Page 420 - Speicher | Integrierte Schaltungen (ICs)

Teilenummer	Hersteller	Beschreibung	Paket	Lager	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
S30MS02GR25TFW010	Cypress Semiconductor Corp	IC FLASH MEMORY 48TSOP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Lager3.664	-	-	-	-	-	-	-	-	-	-	-	-
IS29GL256S-10TFV020	Cypress Semiconductor Corp	NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 100ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Lager5.360	FLASH	FLASH - NOR	256Mb (32M x 8)	Parallel	-	60ns	100ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT48LC32M16A2TG-75 L:C	Micron Technology Inc.	IC SDRAM 512MBIT 133MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	Paket: 54-TSOP (0.400", 10.16mm Width)	Lager2.080	DRAM	SDRAM	512Mb (32M x 16)	Parallel	133MHz	15ns	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
MT47H32M16CC-3E:B TR	Micron Technology Inc.	IC SDRAM 512MBIT 333MHZ 84FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: 450ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-FBGA (12x12.5)	Paket: 84-TFBGA	Lager3.920	DRAM	SDRAM - DDR2	512Mb (32M x 16)	Parallel	333MHz	15ns	450ps	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	Surface Mount	84-TFBGA	84-FBGA (12x12.5)
AT27C010L-12TC	Microchip Technology	IC OTP 1MBIT 120NS 32TSOP Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 120ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 32-TSOP	Paket: 32-TFSOP (0.724", 18.40mm Width)	Lager3.264	EPROM	EPROM - OTP	1Mb (128K x 8)	Parallel	-	-	120ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	32-TFSOP (0.724", 18.40mm Width)	32-TSOP
AT27LV256A-70JC	Microchip Technology	IC OTP 256KBIT 70NS 32PLCC Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 70ns Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	Paket: 32-LCC (J-Lead)	Lager6.880	EPROM	EPROM - OTP	256Kb (32K x 8)	Parallel	-	-	70ns	3 V ~ 3.6 V, 4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
70V9269S7PRFI	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 7.5NS 128TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 256Kb (16K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 128-LQFP Supplier Device Package: 128-TQFP (14x20)	Paket: 128-LQFP	Lager5.040	SRAM	SRAM - Dual Port, Synchronous	256Kb (16K x 16)	Parallel	-	-	7.5ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	128-LQFP	128-TQFP (14x20)
7134LA25JI	IDT, Integrated Device Technology Inc	IC SRAM 32KBIT 25NS 52PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 32Kb (4K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 52-LCC (J-Lead) Supplier Device Package: 52-PLCC (19.13x19.13)	Paket: 52-LCC (J-Lead)	Lager4.752	SRAM	SRAM - Dual Port, Asynchronous	32Kb (4K x 8)	Parallel	-	25ns	25ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	52-LCC (J-Lead)	52-PLCC (19.13x19.13)
CY15B101N-ZS60XAT	Cypress Semiconductor Corp	IC FRAM 1MBIT 60NS 44TSOPII Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90ns Voltage - Supply: 2 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	Paket: 44-TSOP (0.400", 10.16mm Width)	Lager2.800	FRAM	FRAM (Ferroelectric RAM)	1Mb (64K x 16)	Parallel	-	90ns	90ns	2 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
IS42S32800J-6BL-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 256MBIT 166MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (8M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	Paket: 90-TFBGA	Lager6.032	DRAM	SDRAM	256Mb (8M x 32)	Parallel	166MHz	-	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
MT29F1G08ABAEAH4-AITX:E TR	Micron Technology Inc.	IC FLASH 1GBIT 20NS 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Lager5.504	FLASH	FLASH - NAND	1Gb (128M x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
71V416L12PHG8	IDT, Integrated Device Technology Inc	IC SRAM 4MBIT 12NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	Paket: 44-TSOP (0.400", 10.16mm Width)	Lager3.328	SRAM	SRAM - Asynchronous	4Mb (256K x 16)	Parallel	-	12ns	12ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
IS62LV256AL-20TLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 256KBIT 20NS 28TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 28-TSSOP (0.465", 11.80mm Width) Supplier Device Package: 28-TSOP I	Paket: 28-TSSOP (0.465", 11.80mm Width)	Lager5.568	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	20ns	20ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	28-TSSOP (0.465", 11.80mm Width)	28-TSOP I
25AA040AT-I/MNY	Microchip Technology	IC EEPROM 4KBIT 10MHZ 8TDFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WFDFN Exposed Pad Supplier Device Package: 8-TDFN (2x3)	Paket: 8-WFDFN Exposed Pad	Lager4.672	EEPROM	EEPROM	4Kb (512 x 8)	SPI	10MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-WFDFN Exposed Pad	8-TDFN (2x3)
34AA02-E/ST	Microchip Technology	IC EEPROM 2KBIT 400KHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Paket: 8-TSSOP (0.173", 4.40mm Width)	Lager5.472	EEPROM	EEPROM	2Kb (256 x 8)	I2C	400kHz	5ms	900ns	1.7 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
S25FL512SDPMFI011	Cypress Semiconductor Corp	IC FLASH 512MBIT 66MHZ 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 66MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	Paket: 16-SOIC (0.295", 7.50mm Width)	Lager6.756	FLASH	FLASH - NOR	512Mb (64M x 8)	SPI - Quad I/O	66MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
25LC080C-I/ST	Microchip Technology	IC EEPROM 8KBIT 10MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (1K x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Paket: 8-TSSOP (0.173", 4.40mm Width)	Lager15.678	EEPROM	EEPROM	8Kb (1K x 8)	SPI	10MHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
DS28E25G+U	Maxim Integrated	IC EEPROM 4K 1WIRE 2SFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (4K x 1) Memory Interface: 1-Wire® Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 2µs Voltage - Supply: 2.97 V ~ 3.63 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 2-SFN Supplier Device Package: 2-SFN (6x6)	Paket: 2-SFN	Lager2.000	EEPROM	EEPROM	4Kb (4K x 1)	1-Wire®	-	-	2µs	2.97 V ~ 3.63 V	-40°C ~ 85°C (TA)	Surface Mount	2-SFN	2-SFN (6x6)
S29GL128P11FFIV23	Cypress Semiconductor Corp	IC FLASH 128M PARALLEL 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 110ns Access Time: 110ns Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (13x11)	Paket: 64-LBGA	Lager4.896	FLASH	FLASH - NOR	128Mb (16M x 8)	Parallel	-	110ns	110ns	1.65 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (13x11)
S25FL128SDPBHBC00	Cypress Semiconductor Corp	IC FLASH 128M SPI 66MHZ 24BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 66MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-BGA (8x6)	Paket: 24-TBGA	Lager6.096	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI - Quad I/O	66MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	24-TBGA	24-BGA (8x6)
IS42S16160G-6BI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 256M PARALLEL 54TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	Paket: 54-TFBGA	Lager3.456	DRAM	SDRAM	256Mb (16M x 16)	Parallel	166MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C	Surface Mount	54-TFBGA	54-TFBGA (8x8)
MTFC8GAMALBH-AAT ES TR	Micron Technology Inc.	IC FLASH 64G MMC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Lager2.224	FLASH	FLASH - NAND	64Gb (8G x 8)	MMC	-	-	-	-	-40°C ~ 105°C (TA)	-	-	-
AM27S281-BLA	Advanced Micro Devices	IC PROM 8KBIT PARALLEL 24CDIP Memory Type: Non-Volatile Memory Format: PROM Technology: - Memory Size: 8Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 80 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TC) Mounting Type: Through Hole Package / Case: 24-CDIP (0.300", 7.62mm) Supplier Device Package: 24-CDIP	Paket: -	Request a Quote	PROM	-	8Kbit	Parallel	-	-	80 ns	4.5V ~ 5.5V	-55°C ~ 125°C (TC)	Through Hole	24-CDIP (0.300", 7.62mm)	24-CDIP
AF008GEC5A-2001A3	ATP Electronics, Inc.	IC FLASH 64GBIT EMMC 153BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (pSLC) Memory Size: 64Gbit Memory Interface: eMMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 153-FBGA Supplier Device Package: 153-BGA (11.5x13)	Paket: -	Lager558	FLASH	FLASH - NAND (pSLC)	64Gbit	eMMC	-	-	-	-	-40°C ~ 85°C	Surface Mount	153-FBGA	153-BGA (11.5x13)
IS43TR16640ED-125KBLI-TR	ISSI, Integrated Silicon Solution Inc	1G, 1.5V, DDR3 w/ ECC, 64Mx16, 1 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 1Gbit Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	Paket: -	Request a Quote	DRAM	SDRAM - DDR3	1Gbit	Parallel	800 MHz	15ns	20 ns	1.425V ~ 1.575V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
S99GL01GS10TFI020	Infineon Technologies	INFINEON Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
CY62128BLL-70ZXCT	Cypress Semiconductor Corp	IC SRAM 1MBIT PARALLEL 32TSOP I Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 32-TSOP I	Paket: -	Request a Quote	SRAM	SRAM - Asynchronous	1Mbit	Parallel	-	70ns	70 ns	4.5V ~ 5.5V	0°C ~ 70°C (TA)	Surface Mount	32-TFSOP (0.724", 18.40mm Width)	32-TSOP I
IS43LD32640C-18BLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 2GBIT PARALLEL 134TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 2Gbit Memory Interface: HSUL_12 Clock Frequency: 533 MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.5 ns Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	Paket: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR2-S4	2Gbit	HSUL_12	533 MHz	15ns	5.5 ns	1.14V ~ 1.3V, 1.7V ~ 1.95V	-40°C ~ 85°C (TC)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)
W63AH2NBVACI-TR	Winbond Electronics	IC DRAM 1GBIT HSUL 12 178VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 1Gbit Memory Interface: HSUL_12 Clock Frequency: 933 MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.5 ns Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 178-VFBGA Supplier Device Package: 178-VFBGA (11x11.5)	Paket: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR3	1Gbit	HSUL_12	933 MHz	15ns	5.5 ns	1.14V ~ 1.3V, 1.7V ~ 1.95V	-40°C ~ 85°C (TC)	Surface Mount	178-VFBGA	178-VFBGA (11x11.5)
DS28E02P-W10-5	Analog Devices Inc./Maxim Integrated	IC EEPROM 1KBIT 1-WIRE 6TSOC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kbit Memory Interface: 1-Wire® Clock Frequency: - Write Cycle Time - Word, Page: 25ms Access Time: 2 µs Voltage - Supply: 1.75V ~ 3.65V Operating Temperature: -20°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 6-SMD, J-Lead Supplier Device Package: 6-TSOC	Paket: -	Request a Quote	EEPROM	EEPROM	1Kbit	1-Wire®	-	25ms	2 µs	1.75V ~ 3.65V	-20°C ~ 85°C (TA)	Surface Mount	6-SMD, J-Lead	6-TSOC

S30MS02GR25TFW010

Cypress Semiconductor Corp

IC FLASH MEMORY 48TSOP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Lager3.664

-

IS29GL256S-10TFV020

Cypress Semiconductor Corp

NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 100ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Lager5.360

FLASH

FLASH - NOR

256Mb (32M x 8)

Parallel

-

60ns

100ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

MT48LC32M16A2TG-75 L:C

Micron Technology Inc.

IC SDRAM 512MBIT 133MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

Paket: 54-TSOP (0.400", 10.16mm Width)

Lager2.080

DRAM

SDRAM

512Mb (32M x 16)

Parallel

133MHz

15ns

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

MT47H32M16CC-3E:B TR

Micron Technology Inc.

IC SDRAM 512MBIT 333MHZ 84FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-FBGA (12x12.5)

Paket: 84-TFBGA

Lager3.920

DRAM

SDRAM - DDR2

512Mb (32M x 16)

Parallel

333MHz

15ns

450ps

1.7 V ~ 1.9 V

0°C ~ 85°C (TC)

Surface Mount

84-TFBGA

84-FBGA (12x12.5)

AT27C010L-12TC

Microchip Technology

IC OTP 1MBIT 120NS 32TSOP

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 120ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP

Paket: 32-TFSOP (0.724", 18.40mm Width)

Lager3.264

EPROM

EPROM - OTP

1Mb (128K x 8)

Parallel

-

120ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

32-TFSOP (0.724", 18.40mm Width)

32-TSOP

AT27LV256A-70JC

Microchip Technology

IC OTP 256KBIT 70NS 32PLCC

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 70ns
Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

Paket: 32-LCC (J-Lead)

Lager6.880

EPROM

EPROM - OTP

256Kb (32K x 8)

Parallel

-

70ns

3 V ~ 3.6 V, 4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

70V9269S7PRFI

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 7.5NS 128TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 256Kb (16K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 128-LQFP
Supplier Device Package: 128-TQFP (14x20)

Paket: 128-LQFP

Lager5.040

SRAM

SRAM - Dual Port, Synchronous

256Kb (16K x 16)

Parallel

-

7.5ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

128-LQFP

128-TQFP (14x20)

7134LA25JI

IDT, Integrated Device Technology Inc

IC SRAM 32KBIT 25NS 52PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 32Kb (4K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-LCC (J-Lead)
Supplier Device Package: 52-PLCC (19.13x19.13)

Paket: 52-LCC (J-Lead)

Lager4.752

SRAM

SRAM - Dual Port, Asynchronous

32Kb (4K x 8)

Parallel

-

25ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

52-LCC (J-Lead)

52-PLCC (19.13x19.13)

CY15B101N-ZS60XAT

Cypress Semiconductor Corp

IC FRAM 1MBIT 60NS 44TSOPII

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Voltage - Supply: 2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

Paket: 44-TSOP (0.400", 10.16mm Width)

Lager2.800

FRAM

FRAM (Ferroelectric RAM)

1Mb (64K x 16)

Parallel

-

90ns

2 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

IS42S32800J-6BL-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (8M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

Paket: 90-TFBGA

Lager6.032

DRAM

SDRAM

256Mb (8M x 32)

Parallel

166MHz

-

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

MT29F1G08ABAEAH4-AITX:E TR

Micron Technology Inc.

IC FLASH 1GBIT 20NS 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Lager5.504

FLASH

FLASH - NAND

1Gb (128M x 8)

Parallel

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

71V416L12PHG8

IDT, Integrated Device Technology Inc

IC SRAM 4MBIT 12NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

Paket: 44-TSOP (0.400", 10.16mm Width)

Lager3.328

SRAM

SRAM - Asynchronous

4Mb (256K x 16)

Parallel

-

12ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

IS62LV256AL-20TLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 256KBIT 20NS 28TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Supplier Device Package: 28-TSOP I

Paket: 28-TSSOP (0.465", 11.80mm Width)

Lager5.568

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

20ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

28-TSSOP (0.465", 11.80mm Width)

28-TSOP I

25AA040AT-I/MNY

Microchip Technology

IC EEPROM 4KBIT 10MHZ 8TDFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Supplier Device Package: 8-TDFN (2x3)

Paket: 8-WFDFN Exposed Pad

Lager4.672

EEPROM

4Kb (512 x 8)

SPI

10MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-WFDFN Exposed Pad

8-TDFN (2x3)

34AA02-E/ST

Microchip Technology

IC EEPROM 2KBIT 400KHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

Paket: 8-TSSOP (0.173", 4.40mm Width)

Lager5.472

EEPROM

2Kb (256 x 8)

I2C

400kHz

5ms

900ns

1.7 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

S25FL512SDPMFI011

Cypress Semiconductor Corp

IC FLASH 512MBIT 66MHZ 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 66MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

Paket: 16-SOIC (0.295", 7.50mm Width)

Lager6.756

FLASH

FLASH - NOR

512Mb (64M x 8)

SPI - Quad I/O

66MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

25LC080C-I/ST

Microchip Technology

IC EEPROM 8KBIT 10MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

Paket: 8-TSSOP (0.173", 4.40mm Width)

Lager15.678

EEPROM

8Kb (1K x 8)

SPI

10MHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

DS28E25G+U

Maxim Integrated

IC EEPROM 4K 1WIRE 2SFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (4K x 1)
Memory Interface: 1-Wire®
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 2µs
Voltage - Supply: 2.97 V ~ 3.63 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 2-SFN
Supplier Device Package: 2-SFN (6x6)

Paket: 2-SFN

Lager2.000

EEPROM

4Kb (4K x 1)

1-Wire®

-

2µs

2.97 V ~ 3.63 V

-40°C ~ 85°C (TA)

Surface Mount

2-SFN

2-SFN (6x6)

S29GL128P11FFIV23

Cypress Semiconductor Corp

IC FLASH 128M PARALLEL 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 110ns
Access Time: 110ns
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (13x11)

Paket: 64-LBGA

Lager4.896

FLASH

FLASH - NOR

128Mb (16M x 8)

Parallel

-

110ns

1.65 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (13x11)

S25FL128SDPBHBC00

Cypress Semiconductor Corp

IC FLASH 128M SPI 66MHZ 24BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 66MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (8x6)

Paket: 24-TBGA

Lager6.096

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI - Quad I/O

66MHz

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

24-TBGA

24-BGA (8x6)

IS42S16160G-6BI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 256M PARALLEL 54TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

Paket: 54-TFBGA

Lager3.456

DRAM

SDRAM

256Mb (16M x 16)

Parallel

166MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C

Surface Mount

54-TFBGA

54-TFBGA (8x8)

MTFC8GAMALBH-AAT ES TR

Micron Technology Inc.

IC FLASH 64G MMC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Lager2.224

FLASH

FLASH - NAND

64Gb (8G x 8)

MMC

-

-40°C ~ 105°C (TA)

-

AM27S281-BLA

Advanced Micro Devices

IC PROM 8KBIT PARALLEL 24CDIP

Memory Type: Non-Volatile
Memory Format: PROM
Technology: -
Memory Size: 8Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 80 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TC)
Mounting Type: Through Hole
Package / Case: 24-CDIP (0.300", 7.62mm)
Supplier Device Package: 24-CDIP

Paket: -

Request a Quote

PROM

-

8Kbit

Parallel

-

80 ns

4.5V ~ 5.5V

-55°C ~ 125°C (TC)

Through Hole

24-CDIP (0.300", 7.62mm)

24-CDIP

AF008GEC5A-2001A3

ATP Electronics, Inc.

IC FLASH 64GBIT EMMC 153BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (pSLC)
Memory Size: 64Gbit
Memory Interface: eMMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 153-FBGA
Supplier Device Package: 153-BGA (11.5x13)

Paket: -

Lager558

FLASH

FLASH - NAND (pSLC)

64Gbit

eMMC

-

-40°C ~ 85°C

Surface Mount

153-FBGA

153-BGA (11.5x13)

IS43TR16640ED-125KBLI-TR

ISSI, Integrated Silicon Solution Inc

1G, 1.5V, DDR3 w/ ECC, 64Mx16, 1

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gbit
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

Paket: -

Request a Quote

DRAM

SDRAM - DDR3

1Gbit

Parallel

800 MHz

15ns

20 ns

1.425V ~ 1.575V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

S99GL01GS10TFI020

Infineon Technologies

INFINEON

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

-

CY62128BLL-70ZXCT

Cypress Semiconductor Corp

IC SRAM 1MBIT PARALLEL 32TSOP I

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP I

Paket: -

Request a Quote

SRAM

SRAM - Asynchronous

1Mbit

Parallel

-

70ns

70 ns

4.5V ~ 5.5V

0°C ~ 70°C (TA)

Surface Mount

32-TFSOP (0.724", 18.40mm Width)

32-TSOP I

IS43LD32640C-18BLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 2GBIT PARALLEL 134TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 2Gbit
Memory Interface: HSUL_12
Clock Frequency: 533 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.5 ns
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

Paket: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR2-S4

2Gbit

HSUL_12

533 MHz

15ns

5.5 ns

1.14V ~ 1.3V, 1.7V ~ 1.95V

-40°C ~ 85°C (TC)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)

W63AH2NBVACI-TR

Winbond Electronics

IC DRAM 1GBIT HSUL 12 178VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 1Gbit
Memory Interface: HSUL_12
Clock Frequency: 933 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.5 ns
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 178-VFBGA
Supplier Device Package: 178-VFBGA (11x11.5)

Paket: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR3

1Gbit

HSUL_12

933 MHz

15ns

5.5 ns

1.14V ~ 1.3V, 1.7V ~ 1.95V

-40°C ~ 85°C (TC)

Surface Mount

178-VFBGA

178-VFBGA (11x11.5)

DS28E02P-W10-5

Analog Devices Inc./Maxim Integrated

IC EEPROM 1KBIT 1-WIRE 6TSOC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kbit
Memory Interface: 1-Wire®
Clock Frequency: -
Write Cycle Time - Word, Page: 25ms
Access Time: 2 µs
Voltage - Supply: 1.75V ~ 3.65V
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-SMD, J-Lead
Supplier Device Package: 6-TSOC

Paket: -

Request a Quote

EEPROM

1Kbit

1-Wire®

-

25ms

2 µs

1.75V ~ 3.65V

-20°C ~ 85°C (TA)

Surface Mount

6-SMD, J-Lead

6-TSOC