Microsemi Corporation Produkte

2N6901

Microsemi Corporation

MOSFET N-CH 100V 1.69A TO-205AF

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 1.69A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 1nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 8.33W (Tc)
• Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 1.07A, 5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-39
• Package / Case: TO-205AF Metal Can

Paket: TO-205AF Metal Can

APTM20DUM05G

Microsemi Corporation

MOSFET 2N-CH 200V 317A SP6

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 317A
• Rds On (Max) @ Id, Vgs: 6 mOhm @ 158.5A, 10V
• Vgs(th) (Max) @ Id: 5V @ 10mA
• Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
• Power - Max: 1136W
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Supplier Device Package: SP6

Paket: SP6

JANTXV2N3811U

Microsemi Corporation

TRANS 2PNP 60V 0.05A

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
• Power - Max: 350mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

Paket: TO-78-6 Metal Can

JANTX1N3022BUR-1

Microsemi Corporation

DIODE ZENER 12V 1W DO213AB

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 9 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 9.1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF (Glass)
• Supplier Device Package: DO-213AB (MELF, LL41)

Paket: DO-213AB, MELF (Glass)

1N4754 G

Microsemi Corporation

DIODE ZENER 39V 1W DO204AL

• Voltage - Zener (Nom) (Vz): 39V
• Tolerance: ±10%
• Power - Max: 1W
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 29.7V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

Paket: DO-204AL, DO-41, Axial

SMBG4734CE3/TR13

Microsemi Corporation

DIODE ZENER 5.6V 2W SMBG

• Voltage - Zener (Nom) (Vz): 5.6V
• Tolerance: ±2%
• Power - Max: 2W
• Impedance (Max) (Zzt): 5 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: SMBG (DO-215AA)

Paket: DO-215AA, SMB Gull Wing

1N3337B

Microsemi Corporation

DIODE ZENER 75V 50W DO5

• Voltage - Zener (Nom) (Vz): 75V
• Tolerance: ±5%
• Power - Max: 50W
• Impedance (Max) (Zzt): 9 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 56V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5

Paket: DO-203AB, DO-5, Stud

JAN1N4132DUR-1

Microsemi Corporation

DIODE ZENER 82V DO213AA

• Voltage - Zener (Nom) (Vz): 82V
• Tolerance: ±1%
• Power - Max: -
• Impedance (Max) (Zzt): 800 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 62.4V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA
• Supplier Device Package: DO-213AA

Paket: DO-213AA

1N5950BUR-1

Microsemi Corporation

DIODE ZENER 110V 1.25W DO213AB

• Voltage - Zener (Nom) (Vz): 110V
• Tolerance: ±5%
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 300 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 83.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

Paket: DO-213AB, MELF

1PMT4126C/TR7

Microsemi Corporation

DIODE ZENER 51V 1W DO216

• Voltage - Zener (Nom) (Vz): 51V
• Tolerance: ±2%
• Power - Max: 1W
• Impedance (Max) (Zzt): 250 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 38.76V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216

Paket: DO-216AA

JAN1N5419US

Microsemi Corporation

DIODE GEN PURP 500V 3A D5B

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 500V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 250ns
• Current - Reverse Leakage @ Vr: 1µA @ 500V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, B
• Supplier Device Package: D-5B
• Operating Temperature - Junction: -65°C ~ 175°C

Paket: SQ-MELF, B

HSM880J/TR13

Microsemi Corporation

DIODE SCHOTTKY 80V 8A DO214AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 780mV @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 80V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: DO-214AB, SMC

JAN1N4454-1

Microsemi Corporation

DIODE GEN PURP 50V 200MA DO35

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 100nA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: DO-204AH, DO-35, Axial

5962-9215602MXA

Microsemi Corporation

IC FPGA 8K GATES 176-CPGA

• Number of LABs/CLBs: 1232
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 140
• Number of Gates: 8000
• Voltage - Supply: 4.5 V ~ 5.5 V
• Mounting Type: -
• Operating Temperature: -55°C ~ 125°C (TJ)
• Package / Case: 176-BCPGA
• Supplier Device Package: 176-CPGA (39.88x39.88)

Paket: 176-BCPGA

A42MX36-3PQG240I

Microsemi Corporation

IC FPGA 202 I/O 240QFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 2560
• Number of I/O: 202
• Number of Gates: 54000
• Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 240-BFQFP
• Supplier Device Package: 240-PQFP (32x32)

Paket: 240-BFQFP

AX250-1FG256M

Microsemi Corporation

IC FPGA 138 I/O 256FBGA

• Number of LABs/CLBs: 4224
• Number of Logic Elements/Cells: -
• Total RAM Bits: 55296
• Number of I/O: 138
• Number of Gates: 250000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 125°C (TA)
• Package / Case: 256-LBGA
• Supplier Device Package: 256-FPBGA (17x17)

Paket: 256-LBGA

M2GL010TS-1FG484M

Microsemi Corporation

IC FPGA 233 I/O 484FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 12084
• Total RAM Bits: 933888
• Number of I/O: 233
• Number of Gates: -
• Voltage - Supply: 1.14 V ~ 2.625 V
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 125°C (TJ)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

Paket: 484-BGA

EX64-TQ64

Microsemi Corporation

IC FPGA 41 I/O 64TQFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 128
• Total RAM Bits: -
• Number of I/O: 41
• Number of Gates: 3000
• Voltage - Supply: 2.3 V ~ 2.7 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (10x10)

Paket: 64-LQFP

MA5KP20CA

Microsemi Corporation

TVS DIODE 20VWM 32.4VC DO204AR

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 20V
• Voltage - Breakdown (Min): 22.2V
• Voltage - Clamping (Max) @ Ipp: 32.4V
• Current - Peak Pulse (10/1000µs): 154A
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: DO-204AR

Paket: DO-204AR, Axial

M1.5KE16CA

Microsemi Corporation

TVS DIODE 13.6VWM 22.5VC CASE1

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 13.6V
• Voltage - Breakdown (Min): 15.2V
• Voltage - Clamping (Max) @ Ipp: 22.5V
• Current - Peak Pulse (10/1000µs): 67A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

Paket: DO-201AA, DO-27, Axial

MXPLAD15KP16CA

Microsemi Corporation

TVS DIODE 16VWM 26VC PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 16V
• Voltage - Breakdown (Min): 17.8V
• Voltage - Clamping (Max) @ Ipp: 26V
• Current - Peak Pulse (10/1000µs): 576A
• Power - Peak Pulse: 15000W (15kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

Paket: Nonstandard SMD

1N6070

Microsemi Corporation

TVS DIODE 155VWM 292VC DO13

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 155V
• Voltage - Breakdown (Min): 171V
• Voltage - Clamping (Max) @ Ipp: 292V
• Current - Peak Pulse (10/1000µs): 5.1A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-13
• Supplier Device Package: DO-13

Paket: DO-13

MXPLAD6.5KP170AE3

Microsemi Corporation

TVS DIODE 170VWM 275VC PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 170V
• Voltage - Breakdown (Min): 189V
• Voltage - Clamping (Max) @ Ipp: 275V
• Current - Peak Pulse (10/1000µs): 23.6A
• Power - Peak Pulse: 6500W (6.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

Paket: Nonstandard SMD

JANTX1N6132AUS

Microsemi Corporation

TVS DIODE 91.2VWM BSQMELF

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 91.2V
• Voltage - Breakdown (Min): 114V
• Voltage - Clamping (Max) @ Ipp: 165.1V
• Current - Peak Pulse (10/1000µs): 3A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, B
• Supplier Device Package: B, SQ-MELF

Paket: SQ-MELF, B

MXSMLG85A

Microsemi Corporation

TVS DIODE 85VWM 137VC DO215AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 85V
• Voltage - Breakdown (Min): 94.4V
• Voltage - Clamping (Max) @ Ipp: 137V
• Current - Peak Pulse (10/1000µs): 20.8A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMLG (DO-215AB)

Paket: DO-215AB, SMC Gull Wing

5KP13CAE3/TR13

Microsemi Corporation

TVS DIODE 13VWM 21.5VC P600

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 13V
• Voltage - Breakdown (Min): 14.4V
• Voltage - Clamping (Max) @ Ipp: 21.5V
• Current - Peak Pulse (10/1000µs): 233A
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: P600, Axial
• Supplier Device Package: P600

Paket: P600, Axial

SMCJ6069E3/TR13

Microsemi Corporation

TVS DIODE 145VWM 274VC SMCJ

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 145V
• Voltage - Breakdown (Min): 162V
• Voltage - Clamping (Max) @ Ipp: 274V
• Current - Peak Pulse (10/1000µs): 5.5A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

Paket: DO-214AB, SMC

MSMLJ170CA

Microsemi Corporation

TVS DIODE 170VWM 275VC DO214AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 170V
• Voltage - Breakdown (Min): 189V
• Voltage - Clamping (Max) @ Ipp: 275V
• Current - Peak Pulse (10/1000µs): 11A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB

Paket: DO-214AB, SMC