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Infineon Technologies |
IGBT 600V 13A 60W TO220AB
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 13A
- Current - Collector Pulsed (Icm): 52A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
- Power - Max: 60W
- Switching Energy: 100µJ (on), 120µJ (off)
- Input Type: Standard
- Gate Charge: 27nC
- Td (on/off) @ 25°C: 21ns/86ns
- Test Condition: 480V, 6.5A, 50 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Paket: TO-220-3 |
Lager6.944 |
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Infineon Technologies |
IGBT CHIP WAFER
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 25A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 160nC
- Td (on/off) @ 25°C: 60ns/230ns
- Test Condition: 600V, 25A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Paket: Die |
Lager2.640 |
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Infineon Technologies |
IGBT 430V 20A 125W D2PAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 430V
- Current - Collector (Ic) (Max): 20A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.75V @ 5V, 14A
- Power - Max: 125W
- Switching Energy: -
- Input Type: Logic
- Gate Charge: 27nC
- Td (on/off) @ 25°C: 900ns/6µs
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager10.728 |
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Infineon Technologies |
MOSFET N-CH 40V 160A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 95A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager180.000 |
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Infineon Technologies |
MOSFET N-CH 200V 13A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 235 mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager4.960 |
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Infineon Technologies |
MOSFET N-CH 25V 12A TSDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 26W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-FL
- Package / Case: 8-PowerTDFN
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Paket: 8-PowerTDFN |
Lager327.732 |
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Infineon Technologies |
MOSFET N-CH 800V 11A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 220µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 500V
- Vgs (Max): ±20V
- FET Feature: Super Junction
- Power Dissipation (Max): 73W (Tc)
- Rds On (Max) @ Id, Vgs: 450 mOhm @ 4.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager25.338 |
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Infineon Technologies |
MOSFET N-CH 30V 44A 5X6 PQFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 30W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PQFN (5x6)
- Package / Case: 8-PowerTDFN
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Paket: 8-PowerTDFN |
Lager10.560 |
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Infineon Technologies |
DIODE SCHOTTKY 4V 110MA SOT-143
- Diode Type: Schottky - 2 Independent
- Voltage - Peak Reverse (Max): 4V
- Current - Max: 110mA
- Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
- Resistance @ If, F: -
- Power Dissipation (Max): 100mW
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: PG-SOT143-4
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Paket: TO-253-4, TO-253AA |
Lager3.280 |
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Infineon Technologies |
DIODE RF SW 50V 50MA SOD-323
- Diode Type: PIN - Single
- Voltage - Peak Reverse (Max): 50V
- Current - Max: 50mA
- Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
- Resistance @ If, F: 7 Ohm @ 10mA, 100MHz
- Power Dissipation (Max): -
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-76, SOD-323
- Supplier Device Package: PG-SOD323-2
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Paket: SC-76, SOD-323 |
Lager158.226 |
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Infineon Technologies |
DIODE SCHOTTKY 40V 200MA TSLP-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 40V
- Capacitance @ Vr, F: 12pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-882
- Supplier Device Package: PG-TSLP-2
- Operating Temperature - Junction: -55°C ~ 150°C
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Paket: SOD-882 |
Lager6.720 |
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Infineon Technologies |
IC GATE DVR UHVIC 1CH SOT23-5
- Applications: High-Voltage Start-Up
- Current - Supply: -
- Voltage - Supply: 0 V ~ 480 V
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SOT-23-5
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Paket: SC-74A, SOT-753 |
Lager4.800 |
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Infineon Technologies |
IC DVR CURRENT SENSE 1CH D2PAK-5
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 8 V ~ 50 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 10A
- Rds On (Typ): 6 mOhm
- Input Type: Non-Inverting
- Features: -
- Fault Protection: Current Limiting (Fixed), Over Temperature
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
- Supplier Device Package: D2PAK
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Paket: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB |
Lager15.156 |
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Infineon Technologies |
IC DRIVER HALF BRIDGE 8DIP
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.9V
- Current - Peak Output (Source, Sink): 200mA, 350mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 150ns, 50ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-DIP
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Paket: 8-DIP (0.300", 7.62mm) |
Lager12.132 |
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Infineon Technologies |
IC DRIVER BRIDGE 3-PHASE 44-PLCC
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 200mA, 350mA
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 125ns, 50ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 44-LCC (J-Lead), 32 Leads
- Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
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Paket: 44-LCC (J-Lead), 32 Leads |
Lager4.032 |
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Infineon Technologies |
IC DRIVER N-BRIDGE 24SSOP
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 4
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 7 V ~ 34 V
- Logic Voltage - VIL, VIH: 1V, 2V
- Current - Peak Output (Source, Sink): -
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): 55V
- Rise / Fall Time (Typ): 250ns, 200ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: PG-SSOP-24-4
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Paket: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad |
Lager25.524 |
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Infineon Technologies |
IC NETWORK TERMINATOR MQFP-64
- Function: Echo Cancellation
- Interface: IOM-2, ISDN
- Number of Circuits: 4
- Voltage - Supply: 3.3V
- Current - Supply: -
- Power (Watts): -
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 64-QFP
- Supplier Device Package: P-64-MQFP
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Paket: 64-QFP |
Lager4.096 |
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Infineon Technologies |
IC MCU 16BIT 1.56MB FLSH 144LQFP
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 100MHz
- Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
- Peripherals: I2S, POR, PWM, WDT
- Number of I/O: 118
- Program Memory Size: 1.56MB (1.56M x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 138K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 24x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 144-LQFP Exposed Pad
- Supplier Device Package: PG-LQFP-144-13
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Paket: 144-LQFP Exposed Pad |
Lager3.232 |
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Infineon Technologies |
IC MCU 32BIT 256KB FLASH 100LQFP
- Core Processor: ARM? Cortex?-M4
- Core Size: 32-Bit
- Speed: 144MHz
- Connectivity: CAN, Ethernet, I2C, LIN, MMC/SD, SPI, UART/USART, USB OTG, USIC
- Peripherals: DMA, I2S, LED, POR, Touch-Sense, WDT
- Number of I/O: 73
- Program Memory Size: 256KB (256K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 128K x 8
- Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
- Data Converters: A/D 16x12b, D/A 2x12b
- Oscillator Type: External
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 100-LQFP Exposed Pad
- Supplier Device Package: PG-LQFP-100-25
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Paket: 100-LQFP Exposed Pad |
Lager17.544 |
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Infineon Technologies |
SECURITY IC'S/AUTHENTICATION IC'
- Applications: Embedded Security Trusted Computing
- Core Processor: 16-Bit
- Program Memory Type: -
- Controller Series: -
- RAM Size: -
- Interface: LPC
- Number of I/O: 2
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Paket: - |
Lager5.616 |
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Infineon Technologies |
INFINEON
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Paket: - |
Request a Quote |
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Infineon Technologies |
TRAVEO-55NM
- Core Processor: ARM® Cortex®-R5F
- Core Size: 32-Bit
- Speed: 240MHz
- Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
- Peripherals: DMA, I2S, LCD, LVD, POR, PWM, WDT
- Number of I/O: 120
- Program Memory Size: 2.0625MB (2.0625M x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 2.25K x 8
- Voltage - Supply (Vcc/Vdd): 1.15V ~ 5.5V
- Data Converters: A/D 50x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 208-LQFP Exposed Pad
- Supplier Device Package: 208-TEQFP (28x28)
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Paket: - |
Request a Quote |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 85 V
- Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6690 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 167W (Tc)
- Rds On (Max) @ Id, Vgs: 6.4mOhm @ 95A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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Paket: - |
Request a Quote |
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Infineon Technologies |
SICOFI TWO CHANNEL CODEC FILTER
- Type: -
- Data Interface: -
- Resolution (Bits): -
- Number of ADCs / DACs: -
- Sigma Delta: -
- S/N Ratio, ADCs / DACs (db) Typ: -
- Dynamic Range, ADCs / DACs (db) Typ: -
- Voltage - Supply, Analog: -
- Voltage - Supply, Digital: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Paket: - |
Request a Quote |
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Infineon Technologies |
IC
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Paket: - |
Request a Quote |
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Infineon Technologies |
IC REG LIN 2.5V 400MA SOT223-4
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 40V
- Voltage - Output (Min/Fixed): 2.5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 2V @ 300mA
- Current - Output: 400mA
- Current - Quiescent (Iq): 220 µA
- Current - Supply (Max): 30 mA
- PSRR: 60dB (100Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
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Paket: - |
Lager12.000 |
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Infineon Technologies |
TRENCH <= 40V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 10315 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Paket: - |
Request a Quote |
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Infineon Technologies |
HIGH POWER THYR / DIO
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Paket: - |
Request a Quote |
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Infineon Technologies |
STD SPI
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 1Gbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 6.5 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -55°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-BGA (8x6)
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Paket: - |
Request a Quote |
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Infineon Technologies |
IGBT MODULE LOW PWR ECONO3-4
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Paket: - |
Request a Quote |
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