Page 2107 - Speicher | Integrierte Schaltungen (ICs) | Heisener Electronics
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Speicher

Aufzeichnungen 62.144
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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IS42S32800D-75EB
ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 133MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 256Mb (8M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.5ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
Paket: 90-TFBGA
Lager5.120
DRAM
SDRAM
256Mb (8M x 32)
Parallel
133MHz
-
5.5ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
M25P16-VMF6PBA
Micron Technology Inc.

IC FLASH 16MBIT 75MHZ 16SO

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 16Mb (2M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 75MHz
  • Write Cycle Time - Word, Page: 15ms, 5ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SO W
Paket: 16-SOIC (0.295", 7.50mm Width)
Lager4.240
FLASH
FLASH - NOR
16Mb (2M x 8)
SPI
75MHz
15ms, 5ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SO W
MT47H64M8JN-25E IT:G
Micron Technology Inc.

IC SDRAM 512MBIT 400MHZ 60FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 400ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-FBGA (8x10)
Paket: 60-TFBGA
Lager5.056
DRAM
SDRAM - DDR2
512Mb (64M x 8)
Parallel
400MHz
15ns
400ps
1.7 V ~ 1.9 V
-40°C ~ 95°C (TC)
Surface Mount
60-TFBGA
60-FBGA (8x10)
IDT71V65802S150BG
IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 150MHZ 119BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 9Mb (512K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 150MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.8ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 119-BGA
  • Supplier Device Package: 119-PBGA (14x22)
Paket: 119-BGA
Lager5.408
SRAM
SRAM - Synchronous ZBT
9Mb (512K x 18)
Parallel
150MHz
-
3.8ns
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
119-BGA
119-PBGA (14x22)
IDT71V65703S85PF
IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 8.5NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 8.5ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
Paket: 100-LQFP
Lager2.416
SRAM
SRAM - Synchronous ZBT
9Mb (256K x 36)
Parallel
-
-
8.5ns
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
IS61LV12824-10B-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 3MBIT 10NS 119BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 3Mb (128K x 24)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 3.135 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 119-BGA
  • Supplier Device Package: 119-PBGA (14x22)
Paket: 119-BGA
Lager5.392
SRAM
SRAM - Asynchronous
3Mb (128K x 24)
Parallel
-
10ns
10ns
3.135 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
119-BGA
119-PBGA (14x22)
hot DS2506
Maxim Integrated

IC OTP 64KBIT 1WIRE TO92-3

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 64Kb (64K x 1)
  • Memory Interface: 1-Wire?
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 2µs
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 Long Body
Lager6.288
EPROM
EPROM - OTP
64Kb (64K x 1)
1-Wire?
-
-
2µs
-
-40°C ~ 85°C (TA)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92-3
IS43DR16320D-3DBI
ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 333MHZ 84BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 450ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 84-TFBGA
  • Supplier Device Package: 84-TWBGA (8x12.5)
Paket: 84-TFBGA
Lager7.072
DRAM
SDRAM - DDR2
512Mb (32M x 16)
Parallel
333MHz
15ns
450ps
1.7 V ~ 1.9 V
-40°C ~ 85°C (TA)
Surface Mount
84-TFBGA
84-TWBGA (8x12.5)
IS43R16320D-6BL-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 167MHZ 60BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 700ps
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-TFBGA (8x13)
Paket: 60-TFBGA
Lager7.152
DRAM
SDRAM - DDR
512Mb (32M x 16)
Parallel
166MHz
15ns
700ps
2.3 V ~ 2.7 V
0°C ~ 70°C (TA)
Surface Mount
60-TFBGA
60-TFBGA (8x13)
S29GL512T11FAIV10
Cypress Semiconductor Corp

NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 110ns
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager7.696
FLASH
FLASH - NOR
512Mb (64M x 8)
Parallel
-
60ns
110ns
1.65 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
EDB1316BDBH-1DIT-F-R TR
Micron Technology Inc.

IC SDRAM 1GBIT 533MHZ 134FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2
  • Memory Size: 1Gb (64M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 134-VFBGA
  • Supplier Device Package: 134-VFBGA (10x11.5)
Paket: 134-VFBGA
Lager2.416
DRAM
SDRAM - Mobile LPDDR2
1Gb (64M x 16)
Parallel
533MHz
-
-
1.14 V ~ 1.95 V
-40°C ~ 85°C (TC)
Surface Mount
134-VFBGA
134-VFBGA (10x11.5)
AT45DQ321-MWHFHJ-T
Adesto Technologies

IC FLASH 32MBIT 85MHZ 8VDFN

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 32Mb (512 Bytes x 8192 pages)
  • Memory Interface: SPI
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 8µs, 4ms
  • Access Time: -
  • Voltage - Supply: 2.3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-VDFN (6x8)
Paket: 8-VDFN Exposed Pad
Lager2.496
FLASH
FLASH
32Mb (512 Bytes x 8192 pages)
SPI
104MHz
8µs, 4ms
-
2.3 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
8-VDFN Exposed Pad
8-VDFN (6x8)
SST39LF200A-55-4C-B3KE-T
Microchip Technology

IC FLASH 2MBIT 55NS 48TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 2Mb (128K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20µs
  • Access Time: 55ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA
Paket: 48-TFBGA
Lager5.728
FLASH
FLASH
2Mb (128K x 16)
Parallel
-
20µs
55ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
48-TFBGA
48-TFBGA
24LC08BHT-E/OT
Microchip Technology

IC EEPROM 8KBIT 400KHZ SOT23-5

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 8Kb (256 x 8 x 4)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SOT-23-5
Paket: SC-74A, SOT-753
Lager7.456
EEPROM
EEPROM
8Kb (256 x 8 x 4)
I2C
400kHz
5ms
900ns
2.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
SC-74A, SOT-753
SOT-23-5
hot 24C00/P
Microchip Technology

IC EEPROM 128BIT 400KHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 128b (16 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 4ms
  • Access Time: 3500ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
Paket: 8-DIP (0.300", 7.62mm)
Lager64.800
EEPROM
EEPROM
128b (16 x 8)
I2C
400kHz
4ms
3500ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
AT45DB081E-SSHNHC-T
Adesto Technologies

IC FLASH 8MBIT 85MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 8Mb (264 Bytes x 4096 pages)
  • Memory Interface: SPI
  • Clock Frequency: 85MHz
  • Write Cycle Time - Word, Page: 8µs, 4ms
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager6.944
FLASH
FLASH
8Mb (264 Bytes x 4096 pages)
SPI
85MHz
8µs, 4ms
-
1.7 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
S29GL256P10TFI023
Cypress Semiconductor Corp

IC FLASH 256M PARALLEL 56TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 56-TSOP
Paket: 56-TFSOP (0.724", 18.40mm Width)
Lager2.304
FLASH
FLASH - NOR
256Mb (32M x 8)
Parallel
-
100ns
100ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
56-TFSOP (0.724", 18.40mm Width)
56-TSOP
S25FL116K0XMFB013
Cypress Semiconductor Corp

IC FLASH 16M SPI 108MHZ 8SO

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 16Mb (2M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
Paket: 8-SOIC (0.209", 5.30mm Width)
Lager3.872
FLASH
FLASH - NOR
16Mb (2M x 8)
SPI - Quad I/O
108MHz
3ms
-
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIC
AT28C256E-20DM/883-815
Microchip Technology

IC EEPROM 256K PARALLEL 28CDIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 200ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -55°C ~ 125°C (TC)
  • Mounting Type: Through Hole
  • Package / Case: 28-CDIP (0.600", 15.24mm)
  • Supplier Device Package: 28-CDIP
Paket: 28-CDIP (0.600", 15.24mm)
Lager4.672
EEPROM
EEPROM
256Kb (32K x 8)
Parallel
-
10ms
200ns
4.5 V ~ 5.5 V
-55°C ~ 125°C (TC)
Through Hole
28-CDIP (0.600", 15.24mm)
28-CDIP
MT52L4DAPQ-DC
Micron Technology Inc.

SPECIAL/CUSTOM LPDDR3

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager4.384
-
-
-
-
-
-
-
-
-
-
-
-
N24C32UVTG
onsemi

N24C32 - EEPROM, 32KX1, SERIAL,

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
MT58L128L36P1T-7-5IT
Micron Technology Inc.

IC SRAM 4MBIT PARALLEL 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Standard
  • Memory Size: 4Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 4 ns
  • Voltage - Supply: 3.135V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20.1)
Paket: -
Request a Quote
SRAM
SRAM - Standard
4Mbit
Parallel
133 MHz
-
4 ns
3.135V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20.1)
MTFC128GAXAQEA-WT-TR
Micron Technology Inc.

EMMC 1T

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 1Tbit
  • Memory Interface: eMMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -25°C ~ 85°C
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Request a Quote
FLASH
FLASH - NAND (SLC)
1Tbit
eMMC
-
-
-
-
-25°C ~ 85°C
-
-
-
MTFC128GASAONS-AAT-TR
Micron Technology Inc.

USSD 1T

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
AS4C32M16SB-7BCNTR
Alliance Memory, Inc.

IC DRAM 512MBIT PAR 54FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 512Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 143 MHz
  • Write Cycle Time - Word, Page: 14ns
  • Access Time: 6 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-FBGA (8x8)
Paket: -
Request a Quote
DRAM
SDRAM
512Mbit
Parallel
143 MHz
14ns
6 ns
3V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
54-TFBGA
54-FBGA (8x8)
MR1A16AVYS35R
Everspin Technologies Inc.

IC RAM 2MBIT PARALLEL 44TSOP2

  • Memory Type: Non-Volatile
  • Memory Format: RAM
  • Technology: MRAM (Magnetoresistive RAM)
  • Memory Size: 2Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP2
Paket: -
Request a Quote
RAM
MRAM (Magnetoresistive RAM)
2Mbit
Parallel
-
35ns
35 ns
3V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP2
IS43LQ32640AL-062BLI
ISSI, Integrated Silicon Solution Inc

2G, 0.57-0.65V/1.06-1.17/1.70-1.

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 2Gbit
  • Memory Interface: LVSTL
  • Clock Frequency: 1.6 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-WFBGA
  • Supplier Device Package: 200-VFBGA (10x14.5)
Paket: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4X
2Gbit
LVSTL
1.6 GHz
18ns
3.5 ns
1.06V ~ 1.17V, 1.7V ~ 1.95V
-40°C ~ 95°C (TC)
Surface Mount
200-WFBGA
200-VFBGA (10x14.5)
MR10Q010CSCR
Everspin Technologies Inc.

IC RAM 1MBIT SPI/QUAD 16SOIC

  • Memory Type: Non-Volatile
  • Memory Format: RAM
  • Technology: MRAM (Magnetoresistive RAM)
  • Memory Size: 1Mbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 40 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 7 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
Paket: -
Request a Quote
RAM
MRAM (Magnetoresistive RAM)
1Mbit
SPI - Quad I/O, QPI
40 MHz
-
7 ns
3V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC