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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
CM753-80029
Cypress Semiconductor Corp

IC FLASH NOR

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager2.208
-
-
-
-
-
-
-
-
-
-
-
-
W25Q128FVTIG
Winbond Electronics

IC FLASH 128MBIT 104MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
Paket: 8-SOIC (0.209", 5.30mm Width)
Lager7.888
FLASH
FLASH - NOR
128Mb (16M x 8)
SPI
104MHz
3ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIC
hot SST25VF080B-80-4I-SAE
Microchip Technology

IC FLASH 8MBIT 80MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 80MHz
  • Write Cycle Time - Word, Page: 10µs
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager6.896
FLASH
FLASH
8Mb (1M x 8)
SPI
80MHz
10µs
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IDT71V67602S133BQI8
IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 133MHZ 165CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 4.2ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-CABGA (13x15)
Paket: 165-TBGA
Lager7.920
SRAM
SRAM - Synchronous
9Mb (256K x 36)
Parallel
133MHz
-
4.2ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
165-TBGA
165-CABGA (13x15)
AT25040AY1-10YU-1.8
Microchip Technology

IC EEPROM 4KBIT 20MHZ 8MAP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (512 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 20MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UDFN Exposed Pad
  • Supplier Device Package: 8-MAP (3x4.9)
Paket: 8-UDFN Exposed Pad
Lager5.872
EEPROM
EEPROM
4Kb (512 x 8)
SPI
20MHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-UDFN Exposed Pad
8-MAP (3x4.9)
CY7C037V-15AXC
Cypress Semiconductor Corp

IC SRAM 576KBIT 15NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 576Kb (32K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
Paket: 100-LQFP
Lager7.904
SRAM
SRAM - Dual Port, Asynchronous
576Kb (32K x 18)
Parallel
-
15ns
15ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
hot AT93C46W-10SI-2.7
Microchip Technology

IC EEPROM 1KBIT 2MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (128 x 8 , 64 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager294.000
EEPROM
EEPROM
1Kb (128 x 8 , 64 x 16)
SPI
2MHz
10ms
-
2.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
AT25020-10PC
Microchip Technology

IC EEPROM 2KBIT 2.1MHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 3MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
Paket: 8-DIP (0.300", 7.62mm)
Lager2.304
EEPROM
EEPROM
2Kb (256 x 8)
SPI
3MHz
5ms
-
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
70T633S10BCGI
IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 10NS 256CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 9Mb (512K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 2.4 V ~ 2.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-LBGA
  • Supplier Device Package: 256-CABGA (17x17)
Paket: 256-LBGA
Lager3.344
SRAM
SRAM - Dual Port, Asynchronous
9Mb (512K x 18)
Parallel
-
10ns
10ns
2.4 V ~ 2.6 V
-40°C ~ 85°C (TA)
Surface Mount
256-LBGA
256-CABGA (17x17)
MT29F1HT08ELHBBG1-3R:B TR
Micron Technology Inc.

IC FLASH 1.5TBIT 333MHZ 272VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1.5Tb (192G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager7.088
FLASH
FLASH - NAND
1.5Tb (192G x 8)
Parallel
333MHz
-
-
2.5 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
70V08L15PFG8
IDT, Integrated Device Technology Inc

IC SRAM 512KBIT 15NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
Paket: 100-LQFP
Lager3.104
SRAM
SRAM - Dual Port, Asynchronous
512Kb (64K x 8)
Parallel
-
15ns
15ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
DS1230W-100IND+
Maxim Integrated

IC NVSRAM 256KBIT 100NS 28EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 28-DIP Module (0.600", 15.24mm)
  • Supplier Device Package: 28-EDIP
Paket: 28-DIP Module (0.600", 15.24mm)
Lager6.368
NVSRAM
NVSRAM (Non-Volatile SRAM)
256Kb (32K x 8)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Through Hole
28-DIP Module (0.600", 15.24mm)
28-EDIP
CY14B104K-ZS45XIT
Cypress Semiconductor Corp

IC NVSRAM 4MBIT 45NS 44TSOP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
Paket: 44-TSOP (0.400", 10.16mm Width)
Lager3.216
NVSRAM
NVSRAM (Non-Volatile SRAM)
4Mb (512K x 8)
Parallel
-
45ns
45ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
7134LA20JG
IDT, Integrated Device Technology Inc

IC SRAM 32KBIT 20NS 52PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 32Kb (4K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 52-LCC (J-Lead)
  • Supplier Device Package: 52-PLCC (19.13x19.13)
Paket: 52-LCC (J-Lead)
Lager4.896
SRAM
SRAM - Dual Port, Asynchronous
32Kb (4K x 8)
Parallel
-
20ns
20ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
52-LCC (J-Lead)
52-PLCC (19.13x19.13)
IS46TR16128B-15HBLA2-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 667MHZ 96BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 667MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
Paket: 96-TFBGA
Lager5.328
DRAM
SDRAM - DDR3
2Gb (128M x 16)
Parallel
667MHz
15ns
20ns
1.425 V ~ 1.575 V
-40°C ~ 105°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
7130LA20PFG8
IDT, Integrated Device Technology Inc

IC SRAM 8KBIT 20NS 64TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 8Kb (1K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (14x14)
Paket: 64-LQFP
Lager4.048
SRAM
SRAM - Dual Port, Asynchronous
8Kb (1K x 8)
Parallel
-
20ns
20ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
64-LQFP
64-TQFP (14x14)
MT25QU256ABA8ESF-0SIT TR
Micron Technology Inc.

IC FLASH 256MBIT 108MHZ 16SO

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 8ms, 2.8ms
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 2 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager5.408
FLASH
FLASH - NOR
256Mb (32M x 8)
SPI
133MHz
8ms, 2.8ms
-
1.7 V ~ 2 V
-40°C ~ 85°C (TA)
-
-
-
34AA04T-E/MUY
Microchip Technology

IC EEPROM 4KBIT 1MHZ 8UDFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (256 x 8 x 2)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 350ns
  • Voltage - Supply: 1.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: 8-UDFN (2x3)
Paket: 8-UFDFN Exposed Pad
Lager5.968
EEPROM
EEPROM
4Kb (256 x 8 x 2)
I2C
1MHz
5ms
350ns
1.7 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
8-UFDFN Exposed Pad
8-UDFN (2x3)
BR24G128FJ-3GTE2
Rohm Semiconductor

IC EEPROM 128KBIT 400KHZ 8SOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 128Kb (16K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.6 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP-J
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager7.088
EEPROM
EEPROM
128Kb (16K x 8)
I2C
400kHz
5ms
-
1.6 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP-J
AT27C256R-70JU-T
Microchip Technology

IC OTP 256KBIT 70NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
Paket: 32-LCC (J-Lead)
Lager2.336
EPROM
EPROM - OTP
256Kb (32K x 8)
Parallel
-
-
70ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
S29GL064N11TFIV10
Cypress Semiconductor Corp

IC FLASH 64MBIT 110NS 56TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mb (8M x 8, 4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 110ns
  • Access Time: 110ns
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 56-TSOP
Paket: 56-TFSOP (0.724", 18.40mm Width)
Lager7.068
FLASH
FLASH - NOR
64Mb (8M x 8, 4M x 16)
Parallel
-
110ns
110ns
1.65 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
56-TFSOP (0.724", 18.40mm Width)
56-TSOP
71256SA15TPG
IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 15NS 28DIP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 28-DIP (0.300", 7.62mm)
  • Supplier Device Package: 28-PDIP
Paket: 28-DIP (0.300", 7.62mm)
Lager8.412
SRAM
SRAM - Asynchronous
256Kb (32K x 8)
Parallel
-
15ns
15ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Through Hole
28-DIP (0.300", 7.62mm)
28-PDIP
28093465 A
Cypress Semiconductor Corp

IC FLASH NOR 56TSOP

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager5.328
-
-
-
-
-
-
-
-
-
-
-
-
MT46H32M32LFT68MWC2
Micron Technology Inc.

MOBILE DDR 1G DIE 32MX32

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager6.080
-
-
-
-
-
-
-
-
-
-
-
-
MT25QL01GBBB8E12-0AUT TR
Micron Technology Inc.

IC FLASH 1G SPI 133MHZ 24TPBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 8ms, 2.8ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-T-PBGA (6x8)
Paket: 24-TBGA
Lager6.224
FLASH
FLASH - NOR
1Gb (128M x 8)
SPI
133MHz
8ms, 2.8ms
-
2.7 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
24-TBGA
24-T-PBGA (6x8)
W25Q128FWPBQ
Winbond Electronics

IC FLASH 128MBIT SPI/QUAD 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 60µs, 5ms
  • Access Time: 6 ns
  • Voltage - Supply: 1.65V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (6x5)
Paket: -
Request a Quote
FLASH
FLASH - NOR
128Mbit
SPI - Quad I/O, QPI
104 MHz
60µs, 5ms
6 ns
1.65V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (6x5)
IS25LP032D-JTLE-TR
ISSI, Integrated Silicon Solution Inc

32Mb QSPI, 8-pin USON 3X4MM, RoH

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 32Mbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 40µs, 800µs
  • Access Time: 7 ns
  • Voltage - Supply: 2.3V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UDFN Exposed Pad
  • Supplier Device Package: 8-USON (4x3)
Paket: -
Request a Quote
FLASH
FLASH - NOR (SLC)
32Mbit
SPI - Quad I/O, QPI, DTR
133 MHz
40µs, 800µs
7 ns
2.3V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
8-UDFN Exposed Pad
8-USON (4x3)
K6X4008C1F-MF55000
Samsung

SRAM ASYNC SLOW 4MB 512Kx8 5V 32

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: -
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: 32-TSOP REVERSE
Paket: -
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SRAM
SRAM - Asynchronous
4Mbit
Parallel
-
55ns
-
4.5V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
-
32-TSOP REVERSE
MT62F1536M64D8EK-023-WT-ES-B-TR
Micron Technology Inc.

LPDDR5 96G 1.5GX64 FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR5
  • Memory Size: 96Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 4.266 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -25°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 441-TFBGA
  • Supplier Device Package: 441-TFBGA (14x14)
Paket: -
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DRAM
SDRAM - Mobile LPDDR5
96Gbit
Parallel
4.266 GHz
-
-
-
-25°C ~ 85°C
Surface Mount
441-TFBGA
441-TFBGA (14x14)
W25M02GWTBIG-TR
Winbond Electronics

IC FLASH 2GBIT SPI/QUAD 24TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 2Gbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 700µs
  • Access Time: 8 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-TFBGA (8x6)
Paket: -
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FLASH
FLASH - NAND (SLC)
2Gbit
SPI - Quad I/O
104 MHz
700µs
8 ns
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
24-TBGA
24-TFBGA (8x6)