Infineon Technologies Produkte

IRGP4650DPBF

Infineon Technologies

IGBT 600V 76A 268W TO247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 76A
• Current - Collector Pulsed (Icm): 105A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 35A
• Power - Max: 268W
• Switching Energy: 390µJ (on), 632µJ (off)
• Input Type: Standard
• Gate Charge: 104nC
• Td (on/off) @ 25°C: 46ns/105ns
• Test Condition: 400V, 35A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 120ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

Paket: TO-247-3

IPA80R650CEXKSA1

Infineon Technologies

MOSFET N-CH 800V TO-220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 470µA
• Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 33W (Tc)
• Rds On (Max) @ Id, Vgs: 650 mOhm @ 5.1A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220 Full Pack
• Package / Case: TO-220-3 Full Pack

Paket: TO-220-3 Full Pack

SN7002W L6327

Infineon Technologies

MOSFET N-CH 60V 230MA SOT-323

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 26µA
• Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 5 Ohm @ 230mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT323-3
• Package / Case: SC-70, SOT-323

Paket: SC-70, SOT-323

IRLZ34NL

Infineon Technologies

MOSFET N-CH 55V 30A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
• Rds On (Max) @ Id, Vgs: 35 mOhm @ 16A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

Paket: TO-262-3 Long Leads, I2Pak, TO-262AA

IRF7403TR

Infineon Technologies

MOSFET N-CH 30V 8.5A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

Paket: 8-SOIC (0.154", 3.90mm Width)

AUIRLS4030TRL

Infineon Technologies

MOSFET N-CH 100V 180A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 130nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 11360pF @ 50V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 370W (Tc)
• Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 110A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPB60R299CPAATMA1

Infineon Technologies

MOSFET N-CH TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 440µA
• Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 96W (Tc)
• Rds On (Max) @ Id, Vgs: 299 mOhm @ 6.6A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPB057N06NATMA1

Infineon Technologies

MOSFET N-CH 60V 17A TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 45A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 2.8V @ 36µA
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta), 83W (Tc)
• Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 45A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BSZ165N04NS G

Infineon Technologies

MOSFET N-CH 40V 31A TSDSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 31A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 10µA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
• Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TSDSON-8
• Package / Case: 8-PowerTDFN

Paket: 8-PowerTDFN

PTFA092201EV4R0XTMA1

Infineon Technologies

RF MOSFET LDMOS 30V H-36260-2

• Transistor Type: LDMOS
• Frequency: 920MHz ~ 960MHz
• Gain: 18.5dB
• Voltage - Test: 30V
• Current Rating: 10µA
• Noise Figure: -
• Current - Test: 1.85A
• Power - Output: 220W
• Voltage - Rated: 65V
• Package / Case: 2-Flatpack, Fin Leads, Flanged
• Supplier Device Package: H-36260-2

Paket: 2-Flatpack, Fin Leads, Flanged

BCR108WH6327XTSA1

Infineon Technologies

TRANS PREBIAS NPN 250MW SOT323-3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 170MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

Paket: SC-70, SOT-323

TLE4276GV85ATMA1

Infineon Technologies

IC REG LINEAR 8.5V 400MA TO220-5

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 40V
• Voltage - Output (Min/Fixed): 8.5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.5V @ 250mA
• Current - Output: 400mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 200µA ~ 25mA
• PSRR: 54dB (100Hz)
• Control Features: Inhibit
• Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
• Supplier Device Package: P-TO220-5-122

Paket: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA

IPS022GTR

Infineon Technologies

IC MOSFET LS DRIVER DUAL 8-SOIC

• Switch Type: General Purpose
• Number of Outputs: 2
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 35V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1A
• Rds On (Typ): 130 mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Current Limiting (Fixed), Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

Paket: 8-SOIC (0.154", 3.90mm Width)

PEF 22554 E V3.1-G

Infineon Technologies

IC COMPONENT QUADFALC 160-LBGA

• Function: Framer, Line Interface Unit (LIU)
• Interface: E1, J1, SCI, SPI, T1
• Number of Circuits: 4
• Voltage - Supply: 1.8V, 3.3V
• Current - Supply: -
• Power (Watts): 150mW
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 160-LBGA
• Supplier Device Package: PG-LBGA-160

Paket: 160-LBGA

XMC4500F100K1024ACXUMA1

Infineon Technologies

XMC4000

• Core Processor: ARM® Cortex®-M4
• Core Size: 32-Bit
• Speed: 120MHz
• Connectivity: CANbus, EBI/EMI, Ethernet, I²C, LINbus, SPI, UART, USB
• Peripherals: DMA, I²S, LED, POR, PWM, WDT
• Number of I/O: 55
• Program Memory Size: 1MB (1M x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 160K x 8
• Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
• Data Converters: A/D 24x12b; D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP Exposed Pad
• Supplier Device Package: PG-LQFP-100

Paket: 100-LQFP Exposed Pad

F3L200R07PE4BOSA1

Infineon Technologies

IGBT MOD 650V 200A 680W

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 200 A
• Power - Max: 680 W
• Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

Paket: -

IPW90R1K2C3FKSA1

Infineon Technologies

MOSFET N-CH 900V 5.1A TO247-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900 V
• Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 310µA
• Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 83W (Tc)
• Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-3-1
• Package / Case: TO-247-3

Paket: -

Request a Quote

IDWD150E65E7XKSA1

Infineon Technologies

INDUSTRY 14

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 200A
• Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 150 A
• Speed: Fast Recovery =< 500ns, > 5A (Io)
• Reverse Recovery Time (trr): 97 ns
• Current - Reverse Leakage @ Vr: 20 µA @ 650 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: PG-TO247-2-2
• Operating Temperature - Junction: -40°C ~ 175°C

Paket: -

BSB028N06NN3GXUMA2

Infineon Technologies

TRENCH 40<-<100V

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 102µA
• Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.2W (Ta), 78W (Tc)
• Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: MG-WDSON-5-3
• Package / Case: DirectFET™ Isometric MN

Paket: -

Request a Quote

S29GL128N90TFAR20

Infineon Technologies

IC FLASH 128MBIT PARALLEL 56TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 128Mbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 90ns
• Access Time: 90 ns
• Voltage - Supply: 3V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 56-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 56-TSOP

Paket: -

Request a Quote

CYT4BFBCHDQ0BZEGST

Infineon Technologies

IC MCU 32BT 8.1875MB FLSH 272BGA

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
• Core Size: 32-Bit Quad-Core
• Speed: 100MHz, 350MHz
• Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
• Number of I/O: 220
• Program Memory Size: 8.1875MB (8.1875M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 256 x 8
• RAM Size: 1M x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 114x12b SAR
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 272-LFBGA
• Supplier Device Package: 272-BGA (16x16)

Paket: -

Request a Quote

CG8382BFT

Infineon Technologies

IC MCU CAPSENSE PLUS 56QFN

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paket: -

Request a Quote

TLE9254VLCXUMA1

Infineon Technologies

IC TRANSCEIVER HALF 2/2 TSON-14

• Type: Transceiver
• Protocol: CANbus
• Number of Drivers/Receivers: 2/2
• Duplex: Half
• Receiver Hysteresis: 50 mV
• Data Rate: 5Mbps
• Voltage - Supply: 4.5V ~ 5.5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 14-TDFN Exposed Pad
• Supplier Device Package: PG-TSON-14-3

Paket: -

Request a Quote

T640N12TOFXPSA1

Infineon Technologies

SCR MODULE 1800V 1250A DO200AA

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 1.8 kV
• Current - On State (It (AV)) (Max): 644 A
• Current - On State (It (RMS)) (Max): 1250 A
• Voltage - Gate Trigger (Vgt) (Max): 2.2 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 9400A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Clamp On
• Package / Case: DO-200AA, A-PUK

Paket: -

Request a Quote

IM393L6FXKLA1

Infineon Technologies

POWER MODULE 600V 15A MDIP22

• Type: IGBT
• Configuration: 3 Phase Inverter
• Current: 15 A
• Voltage: 600 V
• Voltage - Isolation: 2000Vrms
• Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads

Paket: -

Request a Quote

IQE065N10NM5CGSCATMA1

Infineon Technologies

OPTIMOS LOWVOLTAGE POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 85A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.8V @ 48µA
• Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
• Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-WHTFN-9-1
• Package / Case: 9-PowerWDFN

Paket: -

Request a Quote

CY8C4124LQS-S413

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 24MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
• Number of I/O: 34
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 4K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10/12x12b SAR; D/A 2x7b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 40-UFQFN Exposed Pad
• Supplier Device Package: 40-QFN (6x6)

Paket: -

Request a Quote

CY9AF154MBBGL-GK9E1

Infineon Technologies

IC MCU 32BIT 288KB FLASH 96FBGA

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit Single-Core
• Speed: 40MHz
• Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number of I/O: 66
• Program Memory Size: 288KB (288K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 32K x 8
• Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
• Data Converters: A/D 17x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 96-LFBGA
• Supplier Device Package: 96-FBGA (6x6)

Paket: -

Request a Quote

CY8C4147AZE-S475

Infineon Technologies

IC MCU 32BIT 128KB FLASH 64TQFP

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit Single-Core
• Speed: 48MHz
• Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
• Number of I/O: 54
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 10/12b SAR; D/A 2x7b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (10x10)

Paket: -

IGD10N65T6ARMA1

Infineon Technologies

IGBT TRENCH FS 650V 23A TO252-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 23 A
• Current - Collector Pulsed (Icm): 42.5 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 8.5A
• Power - Max: 75 W
• Switching Energy: 200µJ (on), 70µJ (off)
• Input Type: Standard
• Gate Charge: 27 nC
• Td (on/off) @ 25°C: 30ns/106ns
• Test Condition: 400V, 8.5A, 47Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3

Paket: -