Bild |
Teilenummer |
Hersteller |
Beschreibung |
Paket |
Lager |
Anzahl |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation |
MOSFET N-CH 600V 42A SOT-227
|
Paket: SOT-227-4, miniBLOC |
Lager4.448 |
|
MOSFET (Metal Oxide) | 600V | 42A | 10V | 5V @ 2.5mA | 280nC @ 10V | 11300pF @ 25V | ±30V | - | 480W (Tc) | 110 mOhm @ 28A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | SOT-227-4, miniBLOC |
||
Microsemi Corporation |
MOSFET N-CH 600V 94A TO264
|
Paket: TO-264-3, TO-264AA |
Lager6.240 |
|
MOSFET (Metal Oxide) | 600V | 94A (Tc) | 10V | 3.9V @ 5.4mA | 640nC @ 10V | 13600pF @ 25V | ±20V | - | 833W (Tc) | 35 mOhm @ 60A, 10V | -55°C ~ 150°C (TJ) | Through Hole | 264 MAX? [L2] | TO-264-3, TO-264AA |
||
Microsemi Corporation |
MOSFET N-CH 900V 36A TO-247
|
Paket: TO-247-3 |
Lager4.448 |
|
MOSFET (Metal Oxide) | 900V | 36A (Tc) | 10V | 3.5V @ 2.9mA | 252nC @ 10V | 7463pF @ 25V | ±20V | Super Junction | 390W (Tc) | 120 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
||
Microsemi Corporation |
MOSFET N-CH 1200V 24A TO-264
|
Paket: TO-264-3, TO-264AA |
Lager5.392 |
|
MOSFET (Metal Oxide) | 1200V | 24A (Tc) | 10V | 5V @ 2.5mA | 260nC @ 10V | 8370pF @ 25V | ±30V | - | 1040W (Tc) | 680 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
||
Microsemi Corporation |
MOSFET N-CH 500V 46A TO-264
|
Paket: TO-264-3, TO-264AA |
Lager4.896 |
|
MOSFET (Metal Oxide) | 500V | 46A (Tc) | 10V | 5V @ 2.5mA | 95nC @ 10V | 4360pF @ 25V | ±30V | - | 520W (Tc) | 100 mOhm @ 23A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
||
Microsemi Corporation |
MOSFET N-CH 600V 47A D3PAK
|
Paket: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Lager4.368 |
|
MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 3.9V @ 2.7mA | 260nC @ 10V | 7015pF @ 25V | ±20V | - | 417W (Tc) | 70 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D3 [S] | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
Microsemi Corporation |
MOSFET N-CH 500V 56A TO-264
|
Paket: TO-264-3, TO-264AA |
Lager7.984 |
|
MOSFET (Metal Oxide) | 500V | 56A (Tc) | 10V | 5V @ 2.5mA | 220nC @ 10V | 8800pF @ 25V | ±30V | - | 780W (Tc) | 100 mOhm @ 28A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA |
||
Microsemi Corporation |
MOSFET N-CH 500V 42A TO-247
|
Paket: TO-247-3 |
Lager5.952 |
|
MOSFET (Metal Oxide) | 500V | 42A (Tc) | 10V | 5V @ 1mA | 170nC @ 10V | 6810pF @ 25V | ±30V | - | 625W (Tc) | 130 mOhm @ 21A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
||
Microsemi Corporation |
MOSFET N-CH 1200V 3.5A TO-247
|
Paket: TO-247-3 |
Lager6.912 |
|
MOSFET (Metal Oxide) | 1200V | 3.5A (Tc) | 10V | 5V @ 1mA | 31nC @ 10V | 715pF @ 25V | ±30V | - | 135W (Tc) | 4.7 Ohm @ 1.75A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
||
Microsemi Corporation |
MOSFET N-CH 600V 38A TO-247
|
Paket: TO-247-3 |
Lager4.208 |
|
MOSFET (Metal Oxide) | 600V | 38A (Tc) | 10V | 3.5V @ 1.2mA | 112nC @ 10V | 2826pF @ 25V | ±20V | - | 278W (Tc) | 99 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
||
Microsemi Corporation |
MOSFET N-CH 1000V 8A TO-247
|
Paket: TO-247-3 |
Lager111.336 |
|
MOSFET (Metal Oxide) | 1000V | 8A (Tc) | 10V | 5V @ 1mA | 60nC @ 10V | 1885pF @ 25V | ±30V | - | 290W (Tc) | 1.8 Ohm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
||
Microsemi Corporation |
MOSFET N-CH 1200V 41A TO247
|
Paket: TO-247-3 |
Lager5.216 |
|
SiCFET (Silicon Carbide) | 1200V | 41A (Tc) | 20V | 3V @ 1mA (Typ) | 130nC @ 20V | 2560pF @ 1000V | +25V, -10V | - | 273W (Tc) | 100 mOhm @ 20A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Microsemi Corporation |
MOSFET N-CH 500V 56A T-MAX
|
Paket: TO-247-3 Variant |
Lager7.712 |
|
MOSFET (Metal Oxide) | 500V | 56A (Tc) | 10V | 5V @ 2.5mA | 220nC @ 10V | 8800pF @ 25V | ±30V | - | 780W (Tc) | 100 mOhm @ 28A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? | TO-247-3 Variant |
||
Microsemi Corporation |
MOSFET N-CH 600V 106A TO-247
|
Paket: TO-247-3 Variant |
Lager7.920 |
|
MOSFET (Metal Oxide) | 600V | 106A (Tc) | 10V | 3.5V @ 3.4mA | 308nC @ 10V | 8390pF @ 25V | ±20V | - | 833W (Tc) | 35 mOhm @ 53A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? [B2] | TO-247-3 Variant |
||
Microsemi Corporation |
MOSFET N-CH 500V 30A TO-247
|
Paket: TO-247-3 |
Lager7.248 |
|
MOSFET (Metal Oxide) | 500V | 30A (Tc) | 10V | 5V @ 1mA | 115nC @ 10V | 4525pF @ 25V | ±30V | - | 415W (Tc) | 190 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
||
Microsemi Corporation |
MOSFET N-CH 650V 95A T-MAX
|
Paket: TO-247-3 Variant |
Lager9.948 |
|
MOSFET (Metal Oxide) | 650V | 95A (Tc) | 10V | 3.5V @ 3.5mA | 320nC @ 10V | 8140pF @ 25V | ±20V | Super Junction | 833W (Tc) | 35 mOhm @ 35.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? [B2] | TO-247-3 Variant |
||
Microsemi Corporation |
MOSFET N-CH 600V 60A TO-247
|
Paket: TO-247-3 |
Lager4.208 |
|
MOSFET (Metal Oxide) | 600V | 60A (Tc) | 10V | 3.9V @ 3mA | 190nC @ 10V | 7200pF @ 25V | ±30V | - | 431W (Tc) | 45 mOhm @ 44A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
||
Microsemi Corporation |
MOSFET N-CH 800V 48A TO-264
|
Paket: TO-264-3, TO-264AA |
Lager7.044 |
|
MOSFET (Metal Oxide) | 800V | 49A (Tc) | 10V | 5V @ 2.5mA | 305nC @ 10V | 9330pF @ 25V | ±30V | - | 1135W (Tc) | 200 mOhm @ 24A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
||
Microsemi Corporation |
MOSFET N-CH 1000V 17A TO-247
|
Paket: TO-247-3 |
Lager7.232 |
|
MOSFET (Metal Oxide) | 1000V | 17A (Tc) | 10V | 5V @ 1mA | 150nC @ 10V | 4845pF @ 25V | ±30V | - | 625W (Tc) | 800 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
||
Microsemi Corporation |
MOSFET N-CH 500V 24A TO-247
|
Paket: TO-247-3 |
Lager8.196 |
|
MOSFET (Metal Oxide) | 500V | 24A (Tc) | 10V | 5V @ 1mA | 90nC @ 10V | 3630pF @ 25V | ±30V | - | 335W (Tc) | 240 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
||
Microsemi Corporation |
MOSFET N-CH 100V 860A SP6
|
Paket: SP6 |
Lager5.824 |
|
MOSFET (Metal Oxide) | 100V | 860A | 10V | 4V @ 12mA | 2100nC @ 10V | 60000pF @ 25V | ±30V | - | 2500W (Tc) | 1.6 mOhm @ 275A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
||
Microsemi Corporation |
MOSFET N-CH 500V 52A SOT-227
|
Paket: SOT-227-4, miniBLOC |
Lager6.400 |
|
MOSFET (Metal Oxide) | 500V | 52A | 15V | 4V @ 2.5mA | - | 9000pF @ 25V | ±30V | - | 568W (Tc) | 90 mOhm @ 26A, 12V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | SOT-227-4, miniBLOC |
||
Microsemi Corporation |
MOSFET N-CH 1200V 32A SOT227
|
Paket: SOT-227-4, miniBLOC |
Lager8.172 |
|
MOSFET (Metal Oxide) | 1200V | 32A | 20V | 3V @ 1mA (Typ) | 130nC @ 20V | 2560pF @ 1000V | +25V, -10V | - | 165W (Tc) | 100 mOhm @ 20A, 20V | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
||
Microsemi Corporation |
MOSFET N-CH 1200V 14A TO-247
|
Paket: TO-247-3 |
Lager4.848 |
|
MOSFET (Metal Oxide) | 1200V | 14A (Tc) | 10V | 5V @ 1mA | 145nC @ 10V | 4765pF @ 25V | ±30V | - | 625W (Tc) | 1.2 Ohm @ 7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
||
Microsemi Corporation |
MOSFET N-CH 1200V 14A TO247
|
Paket: TO-247-3 |
Lager10.380 |
|
MOSFET (Metal Oxide) | 1200V | 14A (Tc) | 10V | 5V @ 1mA | 145nC @ 10V | 4765pF @ 25V | ±30V | - | 625W (Tc) | 1.4 Ohm @ 7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
||
Microsemi Corporation |
MOSFET N-CH 500V 58A TO-264
|
Paket: TO-264-3, TO-264AA |
Lager7.560 |
|
MOSFET (Metal Oxide) | 500V | 58A (Tc) | 15V | 4V @ 2.5mA | - | 9000pF @ 25V | ±30V | - | 730W (Tc) | 90 mOhm @ 29A, 12V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
||
Microsemi Corporation |
MOSFET N-CH 500V 58A SOT-227
|
Paket: SOT-227-4, miniBLOC |
Lager6.432 |
|
MOSFET (Metal Oxide) | 500V | 58A | 10V | 5V @ 2.5mA | 141nC @ 10V | 7010pF @ 25V | ±30V | - | 520W (Tc) | 65 mOhm @ 29A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | SOT-227-4, miniBLOC |
||
Microsemi Corporation |
MOSFET N-CH 1200V 41A D3PAK
|
Paket: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Lager18.444 |
|
SiCFET (Silicon Carbide) | 1200V | 41A (Tc) | 20V | 3V @ 1mA (Typ) | 130nC @ 20V | 2560pF @ 1000V | +25V, -10V | - | 273W (Tc) | 100 mOhm @ 20A, 20V | -55°C ~ 175°C (TJ) | Surface Mount | D3Pak | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
Microsemi Corporation |
MOSFET N-CH 1000V 37A TO-264
|
Paket: TO-264-3, TO-264AA |
Lager6.288 |
|
MOSFET (Metal Oxide) | 1000V | 37A (Tc) | 10V | 5V @ 2.5mA | 305nC @ 10V | 9835pF @ 25V | ±30V | - | 1135W (Tc) | 330 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA |
||
Microsemi Corporation |
MOSFET N-CH 1200V 8A TO247
|
Paket: TO-247-3 |
Lager104.256 |
|
MOSFET (Metal Oxide) | 1200V | 8A (Tc) | 10V | 5V @ 1mA | 80nC @ 10V | 2565pF @ 25V | ±30V | - | 335W (Tc) | 2.5 Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |