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Microsemi Corporation Produkte - Dioden - Gleichrichter - Einzeln

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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
5819SMG/TR13
Microsemi Corporation

DIODE SCHOTTKY 40V 1A DO215AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-215AA, SMB Gull Wing
  • Supplier Device Package: DO-215AA
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-215AA, SMB Gull Wing
Lager2.832
40V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 40V
-
Surface Mount
DO-215AA, SMB Gull Wing
DO-215AA
-55°C ~ 150°C
5818SMGE3/TR13
Microsemi Corporation

DIODE SCHOTTKY 30V 1A DO215AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-215AA, SMB Gull Wing
  • Supplier Device Package: DO-215AA
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-215AA, SMB Gull Wing
Lager7.552
30V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 30V
-
Surface Mount
DO-215AA, SMB Gull Wing
DO-215AA
-55°C ~ 150°C
5818SMG/TR13
Microsemi Corporation

DIODE SCHOTTKY 30V 1A DO215AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-215AA, SMB Gull Wing
  • Supplier Device Package: DO-215AA
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-215AA, SMB Gull Wing
Lager4.640
30V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 30V
-
Surface Mount
DO-215AA, SMB Gull Wing
DO-215AA
-55°C ~ 150°C
5817SMGE3/TR13
Microsemi Corporation

DIODE SCHOTTKY 20V 1A DO215AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-215AA, SMB Gull Wing
  • Supplier Device Package: DO-215AA
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-215AA, SMB Gull Wing
Lager3.392
20V
1A
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 20V
-
Surface Mount
DO-215AA, SMB Gull Wing
DO-215AA
-55°C ~ 150°C
hot 5817SMG/TR13
Microsemi Corporation

DIODE SCHOTTKY 20V 1A DO215AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-215AA, SMB Gull Wing
  • Supplier Device Package: DO-215AA
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-215AA, SMB Gull Wing
Lager87.720
20V
1A
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 20V
-
Surface Mount
DO-215AA, SMB Gull Wing
DO-215AA
-55°C ~ 150°C
HS247200
Microsemi Corporation

DIODE MODULE 200V 240A HALF-PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 240A
  • Voltage - Forward (Vf) (Max) @ If: 860mV @ 240A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 8mA @ 200V
  • Capacitance @ Vr, F: 6000pF @ 5V, 1MHz
  • Mounting Type: Chassis Mount
  • Package / Case: HALF-PAK
  • Supplier Device Package: HALF-PAK
  • Operating Temperature - Junction: -
Paket: HALF-PAK
Lager2.800
200V
240A
860mV @ 240A
Fast Recovery =< 500ns, > 200mA (Io)
-
8mA @ 200V
6000pF @ 5V, 1MHz
Chassis Mount
HALF-PAK
HALF-PAK
-
HS247180
Microsemi Corporation

DIODE MODULE 180V 240A HALF-PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 180V
  • Current - Average Rectified (Io): 240A
  • Voltage - Forward (Vf) (Max) @ If: 860mV @ 240A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 8mA @ 180V
  • Capacitance @ Vr, F: 6000pF @ 5V, 1MHz
  • Mounting Type: Chassis Mount
  • Package / Case: HALF-PAK
  • Supplier Device Package: HALF-PAK
  • Operating Temperature - Junction: -
Paket: HALF-PAK
Lager3.600
180V
240A
860mV @ 240A
Fast Recovery =< 500ns, > 200mA (Io)
-
8mA @ 180V
6000pF @ 5V, 1MHz
Chassis Mount
HALF-PAK
HALF-PAK
-
HS246150
Microsemi Corporation

DIODE MODULE 150V 240A HALF-PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 240A
  • Voltage - Forward (Vf) (Max) @ If: 860mV @ 240A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 8mA @ 150V
  • Capacitance @ Vr, F: 6000pF @ 5V, 1MHz
  • Mounting Type: Chassis Mount
  • Package / Case: HALF-PAK
  • Supplier Device Package: HALF-PAK
  • Operating Temperature - Junction: -
Paket: HALF-PAK
Lager5.184
150V
240A
860mV @ 240A
Fast Recovery =< 500ns, > 200mA (Io)
-
8mA @ 150V
6000pF @ 5V, 1MHz
Chassis Mount
HALF-PAK
HALF-PAK
-
LX2400ILG
Microsemi Corporation

DIODE GEN PURP 24V 25A 2LGA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 24V
  • Current - Average Rectified (Io): 25A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 65mV @ 10A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250µA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 2-LLGA
  • Supplier Device Package: 2-LGA (7.5x11.5)
  • Operating Temperature - Junction: -55°C ~ 225°C
Paket: 2-LLGA
Lager2.864
24V
25A (DC)
65mV @ 10A
Standard Recovery >500ns, > 200mA (Io)
-
250µA @ 20V
-
Surface Mount
2-LLGA
2-LGA (7.5x11.5)
-55°C ~ 225°C
JANTX1N649-1
Microsemi Corporation

DIODE FAST REC 600V 0.4A DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 400mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50nA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-204AH, DO-35, Axial
Lager3.968
600V
400mA
1V @ 400mA
Fast Recovery =< 500ns, > 200mA (Io)
-
50nA @ 600V
-
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 175°C
JANTX1N4938-1
Microsemi Corporation

DIODE GEN PURP 175V 100MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 175V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 100nA @ 175V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-204AH, DO-35, Axial
Lager3.872
175V
100mA
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
50ns
100nA @ 175V
-
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 175°C
JANTX1N483B
Microsemi Corporation

DIODE GEN PURP 70V 200MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 70V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25nA @ 70V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-204AH, DO-35, Axial
Lager5.072
70V
200mA
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
-
25nA @ 70V
-
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 175°C
SDM30004
Microsemi Corporation

DIODE MODULE 400V 300A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 300A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 300A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 75µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
  • Operating Temperature - Junction: -
Paket: Module
Lager5.152
400V
300A
1.1V @ 300A
Standard Recovery >500ns, > 200mA (Io)
-
75µA @ 400V
-
Chassis Mount
Module
Module
-
HU10260
Microsemi Corporation

DIODE MODULE 600V 100A HALF-PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 100A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 90ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: 275pF @ 10V, 1Mhz
  • Mounting Type: Chassis Mount
  • Package / Case: HALF-PAK
  • Supplier Device Package: HALF-PAK
  • Operating Temperature - Junction: -
Paket: HALF-PAK
Lager3.344
600V
100A
1.35V @ 100A
Fast Recovery =< 500ns, > 200mA (Io)
90ns
50µA @ 600V
275pF @ 10V, 1Mhz
Chassis Mount
HALF-PAK
HALF-PAK
-
HS18230
Microsemi Corporation

DIODE MODULE 30V 180A HALF-PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 180A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 180A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10mA @ 30V
  • Capacitance @ Vr, F: 7000pF @ 5V, 1MHz
  • Mounting Type: Chassis Mount
  • Package / Case: HALF-PAK
  • Supplier Device Package: HALF-PAK
  • Operating Temperature - Junction: -
Paket: HALF-PAK
Lager7.152
30V
180A
550mV @ 180A
Fast Recovery =< 500ns, > 200mA (Io)
-
10mA @ 30V
7000pF @ 5V, 1MHz
Chassis Mount
HALF-PAK
HALF-PAK
-
HS123100
Microsemi Corporation

DIODE MODULE 100V 120A HALF-PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 120A
  • Voltage - Forward (Vf) (Max) @ If: 910mV @ 120A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 100V
  • Capacitance @ Vr, F: 3000pF @ 5V, 1MHz
  • Mounting Type: Chassis Mount
  • Package / Case: HALF-PAK
  • Supplier Device Package: HALF-PAK
  • Operating Temperature - Junction: -
Paket: HALF-PAK
Lager4.752
100V
120A
910mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
3mA @ 100V
3000pF @ 5V, 1MHz
Chassis Mount
HALF-PAK
HALF-PAK
-
HS243100
Microsemi Corporation

DIODE MODULE 100V 240A HALF-PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 240A
  • Voltage - Forward (Vf) (Max) @ If: 860mV @ 240A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 8mA @ 100V
  • Capacitance @ Vr, F: 6400pF @ 5V, 1MHz
  • Mounting Type: Chassis Mount
  • Package / Case: HALF-PAK
  • Supplier Device Package: HALF-PAK
  • Operating Temperature - Junction: -
Paket: HALF-PAK
Lager3.648
100V
240A
860mV @ 240A
Fast Recovery =< 500ns, > 200mA (Io)
-
8mA @ 100V
6400pF @ 5V, 1MHz
Chassis Mount
HALF-PAK
HALF-PAK
-
HS24045
Microsemi Corporation

DIODE MODULE 45V 240A HALF-PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 240A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 240A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 12mA @ 45V
  • Capacitance @ Vr, F: 10500pF @ 5V, 1MHz
  • Mounting Type: Chassis Mount
  • Package / Case: HALF-PAK
  • Supplier Device Package: HALF-PAK
  • Operating Temperature - Junction: -
Paket: HALF-PAK
Lager7.856
45V
240A
550mV @ 240A
Fast Recovery =< 500ns, > 200mA (Io)
-
12mA @ 45V
10500pF @ 5V, 1MHz
Chassis Mount
HALF-PAK
HALF-PAK
-
HS24040
Microsemi Corporation

DIODE MODULE 40V 240A HALF-PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 240A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 240A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 12mA @ 40V
  • Capacitance @ Vr, F: 10500pF @ 5V, 1MHz
  • Mounting Type: Chassis Mount
  • Package / Case: HALF-PAK
  • Supplier Device Package: HALF-PAK
  • Operating Temperature - Junction: -
Paket: HALF-PAK
Lager6.384
40V
240A
550mV @ 240A
Fast Recovery =< 500ns, > 200mA (Io)
-
12mA @ 40V
10500pF @ 5V, 1MHz
Chassis Mount
HALF-PAK
HALF-PAK
-
HS12045
Microsemi Corporation

DIODE MODULE 45V 120A HALF-PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 120A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 120A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 45V
  • Capacitance @ Vr, F: 5500pF @ 5V, 1MHz
  • Mounting Type: Chassis Mount
  • Package / Case: HALF-PAK
  • Supplier Device Package: HALF-PAK
  • Operating Temperature - Junction: -
Paket: HALF-PAK
Lager6.352
45V
120A
550mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
5mA @ 45V
5500pF @ 5V, 1MHz
Chassis Mount
HALF-PAK
HALF-PAK
-
MX1H5615
Microsemi Corporation

DIODE GEN PURP 200V AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -
Paket: Axial
Lager7.072
200V
-
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Through Hole
Axial
Axial
-
LSM845JE3
Microsemi Corporation

DIODE SCHOTTKY 45V 8A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 520mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-214AB, SMC
Lager7.376
45V
8A
520mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 45V
-
Surface Mount
DO-214AB, SMC
DO-214AB
-55°C ~ 150°C
LSM545JE3
Microsemi Corporation

DIODE SCHOTTKY 45V 5A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 520mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-214AB, SMC
Lager3.504
45V
5A
520mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 45V
-
Surface Mount
DO-214AB, SMC
DO-214AB
-55°C ~ 150°C
LSM345JE3
Microsemi Corporation

DIODE SCHOTTKY 45V 3A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 520mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.5mA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-214AB, SMC
Lager5.168
45V
3A
520mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.5mA @ 45V
-
Surface Mount
DO-214AB, SMC
DO-214AB
-55°C ~ 150°C
SBR8050E3
Microsemi Corporation

DIODE SCHOTTKY 50V 80A DO203AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 80A
  • Voltage - Forward (Vf) (Max) @ If: 740mV @ 80A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-203AB, DO-5, Stud
Lager2.736
50V
80A
740mV @ 80A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 50V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-203AB
-65°C ~ 175°C
SBR6045E3
Microsemi Corporation

DIODE SCHOTTKY 45V 60A DO203AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: DO-203AB, DO-5, Stud
Lager5.616
45V
60A
600mV @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 45V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-203AB
-65°C ~ 150°C
SBR3050E3
Microsemi Corporation

DIODE SCHOTTKY 50V 30A DO203AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 630mV @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.5mA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-203AA
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: DO-203AA, DO-4, Stud
Lager4.800
50V
30A
630mV @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.5mA @ 50V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-203AA
-55°C ~ 175°C
HS24515E3
Microsemi Corporation

DIODE MODULE 15V 240A HALF-PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 15V
  • Current - Average Rectified (Io): 240A
  • Voltage - Forward (Vf) (Max) @ If: 370mV @ 240A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150mA @ 15V
  • Capacitance @ Vr, F: 21700pF @ 5V, 1MHz
  • Mounting Type: Chassis Mount
  • Package / Case: HALF-PAK
  • Supplier Device Package: HALF-PAK
  • Operating Temperature - Junction: -
Paket: HALF-PAK
Lager2.448
15V
240A
370mV @ 240A
Fast Recovery =< 500ns, > 200mA (Io)
-
150mA @ 15V
21700pF @ 5V, 1MHz
Chassis Mount
HALF-PAK
HALF-PAK
-