Bild |
Teilenummer |
Hersteller |
Beschreibung |
Paket |
Lager |
Anzahl |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation |
DIODE GEN PURP 900V 1A A-MELF
|
Paket: SQ-MELF, A |
Lager6.576 |
|
900V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 900V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 900V 1A AXIAL
|
Paket: A, Axial |
Lager2.960 |
|
900V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 900V | - | Through Hole | A, Axial | - | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 800V 1A A-MELF
|
Paket: SQ-MELF, A |
Lager6.432 |
|
800V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 500nA @ 800V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 800V 1A A-MELF
|
Paket: SQ-MELF, A |
Lager3.536 |
|
800V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 500nA @ 800V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 800V 1A A-MELF
|
Paket: SQ-MELF, A |
Lager4.864 |
|
800V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 800V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 800V 1A AXIAL
|
Paket: A, Axial |
Lager3.536 |
|
800V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 800V | - | Through Hole | A, Axial | A-PAK | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 660V 2A D5A
|
Paket: SQ-MELF, A |
Lager6.128 |
|
660V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 660V | 10pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 1.2A A-MELF
|
Paket: SQ-MELF, A |
Lager6.608 |
|
600V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 600V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 1.2A A-MELF
|
Paket: SQ-MELF, A |
Lager3.216 |
|
600V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 600V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 1.2A A-MELF
|
Paket: SQ-MELF, A |
Lager6.096 |
|
600V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 600V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 1.2A A-MELF
|
Paket: SQ-MELF, A |
Lager5.712 |
|
400V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 400V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 1.2A A-MELF
|
Paket: SQ-MELF, A |
Lager4.240 |
|
400V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 400V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 1.2A A-MELF
|
Paket: SQ-MELF, A |
Lager3.696 |
|
400V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 400V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 1.2A A-MELF
|
Paket: SQ-MELF, A |
Lager2.100 |
|
200V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 200V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 1.2A A-MELF
|
Paket: SQ-MELF, A |
Lager4.352 |
|
200V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 200V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 1.2A A-MELF
|
Paket: SQ-MELF, A |
Lager7.744 |
|
200V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 200V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 150V 2A AXIAL
|
Paket: G, Axial |
Lager4.048 |
|
150V | 2A | 1.5V @ 37.7A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 150V | - | Through Hole | G, Axial | G, Axial | -65°C ~ 155°C |
||
Microsemi Corporation |
DIODE GEN PURP 150V 2A AXIAL
|
Paket: A, Axial |
Lager3.152 |
|
150V | 2A | 1.5V @ 37.7A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | - | Through Hole | A, Axial | A-PAK | -65°C ~ 155°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 3A B-MELF
|
Paket: SQ-MELF, B |
Lager4.192 |
|
1000V | 3A | 1.3V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 1000V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 3A B-MELF
|
Paket: SQ-MELF, B |
Lager4.416 |
|
600V | 3A | 1.2V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 2µs | 1µA @ 600V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 3A B-MELF
|
Paket: SQ-MELF, B |
Lager3.280 |
|
200V | 3A | 1.2V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 2µs | 1µA @ 200V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 3A AXIAL
|
Paket: B, Axial |
Lager3.888 |
|
100V | 3A | 1.5V @ 9A | Standard Recovery >500ns, > 200mA (Io) | - | 2µA @ 100V | - | Through Hole | B, Axial | Axial | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 15A DO203AA
|
Paket: DO-203AA, DO-4, Stud |
Lager7.744 |
|
1000V | 15A | 1.5V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1000V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 15A DO203AA
|
Paket: DO-203AA, DO-4, Stud |
Lager5.312 |
|
1000V | 15A | 1.5V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1000V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 15A DO203AA
|
Paket: DO-203AA, DO-4, Stud |
Lager3.600 |
|
1000V | 15A | 1.5V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1000V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 15A DO203AA
|
Paket: DO-203AA, DO-4, Stud |
Lager3.824 |
|
1000V | 15A | 1.5V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1000V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 800V 15A DO203AA
|
Paket: DO-203AA, DO-4, Stud |
Lager5.552 |
|
800V | 15A | 1.5V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 800V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 800V 15A DO203AA
|
Paket: DO-203AA, DO-4, Stud |
Lager3.312 |
|
800V | 15A | 1.5V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 800V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 800V 15A DO203AA
|
Paket: DO-203AA, DO-4, Stud |
Lager6.992 |
|
800V | 15A | 1.5V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 800V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 800V 15A DO203AA
|
Paket: DO-203AA, DO-4, Stud |
Lager6.288 |
|
800V | 15A | 1.5V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 800V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 175°C |