Page 2117 - Speicher | Integrierte Schaltungen (ICs)

Teilenummer	Hersteller	Beschreibung	Paket	Lager	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
CY7C1320CV18-167BZC	Cypress Semiconductor Corp	IC SRAM 18MBIT 167MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, DDR II Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	Paket: 165-LBGA	Lager16.932	SRAM	SRAM - Synchronous, DDR II	18Mb (512K x 36)	Parallel	167MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
AT24C02N-10SC-1.8	Microchip Technology	IC EEPROM 2KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Paket: 8-SOIC (0.154", 3.90mm Width)	Lager9.540	EEPROM	EEPROM	2Kb (256 x 8)	I2C	400kHz	5ms	900ns	1.8 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
7008L15JG8	IDT, Integrated Device Technology Inc	IC SRAM 512KBIT 15NS 84PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 512Kb (64K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 84-LCC (J-Lead) Supplier Device Package: 84-PLCC (29.21x29.21)	Paket: 84-LCC (J-Lead)	Lager4.464	SRAM	SRAM - Dual Port, Asynchronous	512Kb (64K x 8)	Parallel	-	15ns	15ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	84-LCC (J-Lead)	84-PLCC (29.21x29.21)
W9864G2JB-6I TR	Winbond Electronics	IC SDRAM 64MBIT 166MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mb (2M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	Paket: 90-TFBGA	Lager3.600	DRAM	SDRAM	64Mb (2M x 32)	Parallel	166MHz	-	5ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
AT45DB041E-UUN2B-T	Adesto Technologies	IC FLASH 4MBIT 85MHZ 8WLCSP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (256 Bytes x 2048 pages) Memory Interface: SPI Clock Frequency: 85MHz Write Cycle Time - Word, Page: 8µs, 3ms Access Time: - Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-UFBGA, WLCSP Supplier Device Package: 8-WLCSP	Paket: 8-UFBGA, WLCSP	Lager3.824	FLASH	FLASH	4Mb (256 Bytes x 2048 pages)	SPI	85MHz	8µs, 3ms	-	1.65 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	8-UFBGA, WLCSP	8-WLCSP
LE25U40CQE-AH	ON Semiconductor	IC FLASH 4MBIT 40MHZ 8VSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (512K x 8) Memory Interface: SPI Clock Frequency: 40MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-VSON (5x6)	Paket: 8-WDFN Exposed Pad	Lager24.000	FLASH	FLASH	4Mb (512K x 8)	SPI	40MHz	5ms	-	2.3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-VSON (5x6)
24AA04-I/SNG	Microchip Technology	IC EEPROM 4KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (256 x 8 x 2) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Paket: 8-SOIC (0.154", 3.90mm Width)	Lager4.960	EEPROM	EEPROM	4Kb (256 x 8 x 2)	I2C	400kHz	5ms	900ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
25LC040-I/P	Microchip Technology	IC EEPROM 4KBIT 2MHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	Paket: 8-DIP (0.300", 7.62mm)	Lager7.452	EEPROM	EEPROM	4Kb (512 x 8)	SPI	2MHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
BR24T32-W	Rohm Semiconductor	IC EEPROM 32KBIT 400KHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 32Kb (4K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.6 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP-T	Paket: 8-DIP (0.300", 7.62mm)	Lager18.948	EEPROM	EEPROM	32Kb (4K x 8)	I2C	400kHz	5ms	-	1.6 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-DIP-T
AS7C1024B-12JCN	Alliance Memory, Inc.	IC SRAM 1MBIT 12NS 32SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 32-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 32-SOJ	Paket: 32-BSOJ (0.400", 10.16mm Width)	Lager6.588	SRAM	SRAM - Asynchronous	1Mb (128K x 8)	Parallel	-	12ns	12ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	32-BSOJ (0.400", 10.16mm Width)	32-SOJ
MT48LC64M8A2P-75IT:C	Alliance Memory, Inc.	IC SDRAM 512MBIT 133MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP	Paket: 54-TSOP (0.400", 10.16mm Width)	Lager17.712	DRAM	SDRAM	512Mb (64M x 8)	Parallel	133MHz	15ns	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP
M48Z08-100PC1	STMicroelectronics	IC NVSRAM 64KBIT 100NS 28DIP Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 100ns Access Time: 100ns Voltage - Supply: 4.75 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 28-DIP Module (0.600", 15.24mm) Supplier Device Package: 28-PCDIP, CAPHAT?	Paket: 28-DIP Module (0.600", 15.24mm)	Lager5.856	NVSRAM	NVSRAM (Non-Volatile SRAM)	64Kb (8K x 8)	Parallel	-	100ns	100ns	4.75 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	28-DIP Module (0.600", 15.24mm)	28-PCDIP, CAPHAT?
MT53D256M64D4NY-046 XT:B	Micron Technology Inc.	IC DRAM 16G 2133MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 16Gb (256M x 64) Memory Interface: - Clock Frequency: 2133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 105°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Lager4.640	DRAM	SDRAM - Mobile LPDDR4	16Gb (256M x 64)	-	2133MHz	-	-	1.1V	-30°C ~ 105°C (TC)	-	-	-
25AA1024-I/WF16K	Microchip Technology	IC EEPROM 1M SPI 20MHZ WAFER Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Mb (128K x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 6ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Paket: Die	Lager5.760	EEPROM	EEPROM	1Mb (128K x 8)	SPI	20MHz	6ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	Die	Die
MT51K128M32HF-60 N:B	Micron Technology Inc.	IC GDDR5 4G 128MX32 FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Lager5.520	-	-	-	-	-	-	-	-	-	-	-	-
MX25L51245GZ2I-10G	Macronix	IC FLASH SERIAL NOR 512M 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Memory Interface: SPI Clock Frequency: 166MHz Write Cycle Time - Word, Page: 60µs, 750µs Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (8x6)	Paket: 8-WDFN Exposed Pad	Lager22.092	FLASH	FLASH - NOR	512Mb (64M x 8)	SPI	166MHz	60µs, 750µs	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (8x6)
S29GL064S70FHI040	Cypress Semiconductor Corp	IC FLASH 64M PARALLEL 64FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (13x11)	Paket: 64-LBGA	Lager3.312	FLASH	FLASH - NOR	64Mb (4M x 16)	Parallel	-	60ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (13x11)
S25FL256LAGNFN011	Cypress Semiconductor Corp	IC NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x8)	Paket: 8-WDFN Exposed Pad	Lager3.280	FLASH	FLASH - NOR	256Mb (32M x 8)	SPI - Quad I/O, QPI	133MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 125°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
AT25PE16-SHF-T	Adesto Technologies	8-SOIC-W IND TEMP 2.3V Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 16M (4096 pages x 512 bytes) Memory Interface: SPI Clock Frequency: 85MHz Write Cycle Time - Word, Page: 8µs, 4ms Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	Paket: 8-SOIC (0.209", 5.30mm Width)	Lager5.184	FLASH	FLASH	16M (4096 pages x 512 bytes)	SPI	85MHz	8µs, 4ms	-	2.3 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
MT53D512M32D2DS-053 WT:D TR	Micron Technology Inc.	IC DRAM 16G 1866MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 16Gb (512M x 32) Memory Interface: - Clock Frequency: 1866MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Lager7.328	DRAM	SDRAM - Mobile LPDDR4	16Gb (512M x 32)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
IS62WVS1288GBLL-45NLI	ISSI, Integrated Silicon Solution Inc	1Mb, Serial SRAM, 2.7V-3.6V, 45M Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 1Mbit Memory Interface: SPI - Quad I/O, SDI Clock Frequency: 45 MHz Write Cycle Time - Word, Page: - Access Time: 15 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Paket: -	Request a Quote	SRAM	SRAM - Synchronous	1Mbit	SPI - Quad I/O, SDI	45 MHz	-	15 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
S29GL064N11TFVR43	Infineon Technologies	IC FLASH 64MBIT PARALLEL 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 110ns Access Time: 110 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	Paket: -	Request a Quote	FLASH	FLASH - NOR	64Mbit	Parallel	-	110ns	110 ns	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
W25Q256JWPIQ	Winbond Electronics	IC FLASH 256MBIT SPI/QUAD 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 5ms Access Time: 6 ns Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x5)	Paket: -	Request a Quote	FLASH	FLASH - NOR	256Mbit	SPI - Quad I/O	133 MHz	5ms	6 ns	1.7V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x5)
S99JL064J0020	Infineon Technologies	IC GATE NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT29F512G08EBLCEJ4-R-C	Micron Technology Inc.	IC FLASH 512GBIT PAR 132VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 512Gbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.6V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 132-VBGA Supplier Device Package: 132-VBGA (12x18)	Paket: -	Request a Quote	FLASH	FLASH - NAND (TLC)	512Gbit	Parallel	-	-	-	2.6V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	132-VBGA	132-VBGA (12x18)
GD55B01GEFIRR	GigaDevice Semiconductor (HK) Limited	1GBIT, 3.3V, SOP16 300MIL, INDUS Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 1Gbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOP	Paket: -	Lager2.727	FLASH	FLASH - NOR (SLC)	1Gbit	SPI - Quad I/O, QPI, DTR	133 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOP
W25Q20EWNB01	Winbond Electronics	IC FLASH 2MBIT SPI/QUAD 104MHZ Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 2Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 30µs, 800µs Access Time: 6 ns Voltage - Supply: 1.65V ~ 1.95V Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	FLASH	FLASH - NOR	2Mbit	SPI - Quad I/O	104 MHz	30µs, 800µs	6 ns	1.65V ~ 1.95V	-	-	-	-
W631GG8MB09J-TR	Winbond Electronics	IC DRAM 1GBIT SSTL 15 78VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 1Gbit Memory Interface: SSTL_15 Clock Frequency: 1.066 GHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 78-VFBGA Supplier Device Package: 78-VFBGA (8x10.5)	Paket: -	Request a Quote	DRAM	SDRAM - DDR3	1Gbit	SSTL_15	1.066 GHz	15ns	20 ns	1.425V ~ 1.575V	-40°C ~ 105°C (TC)	Surface Mount	78-VFBGA	78-VFBGA (8x10.5)

CY7C1320CV18-167BZC

Cypress Semiconductor Corp

IC SRAM 18MBIT 167MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

Paket: 165-LBGA

Lager16.932

SRAM

SRAM - Synchronous, DDR II

18Mb (512K x 36)

Parallel

167MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

AT24C02N-10SC-1.8

Microchip Technology

IC EEPROM 2KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

Paket: 8-SOIC (0.154", 3.90mm Width)

Lager9.540

EEPROM

2Kb (256 x 8)

I2C

400kHz

5ms

900ns

1.8 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

7008L15JG8

IDT, Integrated Device Technology Inc

IC SRAM 512KBIT 15NS 84PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 512Kb (64K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-LCC (J-Lead)
Supplier Device Package: 84-PLCC (29.21x29.21)

Paket: 84-LCC (J-Lead)

Lager4.464

SRAM

SRAM - Dual Port, Asynchronous

512Kb (64K x 8)

Parallel

-

15ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

84-LCC (J-Lead)

84-PLCC (29.21x29.21)

W9864G2JB-6I TR

Winbond Electronics

IC SDRAM 64MBIT 166MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (2M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

Paket: 90-TFBGA

Lager3.600

DRAM

SDRAM

64Mb (2M x 32)

Parallel

166MHz

-

5ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

AT45DB041E-UUN2B-T

Adesto Technologies

IC FLASH 4MBIT 85MHZ 8WLCSP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (256 Bytes x 2048 pages)
Memory Interface: SPI
Clock Frequency: 85MHz
Write Cycle Time - Word, Page: 8µs, 3ms
Access Time: -
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-UFBGA, WLCSP
Supplier Device Package: 8-WLCSP

Paket: 8-UFBGA, WLCSP

Lager3.824

FLASH

4Mb (256 Bytes x 2048 pages)

SPI

85MHz

8µs, 3ms

-

1.65 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

8-UFBGA, WLCSP

8-WLCSP

LE25U40CQE-AH

ON Semiconductor

IC FLASH 4MBIT 40MHZ 8VSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Memory Interface: SPI
Clock Frequency: 40MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-VSON (5x6)

Paket: 8-WDFN Exposed Pad

Lager24.000

FLASH

4Mb (512K x 8)

SPI

40MHz

5ms

-

2.3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-VSON (5x6)

24AA04-I/SNG

Microchip Technology

IC EEPROM 4KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (256 x 8 x 2)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

Paket: 8-SOIC (0.154", 3.90mm Width)

Lager4.960

EEPROM

4Kb (256 x 8 x 2)

I2C

400kHz

5ms

900ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

25LC040-I/P

Microchip Technology

IC EEPROM 4KBIT 2MHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

Paket: 8-DIP (0.300", 7.62mm)

Lager7.452

EEPROM

4Kb (512 x 8)

SPI

2MHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

BR24T32-W

Rohm Semiconductor

IC EEPROM 32KBIT 400KHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 32Kb (4K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.6 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP-T

Paket: 8-DIP (0.300", 7.62mm)

Lager18.948

EEPROM

32Kb (4K x 8)

I2C

400kHz

5ms

-

1.6 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-DIP-T

AS7C1024B-12JCN

Alliance Memory, Inc.

IC SRAM 1MBIT 12NS 32SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 32-SOJ

Paket: 32-BSOJ (0.400", 10.16mm Width)

Lager6.588

SRAM

SRAM - Asynchronous

1Mb (128K x 8)

Parallel

-

12ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

32-BSOJ (0.400", 10.16mm Width)

32-SOJ

MT48LC64M8A2P-75IT:C

Alliance Memory, Inc.

IC SDRAM 512MBIT 133MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP

Paket: 54-TSOP (0.400", 10.16mm Width)

Lager17.712

DRAM

SDRAM

512Mb (64M x 8)

Parallel

133MHz

15ns

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP

M48Z08-100PC1

STMicroelectronics

IC NVSRAM 64KBIT 100NS 28DIP

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Voltage - Supply: 4.75 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 28-DIP Module (0.600", 15.24mm)
Supplier Device Package: 28-PCDIP, CAPHAT?

Paket: 28-DIP Module (0.600", 15.24mm)

Lager5.856

NVSRAM

NVSRAM (Non-Volatile SRAM)

64Kb (8K x 8)

Parallel

-

100ns

4.75 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

28-DIP Module (0.600", 15.24mm)

28-PCDIP, CAPHAT?

MT53D256M64D4NY-046 XT:B

Micron Technology Inc.

IC DRAM 16G 2133MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 16Gb (256M x 64)
Memory Interface: -
Clock Frequency: 2133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 105°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Lager4.640

DRAM

SDRAM - Mobile LPDDR4

16Gb (256M x 64)

-

2133MHz

-

1.1V

-30°C ~ 105°C (TC)

-

25AA1024-I/WF16K

Microchip Technology

IC EEPROM 1M SPI 20MHZ WAFER

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Mb (128K x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 6ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

Paket: Die

Lager5.760

EEPROM

1Mb (128K x 8)

SPI

20MHz

6ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

Die

MT51K128M32HF-60 N:B

Micron Technology Inc.

IC GDDR5 4G 128MX32 FBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Lager5.520

-

MX25L51245GZ2I-10G

Macronix

IC FLASH SERIAL NOR 512M 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8)
Memory Interface: SPI
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 60µs, 750µs
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (8x6)

Paket: 8-WDFN Exposed Pad

Lager22.092

FLASH

FLASH - NOR

512Mb (64M x 8)

SPI

166MHz

60µs, 750µs

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (8x6)

S29GL064S70FHI040

Cypress Semiconductor Corp

IC FLASH 64M PARALLEL 64FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (13x11)

Paket: 64-LBGA

Lager3.312

FLASH

FLASH - NOR

64Mb (4M x 16)

Parallel

-

60ns

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (13x11)

S25FL256LAGNFN011

Cypress Semiconductor Corp

IC NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x8)

Paket: 8-WDFN Exposed Pad

Lager3.280

FLASH

FLASH - NOR

256Mb (32M x 8)

SPI - Quad I/O, QPI

133MHz

-

2.7 V ~ 3.6 V

-40°C ~ 125°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x8)

AT25PE16-SHF-T

Adesto Technologies

8-SOIC-W IND TEMP 2.3V

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 16M (4096 pages x 512 bytes)
Memory Interface: SPI
Clock Frequency: 85MHz
Write Cycle Time - Word, Page: 8µs, 4ms
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

Paket: 8-SOIC (0.209", 5.30mm Width)

Lager5.184

FLASH

16M (4096 pages x 512 bytes)

SPI

85MHz

8µs, 4ms

-

2.3 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

MT53D512M32D2DS-053 WT:D TR

Micron Technology Inc.

IC DRAM 16G 1866MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 16Gb (512M x 32)
Memory Interface: -
Clock Frequency: 1866MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Lager7.328

DRAM

SDRAM - Mobile LPDDR4

16Gb (512M x 32)

-

1866MHz

-

1.1V

-30°C ~ 85°C (TC)

-

IS62WVS1288GBLL-45NLI

ISSI, Integrated Silicon Solution Inc

1Mb, Serial SRAM, 2.7V-3.6V, 45M

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 1Mbit
Memory Interface: SPI - Quad I/O, SDI
Clock Frequency: 45 MHz
Write Cycle Time - Word, Page: -
Access Time: 15 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

Paket: -

Request a Quote

SRAM

SRAM - Synchronous

1Mbit

SPI - Quad I/O, SDI

45 MHz

-

15 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

S29GL064N11TFVR43

Infineon Technologies

IC FLASH 64MBIT PARALLEL 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 110ns
Access Time: 110 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

Paket: -

Request a Quote

FLASH

FLASH - NOR

64Mbit

Parallel

-

110ns

110 ns

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

W25Q256JWPIQ

Winbond Electronics

IC FLASH 256MBIT SPI/QUAD 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 6 ns
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x5)

Paket: -

Request a Quote

FLASH

FLASH - NOR

256Mbit

SPI - Quad I/O

133 MHz

5ms

6 ns

1.7V ~ 1.95V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x5)

S99JL064J0020

Infineon Technologies

IC GATE NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

-

MT29F512G08EBLCEJ4-R-C

Micron Technology Inc.

IC FLASH 512GBIT PAR 132VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 512Gbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.6V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 132-VBGA
Supplier Device Package: 132-VBGA (12x18)

Paket: -

Request a Quote

FLASH

FLASH - NAND (TLC)

512Gbit

Parallel

-

2.6V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

132-VBGA

132-VBGA (12x18)

GD55B01GEFIRR

GigaDevice Semiconductor (HK) Limited

1GBIT, 3.3V, SOP16 300MIL, INDUS

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 1Gbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOP

Paket: -

Lager2.727

FLASH

FLASH - NOR (SLC)

1Gbit

SPI - Quad I/O, QPI, DTR

133 MHz

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOP

W25Q20EWNB01

Winbond Electronics

IC FLASH 2MBIT SPI/QUAD 104MHZ

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 30µs, 800µs
Access Time: 6 ns
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

FLASH

FLASH - NOR

2Mbit

SPI - Quad I/O

104 MHz

30µs, 800µs

6 ns

1.65V ~ 1.95V

-

W631GG8MB09J-TR

Winbond Electronics

IC DRAM 1GBIT SSTL 15 78VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gbit
Memory Interface: SSTL_15
Clock Frequency: 1.066 GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-VFBGA
Supplier Device Package: 78-VFBGA (8x10.5)

Paket: -

Request a Quote

DRAM

SDRAM - DDR3

1Gbit

SSTL_15

1.066 GHz

15ns

20 ns

1.425V ~ 1.575V

-40°C ~ 105°C (TC)

Surface Mount

78-VFBGA

78-VFBGA (8x10.5)