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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
W632GG8AB-11
Winbond Electronics

IC SDRAM 2GBIT 78WBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 933MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 20ns
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager6.320
DRAM
SDRAM - DDR3
2Gb (128M x 16)
Parallel
933MHz
-
20ns
1.425 V ~ 1.575 V
0°C ~ 95°C (TC)
-
-
-
S70GL02GP11FAIR12
Cypress Semiconductor Corp

IC FLASH 2GBIT 110NS 64BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 2Gb (256M x 8, 128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 110ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (11x13)
Paket: 64-LBGA
Lager3.088
FLASH
FLASH - NOR
2Gb (256M x 8, 128M x 16)
Parallel
-
-
110ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-FBGA (11x13)
SST39VF800A-90-4I-B3KE
Microchip Technology

IC FLASH 8MBIT 90NS 48TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 8Mb (512K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20µs
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA
Paket: 48-TFBGA
Lager5.872
FLASH
FLASH
8Mb (512K x 16)
Parallel
-
20µs
70ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-TFBGA
hot MT48H16M32LFCM-6 L IT:B
Micron Technology Inc.

IC SDRAM 512MBIT 167MHZ 90VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 512Mb (16M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-VFBGA
  • Supplier Device Package: 90-VFBGA (10x13)
Paket: 90-VFBGA
Lager34.800
DRAM
SDRAM - Mobile LPSDR
512Mb (16M x 32)
Parallel
166MHz
15ns
5ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
90-VFBGA
90-VFBGA (10x13)
M28W320HSU70ZA6F TR
Micron Technology Inc.

IC FLASH 32MBIT 70NS 64TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mb (2M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-VFBGA
  • Supplier Device Package: 64-TFBGA (10.5x6.39)
Paket: 64-VFBGA
Lager6.656
FLASH
FLASH - NOR
32Mb (2M x 16)
Parallel
-
70ns
70ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-VFBGA
64-TFBGA (10.5x6.39)
71V35761S183BGG8
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 183MHZ 119BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 183MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.3ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 119-BGA
  • Supplier Device Package: 119-PBGA (14x22)
Paket: 119-BGA
Lager5.136
SRAM
SRAM - Synchronous
4.5Mb (128K x 36)
Parallel
183MHz
-
3.3ns
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
119-BGA
119-PBGA (14x22)
W25X32VZEIG T&R
Winbond Electronics

IC FLASH 32MBIT 75MHZ 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 32Mb (4M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 75MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (8x6)
Paket: 8-WDFN Exposed Pad
Lager3.728
FLASH
FLASH
32Mb (4M x 8)
SPI
75MHz
3ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (8x6)
IS61VPS51236A-250B3-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 18MBIT 250MHZ 165BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 18Mb (512K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 250MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 2.6ns
  • Voltage - Supply: 2.375 V ~ 2.625 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-FBGA
  • Supplier Device Package: 165-PBGA (13x15)
Paket: 165-FBGA
Lager2.608
SRAM
SRAM - Synchronous
18Mb (512K x 36)
Parallel
250MHz
-
2.6ns
2.375 V ~ 2.625 V
0°C ~ 70°C (TA)
Surface Mount
165-FBGA
165-PBGA (13x15)
MT46V32M16FN-75 L:C
Micron Technology Inc.

IC SDRAM 512MBIT 133MHZ 60FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 750ps
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-FBGA (10x12.5)
Paket: 60-TFBGA
Lager7.888
DRAM
SDRAM - DDR
512Mb (32M x 16)
Parallel
133MHz
15ns
750ps
2.3 V ~ 2.7 V
0°C ~ 70°C (TA)
Surface Mount
60-TFBGA
60-FBGA (10x12.5)
AT25010AY1-10YI-2.7
Microchip Technology

IC EEPROM 1KBIT 20MHZ 8MAP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (128 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 20MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UDFN Exposed Pad
  • Supplier Device Package: 8-MAP (3x4.9)
Paket: 8-UDFN Exposed Pad
Lager7.392
EEPROM
EEPROM
1Kb (128 x 8)
SPI
20MHz
5ms
-
2.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-UDFN Exposed Pad
8-MAP (3x4.9)
hot AT34C02N-10SC-2.7
Microchip Technology

IC EEPROM 2KBIT 400KHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 900ns
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager92.652
EEPROM
EEPROM
2Kb (256 x 8)
I2C
400kHz
10ms
900ns
2.7 V ~ 5.5 V
0°C ~ 70°C (TC)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot DS1220AB-120
Maxim Integrated

IC NVSRAM 16KBIT 120NS 24EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 120ns
  • Access Time: 120ns
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 24-DIP Module (0.600", 15.24mm)
  • Supplier Device Package: 24-EDIP
Paket: 24-DIP Module (0.600", 15.24mm)
Lager4.528
NVSRAM
NVSRAM (Non-Volatile SRAM)
16Kb (2K x 8)
Parallel
-
120ns
120ns
4.75 V ~ 5.25 V
0°C ~ 70°C (TA)
Through Hole
24-DIP Module (0.600", 15.24mm)
24-EDIP
MT29F16G08ADBCAH4:C TR
Micron Technology Inc.

IC FLASH 16GBIT 63VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 16Gb (2G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-VFBGA (9x11)
Paket: 63-VFBGA
Lager5.312
FLASH
FLASH - NAND
16Gb (2G x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
63-VFBGA
63-VFBGA (9x11)
TC58NVG0S3HBAI6
Toshiba Semiconductor and Storage

IC EEPROM 1GBIT 25NS 67FBGA

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 67-VFBGA
  • Supplier Device Package: 67-VFBGA (6.5x8)
Paket: 67-VFBGA
Lager6.304
EEPROM
EEPROM - NAND
1Gb (128M x 8)
Parallel
-
25ns
25ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
67-VFBGA
67-VFBGA (6.5x8)
IS42S16100H-6TL
ISSI, Integrated Silicon Solution Inc

IC SDRAM 16MBIT 166MHZ 50TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.5ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 50-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 50-TSOP II
Paket: 50-TSOP (0.400", 10.16mm Width)
Lager2.192
DRAM
SDRAM
16Mb (1M x 16)
Parallel
166MHz
-
5.5ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
50-TSOP (0.400", 10.16mm Width)
50-TSOP II
hot 24C02C-E/SN
Microchip Technology

IC EEPROM 2KBIT 400KHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 100kHz
  • Write Cycle Time - Word, Page: 1.5ms
  • Access Time: 3500ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager16.908
EEPROM
EEPROM
2Kb (256 x 8)
I2C
100kHz
1.5ms
3500ns
4.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot MT40A512M8RH-083E:B
Micron Technology Inc.

IC SDRAM 4GBIT 1.2GHZ 78BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 1.2GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-FBGA (9x10.5)
Paket: 78-TFBGA
Lager25.968
DRAM
SDRAM - DDR4
4Gb (512M x 8)
Parallel
1.2GHz
-
-
1.14 V ~ 1.26 V
0°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-FBGA (9x10.5)
BR93G86NUX-3TTR
Rohm Semiconductor

IC EEPROM 16KBIT 3MHZ 8VSON

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (2K x 8, 1K x 16)
  • Memory Interface: SPI
  • Clock Frequency: 3MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: VSON008X2030
Paket: 8-UFDFN Exposed Pad
Lager34.236
EEPROM
EEPROM
16Kb (2K x 8, 1K x 16)
SPI
3MHz
5ms
-
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-UFDFN Exposed Pad
VSON008X2030
SST39WF400B-70-4I-VA
Microchip Technology

IC FLASH 4M PARALLEL

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 40µs
  • Access Time: 70ns
  • Voltage - Supply: 1.65 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager2.352
FLASH
FLASH
4Mb (256K x 16)
Parallel
-
40µs
70ns
1.65 V ~ 1.95 V
-40°C ~ 85°C (TA)
-
-
-
hot S29GL256P11TAI010
Cypress Semiconductor Corp

IC FLASH 256M PARALLEL 56TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 110ns
  • Access Time: 110ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 56-TSOP
Paket: 56-TFSOP (0.724", 18.40mm Width)
Lager17.316
FLASH
FLASH - NOR
256Mb (32M x 8)
Parallel
-
110ns
110ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
56-TFSOP (0.724", 18.40mm Width)
56-TSOP
IS61NVF102418-6.5B3I-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 165TFBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 18Mb (1M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6.5ns
  • Voltage - Supply: 2.375 V ~ 2.625 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-TFBGA (13x15)
Paket: 165-TBGA
Lager4.560
SRAM
SRAM - Synchronous
18Mb (1M x 18)
Parallel
133MHz
-
6.5ns
2.375 V ~ 2.625 V
-40°C ~ 85°C (TA)
Surface Mount
165-TBGA
165-TFBGA (13x15)
MTFC4GACAAAM-1M WT TR
Micron Technology Inc.

IC FLASH 32GBIT 153VFBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager3.440
-
-
-
-
-
-
-
-
-
-
-
-
MTFC64GAPALBH-AIT TR
Micron Technology Inc.

IC FLASH 512G MMC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 512Gb (64G x 8)
  • Memory Interface: MMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager6.464
FLASH
FLASH - NAND
512Gb (64G x 8)
MMC
-
-
-
-
-40°C ~ 85°C (TA)
-
-
-
S70KS1283GABHI020
Infineon Technologies

IC PSRAM 128MBIT SPI/OCTL 24FBGA

  • Memory Type: Volatile
  • Memory Format: PSRAM
  • Technology: PSRAM (Pseudo SRAM)
  • Memory Size: 128Mbit
  • Memory Interface: SPI - Octal I/O
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35 ns
  • Voltage - Supply: 1.7V ~ 2V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-VBGA
  • Supplier Device Package: 24-FBGA (6x8)
Paket: -
Request a Quote
PSRAM
PSRAM (Pseudo SRAM)
128Mbit
SPI - Octal I/O
200 MHz
35ns
35 ns
1.7V ~ 2V
-40°C ~ 85°C (TA)
Surface Mount
24-VBGA
24-FBGA (6x8)
UPD44645182AF5-E33-FQ1-A
Renesas Electronics Corporation

STANDARD SRAM, 4MX18, 0.45NS

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
CY7C199-8VCT
Cypress Semiconductor Corp

IC SRAM 256KBIT PARALLEL 28SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 256Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 8ns
  • Access Time: 8 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-BSOJ (0.300", 7.62mm Width)
  • Supplier Device Package: 28-SOJ
Paket: -
Request a Quote
SRAM
SRAM - Asynchronous
256Kbit
Parallel
-
8ns
8 ns
4.5V ~ 5.5V
0°C ~ 70°C (TA)
Surface Mount
28-BSOJ (0.300", 7.62mm Width)
28-SOJ
IS45S32400J-6BLA2-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 128MBIT PAR 90TFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mbit
  • Memory Interface: LVTTL
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
Paket: -
Request a Quote
DRAM
SDRAM
128Mbit
LVTTL
166 MHz
-
5.4 ns
3V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
MX35UF1G14AC-Z4I
Macronix

MEMORY

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 1Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 600µs
  • Access Time: 8 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (8x6)
Paket: -
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FLASH
FLASH - NAND (SLC)
1Gbit
Parallel
104 MHz
600µs
8 ns
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (8x6)