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Speicher

Aufzeichnungen 62.144
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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
AK6508CS
AKM Semiconductor Inc.

IC EEPROM 16KB SER SPI 8WLCSP

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager3.360
-
-
-
-
-
-
-
-
-
-
-
-
PC28F256M29EWLB TR
Micron Technology Inc.

IC FLASH 256MBIT 100NS 64FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (32M x 8, 16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (11x13)
Paket: 64-LBGA
Lager5.680
FLASH
FLASH - NOR
256Mb (32M x 8, 16M x 16)
Parallel
-
100ns
100ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-FBGA (11x13)
hot W972GG6JB-25
Winbond Electronics

IC SDRAM 2GBIT 400MHZ 84BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 400ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 84-TFBGA
  • Supplier Device Package: 84-WBGA (11x13)
Paket: 84-TFBGA
Lager16.800
DRAM
SDRAM - DDR2
2Gb (128M x 16)
Parallel
200MHz
15ns
400ps
1.7 V ~ 1.9 V
0°C ~ 85°C (TC)
Surface Mount
84-TFBGA
84-WBGA (11x13)
hot STK14C88-3NF35
Cypress Semiconductor Corp

IC NVSRAM 256KBIT 35NS 32SOIC

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 32-SOIC
Paket: 32-SOIC (0.295", 7.50mm Width)
Lager6.848
NVSRAM
NVSRAM (Non-Volatile SRAM)
256Kb (32K x 8)
Parallel
-
35ns
35ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
32-SOIC (0.295", 7.50mm Width)
32-SOIC
AT49F040A-55TI-T
Microchip Technology

IC FLASH 4MBIT 55NS 32TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 40µs
  • Access Time: 55ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 32-TSOP
Paket: 32-TFSOP (0.724", 18.40mm Width)
Lager2.752
FLASH
FLASH
4Mb (512K x 8)
Parallel
-
40µs
55ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
32-TFSOP (0.724", 18.40mm Width)
32-TSOP
AT24C16AN-10SU-1.8
Microchip Technology

IC EEPROM 16KBIT 400KHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 4.5µs
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager2.112
EEPROM
EEPROM
16Kb (2K x 8)
I2C
400kHz
5ms
4.5µs
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MTFC32GJWDQ-4L AIT Z TR
Micron Technology Inc.

IC FLASH 256GBIT 100LBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 256Gb (32G x 8)
  • Memory Interface: MMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager7.440
FLASH
FLASH - NAND
256Gb (32G x 8)
MMC
-
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
MT53B192M32D1Z0AMWC1 TR
Micron Technology Inc.

IC SDRAM 6GBIT DIE

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 6Gb (192M x 32)
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: 0°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager5.328
DRAM
SDRAM - Mobile LPDDR4
6Gb (192M x 32)
-
-
-
-
1.1V
0°C ~ 85°C (TC)
-
-
-
MR0A08BYS35R
Everspin Technologies Inc.

IC MRAM 1MBIT 35NS 44TSOP

  • Memory Type: Non-Volatile
  • Memory Format: RAM
  • Technology: MRAM (Magnetoresistive RAM)
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP2
Paket: 44-TSOP (0.400", 10.16mm Width)
Lager7.616
RAM
MRAM (Magnetoresistive RAM)
1Mb (128K x 8)
Parallel
-
35ns
35ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP2
S72XS256RE0AHBH23
Cypress Semiconductor Corp

IC FLASH NOR 133MCP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH, DRAM
  • Memory Size: 256Mbit Flash, 2565Mbit DDR DRAM
  • Memory Interface: Parallel
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager2.832
FLASH, RAM
FLASH, DRAM
256Mbit Flash, 2565Mbit DDR DRAM
Parallel
108MHz
-
-
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
-
-
-
N25Q064A11ESEA0F TR
Micron Technology Inc.

IC FLASH 64MBIT 108MHZ 8SO

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mb (16M x 4)
  • Memory Interface: SPI
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: 8ms, 5ms
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 2 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SO W
Paket: 8-SOIC (0.209", 5.30mm Width)
Lager4.768
FLASH
FLASH - NOR
64Mb (16M x 4)
SPI
108MHz
8ms, 5ms
-
1.7 V ~ 2 V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SO W
34LC02-E/P
Microchip Technology

IC EEPROM 2KBIT 1MHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 400ns
  • Voltage - Supply: 2.2 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
Paket: 8-DIP (0.300", 7.62mm)
Lager6.560
EEPROM
EEPROM
2Kb (256 x 8)
I2C
1MHz
5ms
400ns
2.2 V ~ 5.5 V
-40°C ~ 125°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
93C56CT-I/MC
Microchip Technology

IC EEPROM 2KBIT 3MHZ 8DFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8, 128 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 3MHz
  • Write Cycle Time - Word, Page: 2ms
  • Access Time: -
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VFDFN Exposed Pad
  • Supplier Device Package: 8-DFN (2x3)
Paket: 8-VFDFN Exposed Pad
Lager5.072
EEPROM
EEPROM
2Kb (256 x 8, 128 x 16)
SPI
3MHz
2ms
-
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-VFDFN Exposed Pad
8-DFN (2x3)
IS61WV204816ALL-10TLI
ISSI, Integrated Silicon Solution Inc

IC SRAM 32M PARALLEL 48TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 32Mb (2M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 1.65 V ~ 2.2 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
Paket: 48-TFSOP (0.724", 18.40mm Width)
Lager4.128
SRAM
SRAM - Asynchronous
32Mb (2M x 16)
Parallel
-
10ns
10ns
1.65 V ~ 2.2 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
S99F032B
Cypress Semiconductor Corp

IC MEMORY NOR

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager7.136
-
-
-
-
-
-
-
-
-
-
-
-
71V3576YS133PFG
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT PARALLEL 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, SDR
  • Memory Size: 4.5Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 4.2 ns
  • Voltage - Supply: 3.135V ~ 3.465V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
Paket: -
Request a Quote
SRAM
SRAM - Synchronous, SDR
4.5Mbit
Parallel
133 MHz
-
4.2 ns
3.135V ~ 3.465V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
M30042040054X0ISAY
Renesas Electronics Corporation

IC RAM 4MBIT 54MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: RAM
  • Technology: MRAM (Magnetoresistive RAM)
  • Memory Size: 4Mbit
  • Memory Interface: -
  • Clock Frequency: 54 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
Paket: -
Request a Quote
RAM
MRAM (Magnetoresistive RAM)
4Mbit
-
54 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 85°C
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIC
MT53D1024M32D4DT-053-WT-ES-D-TR
Micron Technology Inc.

IC DRAM 32GBIT 1.866GHZ 200VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 32Gbit
  • Memory Interface: -
  • Clock Frequency: 1.866 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-VFBGA
  • Supplier Device Package: 200-VFBGA (10x14.5)
Paket: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4
32Gbit
-
1.866 GHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
200-VFBGA
200-VFBGA (10x14.5)
BY25Q128ASWIG-R
BYTe Semiconductor

128 MBIT, 3.0V (2.7V TO 3.6V), -

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 128Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 108 MHz
  • Write Cycle Time - Word, Page: 50µs, 2.4ms
  • Access Time: 7 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (5x6)
Paket: -
Request a Quote
FLASH
FLASH - NOR (SLC)
128Mbit
SPI - Quad I/O
108 MHz
50µs, 2.4ms
7 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (5x6)
W29N02KZBIBF-TR
Winbond Electronics

IC FLASH 2GBIT PARALLEL 63VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 2Gbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 22 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-VFBGA (9x11)
Paket: -
Request a Quote
FLASH
FLASH - NAND (SLC)
2Gbit
Parallel
-
25ns
22 ns
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
63-VFBGA
63-VFBGA (9x11)
S25FL128SAGBAEA03
Infineon Technologies

STD SPI

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 128Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 750µs
  • Access Time: 6.5 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-BGA (8x6)
Paket: -
Request a Quote
FLASH
FLASH - NOR (SLC)
128Mbit
SPI - Quad I/O
133 MHz
750µs
6.5 ns
2.7V ~ 3.6V
-55°C ~ 125°C (TA)
Surface Mount
24-TBGA
24-BGA (8x6)
IS42S32400J-7TL-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 128MBIT PAR 86TSOP II

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mbit
  • Memory Interface: LVTTL
  • Clock Frequency: 143 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 86-TFSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 86-TSOP II
Paket: -
Request a Quote
DRAM
SDRAM
128Mbit
LVTTL
143 MHz
-
5.4 ns
3V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
86-TFSOP (0.400", 10.16mm Width)
86-TSOP II
7005L12PF8
Renesas Electronics Corporation

IC RAM 8K X 8 DUAL PORT

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 64Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (14x14)
Paket: -
Request a Quote
SRAM
SRAM - Dual Port, Asynchronous
64Kbit
Parallel
-
12ns
12 ns
4.5V ~ 5.5V
0°C ~ 70°C (TA)
Surface Mount
64-LQFP
64-TQFP (14x14)
CY7C1018CV33-10VC
Cypress Semiconductor Corp

IC SRAM 1MBIT PARALLEL 32SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-BSOJ (0.300", 7.62mm Width)
  • Supplier Device Package: 32-SOJ
Paket: -
Request a Quote
SRAM
SRAM - Asynchronous
1Mbit
Parallel
-
10ns
10 ns
3V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
32-BSOJ (0.300", 7.62mm Width)
32-SOJ
W632GU8NB-15-TR
Winbond Electronics

IC DRAM 2GBIT PAR 78VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 2Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 667 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-VFBGA
  • Supplier Device Package: 78-VFBGA (8x10.5)
Paket: -
Request a Quote
DRAM
SDRAM - DDR3L
2Gbit
Parallel
667 MHz
15ns
20 ns
1.283V ~ 1.45V
0°C ~ 95°C (TC)
Surface Mount
78-VFBGA
78-VFBGA (8x10.5)
MT62F1536M32D4DS-023-WT-B
Micron Technology Inc.

LPDDR5 48G 1.5GX32 FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR5
  • Memory Size: 48Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 4.266 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 200-WFBGA
  • Supplier Device Package: 200-WFBGA (10x14.5)
Paket: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR5
48Gbit
Parallel
4.266 GHz
-
-
-
-
Surface Mount
200-WFBGA
200-WFBGA (10x14.5)
CY7C106B-20VCT
Cypress Semiconductor Corp

IC SRAM 1MBIT PARALLEL 28SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-BSOJ (0.300", 7.62mm Width)
  • Supplier Device Package: 28-SOJ
Paket: -
Request a Quote
SRAM
SRAM - Asynchronous
1Mbit
Parallel
-
20ns
20 ns
4.5V ~ 5.5V
0°C ~ 70°C (TA)
Surface Mount
28-BSOJ (0.300", 7.62mm Width)
28-SOJ
W25R64JWZPIQ-TR
Winbond Electronics

IC FLASH 64MBIT SPI 104MHZ 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mbit
  • Memory Interface: SPI
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (6x5)
Paket: -
Request a Quote
FLASH
FLASH - NOR
64Mbit
SPI
104 MHz
-
-
1.7V ~ 1.95V
-40°C ~ 85°C
Surface Mount
8-WDFN Exposed Pad
8-WSON (6x5)