Page 3 - Microsemi Corporation Produkte - Transistoren - Bipolar (BJT) - HF

Teilenummer	Hersteller	Beschreibung	Paket	Lager	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SD1224-02	Microsemi Corporation	TRANS RF BIPO 60W 5A M113 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 35V Frequency - Transition: 175MHz Noise Figure (dB Typ @ f): - Gain: 7.6dB Power - Max: 60W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M113 Supplier Device Package: M113	Paket: M113	Lager3.648	35V	175MHz	-	7.6dB	60W	20 @ 500mA, 5V	5A	200°C (TJ)	Chassis Mount	M113	M113
JANTX2N4957UB	Microsemi Corporation	TRANS PNP 30V 30MA Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: - Noise Figure (dB Typ @ f): 3.5dB @ 450MHz Gain: 25dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	Paket: 3-SMD, No Lead	Lager7.248	30V	-	3.5dB @ 450MHz	25dB	200mW	30 @ 5mA, 10V	30mA	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
JANTX2N4957	Microsemi Corporation	TRANS PNP 30V 30MA TO72 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: - Noise Figure (dB Typ @ f): 3.5dB @ 450MHz Gain: 25dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-72-3 Metal Can Supplier Device Package: TO-72	Paket: TO-72-3 Metal Can	Lager3.216	30V	-	3.5dB @ 450MHz	25dB	200mW	30 @ 5mA, 10V	30mA	-65°C ~ 200°C (TJ)	Through Hole	TO-72-3 Metal Can	TO-72
JAN2N4957UB	Microsemi Corporation	TRANS PNP 30V 30MA Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: - Noise Figure (dB Typ @ f): 3.5dB @ 450MHz Gain: 25dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	Paket: 3-SMD, No Lead	Lager6.032	30V	-	3.5dB @ 450MHz	25dB	200mW	30 @ 5mA, 10V	30mA	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
JANTX2N2857	Microsemi Corporation	TRANS NPN 15V 0.04A TO-72 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 12.5dB ~ 21dB @ 450MHz Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-72-3 Metal Can Supplier Device Package: TO-72	Paket: TO-72-3 Metal Can	Lager3.712	15V	500MHz	4.5dB @ 450MHz	12.5dB ~ 21dB @ 450MHz	200mW	30 @ 3mA, 1V	40mA	-65°C ~ 200°C (TJ)	Through Hole	TO-72-3 Metal Can	TO-72
2N4957UB	Microsemi Corporation	TRANS PNP 30V 30MA Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: - Noise Figure (dB Typ @ f): 3.5dB @ 450MHz Gain: 25dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	Paket: 3-SMD, No Lead	Lager6.768	30V	-	3.5dB @ 450MHz	25dB	200mW	30 @ 5mA, 10V	30mA	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
SD1444	Microsemi Corporation	TRANS RF BIPO 5W 400MA TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 450MHz ~ 512MHz Noise Figure (dB Typ @ f): - Gain: 8dB Power - Max: 5W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	Paket: TO-205AD, TO-39-3 Metal Can	Lager5.168	16V	450MHz ~ 512MHz	-	8dB	5W	20 @ 50mA, 5V	400mA	200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
SD1127	Microsemi Corporation	TRANSISTOR BIPO TO-39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 175MHz Noise Figure (dB Typ @ f): - Gain: 12dB Power - Max: 8W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V Current - Collector (Ic) (Max): 640mA Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	Paket: TO-205AD, TO-39-3 Metal Can	Lager3.968	18V	175MHz	-	12dB	8W	10 @ 50mA, 5V	640mA	200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
MS1649	Microsemi Corporation	TRANS RF BIPO 7.8W 470MHZ TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 470MHz Noise Figure (dB Typ @ f): - Gain: 9.5dB Power - Max: 7.8W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	Paket: TO-205AD, TO-39-3 Metal Can	Lager3.456	16V	470MHz	-	9.5dB	7.8W	20 @ 100mA, 5V	1A	200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
MS1409	Microsemi Corporation	TRANS RF BIPO 7W 1A TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 175MHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 7W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	Paket: TO-205AD, TO-39-3 Metal Can	Lager3.520	40V	175MHz	-	10dB	7W	20 @ 100mA, 5V	1A	200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
2N5179	Microsemi Corporation	TRANS RF NPN 12V 50MA TO72 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 200MHz Noise Figure (dB Typ @ f): 4.5dB @ 200MHz Gain: 20dB Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	Paket: TO-206AF, TO-72-4 Metal Can	Lager17.928	12V	200MHz	4.5dB @ 200MHz	20dB	300mW	25 @ 3mA, 1V	50mA	-	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72
MRF586G	Microsemi Corporation	TRANS BIPO NPN TO-39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 17V Frequency - Transition: 3GHz Noise Figure (dB Typ @ f): - Gain: 13.5dB Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	Paket: TO-205AD, TO-39-3 Metal Can	Lager4.208	17V	3GHz	-	13.5dB	1W	40 @ 50mA, 5V	200mA	-	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
SRF4427	Microsemi Corporation	TRANS RF BIPO 1.5W 400MA 8SOIC Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 1.3GHz Noise Figure (dB Typ @ f): - Gain: 17dB ~ 18dB Power - Max: 1.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Paket: 8-SOIC (0.154", 3.90mm Width)	Lager2.672	18V	1.3GHz	-	17dB ~ 18dB	1.5W	20 @ 150mA, 5V	400mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
MRF5812R2	Microsemi Corporation	RF TRANS NPN 18V 200MA 8SOIC Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 2dB @ 500MHz Gain: 15.5dB Power - Max: 1.25W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Paket: 8-SOIC (0.154", 3.90mm Width)	Lager266.268	18V	5GHz	2dB @ 500MHz	15.5dB	1.25W	50 @ 50mA, 5V	200mA	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
MSC80205	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MSC80806	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MSC1175MA	Microsemi Corporation	RF TRANS NPN 65V 1.15GHZ M218 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 8dB Power - Max: 400W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 12A Operating Temperature: 250°C Mounting Type: Chassis Mount Package / Case: M218 Supplier Device Package: M218	Paket: -	Request a Quote	65V	1.025GHz ~ 1.15GHz	-	8dB	400W	15 @ 1A, 5V	12A	250°C	Chassis Mount	M218	M218
2224-6P	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SD1143-01	Microsemi Corporation	RF TRANS NPN 18V 175MHZ M113 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 175MHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 20W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 250mA, 5V Current - Collector (Ic) (Max): 2A Operating Temperature: 200°C Mounting Type: Chassis Mount Package / Case: M113 Supplier Device Package: M113	Paket: -	Request a Quote	18V	175MHz	-	10dB	20W	5 @ 250mA, 5V	2A	200°C	Chassis Mount	M113	M113
SD1013-20H	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SD1372-01H	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SD1372-06H	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
58048	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MRFC545	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MRFC544	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
82092H	Microsemi Corporation	TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SD1019-02	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
90025HS	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SD1853-02H	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SD1536-01	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

SD1224-02

Microsemi Corporation

TRANS RF BIPO 60W 5A M113

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 35V
Frequency - Transition: 175MHz
Noise Figure (dB Typ @ f): -
Gain: 7.6dB
Power - Max: 60W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M113
Supplier Device Package: M113

Paket: M113

Lager3.648

35V

175MHz

-

7.6dB

60W

20 @ 500mA, 5V

5A

200°C (TJ)

Chassis Mount

M113

JANTX2N4957UB

Microsemi Corporation

TRANS PNP 30V 30MA

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
Gain: 25dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

Paket: 3-SMD, No Lead

Lager7.248

30V

-

3.5dB @ 450MHz

25dB

200mW

30 @ 5mA, 10V

30mA

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

JANTX2N4957

Microsemi Corporation

TRANS PNP 30V 30MA TO72

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
Gain: 25dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-72-3 Metal Can
Supplier Device Package: TO-72

Paket: TO-72-3 Metal Can

Lager3.216

30V

-

3.5dB @ 450MHz

25dB

200mW

30 @ 5mA, 10V

30mA

-65°C ~ 200°C (TJ)

Through Hole

TO-72-3 Metal Can

TO-72

JAN2N4957UB

Microsemi Corporation

TRANS PNP 30V 30MA

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
Gain: 25dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

Paket: 3-SMD, No Lead

Lager6.032

30V

-

3.5dB @ 450MHz

25dB

200mW

30 @ 5mA, 10V

30mA

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

JANTX2N2857

Microsemi Corporation

TRANS NPN 15V 0.04A TO-72

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Gain: 12.5dB ~ 21dB @ 450MHz
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-72-3 Metal Can
Supplier Device Package: TO-72

Paket: TO-72-3 Metal Can

Lager3.712

15V

500MHz

4.5dB @ 450MHz

12.5dB ~ 21dB @ 450MHz

200mW

30 @ 3mA, 1V

40mA

-65°C ~ 200°C (TJ)

Through Hole

TO-72-3 Metal Can

TO-72

2N4957UB

Microsemi Corporation

TRANS PNP 30V 30MA

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
Gain: 25dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

Paket: 3-SMD, No Lead

Lager6.768

30V

-

3.5dB @ 450MHz

25dB

200mW

30 @ 5mA, 10V

30mA

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

SD1444

Microsemi Corporation

TRANS RF BIPO 5W 400MA TO39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: 450MHz ~ 512MHz
Noise Figure (dB Typ @ f): -
Gain: 8dB
Power - Max: 5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

Paket: TO-205AD, TO-39-3 Metal Can

Lager5.168

16V

450MHz ~ 512MHz

-

8dB

5W

20 @ 50mA, 5V

400mA

200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

SD1127

Microsemi Corporation

TRANSISTOR BIPO TO-39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 175MHz
Noise Figure (dB Typ @ f): -
Gain: 12dB
Power - Max: 8W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
Current - Collector (Ic) (Max): 640mA
Operating Temperature: 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

Paket: TO-205AD, TO-39-3 Metal Can

Lager3.968

18V

175MHz

-

12dB

8W

10 @ 50mA, 5V

640mA

200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

MS1649

Microsemi Corporation

TRANS RF BIPO 7.8W 470MHZ TO39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: 470MHz
Noise Figure (dB Typ @ f): -
Gain: 9.5dB
Power - Max: 7.8W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 1A
Operating Temperature: 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

Paket: TO-205AD, TO-39-3 Metal Can

Lager3.456

16V

470MHz

-

9.5dB

7.8W

20 @ 100mA, 5V

1A

200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

MS1409

Microsemi Corporation

TRANS RF BIPO 7W 1A TO39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 40V
Frequency - Transition: 175MHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 7W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 1A
Operating Temperature: 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

Paket: TO-205AD, TO-39-3 Metal Can

Lager3.520

40V

175MHz

-

10dB

7W

20 @ 100mA, 5V

1A

200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

2N5179

Microsemi Corporation

TRANS RF NPN 12V 50MA TO72

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 200MHz
Noise Figure (dB Typ @ f): 4.5dB @ 200MHz
Gain: 20dB
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72

Paket: TO-206AF, TO-72-4 Metal Can

Lager17.928

12V

200MHz

4.5dB @ 200MHz

20dB

300mW

25 @ 3mA, 1V

50mA

-

Through Hole

TO-206AF, TO-72-4 Metal Can

TO-72

MRF586G

Microsemi Corporation

TRANS BIPO NPN TO-39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 17V
Frequency - Transition: 3GHz
Noise Figure (dB Typ @ f): -
Gain: 13.5dB
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

Paket: TO-205AD, TO-39-3 Metal Can

Lager4.208

17V

3GHz

-

13.5dB

1W

40 @ 50mA, 5V

200mA

-

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

SRF4427

Microsemi Corporation

TRANS RF BIPO 1.5W 400MA 8SOIC

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 1.3GHz
Noise Figure (dB Typ @ f): -
Gain: 17dB ~ 18dB
Power - Max: 1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

Paket: 8-SOIC (0.154", 3.90mm Width)

Lager2.672

18V

1.3GHz

-

17dB ~ 18dB

1.5W

20 @ 150mA, 5V

400mA

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

MRF5812R2

Microsemi Corporation

RF TRANS NPN 18V 200MA 8SOIC

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB @ 500MHz
Gain: 15.5dB
Power - Max: 1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

Paket: 8-SOIC (0.154", 3.90mm Width)

Lager266.268

18V

5GHz

2dB @ 500MHz

15.5dB

1.25W

50 @ 50mA, 5V

200mA

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

MSC80205

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

-

MSC80806

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

-

MSC1175MA

Microsemi Corporation

RF TRANS NPN 65V 1.15GHZ M218

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB
Power - Max: 400W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
Current - Collector (Ic) (Max): 12A
Operating Temperature: 250°C
Mounting Type: Chassis Mount
Package / Case: M218
Supplier Device Package: M218

Paket: -

Request a Quote

65V

1.025GHz ~ 1.15GHz

-

8dB

400W

15 @ 1A, 5V

12A

250°C

Chassis Mount

M218

2224-6P

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

-

SD1143-01

Microsemi Corporation

RF TRANS NPN 18V 175MHZ M113

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 175MHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 20W
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 250mA, 5V
Current - Collector (Ic) (Max): 2A
Operating Temperature: 200°C
Mounting Type: Chassis Mount
Package / Case: M113
Supplier Device Package: M113

Paket: -

Request a Quote

18V

175MHz

-

10dB

20W

5 @ 250mA, 5V

2A

200°C

Chassis Mount

M113

SD1013-20H

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

-

SD1372-01H

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

-

SD1372-06H

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

-

58048

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

-

MRFC545

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

-

MRFC544

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

-

82092H

Microsemi Corporation

TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

-

SD1019-02

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

-

90025HS

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

-

SD1853-02H

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

-

SD1536-01

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

-