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Microsemi Corporation Produkte - Transistoren - FETs, MOSFET - Einzeln

Aufzeichnungen 588
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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
APT4016BVRG
Microsemi Corporation

MOSFET N-CH 400V TO-247

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paket: -
Lager3.088
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
APT5014B2VRG
Microsemi Corporation

MOSFET N-CH 500V T-MAX

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paket: -
Lager4.128
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
APT12080JVR
Microsemi Corporation

MOSFET N-CH 1.2KV 15A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 485nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 450W (Tc)
  • Rds On (Max) @ Id, Vgs: 800 mOhm @ 7.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
Paket: SOT-227-4, miniBLOC
Lager5.600
MOSFET (Metal Oxide)
1200V
15A (Tc)
10V
4V @ 2.5mA
485nC @ 10V
7800pF @ 25V
±30V
-
450W (Tc)
800 mOhm @ 7.5A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
hot APT4012BVRG
Microsemi Corporation

MOSFET N-CH 400V 37A TO247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 370W (Tc)
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 18.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager6.624
MOSFET (Metal Oxide)
400V
37A (Tc)
10V
4V @ 1mA
290nC @ 10V
5400pF @ 25V
±30V
-
370W (Tc)
120 mOhm @ 18.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
hot APT4012BVR
Microsemi Corporation

MOSFET N-CH 400V 37A TO247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 370W (Tc)
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 18.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager103.464
MOSFET (Metal Oxide)
400V
37A (Tc)
10V
4V @ 1mA
290nC @ 10V
5400pF @ 25V
±30V
-
370W (Tc)
120 mOhm @ 18.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
APT10M11JVR
Microsemi Corporation

MOSFET N-CH 100V 144A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 144A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 450nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 450W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
Paket: SOT-227-4, miniBLOC
Lager2.384
MOSFET (Metal Oxide)
100V
144A (Tc)
10V
4V @ 2.5mA
450nC @ 10V
10300pF @ 25V
±30V
-
450W (Tc)
-
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
APT10M07JVR
Microsemi Corporation

MOSFET N-CH 100V 225A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 1050nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 21600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 700W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
Paket: SOT-227-4, miniBLOC
Lager7.952
MOSFET (Metal Oxide)
100V
225A (Tc)
10V
4V @ 5mA
1050nC @ 10V
21600pF @ 25V
±30V
-
700W (Tc)
-
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
APT58MJ50J
Microsemi Corporation

MOSFET N-CH 500V 58A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 540W (Tc)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 42A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
Paket: SOT-227-4, miniBLOC
Lager5.088
MOSFET (Metal Oxide)
500V
58A (Tc)
10V
5V @ 2.5mA
340nC @ 10V
13500pF @ 25V
±30V
-
540W (Tc)
65 mOhm @ 42A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
hot APT8075BN
Microsemi Corporation

MOSFET N-CH 800V 13A TO247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 310W (Tc)
  • Rds On (Max) @ Id, Vgs: 750 mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager94.800
MOSFET (Metal Oxide)
800V
13A (Tc)
10V
4V @ 1mA
130nC @ 10V
2950pF @ 25V
±30V
-
310W (Tc)
750 mOhm @ 6.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
APT8018JN
Microsemi Corporation

MOSFET N-CH 800V 40A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 690W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
Paket: SOT-227-4, miniBLOC
Lager4.864
MOSFET (Metal Oxide)
800V
40A (Tc)
10V
4V @ 5mA
700nC @ 10V
14000pF @ 25V
±30V
-
690W (Tc)
180 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
APT6040BNG
Microsemi Corporation

MOSFET N-CH 600V 18A TO247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 310W (Tc)
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager5.600
MOSFET (Metal Oxide)
600V
18A (Tc)
10V
4V @ 1mA
130nC @ 10V
2950pF @ 25V
±30V
-
310W (Tc)
400 mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
hot APT6040BN
Microsemi Corporation

MOSFET N-CH 600V 18A TO247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 310W (Tc)
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager87.600
MOSFET (Metal Oxide)
600V
18A (Tc)
10V
4V @ 1mA
130nC @ 10V
2950pF @ 25V
±30V
-
310W (Tc)
400 mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
hot APT6030BN
Microsemi Corporation

MOSFET N-CH 600V 23A TO247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 11.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager188.664
MOSFET (Metal Oxide)
600V
23A (Tc)
10V
4V @ 1mA
210nC @ 10V
3500pF @ 25V
±30V
-
360W (Tc)
300 mOhm @ 11.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
hot APT5025BN
Microsemi Corporation

MOSFET N-CH 500V 23A TO247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 310W (Tc)
  • Rds On (Max) @ Id, Vgs: 250 mOhm @ 11.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager171.864
MOSFET (Metal Oxide)
500V
23A (Tc)
10V
4V @ 1mA
130nC @ 10V
2950pF @ 25V
±30V
-
310W (Tc)
250 mOhm @ 11.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
APT5022BNG
Microsemi Corporation

MOSFET N-CH 500V 27A TO247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 220 mOhm @ 13.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager7.280
MOSFET (Metal Oxide)
500V
27A (Tc)
10V
4V @ 1mA
210nC @ 10V
3500pF @ 25V
±30V
-
360W (Tc)
220 mOhm @ 13.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
hot APT5020BNFR
Microsemi Corporation

MOSFET N-CH 500V 28A TO247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager7.200
MOSFET (Metal Oxide)
500V
28A (Tc)
10V
4V @ 1mA
210nC @ 10V
3500pF @ 25V
±30V
-
360W (Tc)
200 mOhm @ 14A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
hot APT5020BN
Microsemi Corporation

MOSFET N-CH 500V 28A TO247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager61.200
MOSFET (Metal Oxide)
500V
28A (Tc)
10V
4V @ 1mA
210nC @ 10V
3500pF @ 25V
±30V
-
360W (Tc)
200 mOhm @ 14A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
APT5012JN
Microsemi Corporation

MOSFET N-CH 500V 43A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 370nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 520W (Tc)
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 21.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
Paket: SOT-227-4, miniBLOC
Lager4.608
MOSFET (Metal Oxide)
500V
43A (Tc)
10V
4V @ 2.5mA
370nC @ 10V
6500pF @ 25V
±30V
-
520W (Tc)
120 mOhm @ 21.5A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC