Infineon Technologies Produkte

IRGB4B60KD1PBF

Infineon Technologies

IGBT 600V 11A 63W TO220AB

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 11A
• Current - Collector Pulsed (Icm): 22A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
• Power - Max: 63W
• Switching Energy: 73µJ (on), 47µJ (off)
• Input Type: Standard
• Gate Charge: 12nC
• Td (on/off) @ 25°C: 22ns/100ns
• Test Condition: 400V, 4A, 100 Ohm, 15V
• Reverse Recovery Time (trr): 93ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

Paket: TO-220-3

IRF7811APBF

Infineon Technologies

MOSFET N-CH 28V 11A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 28V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1760pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

Paket: 8-SOIC (0.154", 3.90mm Width)

IRFU12N25DPBF

Infineon Technologies

MOSFET N-CH 250V 14A I-PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 144W (Tc)
• Rds On (Max) @ Id, Vgs: 260 mOhm @ 8.4A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: IPAK (TO-251)
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

Paket: TO-251-3 Short Leads, IPak, TO-251AA

IRFZ34E

Infineon Technologies

MOSFET N-CH 60V 28A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 68W (Tc)
• Rds On (Max) @ Id, Vgs: 42 mOhm @ 17A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

Paket: TO-220-3

AUIRLL024NTR

Infineon Technologies

MOSFET N-CH 55V 3.1A SOT-224

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223
• Package / Case: TO-261-4, TO-261AA

Paket: TO-261-4, TO-261AA

SPD09P06PL G

Infineon Technologies

MOSFET P-CH 60V 9.7A TO252-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 42W (Tc)
• Rds On (Max) @ Id, Vgs: 250 mOhm @ 6.8A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

BCR 189L3 E6327

Infineon Technologies

TRANS PREBIAS PNP 250MW TSLP-3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-101, SOT-883
• Supplier Device Package: PG-TSLP-3

Paket: SC-101, SOT-883

BAV 99T E6327

Infineon Technologies

DIODE ARRAY GP 80V 200MA SC75

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 150nA @ 70V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: PG-SC-75

Paket: SC-75, SOT-416

AUIPS6011R

Infineon Technologies

IC SW IPS 1CH HIGH SIDE DPAK-5

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 36V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 5.6A
• Rds On (Typ): 11 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
• Supplier Device Package: D-Pak

Paket: TO-252-5, DPak (4 Leads + Tab), TO-252AD

IRMCK312TR

Infineon Technologies

IC MOTOR CONTRLLR I2C/SPI 100QFP

• Motor Type - Stepper: -
• Motor Type - AC, DC: AC, Synchronous
• Function: Controller - Commutation, Direction Management
• Output Configuration: Pre-Driver - Half Bridge (6)
• Interface: I2C, RS-232, SPI
• Technology: Power MOSFET, IGBT
• Step Resolution: -
• Applications: Appliance
• Current - Output: -
• Voltage - Supply: 1.62 V ~ 1.98 V, 3 V ~ 3.6 V
• Voltage - Load: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-QFP (14x14)

Paket: 100-LQFP

TLE4729G

Infineon Technologies

IC MOTOR DRIVER PAR 24DSO

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: Parallel
• Technology: Bipolar
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 800mA
• Voltage - Supply: 5 V ~ 16 V
• Voltage - Load: 5 V ~ 16 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 24-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: P-DSO-24

Paket: 24-SOIC (0.295", 7.50mm Width)

AUIRS2332J

Infineon Technologies

IC DRVR BRIDGE 3-PHASE 44PLCC

• Driven Configuration: Half-Bridge
• Channel Type: 3-Phase
• Number of Drivers: 6
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.2V
• Current - Peak Output (Source, Sink): 250mA, 500mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 80ns, 40ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 44-LCC (J-Lead), 32 Leads
• Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)

Paket: 44-LCC (J-Lead), 32 Leads

TUA 6039

Infineon Technologies

IC TUNER MOPLL STAT 48-VQFN

• Type: Tuner
• Applications: NTSC, PAL
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-48-4

Paket: 48-VFQFN Exposed Pad

TLE8458GXUMA2

Infineon Technologies

IC LDO VREG/LIN TXRX 8DSO

• Type: Transceiver
• Protocol: LIN
• Number of Drivers/Receivers: 1/1
• Duplex: Full
• Receiver Hysteresis: -
• Data Rate: 20kbps
• Voltage - Supply: 7 V ~ 27 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

Paket: 8-SOIC (0.154", 3.90mm Width)

XE162HN40F80LAAKXUMA1

Infineon Technologies

IC MCU 16BIT 320KB FLASH 64LQFP

• Core Processor: C166SV2
• Core Size: 16-Bit
• Speed: 80MHz
• Connectivity: EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
• Peripherals: I2S, POR, PWM, WDT
• Number of I/O: 40
• Program Memory Size: 320KB (320K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 34K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 9x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 64-LQFP Exposed Pad
• Supplier Device Package: PG-LQFP-64-6

Paket: 64-LQFP Exposed Pad

SAF-TC1100-L150EB BB

Infineon Technologies

IC MCU 32BIT ROMLESS 208LBGA

• Core Processor: TriCore?
• Core Size: 32-Bit
• Speed: 150MHz
• Connectivity: EBI/EMI, FIFO, I2C, IrDA, SPI, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number of I/O: 72
• Program Memory Size: -
• Program Memory Type: ROMless
• EEPROM Size: -
• RAM Size: 144K x 8
• Voltage - Supply (Vcc/Vdd): 1.43 V ~ 1.58 V
• Data Converters: -
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 208-LBGA
• Supplier Device Package: P-LBGA-208-2

Paket: 208-LBGA

C167CSLMCAFXQLA2

Infineon Technologies

IC MCU 16BIT ROMLESS 144MQFP

• Core Processor: C166
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: CAN, EBI/EMI, SPI, UART/USART
• Peripherals: POR, PWM, WDT
• Number of I/O: 111
• Program Memory Size: -
• Program Memory Type: ROMless
• EEPROM Size: -
• RAM Size: 11K x 8
• Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 24x10b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 144-BQFP
• Supplier Device Package: PG-MQFP-144

Paket: 144-BQFP

XC2321D20F66VAAKXUMA1

Infineon Technologies

IC MCU 16BIT 320KB FLASH 48VQFN

• Core Processor: C166SV2
• Core Size: 16/32-Bit
• Speed: 66MHz
• Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, UART/USART
• Peripherals: DMA, I2S, POR, PWM, WDT
• Number of I/O: 33
• Program Memory Size: 160KB (160K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 12K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 10x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-48-54

Paket: 48-VFQFN Exposed Pad

TLE6228GPNT

Infineon Technologies

IC SW SMART QUAD LOWSIDE PDSO20

• Switch Type: -
• Number of Outputs: -
• Ratio - Input:Output: -
• Output Configuration: -
• Output Type: -
• Interface: -
• Voltage - Load: -
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): -
• Rds On (Typ): -
• Input Type: -
• Features: -
• Fault Protection: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

Paket: -

BSC160N15NS5SCATMA1

Infineon Technologies

TRENCH >=100V

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150 V
• Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
• Vgs(th) (Max) @ Id: 4.6V @ 60µA
• Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 75 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 96W (Tc)
• Rds On (Max) @ Id, Vgs: 16mOhm @ 28A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8-7
• Package / Case: 8-PowerTDFN

Paket: -

BSC010N04LSTATMA1

Infineon Technologies

MOSFET N-CH 40V 39A/100A TDSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 9520 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta), 167W (Tc)
• Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8 FL
• Package / Case: 8-PowerTDFN

Paket: -

AIKW50N65RF5XKSA1

Infineon Technologies

SIC_DISCRETE

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 150 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
• Power - Max: 250 W
• Switching Energy: 310µJ (on), 120µJ (off)
• Input Type: Standard
• Gate Charge: 109 nC
• Td (on/off) @ 25°C: 20ns/156ns
• Test Condition: 400V, 25A, 12Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

Paket: -

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CYT4BF8CEDQ0AEEGS

Infineon Technologies

IC MCU 32BT 8.1875MB FLSH 176QFP

• Core Processor: ARM® Cortex®-M0+/M4F
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 350MHz
• Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
• Number of I/O: 148
• Program Memory Size: 8.1875MB (8.1875M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 256 x 8
• RAM Size: 1M x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 99x12b SAR
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 176-LQFP Exposed Pad
• Supplier Device Package: 176-TEQFP (24x24)

Paket: -

T2200N16H100XPSA1

Infineon Technologies

STD THYR/DIODEN DISC

• Voltage - Off State: -
• Voltage - Gate Trigger (Vgt) (Max): -
• Current - Gate Trigger (Igt) (Max): -
• Voltage - On State (Vtm) (Max): -
• Current - On State (It (AV)) (Max): -
• Current - On State (It (RMS)) (Max): -
• Current - Hold (Ih) (Max): -
• Current - Off State (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): -
• SCR Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paket: -

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FF150R12KE3B8BOSA1

Infineon Technologies

MOD IGBT LOW PWR ECONO2-6

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paket: -

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BSC200P03LSG

Infineon Technologies

P-CHANNEL POWER MOSFET

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 12.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 1V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 48.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
• Rds On (Max) @ Id, Vgs: 20mOhm @ 12.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8-6
• Package / Case: 8-PowerTDFN

Paket: -

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BUZ32HXKSA1

Infineon Technologies

N-CHANNEL POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200 V
• Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 75W (Tc)
• Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3
• Package / Case: TO-220-3

Paket: -

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SIGC07T60SNCX1SA4

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 6 A
• Current - Collector Pulsed (Icm): 18 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 24ns/248ns
• Test Condition: 400V, 6A, 50Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

Paket: -

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IPA90R500C3XKSA1

Infineon Technologies

MOSFET N-CH 900V 11A TO220-FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900 V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 740µA
• Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 34W (Tc)
• Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-FP
• Package / Case: TO-220-3 Full Pack

Paket: -

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IPD70N10S3L12ATMA2

Infineon Technologies

MOSFET_(75V 120V(

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 83µA
• Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 11.5mOhm @ 70A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3-11
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Paket: -

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