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Infineon Technologies |
MOSFET N-CH 60V 120A PG-TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 120µA
- Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13150pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 167W (Tc)
- Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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Paket: TO-220-3 |
Lager4.720 |
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Infineon Technologies |
MOSFET N-CH 55V 16A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 58 mOhm @ 9.6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager35.940 |
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Infineon Technologies |
MOSFET N-CH 100V 17A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 9A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager4.960 |
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Infineon Technologies |
MOSFET P-CH 20V 4.3A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager392.904 |
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Infineon Technologies |
MOSFET N-CH 200V 2.5A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 170 mOhm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager6.752 |
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Infineon Technologies |
MOSFET N-CH 30V 87A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 79W (Tc)
- Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 21A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager26.592 |
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Infineon Technologies |
CONSUMER
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Paket: - |
Lager4.352 |
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Infineon Technologies |
MOSFET N-CH 150V 24A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 95 mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager390.372 |
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Infineon Technologies |
MOSFET N-CH 30V 80A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 45µA
- Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager17.886 |
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Infineon Technologies |
MOSFET N-CH 30V 65A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager481.644 |
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Infineon Technologies |
MOSFET N-CH 55V 160A D2PAK-7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7820pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 140A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (7-Lead)
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
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Paket: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Lager216.360 |
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Infineon Technologies |
TRANSISTOR NPN SOT89
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
- Power - Max: 2W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PG-SOT89
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Paket: TO-243AA |
Lager3.200 |
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Infineon Technologies |
TRANS NPN DARL 30V 0.5A SOT-23
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
- Power - Max: 360mW
- Frequency - Transition: 170MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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Paket: TO-236-3, SC-59, SOT-23-3 |
Lager180.000 |
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Infineon Technologies |
IC REG BUCK ADJ 3A SYNC 15QFN
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 5.5V
- Voltage - Input (Max): 21V
- Voltage - Output (Min/Fixed): 0.6V
- Voltage - Output (Max): 18.06V
- Current - Output: 3A
- Frequency - Switching: 300kHz ~ 1.5MHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 15-PowerVFQFN
- Supplier Device Package: PQFN (5x6)
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Paket: 15-PowerVFQFN |
Lager3.600 |
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Infineon Technologies |
IC MCU 32BIT 1MB FLASH 176LQFP
- Core Processor: TriCore?
- Core Size: 32-Bit
- Speed: 133MHz
- Connectivity: ASC, CAN, EBI/EMI, MLI, MSC, SSC
- Peripherals: DMA, POR, WDT
- Number of I/O: 88
- Program Memory Size: 1MB (1M x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 128K x 8
- Voltage - Supply (Vcc/Vdd): 1.42 V ~ 1.58 V
- Data Converters: A/D 32x12b
- Oscillator Type: External
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 176-LQFP
- Supplier Device Package: 176-LQFP (24x24)
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Paket: 176-LQFP |
Lager4.528 |
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Infineon Technologies |
IC HALL EFFECT SENSOR SSO-3
- Function: -
- Technology: -
- Polarization: -
- Sensing Range: -
- Test Condition: -
- Voltage - Supply: -
- Current - Supply (Max): -
- Current - Output (Max): -
- Output Type: -
- Features: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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Paket: - |
Lager2.430 |
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Infineon Technologies |
KIT SAMPLE FSK/ASK 433MHZ
- Type: Transmitter
- Frequency: 433MHz
- For Use With/Related Products: TDK5100
- Supplied Contents: Board
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Paket: - |
Lager6.894 |
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Infineon Technologies |
IC MCU 32BIT 44MQFP
- Core Processor: -
- Core Size: -
- Speed: -
- Connectivity: -
- Peripherals: -
- Number of I/O: -
- Program Memory Size: -
- Program Memory Type: -
- EEPROM Size: -
- RAM Size: -
- Voltage - Supply (Vcc/Vdd): -
- Data Converters: -
- Oscillator Type: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Paket: - |
Lager7.248 |
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Infineon Technologies |
IC MCU 80MQFP
- Core Processor: -
- Core Size: -
- Speed: -
- Connectivity: -
- Peripherals: -
- Number of I/O: -
- Program Memory Size: -
- Program Memory Type: -
- EEPROM Size: -
- RAM Size: -
- Voltage - Supply (Vcc/Vdd): -
- Data Converters: -
- Oscillator Type: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Paket: - |
Lager5.568 |
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Infineon Technologies |
IC MCU 32BT 2.0625MB FLSH 176QFP
- Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
- Core Size: 32-Bit Dual-Core
- Speed: 100MHz, 160MHz
- Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
- Number of I/O: 152
- Program Memory Size: 2.0625MB (2.0625M x 8)
- Program Memory Type: FLASH
- EEPROM Size: 128K x 8
- RAM Size: 256K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 82x12b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 176-LQFP
- Supplier Device Package: 176-LQFP (24x24)
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Paket: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BIT 64KB FLASH 32QFN
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 48MHz
- Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, Temp Sensor, WDT
- Number of I/O: 27
- Program Memory Size: 64KB (64K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 8K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-UFQFN Exposed Pad
- Supplier Device Package: 32-QFN (5x5)
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Paket: - |
Request a Quote |
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Infineon Technologies |
IC FLASH 256MBIT PARALLEL 64FBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 256Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 110ns
- Access Time: 110 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LBGA
- Supplier Device Package: 64-FBGA (13x11)
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Paket: - |
Request a Quote |
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Infineon Technologies |
OPTIGA TPM I2C
- Applications: Trusted Platform Module (TPM)
- Core Processor: 32-Bit
- Program Memory Type: NVM (51kB)
- Controller Series: OPTIGA™ TPM
- RAM Size: -
- Interface: I2C
- Number of I/O: 3
- Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-UFQFN Exposed Pad
- Supplier Device Package: PG-UQFN-32-1
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Paket: - |
Lager11.781 |
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Infineon Technologies |
PSOC4 - GENERAL
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 24MHz
- Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
- Number of I/O: 54
- Program Memory Size: 128KB (128K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16, 20x10/12b SAR
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LQFP
- Supplier Device Package: 64-TQFP (10x10)
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Paket: - |
Request a Quote |
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Infineon Technologies |
MOSFET P-CH 30V 9.2A 8-SO
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Paket: - |
Request a Quote |
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Infineon Technologies |
IGBT MODULE 1700V 1100A
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 1100 A
- Power - Max: 14500 W
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -25°C ~ 55°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Paket: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BIT 32KB FLASH 48TQFP
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit Single-Core
- Speed: 48MHz
- Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, LCD, LVD, POR, PWM, WDT
- Number of I/O: 36
- Program Memory Size: 32KB (32K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 2K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x10b; D/A 2x7b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-LQFP
- Supplier Device Package: 48-TQFP (7x7)
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Paket: - |
Request a Quote |
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Infineon Technologies |
OPTIREG LINEAR
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 40V
- Voltage - Output (Min/Fixed): 5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.95V @ 250mA
- Current - Output: 500mA
- Current - Quiescent (Iq): 8 µA
- Current - Supply (Max): 210 µA
- PSRR: 55dB (100Hz)
- Control Features: Current Limit
- Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3-11
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Paket: - |
Request a Quote |
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