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Infineon Technologies |
IGBT 600V 59A 246W D2PAK
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 59A
- Current - Collector Pulsed (Icm): 72A
- Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 24A
- Power - Max: 246W
- Switching Energy: 532µJ (on), 311µJ (off)
- Input Type: Standard
- Gate Charge: 77nC
- Td (on/off) @ 25°C: 19ns/90ns
- Test Condition: 400V, 24A, 10 Ohm, 15V
- Reverse Recovery Time (trr): 102ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager4.512 |
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Infineon Technologies |
MOSFET N-CH 600V 21MA SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 8µA
- Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Paket: TO-236-3, SC-59, SOT-23-3 |
Lager4.128 |
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Infineon Technologies |
MOSFET N-CH 30V 80A TO262-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9750pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Paket: TO-262-3 Long Leads, I2Pak, TO-262AA |
Lager6.912 |
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Infineon Technologies |
MOSFET N-CH 100V 18A TDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 12µA
- Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 29W (Tc)
- Rds On (Max) @ Id, Vgs: 44 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
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Paket: 8-PowerTDFN |
Lager3.520 |
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Infineon Technologies |
MOSFET N-CH 600V TO220FP-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 960µA
- Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 34W (Tc)
- Rds On (Max) @ Id, Vgs: 125 mOhm @ 11.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-FP
- Package / Case: TO-220-3 Full Pack
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Paket: TO-220-3 Full Pack |
Lager2.416 |
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Infineon Technologies |
MOSFET N-CH 75V 75A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Paket: TO-220-3 |
Lager27.924 |
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Infineon Technologies |
RF MOSFET LDMOS 30V H-33288-6
- Transistor Type: LDMOS
- Frequency: 920MHz ~ 960MHz
- Gain: 17dB
- Voltage - Test: 30V
- Current Rating: 10µA
- Noise Figure: -
- Current - Test: 1.25A
- Power - Output: 150W
- Voltage - Rated: 65V
- Package / Case: 2-Flatpack, Fin Leads, Flanged
- Supplier Device Package: H-33288-6
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Paket: 2-Flatpack, Fin Leads, Flanged |
Lager7.808 |
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Infineon Technologies |
TRANS NPN 45V SOT323-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
- Power - Max: 500mW
- Frequency - Transition: 170MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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Paket: TO-236-3, SC-59, SOT-23-3 |
Lager6.400 |
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Infineon Technologies |
TRANS PREBIAS NPN 250MW TSLP-3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 140MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: PG-TSLP-3
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Paket: SC-101, SOT-883 |
Lager2.672 |
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Infineon Technologies |
IC REG LINEAR 5V 100MA 8DSO
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 100mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8
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Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager5.584 |
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Infineon Technologies |
IC POWER SUPPLY CONTROLLER 14DIP
- Applications: Power Supply Controller
- Voltage - Input: -
- Voltage - Supply: 8 V ~ 16 V
- Current - Supply: 5mA
- Operating Temperature: -25°C ~ 125°C
- Mounting Type: Through Hole
- Package / Case: 14-DIP (0.300", 7.62mm)
- Supplier Device Package: P-DIP-14
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Paket: 14-DIP (0.300", 7.62mm) |
Lager2.896 |
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Infineon Technologies |
IC MOTOR CTRL QFP100
- Motor Type - Stepper: -
- Motor Type - AC, DC: AC, Synchronous
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (6)
- Interface: I2C, RS-232
- Technology: Power MOSFET, IGBT
- Step Resolution: -
- Applications: -
- Current - Output: -
- Voltage - Supply: -
- Voltage - Load: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-LQFP (14x14)
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Paket: 100-LQFP |
Lager5.392 |
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Infineon Technologies |
IC MCU 16BIT 576KB FLASH 100LQFP
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 66MHz
- Connectivity: EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
- Peripherals: I2S, POR, PWM, WDT
- Number of I/O: 75
- Program Memory Size: 576KB (576K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 50K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 11x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 100-LQFP Exposed Pad
- Supplier Device Package: 100-LQFP (14x14)
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Paket: 100-LQFP Exposed Pad |
Lager3.120 |
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Infineon Technologies |
IC MCU 16BIT ROMLESS 100MQFP
- Core Processor: C166
- Core Size: 16-Bit
- Speed: 20MHz
- Connectivity: EBI/EMI, SPI, UART/USART
- Peripherals: POR, PWM, WDT
- Number of I/O: 77
- Program Memory Size: -
- Program Memory Type: ROMless
- EEPROM Size: -
- RAM Size: 2K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 3.6 V
- Data Converters: -
- Oscillator Type: External
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 100-BQFP
- Supplier Device Package: 100-MQFP (14x20)
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Paket: 100-BQFP |
Lager4.112 |
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Infineon Technologies |
IC MCU 16BIT 64KB FLASH 64TQFP
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 40MHz
- Connectivity: CAN, SPI, UART/USART
- Peripherals: PWM, WDT
- Number of I/O: 47
- Program Memory Size: 64KB (64K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 6K x 8
- Voltage - Supply (Vcc/Vdd): 2.35 V ~ 2.7 V
- Data Converters: A/D 14x8/10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Paket: - |
Lager6.400 |
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Infineon Technologies |
TVS DIODE 18.5VWM 17VC TSSLP2-1
- Type: Zener
- Unidirectional Channels: -
- Bidirectional Channels: 1
- Voltage - Reverse Standoff (Typ): 18.5V (Max)
- Voltage - Breakdown (Min): 20V
- Voltage - Clamping (Max) @ Ipp: 17V (Typ)
- Current - Peak Pulse (10/1000µs): 2A (8/20µs)
- Power - Peak Pulse: -
- Power Line Protection: No
- Applications: RF Antenna
- Capacitance @ Frequency: 0.3pF @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 2-XFDFN
- Supplier Device Package: TSSLP-2-1
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Paket: 2-XFDFN |
Lager8.244 |
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Infineon Technologies |
MAGNETIC SWITCH UNIPOLAR SOT23-3
- Function: Unipolar Switch
- Technology: Hall Effect
- Polarization: South Pole
- Sensing Range: 16.6mT Trip, 6.1mT Release
- Test Condition: 25°C
- Voltage - Supply: 3 V ~ 32 V
- Current - Supply (Max): 2.5mA
- Current - Output (Max): 25mA
- Output Type: Open Drain
- Features: Temperature Compensated
- Operating Temperature: -40°C ~ 170°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3-15
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Paket: TO-236-3, SC-59, SOT-23-3 |
Lager6.534 |
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Infineon Technologies |
IC REGULATOR PG-VQFN-48-901
- Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
- Voltage - Input: 3.3V
- Number of Outputs: 2
- Voltage - Output: -
- Operating Temperature: -20°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: 48-VQFN (7x7)
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Paket: 48-VFQFN Exposed Pad |
Lager6.352 |
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Infineon Technologies |
IC MCU 32BIT 128KB FLASH 40QFN
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 24MHz
- Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, TRNG, WDT
- Number of I/O: 34
- Program Memory Size: 128KB (128K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 40-UFQFN Exposed Pad
- Supplier Device Package: 40-QFN (6x6)
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Paket: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 60V 53A/454A HSOG-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 454A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 280µA
- Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
- Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOG-8-1
- Package / Case: 8-PowerSMD, Gull Wing
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Paket: - |
Lager10.728 |
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Infineon Technologies |
TRENCH 40<-<100V PG-TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 119A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
- Rds On (Max) @ Id, Vgs: 3.05mOhm @ 70A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-U05
- Package / Case: TO-220-3
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Paket: - |
Lager2.748 |
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Infineon Technologies |
DIODE SIL CARB 650V 13A HDSOP-10
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 13A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 14 µA @ 420 V
- Capacitance @ Vr, F: 205pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 10-PowerSOP Module
- Supplier Device Package: PG-HDSOP-10-1
- Operating Temperature - Junction: -55°C ~ 175°C
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Paket: - |
Lager14.805 |
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Infineon Technologies |
CY25245B-SPC
- Type: Frequency Generator
- PLL: Yes
- Input: Clock, Crystal
- Output: Clock
- Number of Circuits: 1
- Ratio - Input:Output: 1:1
- Differential - Input:Output: No/No
- Frequency - Max: 166MHz
- Divider/Multiplier: Yes/No
- Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-SSOP (0.209", 5.30mm Width)
- Supplier Device Package: 20-SSOP
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Paket: - |
Request a Quote |
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Infineon Technologies |
TYPE-C - AUTO
- Applications: USB Type C
- Core Processor: ARM® Cortex®-M0
- Program Memory Type: FLASH (128kB), ROM (32kB)
- Controller Series: EZ-PD™
- RAM Size: 16K x 8
- Interface: I2C, SPI, UART, USB
- Number of I/O: 19
- Voltage - Supply: 4V ~ 24V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 68-VFQFN Exposed Pad
- Supplier Device Package: 68-QFN (10x10)
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Paket: - |
Request a Quote |
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Infineon Technologies |
IC SCREEN CNTRL 32BIT 48QFN
- Touchscreen: 2 Wire Capacitive
- Resolution (Bits): 32 b
- Interface: I2C, SPI
- Voltage Reference: -
- Voltage - Supply: 1.71V ~ 5.5V
- Current - Supply: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 48-UFQFN Exposed Pad
- Supplier Device Package: 48-QFN (6x6)
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Paket: - |
Request a Quote |
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Infineon Technologies |
IGBT MOD 1700V 200A 960W
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 200 A
- Power - Max: 960 W
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A
- Current - Collector Cutoff (Max): 200 µA
- Input Capacitance (Cies) @ Vce: 7 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Paket: - |
Request a Quote |
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Infineon Technologies |
PSOC4 - GENERAL
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 24MHz
- Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
- Number of I/O: 24
- Program Memory Size: 16KB (16K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 2K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x10b; D/A 1x7/1x8b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-SSOP (0.209", 5.30mm Width)
- Supplier Device Package: 28-SSOP
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Paket: - |
Request a Quote |
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Infineon Technologies |
POWER FACTOR CONTROLLER, CURRENT
- Mode: Continuous Conduction (CCM)
- Frequency - Switching: 100kHz
- Current - Startup: 450 µA
- Voltage - Supply: 11V ~ 25V
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8-1
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Paket: - |
Request a Quote |
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