.120
MOSFET (Metal Oxide)
40V
56A (Ta)
4.5V, 10V
3V @ 100µA
224nC @ 10V
7676pF @ 25V
±20V
-
143W (Tc)
16 mOhm @ 37A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IPD600N25N3GBTMA1
Infineon Technologies

MOSFET N-CH 250V 25A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager6.896
MOSFET (Metal Oxide)
250V
25A (Tc)
10V
4V @ 90µA
29nC @ 10V
2350pF @ 100V
±20V
-
136W (Tc)
60 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
IPD110N12N3GBUMA1
Infineon Technologies

MOSFET N-CH 120V 75A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 83µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4310pF @ 60V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager3.552
MOSFET (Metal Oxide)
120V
75A (Tc)
10V
4V @ 83µA
65nC @ 10V
4310pF @ 60V
±20V
-
136W (Tc)
11 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
IPB60R600CPATMA1
Infineon Technologies

MOSFET N-CH 600V 6.1A TO263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 220µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lager4.288
MOSFET (Metal Oxide)
600V
6.1A (Tc)
10V
3.5V @ 220µA
27nC @ 10V
550pF @ 100V
±20V
-
60W (Tc)
600 mOhm @ 3.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB034N06N3GATMA1
Infineon Technologies

MOSFET N-CH 60V 100A TO263-7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 93µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 167W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Paket: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Lager6.048
MOSFET (Metal Oxide)
60V
100A (Tc)
10V
4V @ 93µA
130nC @ 10V
11000pF @ 30V
±20V
-
167W (Tc)
3.4 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IPB021N06N3GATMA1
Infineon Technologies

MOSFET N-CH 60V 120A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 196µA
  • Gate Charge (Qg) (Max) @ Vgs: 275nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lager4.304
MOSFET (Metal Oxide)
60V
120A (Tc)
10V
4V @ 196µA
275nC @ 10V
23000pF @ 30V
±20V
-
250W (Tc)
2.1 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPD30N03S2L07GBTMA1
Infineon Technologies

MOSFET N-CH 30V 30A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 85µA
  • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager2.688
MOSFET (Metal Oxide)
30V
30A (Tc)
4.5V, 10V
2V @ 85µA
68nC @ 10V
2530pF @ 25V
±20V
-
136W (Tc)
6.7 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
IPS118N10N G
Infineon Technologies

MOSFET N-CH 100V 75A TO251-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 83µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4320pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.8 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO251-3
  • Package / Case: TO-251-3 Stub Leads, IPak
Paket: TO-251-3 Stub Leads, IPak
Lager6.320
MOSFET (Metal Oxide)
100V
75A (Tc)
10V
4V @ 83µA
65nC @ 10V
4320pF @ 50V
±20V
-
125W (Tc)
11.8 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO251-3
TO-251-3 Stub Leads, IPak
IPP90N06S4L04AKSA1
Infineon Technologies

MOSFET N-CH 60V 90A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager2.496
MOSFET (Metal Oxide)
60V
90A (Tc)
4.5V, 10V
2.2V @ 90µA
170nC @ 10V
13000pF @ 25V
±16V
-
150W (Tc)
3.7 mOhm @ 90A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IPP90N06S404AKSA1
Infineon Technologies

MOSFET N-CH 60V 90A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager3.296
MOSFET (Metal Oxide)
60V
90A (Tc)
10V
4V @ 90µA
128nC @ 10V
10400pF @ 25V
±20V
-
150W (Tc)
4 mOhm @ 90A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3