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Infineon Technologies |
MOSFET N-CH 100V 27A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 29µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 58W (Tc)
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 27A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
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Paket: TO-220-3 |
Lager12.252 |
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Infineon Technologies |
MOSFET N-CH 100V 27A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 29µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 58W (Tc)
- Rds On (Max) @ Id, Vgs: 34 mOhm @ 27A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager4.976 |
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Infineon Technologies |
MOSFET N-CH 60V 230MA SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Paket: TO-236-3, SC-59, SOT-23-3 |
Lager4.432 |
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Infineon Technologies |
MOSFET N-CH 20V 31A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.45V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 69nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 6290pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 89W (Tc)
- Rds On (Max) @ Id, Vgs: 2 mOhm @ 31A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? MT
- Package / Case: DirectFET? Isometric MT
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Paket: DirectFET? Isometric MT |
Lager25.560 |
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Infineon Technologies |
MOSFET N-CH 30V 140A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 4010pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager641.676 |
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Infineon Technologies |
MOSFET N-CH 30V 18A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 16V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta)
- Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager55.932 |
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Infineon Technologies |
MOSFET N-CH 30V 27A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 92A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 6590pF @ 15V
- Vgs (Max): +20V, -12V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 25A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? MT
- Package / Case: DirectFET? Isometric MT
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Paket: DirectFET? Isometric MT |
Lager150.372 |
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Infineon Technologies |
MOSFET N-CH 40V 195A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 380W (Tc)
- Rds On (Max) @ Id, Vgs: 1.75 mOhm @ 195A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Paket: TO-220-3 |
Lager17.664 |
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Infineon Technologies |
TRANS NPN 40V 0.6A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 330mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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Paket: TO-236-3, SC-59, SOT-23-3 |
Lager260.352 |
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Infineon Technologies |
DIODE VAR CAP 18V 50MA SOT-23
- Capacitance @ Vr, F: 47.5pF @ 2V, 1MHz
- Capacitance Ratio: 1.71
- Capacitance Ratio Condition: C2/C8
- Voltage - Peak Reverse (Max): 18V
- Diode Type: 1 Pair Common Cathode
- Q @ Vr, F: 200 @ 2V, 100 MHz
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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Paket: TO-236-3, SC-59, SOT-23-3 |
Lager144.000 |
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Infineon Technologies |
IC REG LINEAR 1.8V 800MA 8SOIC
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 7V
- Voltage - Output (Min/Fixed): 1.8V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 1.3V @ 1A
- Current - Output: 800mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: 70dB (120Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature
- Operating Temperature: 0°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager7.472 |
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Infineon Technologies |
IC HIGH SIDE SWITCH SOT-223
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 5 V ~ 34 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 700mA
- Rds On (Typ): 160 mOhm
- Input Type: Non-Inverting
- Features: -
- Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
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Paket: TO-261-4, TO-261AA |
Lager6.588 |
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Infineon Technologies |
IC MOTOR CONTROLLER
- Motor Type - Stepper: -
- Motor Type - AC, DC: -
- Function: -
- Output Configuration: -
- Interface: -
- Technology: -
- Step Resolution: -
- Applications: -
- Current - Output: -
- Voltage - Supply: -
- Voltage - Load: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Paket: - |
Lager7.248 |
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Infineon Technologies |
IC CTRLR LAN PCI-ETHER 128QFP
- Protocol: Ethernet
- Function: Controller
- Interface: PCI
- Standards: IEEE 802.3, 10/100 Base-T/TX PHY
- Voltage - Supply: 3 V ~ 3.6 V
- Current - Supply: 150mA
- Operating Temperature: 0°C ~ 70°C
- Package / Case: 128-BFQFP
- Supplier Device Package: PG-PQFP-128
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Paket: 128-BFQFP |
Lager7.424 |
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Infineon Technologies |
IC MCU 16BIT ROMLESS 128TQFP
- Core Processor: C166
- Core Size: 16-Bit
- Speed: 25MHz
- Connectivity: CAN, EBI/EMI, I2C, SPI, UART/USART
- Peripherals: POR, PWM, WDT
- Number of I/O: 93
- Program Memory Size: -
- Program Memory Type: ROMless
- EEPROM Size: -
- RAM Size: 10K x 8
- Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
- Data Converters: A/D 12x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 128-LQFP
- Supplier Device Package: 128-TQFP (20x20)
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Paket: 128-LQFP |
Lager6.160 |
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Infineon Technologies |
IC MCU 16BIT 1.5MB FLASH 144LQFP
- Core Processor: C166SV2
- Core Size: 16/32-Bit
- Speed: 100MHz
- Connectivity: CAN, EBI/EMI, FlexRay, I2C, LIN, SPI, UART/USART
- Peripherals: I2S, POR, PWM, WDT
- Number of I/O: 118
- Program Memory Size: 1.56MB (1.56M x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 138K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 24x10b
- Oscillator Type: External
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 144-LQFP Exposed Pad
- Supplier Device Package: PG-LQFP-144
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Paket: 144-LQFP Exposed Pad |
Lager3.152 |
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Infineon Technologies |
TXRX SINGLE MODE 155MBD 1X9
- Data Rate: 155Mbps
- Wavelength: 1300nm
- Applications: Ethernet
- Voltage - Supply: 4.75 V ~ 5.25 V
- Connector Type: SC
- Mounting Type: Through Hole
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Paket: - |
Lager4.212 |
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Infineon Technologies |
IC REGULATOR PG-VQFN-48-900
- Applications: -
- Voltage - Input: -
- Number of Outputs: -
- Voltage - Output: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Paket: - |
Lager4.336 |
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Infineon Technologies |
RF TRANSISTOR, X BAND, NPN
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 4.7V
- Frequency - Transition: 42GHz
- Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
- Gain: 27dB
- Power - Max: 160mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-4
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Paket: - |
Request a Quote |
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Infineon Technologies |
LOW POWER ECONO AG-ECONO2B-411
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 25 A
- Power - Max: 160 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONO2B
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Paket: - |
Lager45 |
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Infineon Technologies |
IC PSRAM 128MBIT HYPERBUS 24FBGA
- Memory Type: Volatile
- Memory Format: PSRAM
- Technology: PSRAM (Pseudo SRAM)
- Memory Size: 128Mbit
- Memory Interface: HyperBus
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: 35ns
- Access Time: 35 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-VBGA
- Supplier Device Package: 24-FBGA (6x8)
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Paket: - |
Request a Quote |
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Infineon Technologies |
IGBT MODULE
- IGBT Type: -
- Configuration: Single Switch
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): -
- Power - Max: 350 W
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 3.6kA, 15V
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-IHM190-2-1
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Paket: - |
Request a Quote |
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Infineon Technologies |
TYPE-C - OTHERS
- Applications: USB Type C
- Core Processor: ARM® Cortex®-M0
- Program Memory Type: FLASH (128kB)
- Controller Series: -
- RAM Size: 8K x 8
- Interface: I2C, SPI, UART/USART, USB
- Number of I/O: 25
- Voltage - Supply: 2.7V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 40-UFQFN Exposed Pad
- Supplier Device Package: 40-QFN (6x6)
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Paket: - |
Request a Quote |
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Infineon Technologies |
IC SRAM 18MBIT PARALLEL 165FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, DDR II
- Memory Size: 18Mbit
- Memory Interface: Parallel
- Clock Frequency: 333 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (13x15)
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Paket: - |
Lager603 |
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Infineon Technologies |
MOODULE
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1.2 kV
- Current - On State (It (AV)) (Max): 471 A
- Current - On State (It (RMS)) (Max): 800 A
- Voltage - Gate Trigger (Vgt) (Max): 1.5 V
- Current - Gate Trigger (Igt) (Max): 250 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
- Current - Hold (Ih) (Max): 300 mA
- Operating Temperature: 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
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Paket: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 40V 30A/100A TDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 85µA
- Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
- Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-1
- Package / Case: 8-PowerTDFN
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Paket: - |
Request a Quote |
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Infineon Technologies |
BTS132 - N-CHANNEL TEMPFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 75W
- Rds On (Max) @ Id, Vgs: 65mOhm @ 12A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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Paket: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BIT 4MB FLASH 100LQFP
- Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
- Core Size: 32-Bit Tri-Core
- Speed: 100MHz, 250MHz
- Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
- Number of I/O: 72
- Program Memory Size: 4.0625MB (4.0625M x 8)
- Program Memory Type: FLASH
- EEPROM Size: 256K x 8
- RAM Size: 768K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 37x12b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP Exposed Pad
- Supplier Device Package: 100-TEQFP (14x14)
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Paket: - |
Request a Quote |
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Infineon Technologies |
PP IHM I
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 600 A
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 37000 pF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Paket: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BIT 1MB FLASH 124VFBGA
- Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
- Core Size: 32-Bit Dual-Core
- Speed: 100MHz, 150MHz
- Connectivity: FIFO, I2C, IrDA, Microwire, SmartCard, SPI, SSP, UART/USART, USB
- Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I2S, LCD, LVD, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
- Number of I/O: 84
- Program Memory Size: 1MB (1M x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 288K x 8
- Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
- Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7b, 1x8/12b
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 124-VFBGA
- Supplier Device Package: 124-VFBGA (9x9)
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Paket: - |
Request a Quote |
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