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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
CY7C1069AV33-1XW14
Cypress Semiconductor Corp

IC SRAM 16GBIT 56TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 16Mb (2M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
Paket: 54-TSOP (0.400", 10.16mm Width)
Lager2.496
SRAM
SRAM - Asynchronous
16Mb (2M x 8)
Parallel
-
-
-
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
MX25R6435FM1IL0
Macronix

IC FLASH 64MBIT 80MHZ 8SOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mb (8M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 33MHz
  • Write Cycle Time - Word, Page: 100µs, 10ms
  • Access Time: -
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager7.472
FLASH
FLASH - NOR
64Mb (8M x 8)
SPI
33MHz
100µs, 10ms
-
1.65 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
AS4C4M16S-6BIN
Alliance Memory, Inc.

IC SDRAM 64MBIT 166MHZ 54BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 64Mb (4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 2ns
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
Paket: 54-TFBGA
Lager5.392
DRAM
SDRAM
64Mb (4M x 16)
Parallel
166MHz
2ns
5.4ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
54-TFBGA
54-TFBGA (8x8)
hot MTFC16GKQDI-IT
Micron Technology Inc.

IC FLASH 128GBIT 169TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 128Gb (16G x 8)
  • Memory Interface: MMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager6.112
FLASH
FLASH - NAND
128Gb (16G x 8)
MMC
-
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
-
-
CY7C11681KV18-400BZC
Cypress Semiconductor Corp

IC SRAM 18MBIT 400MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, DDR II+
  • Memory Size: 18Mb (1M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)
Paket: 165-LBGA
Lager5.216
SRAM
SRAM - Synchronous, DDR II+
18Mb (1M x 18)
Parallel
400MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (13x15)
CY7C1382S-167AXC
Cypress Semiconductor Corp

IC SRAM 18MBIT 167MHZ 100LQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 18Mb (1M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.4ns
  • Voltage - Supply: 3.135 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
Paket: 100-LQFP
Lager5.248
SRAM
SRAM - Synchronous
18Mb (1M x 18)
Parallel
167MHz
-
3.4ns
3.135 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
hot STK12C68-C45I
Cypress Semiconductor Corp

IC NVSRAM 64KBIT 45NS 28CDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 28-CDIP (0.300", 7.62mm)
  • Supplier Device Package: 28-CDIP
Paket: 28-CDIP (0.300", 7.62mm)
Lager4.496
NVSRAM
NVSRAM (Non-Volatile SRAM)
64Kb (8K x 8)
Parallel
-
45ns
45ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
28-CDIP (0.300", 7.62mm)
28-CDIP
CY7C1313BV18-167BZCT
Cypress Semiconductor Corp

IC SRAM 18MBIT 167MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II
  • Memory Size: 18Mb (1M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)
Paket: 165-LBGA
Lager5.632
SRAM
SRAM - Synchronous, QDR II
18Mb (1M x 18)
Parallel
167MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (13x15)
hot IS42S32400B-7BL
ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 143MHZ 90FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mb (4M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 143MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
Paket: 90-TFBGA
Lager22.344
DRAM
SDRAM
128Mb (4M x 32)
Parallel
143MHz
-
5.4ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
hot AT49BV002AN-70JU
Microchip Technology

IC FLASH 2MBIT 70NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 50µs
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
Paket: 32-LCC (J-Lead)
Lager9.540
FLASH
FLASH
2Mb (256K x 8)
Parallel
-
50µs
70ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
MT48LC4M32B2B5-7 IT:G TR
Micron Technology Inc.

IC SDRAM 128MBIT 143MHZ 90VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mb (4M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 143MHz
  • Write Cycle Time - Word, Page: 14ns
  • Access Time: 5.5ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-VFBGA
  • Supplier Device Package: 90-VFBGA (8x13)
Paket: 90-VFBGA
Lager3.872
DRAM
SDRAM
128Mb (4M x 32)
Parallel
143MHz
14ns
5.5ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
90-VFBGA
90-VFBGA (8x13)
AT24C512N-10SI-1.8
Microchip Technology

IC EEPROM 512KBIT 400KHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 900ns
  • Voltage - Supply: 1.8 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager5.600
EEPROM
EEPROM
512Kb (64K x 8)
I2C
400kHz
10ms
900ns
1.8 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
AT24C64W-10SC-1.8
Microchip Technology

IC EEPROM 64KBIT 400KHZ 8SO

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 900ns
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
Paket: 8-SOIC (0.209", 5.30mm Width)
Lager7.440
EEPROM
EEPROM
64Kb (8K x 8)
I2C
400kHz
10ms
900ns
1.8 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIC
hot AT28HC256-12JI
Microchip Technology

IC EEPROM 256KBIT 120NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 120ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
Paket: 32-LCC (J-Lead)
Lager7.692
EEPROM
EEPROM
256Kb (32K x 8)
Parallel
-
10ms
120ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
hot AT24C01-10PI
Microchip Technology

IC EEPROM 1KBIT 400KHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (128 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 900ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
Paket: 8-DIP (0.300", 7.62mm)
Lager6.304
EEPROM
EEPROM
1Kb (128 x 8)
I2C
400kHz
10ms
900ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
S70FL01GSAGBHBC10
Cypress Semiconductor Corp

NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager5.696
FLASH
FLASH - NOR
1Gb (128M x 8)
SPI - Quad I/O
133MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
-
-
-
SST38VF6401-90-5C-B3KE
Microchip Technology

IC FLASH 64MBIT 90NS 48TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 64Mb (4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10µs
  • Access Time: 90ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA
Paket: 48-TFBGA
Lager6.288
FLASH
FLASH
64Mb (4M x 16)
Parallel
-
10µs
90ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
48-TFBGA
48-TFBGA
CY62128EV30LL-55SXET
Cypress Semiconductor Corp

IC SRAM 1MBIT 55NS 32SOIC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 2.2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-SOIC (0.445", 11.30mm Width)
  • Supplier Device Package: 32-SOIC
Paket: 32-SOIC (0.445", 11.30mm Width)
Lager2.416
SRAM
SRAM - Asynchronous
1Mb (128K x 8)
Parallel
-
55ns
55ns
2.2 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
32-SOIC (0.445", 11.30mm Width)
32-SOIC
11LC010-E/P
Microchip Technology

IC EEPROM 1KBIT 100KHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (128 x 8)
  • Memory Interface: Single Wire
  • Clock Frequency: 100kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
Paket: 8-DIP (0.300", 7.62mm)
Lager5.232
EEPROM
EEPROM
1Kb (128 x 8)
Single Wire
100kHz
5ms
-
2.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
BR24G02NUX-3ATTR
Rohm Semiconductor

IC EEPROM 2KBIT 1MHZ 8VSON

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.6 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: VSON008X2030
Paket: 8-UFDFN Exposed Pad
Lager5.456
EEPROM
EEPROM
2Kb (256 x 8)
I2C
1MHz
5ms
-
1.6 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-UFDFN Exposed Pad
VSON008X2030
S25FS128SDSBHM203
Cypress Semiconductor Corp

IC NOR

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-BGA (8x6)
Paket: 24-TBGA
Lager4.128
-
-
-
-
-
-
-
-
-
Surface Mount
24-TBGA
24-BGA (8x6)
MSP14LV320-E1-TH-001
Cypress Semiconductor Corp

IC MEMORY FLASH NOR

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager6.752
-
-
-
-
-
-
-
-
-
-
-
-
IS41C16100D-50KLI
ISSI, Integrated Silicon Solution Inc

IC DRAM 16M PARALLEL 42SOJ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM - EDO
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 84ns
  • Access Time: 25ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 42-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 42-SOJ
Paket: 42-BSOJ (0.400", 10.16mm Width)
Lager6.112
DRAM
DRAM - EDO
16Mb (1M x 16)
Parallel
-
84ns
25ns
4.5V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
42-BSOJ (0.400", 10.16mm Width)
42-SOJ
UPD44164185BF5-E33Y-EQ3-A
Renesas Electronics Corporation

DDR SRAM, 1MX18, 0.45NS

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
N08L6182AB7I
onsemi

Standard SRAM, 512KX16, 85ns, CM

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 8Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 85 ns
  • Voltage - Supply: 1.65V ~ 2.2V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-LFBGA
  • Supplier Device Package: 48-BGA (6x8)
Paket: -
Request a Quote
SRAM
SRAM - Asynchronous
8Mbit
Parallel
-
70ns
85 ns
1.65V ~ 2.2V
-40°C ~ 85°C (TA)
Surface Mount
48-LFBGA
48-BGA (6x8)
MT29F1T08EELKEJ4-M-K-TR
Micron Technology Inc.

TLC 1T 128GX8 VBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
MT53D384M32D2DS-046-AAT-E
Micron Technology Inc.

IC DRAM 12GBIT 2.133GHZ 200WFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 12Gbit
  • Memory Interface: -
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-WFBGA
  • Supplier Device Package: 200-WFBGA (10x14.5)
Paket: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4
12Gbit
-
2.133 GHz
-
-
1.1V
-40°C ~ 105°C (TC)
Surface Mount
200-WFBGA
200-WFBGA (10x14.5)
IS49NLC18320A-25EWBLI
ISSI, Integrated Silicon Solution Inc

RLDRAM2 Memory, 576Mbit, x18, Co

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: RLDRAM 2
  • Memory Size: 576Mbit
  • Memory Interface: HSTL
  • Clock Frequency: 400 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 15 ns
  • Voltage - Supply: 1.7V ~ 1.9V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 144-TFBGA
  • Supplier Device Package: 144-TWBGA (11x18.5)
Paket: -
Request a Quote
DRAM
RLDRAM 2
576Mbit
HSTL
400 MHz
-
15 ns
1.7V ~ 1.9V
-40°C ~ 85°C (TA)
Surface Mount
144-TFBGA
144-TWBGA (11x18.5)
IS61WV20488FBLL-10T2LI-TR
ISSI, Integrated Silicon Solution Inc

16Mb,High-Speed,Async,2Mbx8,10ns

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 16Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10 ns
  • Voltage - Supply: 2.4V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
Paket: -
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SRAM
SRAM - Asynchronous
16Mbit
Parallel
-
10ns
10 ns
2.4V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
NDL26PFG-9MET-TR
Insignis Technology Corporation

IC DRAM 2GBIT PAR 96FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 2Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 933 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (9x13)
Paket: -
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DRAM
SDRAM - DDR3L
2Gbit
Parallel
933 MHz
15ns
20 ns
1.283V ~ 1.45V
0°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (9x13)