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Microsemi Corporation Produkte - Dioden - Gleichrichter - Arrays

Aufzeichnungen 484
Page  7/17
Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io) (per Diode)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Operating Temperature - Junction
Mounting Type
Package / Case
Supplier Device Package
JANTX1N6660DT1
Microsemi Corporation

DIODE ARRAY SCHOTTKY 45V TO254AA

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 45V
  • Operating Temperature - Junction: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-254-3, TO-254AA (Straight Leads)
  • Supplier Device Package: TO-254AA
Paket: TO-254-3, TO-254AA (Straight Leads)
Lager2.640
Schottky
45V
15A
750mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 45V
-65°C ~ 150°C
Through Hole
TO-254-3, TO-254AA (Straight Leads)
TO-254AA
JANTX1N6660CCT1
Microsemi Corporation

DIODE ARRAY SCHOTTKY 45V TO254AA

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 45V
  • Operating Temperature - Junction: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-254-3, TO-254AA (Straight Leads)
  • Supplier Device Package: TO-254AA
Paket: TO-254-3, TO-254AA (Straight Leads)
Lager2.384
Schottky
45V
15A
750mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 45V
-65°C ~ 150°C
Through Hole
TO-254-3, TO-254AA (Straight Leads)
TO-254AA
JANTX1N6660CAT1
Microsemi Corporation

DIODE ARRAY SCHOTTKY 45V TO254AA

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 45V
  • Operating Temperature - Junction: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-254-3, TO-254AA (Straight Leads)
  • Supplier Device Package: TO-254AA
Paket: TO-254-3, TO-254AA (Straight Leads)
Lager5.312
Schottky
45V
15A
750mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 45V
-65°C ~ 150°C
Through Hole
TO-254-3, TO-254AA (Straight Leads)
TO-254AA
JAN1N6660
Microsemi Corporation

DIODE ARRAY SCHOTTKY 45V TO254AA

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 45V
  • Operating Temperature - Junction: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-254-3, TO-254AA (Straight Leads)
  • Supplier Device Package: TO-254AA
Paket: TO-254-3, TO-254AA (Straight Leads)
Lager7.072
Schottky
45V
15A
750mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 45V
-65°C ~ 150°C
Through Hole
TO-254-3, TO-254AA (Straight Leads)
TO-254AA
JAN1N6660DT1
Microsemi Corporation

DIODE ARRAY SCHOTTKY 45V TO254AA

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 45V
  • Operating Temperature - Junction: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-254-3, TO-254AA (Straight Leads)
  • Supplier Device Package: TO-254AA
Paket: TO-254-3, TO-254AA (Straight Leads)
Lager4.192
Schottky
45V
15A
750mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 45V
-65°C ~ 150°C
Through Hole
TO-254-3, TO-254AA (Straight Leads)
TO-254AA
JAN1N6660CCT1
Microsemi Corporation

DIODE ARRAY SCHOTTKY 45V TO254AA

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 45V
  • Operating Temperature - Junction: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-254-3, TO-254AA (Straight Leads)
  • Supplier Device Package: TO-254AA
Paket: TO-254-3, TO-254AA (Straight Leads)
Lager4.032
Schottky
45V
15A
750mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 45V
-65°C ~ 150°C
Through Hole
TO-254-3, TO-254AA (Straight Leads)
TO-254AA
JAN1N6660CAT1
Microsemi Corporation

DIODE ARRAY SCHOTTKY 45V TO254AA

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 45V
  • Operating Temperature - Junction: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-254-3, TO-254AA (Straight Leads)
  • Supplier Device Package: TO-254AA
Paket: TO-254-3, TO-254AA (Straight Leads)
Lager2.032
Schottky
45V
15A
750mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 45V
-65°C ~ 150°C
Through Hole
TO-254-3, TO-254AA (Straight Leads)
TO-254AA
APTDF400KK170G
Microsemi Corporation

DIODE MODULE 1.7KV 480A SP6

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1700V
  • Current - Average Rectified (Io) (per Diode): 480A
  • Voltage - Forward (Vf) (Max) @ If: 2.5V @ 400A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 572ns
  • Current - Reverse Leakage @ Vr: 750µA @ 1700V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: LP4
  • Supplier Device Package: SP6
Paket: LP4
Lager5.760
Standard
1700V
480A
2.5V @ 400A
Standard Recovery >500ns, > 200mA (Io)
572ns
750µA @ 1700V
-
Chassis Mount
LP4
SP6
APT2X60DC120J
Microsemi Corporation

DIODE MODULE 1.2KV 60A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 60A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 1.2mA @ 1200V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
Paket: SOT-227-4, miniBLOC
Lager3.952
Silicon Carbide Schottky
1200V
60A
1.8V @ 60A
No Recovery Time > 500mA (Io)
0ns
1.2mA @ 1200V
-
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
CPT40145
Microsemi Corporation

DIODE MODULE 45V 200A MD3CC

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io) (per Diode): 200A
  • Voltage - Forward (Vf) (Max) @ If: 570mV @ 200A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10mA @ 45V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: MD3CC
  • Supplier Device Package: MD3CC
Paket: MD3CC
Lager4.672
Schottky
45V
200A
570mV @ 200A
Fast Recovery =< 500ns, > 200mA (Io)
-
10mA @ 45V
-
Chassis Mount
MD3CC
MD3CC
APT2X50DC120J
Microsemi Corporation

DIODE MODULE 1.2KV 50A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 1mA @ 1200V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
Paket: SOT-227-4, miniBLOC
Lager5.984
Silicon Carbide Schottky
1200V
50A
1.8V @ 50A
No Recovery Time > 500mA (Io)
0ns
1mA @ 1200V
-
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
APTDF400AK170G
Microsemi Corporation

DIODE MODULE 1.7KV 480A SP6

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1700V
  • Current - Average Rectified (Io) (per Diode): 480A
  • Voltage - Forward (Vf) (Max) @ If: 2.5V @ 400A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 572ns
  • Current - Reverse Leakage @ Vr: 750µA @ 1700V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: LP4
  • Supplier Device Package: SP6
Paket: LP4
Lager4.912
Standard
1700V
480A
2.5V @ 400A
Standard Recovery >500ns, > 200mA (Io)
572ns
750µA @ 1700V
-
Chassis Mount
LP4
SP6
APTDF400AA170G
Microsemi Corporation

DIODE MODULE 1.7KV 480A SP6

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1700V
  • Current - Average Rectified (Io) (per Diode): 480A
  • Voltage - Forward (Vf) (Max) @ If: 2.5V @ 400A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 572ns
  • Current - Reverse Leakage @ Vr: 750µA @ 1700V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: LP4
  • Supplier Device Package: SP6
Paket: LP4
Lager5.312
Standard
1700V
480A
2.5V @ 400A
Standard Recovery >500ns, > 200mA (Io)
572ns
750µA @ 1700V
-
Chassis Mount
LP4
SP6
APT2X40DC120J
Microsemi Corporation

DIODE MODULE 1.2KV 40A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 800µA @ 1200V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
Paket: SOT-227-4, miniBLOC
Lager7.024
Silicon Carbide Schottky
1200V
40A
1.8V @ 40A
No Recovery Time > 500mA (Io)
0ns
800µA @ 1200V
-
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
APT2X41DC120J
Microsemi Corporation

DIODE MODULE 1.2KV 40A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 800µA @ 1200V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: ISOTOP
  • Supplier Device Package: SOT-227
Paket: ISOTOP
Lager2.320
Silicon Carbide Schottky
1200V
40A
1.8V @ 40A
No Recovery Time > 500mA (Io)
0ns
800µA @ 1200V
-
Chassis Mount
ISOTOP
SOT-227
APT2X41DC60J
Microsemi Corporation

DIODE MODULE 600V 40A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 800µA @ 600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: ISOTOP
  • Supplier Device Package: SOT-227
Paket: ISOTOP
Lager3.088
Silicon Carbide Schottky
600V
40A
1.8V @ 40A
No Recovery Time > 500mA (Io)
0ns
800µA @ 600V
-
Chassis Mount
ISOTOP
SOT-227
hot APTDF400AA120G
Microsemi Corporation

DIODE MODULE 1.2KV 470A SP6

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 470A
  • Voltage - Forward (Vf) (Max) @ If: 3V @ 400A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 385ns
  • Current - Reverse Leakage @ Vr: 250µA @ 1200V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: LP4
  • Supplier Device Package: SP6
Paket: LP4
Lager6.464
Standard
1200V
470A
3V @ 400A
Fast Recovery =< 500ns, > 200mA (Io)
385ns
250µA @ 1200V
-
Chassis Mount
LP4
SP6
APT2X60DC60J
Microsemi Corporation

DIODE MODULE 600V 60A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 60A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 1.2mA @ 600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
Paket: SOT-227-4, miniBLOC
Lager7.872
Silicon Carbide Schottky
600V
60A
1.8V @ 60A
No Recovery Time > 500mA (Io)
0ns
1.2mA @ 600V
-
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
APT2X61DC60J
Microsemi Corporation

DIODE MODULE 600V 60A ISOTOP

  • Diode Configuration: 2 Independent
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 60A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 1.2mA @ 600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: ISOTOP?
Paket: SOT-227-4, miniBLOC
Lager4.528
Silicon Carbide Schottky
600V
60A
1.8V @ 60A
No Recovery Time > 500mA (Io)
0ns
1.2mA @ 600V
-
Chassis Mount
SOT-227-4, miniBLOC
ISOTOP?
APTDF400KK100G
Microsemi Corporation

DIODE MODULE 1KV 500A SP6

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io) (per Diode): 500A
  • Voltage - Forward (Vf) (Max) @ If: 2.7V @ 400A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 290ns
  • Current - Reverse Leakage @ Vr: 250µA @ 1000V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: LP4
  • Supplier Device Package: SP6
Paket: LP4
Lager7.648
Standard
1000V
500A
2.7V @ 400A
Fast Recovery =< 500ns, > 200mA (Io)
290ns
250µA @ 1000V
-
Chassis Mount
LP4
SP6
APTDF400AK100G
Microsemi Corporation

DIODE MODULE 1KV 500A SP6

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io) (per Diode): 500A
  • Voltage - Forward (Vf) (Max) @ If: 2.7V @ 400A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 290ns
  • Current - Reverse Leakage @ Vr: 250µA @ 1000V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: LP4
  • Supplier Device Package: SP6
Paket: LP4
Lager5.792
Standard
1000V
500A
2.7V @ 400A
Fast Recovery =< 500ns, > 200mA (Io)
290ns
250µA @ 1000V
-
Chassis Mount
LP4
SP6
APTDF400AA100G
Microsemi Corporation

DIODE MODULE 1KV 500A SP6

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io) (per Diode): 500A
  • Voltage - Forward (Vf) (Max) @ If: 2.7V @ 400A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 290ns
  • Current - Reverse Leakage @ Vr: 250µA @ 1000V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: LP4
  • Supplier Device Package: SP6
Paket: LP4
Lager4.512
Standard
1000V
500A
2.7V @ 400A
Fast Recovery =< 500ns, > 200mA (Io)
290ns
250µA @ 1000V
-
Chassis Mount
LP4
SP6
APTDF400AK20G
Microsemi Corporation

DIODE MODULE 200V 500A SP6

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io) (per Diode): 500A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 400A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 750µA @ 200V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: LP4
  • Supplier Device Package: SP6
Paket: LP4
Lager6.768
Standard
200V
500A
1.1V @ 400A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
750µA @ 200V
-
Chassis Mount
LP4
SP6
APTDF400AA20G
Microsemi Corporation

DIODE MODULE 200V 500A SP6

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io) (per Diode): 500A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 400A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 750µA @ 200V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: LP4
  • Supplier Device Package: SP6
Paket: LP4
Lager5.360
Standard
200V
500A
1.1V @ 400A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
750µA @ 200V
-
Chassis Mount
LP4
SP6
APTDF400AK60G
Microsemi Corporation

DIODE MODULE 600V 500A SP6

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 500A
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 400A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 160ns
  • Current - Reverse Leakage @ Vr: 750µA @ 600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: LP4
  • Supplier Device Package: SP6
Paket: LP4
Lager5.440
Standard
600V
500A
2V @ 400A
Fast Recovery =< 500ns, > 200mA (Io)
160ns
750µA @ 600V
-
Chassis Mount
LP4
SP6
APTDF400AA60G
Microsemi Corporation

DIODE MODULE 600V 500A SP6

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 500A
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 400A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 160ns
  • Current - Reverse Leakage @ Vr: 750µA @ 600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: LP4
  • Supplier Device Package: SP6
Paket: LP4
Lager6.144
Standard
600V
500A
2V @ 400A
Fast Recovery =< 500ns, > 200mA (Io)
160ns
750µA @ 600V
-
Chassis Mount
LP4
SP6
APT2X21DC60J
Microsemi Corporation

DIODE MODULE 600V 20A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 400µA @ 600V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Chassis Mount
  • Package / Case: ISOTOP
  • Supplier Device Package: SOT-227
Paket: ISOTOP
Lager3.568
Silicon Carbide Schottky
600V
20A
1.8V @ 20A
No Recovery Time > 500mA (Io)
0ns
400µA @ 600V
-55°C ~ 175°C
Chassis Mount
ISOTOP
SOT-227
APT2X51DC60J
Microsemi Corporation

DIODE MODULE 600V 50A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 1mA @ 600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
Paket: SOT-227-4, miniBLOC
Lager3.248
Silicon Carbide Schottky
600V
50A
1.8V @ 50A
No Recovery Time > 500mA (Io)
0ns
1mA @ 600V
-
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
APT2X20DC120J
Microsemi Corporation

DIODE MODULE 1.2KV 20A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 400µA @ 1200V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
Paket: SOT-227-4, miniBLOC
Lager3.216
Silicon Carbide Schottky
1200V
20A
1.8V @ 20A
No Recovery Time > 500mA (Io)
0ns
400µA @ 1200V
-55°C ~ 175°C
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
APT2X21DC120J
Microsemi Corporation

DIODE MODULE 1.2KV 20A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 400µA @ 1200V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Chassis Mount
  • Package / Case: ISOTOP
  • Supplier Device Package: SOT-227
Paket: ISOTOP
Lager5.088
Silicon Carbide Schottky
1200V
20A
1.8V @ 20A
No Recovery Time > 500mA (Io)
0ns
400µA @ 1200V
-55°C ~ 175°C
Chassis Mount
ISOTOP
SOT-227