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Speicher

Aufzeichnungen 62.144
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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
16-1004144-01-T
Cypress Semiconductor Corp

IC FLASH NOR

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager4.800
-
-
-
-
-
-
-
-
-
-
-
-
93C76B-I/MS
Microchip Technology

IC EEPROM 8KBIT 3MHZ 8MSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 8Kb (512 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 3MHz
  • Write Cycle Time - Word, Page: 2ms
  • Access Time: -
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
Paket: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Lager7.264
EEPROM
EEPROM
8Kb (512 x 16)
SPI
3MHz
2ms
-
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
IDT71P72604S200BQI8
IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 200MHZ 165CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II
  • Memory Size: 18Mb (512K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 7.88ns
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-CABGA (13x15)
Paket: 165-TBGA
Lager7.776
SRAM
SRAM - Synchronous, QDR II
18Mb (512K x 36)
Parallel
200MHz
-
7.88ns
1.7 V ~ 1.9 V
-40°C ~ 85°C (TA)
Surface Mount
165-TBGA
165-CABGA (13x15)
hot IDT71124S12Y
IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 12NS 32SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 32-SOJ
Paket: 32-BSOJ (0.400", 10.16mm Width)
Lager18.060
SRAM
SRAM - Asynchronous
1Mb (128K x 8)
Parallel
-
12ns
12ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
32-BSOJ (0.400", 10.16mm Width)
32-SOJ
AT28HC256-90PU
Microchip Technology

IC EEPROM 256KBIT 90NS 28DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 90ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Through Hole
  • Package / Case: 28-DIP (0.600", 15.24mm)
  • Supplier Device Package: 28-PDIP
Paket: 28-DIP (0.600", 15.24mm)
Lager4.416
EEPROM
EEPROM
256Kb (32K x 8)
Parallel
-
10ms
90ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Through Hole
28-DIP (0.600", 15.24mm)
28-PDIP
hot PSD835G2-70U
STMicroelectronics

IC FLASH 4MBIT 70NS 80LQFP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 80-LQFP
  • Supplier Device Package: 80-LQFP (12x12)
Paket: 80-LQFP
Lager3.600
FLASH
FLASH
4Mb (512K x 8)
Parallel
-
-
70ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
80-LQFP
80-LQFP (12x12)
AT28C64E-25TI
Microchip Technology

IC EEPROM 64KBIT 250NS 28TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 200µs
  • Access Time: 250ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 28-TSSOP (0.465", 11.80mm Width)
  • Supplier Device Package: 28-TSOP
Paket: 28-TSSOP (0.465", 11.80mm Width)
Lager2.944
EEPROM
EEPROM
64Kb (8K x 8)
Parallel
-
200µs
250ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
28-TSSOP (0.465", 11.80mm Width)
28-TSOP
AS7C316098B-10TIN
Alliance Memory, Inc.

IC SRAM 16MBIT 10NS 54TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
Paket: 54-TSOP (0.400", 10.16mm Width)
Lager3.984
SRAM
SRAM - Asynchronous
16Mb (1M x 16)
Parallel
-
10ns
10ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
MT51J256M32HF-80:A TR
Micron Technology Inc.

IC SGRAM 8GBIT 2.0GHZ 170FBGA

  • Memory Type: Volatile
  • Memory Format: RAM
  • Technology: SGRAM - GDDR5
  • Memory Size: 8Gb (256M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 2.0GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.3 V ~ 1.545 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 170-TFBGA
  • Supplier Device Package: 170-FBGA (12x14)
Paket: 170-TFBGA
Lager4.064
RAM
SGRAM - GDDR5
8Gb (256M x 32)
Parallel
2.0GHz
-
-
1.3 V ~ 1.545 V
0°C ~ 95°C (TC)
Surface Mount
170-TFBGA
170-FBGA (12x14)
hot AT28HC256E-90SU
Microchip Technology

IC EEPROM 256KBIT 90NS 28SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 90ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 28-SOIC
Paket: 28-SOIC (0.295", 7.50mm Width)
Lager5.056
EEPROM
EEPROM
256Kb (32K x 8)
Parallel
-
10ms
90ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
28-SOIC (0.295", 7.50mm Width)
28-SOIC
S34ML04G204BHI013
Cypress Semiconductor Corp

FLASH MEMORY NAND

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-BGA (11x9)
Paket: 63-VFBGA
Lager2.368
FLASH
FLASH - NAND
4Gb (512M x 8)
Parallel
-
25ns
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
63-VFBGA
63-BGA (11x9)
hot IS61LV256AL-10JLI
ISSI, Integrated Silicon Solution Inc

IC SRAM 256KBIT 10NS 28SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 3.135 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-BSOJ (0.300", 7.62mm Width)
  • Supplier Device Package: 28-SOJ
Paket: 28-BSOJ (0.300", 7.62mm Width)
Lager1.522.752
SRAM
SRAM - Asynchronous
256Kb (32K x 8)
Parallel
-
10ns
10ns
3.135 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
28-BSOJ (0.300", 7.62mm Width)
28-SOJ
24FC64T-I/SN
Microchip Technology

IC EEPROM 64KBIT 1MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 400ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager7.392
EEPROM
EEPROM
64Kb (8K x 8)
I2C
1MHz
5ms
400ns
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
CY7C25632KV18-400BZC
Cypress Semiconductor Corp

IC SRAM 72MBIT 400MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II+
  • Memory Size: 72Mb (4M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)
Paket: 165-LBGA
Lager3.968
SRAM
SRAM - Synchronous, QDR II+
72Mb (4M x 18)
Parallel
400MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (13x15)
11AA020-I/TO
Microchip Technology

IC EEPROM 2KBIT 100KHZ TO92-3

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: Single Wire
  • Clock Frequency: 100kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA)
Lager20.988
EEPROM
EEPROM
2Kb (256 x 8)
Single Wire
100kHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
AT25DF021A-XMHNHR-T
Adesto Technologies

IC FLASH 2MBIT 104MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 85MHz
  • Write Cycle Time - Word, Page: 12µs, 5ms
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
Paket: 8-TSSOP (0.173", 4.40mm Width)
Lager6.144
FLASH
FLASH
2Mb (256K x 8)
SPI
85MHz
12µs, 5ms
-
1.7 V ~ 3.6 V
-40°C ~ 125°C (TC)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
AS6C4016A-45BIN
Alliance Memory, Inc.

IC SRAM 4MBIT 45NS 48VFBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFBGA
  • Supplier Device Package: 48-VFBGA (6x7)
Paket: 48-VFBGA
Lager30.834
SRAM
SRAM - Asynchronous
4Mb (256K x 16)
Parallel
-
45ns
45ns
2.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
48-VFBGA
48-VFBGA (6x7)
MT29F2G01ABAGDSF-AAT:G
Micron Technology Inc.

IC FLASH 2G SPI SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 2Gb (2G x 1)
  • Memory Interface: SPI
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager5.760
FLASH
FLASH - NAND
2Gb (2G x 1)
SPI
-
-
-
2.7 V ~ 3.6 V
-40°C ~ 105°C (TC)
-
-
-
24AA512-I/S17K
Microchip Technology

IC EEPROM 512K I2C 400KHZ WAFER

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: I²C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
Paket: Die
Lager6.256
EEPROM
EEPROM
512Kb (64K x 8)
I²C
400kHz
5ms
900ns
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
Die
Die
MX25L25659FMI-10G
Macronix

IC FLASH 256MBIT

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager7.712
-
-
-
-
-
-
-
-
-
-
-
-
MX25R2035FOIH0
Macronix

IC FLASH 2MBIT

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager3.072
-
-
-
-
-
-
-
-
-
-
-
-
25LC010AT-E/SN16KVAO
Microchip Technology

1K 128X8 2.5V SER EE

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (128 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 10MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager5.792
EEPROM
EEPROM
1Kb (128 x 8)
SPI
10MHz
5ms
-
2.5V ~ 5.5V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
CY7C1351B-117AC
Cypress Semiconductor Corp

IC SRAM 4.5MBIT PAR 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, SDR
  • Memory Size: 4.5Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 117 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 7.5 ns
  • Voltage - Supply: 3.135V ~ 3.465V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
Paket: -
Request a Quote
SRAM
SRAM - Synchronous, SDR
4.5Mbit
Parallel
117 MHz
-
7.5 ns
3.135V ~ 3.465V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
GS8182D36BGD-300I
GSI Technology Inc.

IC SRAM 18MBIT PARALLEL 165FPBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Quad Port, Synchronous
  • Memory Size: 18Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 300 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 1.9V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FPBGA (15x13)
Paket: -
Request a Quote
SRAM
SRAM - Quad Port, Synchronous
18Mbit
Parallel
300 MHz
-
-
1.7V ~ 1.9V
-40°C ~ 85°C (TA)
Surface Mount
165-LBGA
165-FPBGA (15x13)
CY7C0430BV-100BGI
Cypress Semiconductor Corp

IC SRAM 1.152MBIT PAR 272PBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Quad Port, Synchronous
  • Memory Size: 1.152Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 100 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 272-BGA
  • Supplier Device Package: 272-PBGA (27x27)
Paket: -
Request a Quote
SRAM
SRAM - Quad Port, Synchronous
1.152Mbit
Parallel
100 MHz
-
5 ns
3V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
272-BGA
272-PBGA (27x27)
GD25LH16ENIGR
GigaDevice Semiconductor (HK) Limited

LINEAR IC

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
IS42S83200L-6TL
ISSI, Integrated Silicon Solution Inc

IC DRAM 256MBIT PAR 54TSOP II

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 256Mbit
  • Memory Interface: LVTTL
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
Paket: -
Request a Quote
DRAM
SDRAM
256Mbit
LVTTL
166 MHz
-
5.4 ns
3V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
MTFC128GAZAOTD-AIT
Micron Technology Inc.

UFS 1T

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-