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PMIC - Gate-Treiber

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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
ISL89165FRTCZ
Intersil

MOSFET DRIVER 2CH 6A 8TDFN

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 7.5 V ~ 16 V
  • Logic Voltage - VIL, VIH: 2.4V, 9.6V
  • Current - Peak Output (Source, Sink): 6A, 6A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 20ns, 20ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VFDFN Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
Paket: 8-VFDFN Exposed Pad
Lager7.424
Independent
2
N-Channel MOSFET
7.5 V ~ 16 V
2.4V, 9.6V
6A, 6A
Inverting, Non-Inverting
-
20ns, 20ns
-40°C ~ 125°C (TJ)
Surface Mount
8-VFDFN Exposed Pad
8-SOIC-EP
IXDD430MCI
IXYS

IC DRVR MOSF/IGBT 30A TO220-5

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 8.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3.5V
  • Current - Peak Output (Source, Sink): 30A, 30A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 18ns, 16ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-5
  • Supplier Device Package: TO-220-5
Paket: TO-220-5
Lager7.872
Single
1
IGBT, N-Channel, P-Channel MOSFET
8.5 V ~ 35 V
0.8V, 3.5V
30A, 30A
Non-Inverting
-
18ns, 16ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-5
TO-220-5
IX2D11S7T/R
IXYS

IC DRVR HALF BRIDGE GATE 14-SOIC

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: -
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
Paket: 14-SOIC (0.154", 3.90mm Width)
Lager2.784
-
-
-
-
-
-
-
-
-
-
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SOIC
hot IXDF402SI
IXYS

DUAL 2AMP ULTRAFAST MOSFET 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 8ns, 8ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager199.896
Independent
2
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
2A, 2A
Inverting, Non-Inverting
-
8ns, 8ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
ISL6612IR-T
Intersil

IC MOSFET DRVR SYNC BUCK 10-DFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10.8 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.25A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 26ns, 18ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-VFDFN Exposed Pad
  • Supplier Device Package: 10-DFN (3x3)
Paket: 10-VFDFN Exposed Pad
Lager5.376
Synchronous
2
N-Channel MOSFET
10.8 V ~ 13.2 V
-
1.25A, 2A
Non-Inverting
36V
26ns, 18ns
-40°C ~ 125°C (TJ)
Surface Mount
10-VFDFN Exposed Pad
10-DFN (3x3)
ISL6612BEIB
Intersil

IC MOSFET DRVR SYNC BUCK 8EPSOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 7 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.25A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 26ns, 18ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
Paket: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Lager4.736
Synchronous
2
N-Channel MOSFET
7 V ~ 13.2 V
-
1.25A, 2A
Non-Inverting
36V
26ns, 18ns
-40°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
TC428EUA713
Microchip Technology

IC MOSFET DVR 1.5A DUAL HS 8MSOP

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.5A, 1.5A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 30ns, 30ns
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
Paket: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Lager4.096
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
1.5A, 1.5A
Inverting, Non-Inverting
-
30ns, 30ns
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
1EBN1001AEXUMA1
Infineon Technologies

IC IGBT DVR 1200V DSO14

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 13 V ~ 18 V
  • Logic Voltage - VIL, VIH: 1.5V, 3.5V
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): 1200V
  • Rise / Fall Time (Typ): 50ns, 90ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-14
Paket: 14-SOIC (0.154", 3.90mm Width)
Lager2.608
Single
1
IGBT, N-Channel, P-Channel MOSFET
13 V ~ 18 V
1.5V, 3.5V
-
-
1200V
50ns, 90ns
-40°C ~ 150°C (TJ)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
PG-DSO-14
hot UCC27322DG4
Texas Instruments

IC MOSFET DRIVER SGL HS 9A 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4 V ~ 15 V
  • Logic Voltage - VIL, VIH: 1.1V, 2.7V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 20ns, 20ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager5.568
Single
1
N-Channel, P-Channel MOSFET
4 V ~ 15 V
1.1V, 2.7V
9A, 9A
Non-Inverting
-
20ns, 20ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot LM5109BMA
Texas Instruments

IC DVR HALF-BRIDGE 90V 1A 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 14 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.2V
  • Current - Peak Output (Source, Sink): 1A, 1A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 108V
  • Rise / Fall Time (Typ): 15ns, 15ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager166.680
Independent
2
N-Channel MOSFET
8 V ~ 14 V
0.8V, 2.2V
1A, 1A
Non-Inverting
108V
15ns, 15ns
-40°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
ZL1505ALNFT6
Intersil

IC MOSFET DVR STP-DN SYNC 10DFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 7.5 V
  • Logic Voltage - VIL, VIH: 1.7V, 3.4V
  • Current - Peak Output (Source, Sink): 3.2A, 3.2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 30V
  • Rise / Fall Time (Typ): 5.3ns, 4.8ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-VFDFN Exposed Pad
  • Supplier Device Package: 10-DFN (3x3)
Paket: 10-VFDFN Exposed Pad
Lager2.400
Independent
2
N-Channel MOSFET
4.5 V ~ 7.5 V
1.7V, 3.4V
3.2A, 3.2A
Non-Inverting
30V
5.3ns, 4.8ns
-40°C ~ 125°C (TJ)
Surface Mount
10-VFDFN Exposed Pad
10-DFN (3x3)
hot ISL6208CRZ
Intersil

IC MOSFET DRVR SYNC BUCK 8-QFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Logic Voltage - VIL, VIH: 0.5V, 2V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 33V
  • Rise / Fall Time (Typ): 8ns, 8ns
  • Operating Temperature: -10°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VQFN Exposed Pad
  • Supplier Device Package: 8-QFN (3x3)
Paket: 8-VQFN Exposed Pad
Lager362.184
Synchronous
2
N-Channel MOSFET
4.5 V ~ 5.5 V
0.5V, 2V
2A, 2A
Non-Inverting
33V
8ns, 8ns
-10°C ~ 125°C (TJ)
Surface Mount
8-VQFN Exposed Pad
8-QFN (3x3)
hot 1SP0635V2M1-33
Power Integrations

IC SINGLE GATE DRIVER 35A

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT
  • Voltage - Supply: 14.5 V ~ 15.5 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 35A, 35A
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): 3300V
  • Rise / Fall Time (Typ): 9ns, 30ns
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager11.892
Single
1
IGBT
14.5 V ~ 15.5 V
-
35A, 35A
-
3300V
9ns, 30ns
-40°C ~ 85°C (TA)
-
-
-
hot MAX627ESA+
Maxim Integrated

IC DRIVER MOSFET DUAL 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 20ns
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager9.456
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2V
2A, 2A
Non-Inverting
-
25ns, 20ns
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
UCC27512DRST
Texas Instruments

IC GATE DVR LOW SIDE 1CH 6WSON

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 1V, 2.4V
  • Current - Peak Output (Source, Sink): 4A, 8A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 8ns, 7ns
  • Operating Temperature: -40°C ~ 140°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-SON-EP (3x3)
Paket: 6-WDFN Exposed Pad
Lager15.876
Single
1
IGBT, N-Channel MOSFET
4.5 V ~ 18 V
1V, 2.4V
4A, 8A
Inverting, Non-Inverting
-
8ns, 7ns
-40°C ~ 140°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-SON-EP (3x3)
hot TC4469COE
Microchip Technology

IC MOSFET DVR AND/INV 16SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 4
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.2A, 1.2A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 15ns, 15ns
  • Operating Temperature: 0°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
Paket: 16-SOIC (0.295", 7.50mm Width)
Lager19.080
Independent
4
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
1.2A, 1.2A
Inverting, Non-Inverting
-
15ns, 15ns
0°C ~ 150°C (TJ)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
ISL2100AAR3Z
Renesas Electronics America

IC DVR HALF-BRDG HF 100V 2A 9DFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 9 V ~ 14 V
  • Logic Voltage - VIL, VIH: 3.7V, 7.4V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 114V
  • Rise / Fall Time (Typ): 10ns, 10ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 9-VFDFN Exposed Pad
  • Supplier Device Package: 9-DFN-EP (3x3)
Paket: 9-VFDFN Exposed Pad
Lager7.032
Independent
2
N-Channel MOSFET
9 V ~ 14 V
3.7V, 7.4V
2A, 2A
Non-Inverting
114V
10ns, 10ns
-40°C ~ 125°C (TJ)
Surface Mount
9-VFDFN Exposed Pad
9-DFN-EP (3x3)
ISL89164FBEAZ
Renesas Electronics America

MOSFET DRIVER 2CH 3.3V 6A 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 16 V
  • Logic Voltage - VIL, VIH: 1.22V, 2.08V
  • Current - Peak Output (Source, Sink): 6A, 6A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 20ns, 20ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
Paket: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Lager17.106
Independent
2
N-Channel MOSFET
4.5 V ~ 16 V
1.22V, 2.08V
6A, 6A
Inverting
-
20ns, 20ns
-40°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
HIP2101IR4
Renesas Electronics America

IC DRVR HALF BRIDGE 100V 12-DFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 9 V ~ 14 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.2V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 114V
  • Rise / Fall Time (Typ): 10ns, 10ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-VFDFN Exposed Pad
  • Supplier Device Package: 12-DFN (4x4)
Paket: 12-VFDFN Exposed Pad
Lager6.144
Independent
2
N-Channel MOSFET
9 V ~ 14 V
0.8V, 2.2V
2A, 2A
Non-Inverting
114V
10ns, 10ns
-55°C ~ 150°C (TJ)
Surface Mount
12-VFDFN Exposed Pad
12-DFN (4x4)
2SD316EI-12
Power Integrations

GATE DVR P&P SCALE-1

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: -
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager7.648
-
-
-
-
-
-
-
-
-
-
-
-
-
MCP14A0901-E/MS
Microchip Technology

9.0A SINGLE INV MOSFET DRIVER

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5V ~ 18V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 22ns, 22ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
Paket: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Lager9.096
Synchronous
2
N-Channel, P-Channel MOSFET
4.5V ~ 18V
0.8V, 2V
9A, 9A
Inverting
-
22ns, 22ns
-40°C ~ 125°C (TA)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
UCC27322MDEP
Texas Instruments

IC POWER MANAGEMENT

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4V ~ 15V
  • Logic Voltage - VIL, VIH: 1V, 2V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 20ns, 20ns
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paket: -
Lager2.700
Single
1
N-Channel, P-Channel MOSFET
4V ~ 15V
1V, 2V
9A, 9A
Non-Inverting
-
20ns, 20ns
-55°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
2ED21064S06JXUMA1
Infineon Technologies

IC GATE DRIVER DSO-14

  • Driven Configuration: High-Side and Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10V ~ 20V
  • Logic Voltage - VIL, VIH: 1.1V, 1.7V
  • Current - Peak Output (Source, Sink): 290mA, 700mA
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): 20 V
  • Rise / Fall Time (Typ): 100ns, 35ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-14
Paket: -
Lager15.000
Independent
2
IGBT, N-Channel MOSFET
10V ~ 20V
1.1V, 1.7V
290mA, 700mA
-
20 V
100ns, 35ns
-40°C ~ 125°C (TA)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
PG-DSO-14
UC1708L883B
Texas Instruments

3-A/3-A DUAL-CHANNEL GATE DRIVER

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 5V ~ 35V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 3A, 3A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 25ns
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 20-CLCC
  • Supplier Device Package: 20-LCCC (8.89x8.89)
Paket: -
Request a Quote
Independent
2
N-Channel, P-Channel MOSFET
5V ~ 35V
0.8V, 2V
3A, 3A
Non-Inverting
-
25ns, 25ns
-55°C ~ 125°C (TA)
Surface Mount
20-CLCC
20-LCCC (8.89x8.89)
IHD660NC1
Power Integrations

IC GATE DRVR HALF-BRIDGE MODULE

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 14V ~ 16V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 100ns, 80ns
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 36-DIP Module, 24 Leads
  • Supplier Device Package: Module
Paket: -
Request a Quote
Independent
2
IGBT, N-Channel MOSFET
14V ~ 16V
-
-
Non-Inverting
-
100ns, 80ns
-40°C ~ 85°C (TA)
Through Hole
36-DIP Module, 24 Leads
Module
ADP3110A0001RZR
onsemi

2 12V FET DRVR W/OUT DIS

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: -
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
HIP2211FRTZ-T7A
Renesas Electronics Corporation

100V/4A HI/LI HALF BRIDGE DRIVER

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 6V ~ 18V
  • Logic Voltage - VIL, VIH: 1.47V, 1.84V
  • Current - Peak Output (Source, Sink): 3A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 115 V
  • Rise / Fall Time (Typ): 435ns, 365ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-WDFN Exposed Pad
  • Supplier Device Package: 10-TDFN (4x4)
Paket: -
Lager1.431
Synchronous
2
N-Channel MOSFET
6V ~ 18V
1.47V, 1.84V
3A, 4A
Non-Inverting
115 V
435ns, 365ns
-40°C ~ 125°C (TJ)
Surface Mount
10-WDFN Exposed Pad
10-TDFN (4x4)
2ED2101S06FXUMA1
Infineon Technologies

LEVEL SHIFT SOI

  • Driven Configuration: High-Side and Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10V ~ 20V
  • Logic Voltage - VIL, VIH: 1.1V, 1.7V
  • Current - Peak Output (Source, Sink): 290mA, 700mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 650 V
  • Rise / Fall Time (Typ): 70ns, 35ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8-69
Paket: -
Lager13.521
Independent
2
IGBT, N-Channel MOSFET
10V ~ 20V
1.1V, 1.7V
290mA, 700mA
Non-Inverting
650 V
70ns, 35ns
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8-69