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Infineon Technologies |
IGBT 600V 140A 483W TO247AC
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 140A
- Current - Collector Pulsed (Icm): 225A
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
- Power - Max: 483W
- Switching Energy: 3.1mJ (on), 2.8mJ (off)
- Input Type: Standard
- Gate Charge: 140nC
- Td (on/off) @ 25°C: 85ns/222ns
- Test Condition: 400V, 75A, 10 Ohm, 15V
- Reverse Recovery Time (trr): 90ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
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Paket: TO-247-3 |
Lager4.928 |
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Infineon Technologies |
MOSFET P-CH 40V 6A 8-TSSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 62nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 5220pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSSOP
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
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Paket: 8-TSSOP (0.173", 4.40mm Width) |
Lager4.256 |
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Infineon Technologies |
MOSFET N-CH 30V 94A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2920pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 89W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager2.464 |
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Infineon Technologies |
MOSFET N-CH 30V 59A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.25V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 57W (Tc)
- Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 21A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager60.372 |
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Infineon Technologies |
MOSFET N-CH 650V 11A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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Paket: TO-220-3 |
Lager7.440 |
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Infineon Technologies |
MOSFET N-CH 75V 82A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3820pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 43A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Paket: TO-262-3 Long Leads, I2Pak, TO-262AA |
Lager6.704 |
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Infineon Technologies |
MOSFET N CH 30V 21A PQFN5X6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 83A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.4W (Ta), 54W (Tc)
- Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PQFN (5x6)
- Package / Case: 8-TQFN Exposed Pad
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Paket: 8-TQFN Exposed Pad |
Lager48.000 |
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Infineon Technologies |
MOSFET N-CH 55V 17A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager62.388 |
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Infineon Technologies |
MOSFET N-CH 150V 43A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Vgs(th) (Max) @ Id: 4V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7280pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 39W (Tc)
- Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 43A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3 Full Pack
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Paket: TO-220-3 Full Pack |
Lager390.000 |
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Infineon Technologies |
MOSFET N/P-CH 30V 8-SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager2.160 |
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Infineon Technologies |
TRANS PNP 300V 0.2A SOT-89
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
- Power - Max: 1W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PG-SOT89
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Paket: TO-243AA |
Lager2.272 |
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Infineon Technologies |
IC SW SMART OCTAL LOWSIDE PDSO36
- Switch Type: General Purpose
- Number of Outputs: 8
- Ratio - Input:Output: 1:8
- Output Configuration: Low Side
- Output Type: N-Channel
- Interface: SPI
- Voltage - Load: 4.5 V ~ 5.5 V
- Voltage - Supply (Vcc/Vdd): -
- Current - Output (Max): -
- Rds On (Typ): 800 mOhm
- Input Type: -
- Features: Status Flag
- Fault Protection: Open Load Detect, Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
- Supplier Device Package: P-DSO-36
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Paket: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad |
Lager867.504 |
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Infineon Technologies |
IC CNTL BALLAST 600V 0.5A 14SOIC
- Type: Ballast Controller
- Frequency: 36kHz ~ 44kHz
- Voltage - Supply: 10.5 V ~ 16.5 V
- Current - Supply: 10mA
- Current - Output Source/Sink: -
- Dimming: No
- Operating Temperature: -25°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 14-SOIC
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Paket: 14-SOIC (0.154", 3.90mm Width) |
Lager26.736 |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 16SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 3.5A, 3.5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 15ns, 15ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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Paket: 16-SOIC (0.154", 3.90mm Width) |
Lager2.832 |
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Infineon Technologies |
MOSFET DRIVER 40IQFN
- Output Configuration: Half Bridge
- Applications: Buck Converters
- Interface: PWM
- Load Type: Inductive
- Technology: DrMOS
- Rds On (Typ): -
- Current - Output / Channel: 50A
- Current - Peak Output: -
- Voltage - Supply: 4.5 V ~ 5.5 V
- Voltage - Load: 5 V ~ 16 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Features: Bootstrap Circuit
- Fault Protection: Shoot-Through, UVLO
- Mounting Type: Surface Mount
- Package / Case: 40-VFQFN Exposed Pad
- Supplier Device Package: PG-IQFN-40-1
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Paket: 40-VFQFN Exposed Pad |
Lager82.176 |
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Infineon Technologies |
IC SBC 48VQFN
- Applications: Automotive
- Interface: SPI
- Voltage - Supply: -
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: PG-VQFN-48-31
- Mounting Type: Surface Mount
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Paket: 48-VFQFN Exposed Pad |
Lager4.960 |
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Infineon Technologies |
IC MCU 16BIT ROMLESS 80MQFP
- Core Processor: C166
- Core Size: 16-Bit
- Speed: 20MHz
- Connectivity: EBI/EMI, SPI, UART/USART
- Peripherals: POR, PWM, WDT
- Number of I/O: 63
- Program Memory Size: -
- Program Memory Type: ROMless
- EEPROM Size: -
- RAM Size: 1K x 8
- Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
- Data Converters: -
- Oscillator Type: External
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 80-QFP
- Supplier Device Package: 80-MQFP (14x14)
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Paket: 80-QFP |
Lager4.400 |
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Infineon Technologies |
IC RELAY PHOTOVO 300V 150MA 8SMD
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 24 Ohm
- Load Current: 150mA
- Voltage - Input: 1.2VDC
- Voltage - Load: 0 ~ 300 V
- Mounting Type: Surface Mount
- Termination Style: Gull Wing
- Package / Case: 8-SMD (0.300", 7.62mm) 4 Leads
- Supplier Device Package: 8-SMT Modified
- Relay Type: Relay
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Paket: 8-SMD (0.300", 7.62mm) 4 Leads |
Lager13.368 |
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Infineon Technologies |
LINEAR VOLTAGE REGULATOR
- Output Configuration: Positive
- Output Type: Programmable
- Number of Regulators: 1
- Voltage - Input (Max): 40V
- Voltage - Output (Min/Fixed): 3.3V, 5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.48V @ 200mA, 0.4V @ 200mA
- Current - Output: 200mA
- Current - Quiescent (Iq): 25µA
- Current - Supply (Max): -
- PSRR: 60dB (100Hz), 63db (100Hz)
- Control Features: Enable
- Protection Features: Over Current, Over Temperature
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: PG-SSOP-14-5
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Paket: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad |
Lager5.088 |
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Infineon Technologies |
DIODE SCHOTTKY 650V 10A TO220-2
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Paket: - |
Request a Quote |
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Infineon Technologies |
DIODE SCHOTTKY 70V 70MA SCD80-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 70 V
- Current - Average Rectified (Io): 70mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 100 ps
- Current - Reverse Leakage @ Vr: 100 nA @ 50 V
- Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-80
- Supplier Device Package: PG-SCD80-2
- Operating Temperature - Junction: 150°C
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Paket: - |
Request a Quote |
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Infineon Technologies |
IC PSRAM 64MBIT SPI/OCTAL 24FBGA
- Memory Type: Volatile
- Memory Format: PSRAM
- Technology: PSRAM (Pseudo SRAM)
- Memory Size: 64Mbit
- Memory Interface: SPI - Octal I/O
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: 36ns
- Access Time: 36 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-VBGA
- Supplier Device Package: 24-FBGA (6x8)
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Paket: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 900V 15A TO247-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-21
- Package / Case: TO-247-3
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Paket: - |
Lager144 |
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Infineon Technologies |
IC CONTROLLER
- Output Type: -
- Function: -
- Output Configuration: -
- Topology: -
- Number of Outputs: -
- Output Phases: -
- Voltage - Supply (Vcc/Vdd): -
- Frequency - Switching: -
- Duty Cycle (Max): -
- Synchronous Rectifier: -
- Clock Sync: -
- Serial Interfaces: -
- Control Features: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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Paket: - |
Request a Quote |
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Infineon Technologies |
IGBT MODULE
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Paket: - |
Lager9 |
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Infineon Technologies |
IC SRAM MICROPOWER
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Paket: - |
Request a Quote |
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Infineon Technologies |
DIODE GP 80V 250MA SOT323-3-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80 V
- Current - Average Rectified (Io): 250mA
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 75 V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3-1
- Operating Temperature - Junction: 150°C
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Paket: - |
Request a Quote |
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Infineon Technologies |
SCR MODULE 2.2KV 250A MODULE
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 2.2 kV
- Current - On State (It (AV)) (Max): 159 A
- Current - On State (It (RMS)) (Max): 250 A
- Voltage - Gate Trigger (Vgt) (Max): 2 V
- Current - Gate Trigger (Igt) (Max): 150 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 4000A @ 50Hz
- Current - Hold (Ih) (Max): 200 mA
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
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Paket: - |
Request a Quote |
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Infineon Technologies |
MODULE IPM 3PHASE DIP23A
- Type: IGBT
- Configuration: 3 Phase Inverter
- Current: 4 A
- Voltage: 600 V
- Voltage - Isolation: 1900Vrms
- Package / Case: 23-DIP Module (0.573", 14.55mm)
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Paket: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 20V 3.7A SC59
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
- Vgs(th) (Max) @ Id: 750mV @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 2.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1447 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 23mOhm @ 3.7A, 2.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SC59-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Paket: - |
Lager381.432 |
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