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Microsemi Corporation Produkte

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APTGT200A170D3G
Microsemi Corporation

IGBT MODULE TRENCH PHASE LEG D3

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 400A
  • Power - Max: 1250W
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 200A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 17nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: D-3 Module
  • Supplier Device Package: D3
Paket: D-3 Module
Lager7.824
JANTXV2N3421U4
Microsemi Corporation

TRANS NPN 125V 3A

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager3.824
JAN2N3250A
Microsemi Corporation

TRANS PNP 60V 0.2A TO-39

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
  • Power - Max: 360mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
Paket: TO-205AD, TO-39-3 Metal Can
Lager7.184
JAN2N2919L
Microsemi Corporation

TRANS 2NPN 60V 0.03A TO78

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 30mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
Paket: TO-78-6 Metal Can
Lager2.848
JANTX1N4972DUS
Microsemi Corporation

DIODE ZENER 39V 5W D5B

  • Voltage - Zener (Nom) (Vz): 39V
  • Tolerance: ±1%
  • Power - Max: 5W
  • Impedance (Max) (Zzt): 14 Ohms
  • Current - Reverse Leakage @ Vr: 2µA @ 29.7V
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, E
  • Supplier Device Package: D-5B
Paket: SQ-MELF, E
Lager3.696
JANTX1N4956DUS
Microsemi Corporation

DIODE ZENER 8.2V 5W D5B

  • Voltage - Zener (Nom) (Vz): 8.2V
  • Tolerance: ±1%
  • Power - Max: 5W
  • Impedance (Max) (Zzt): 1.5 Ohms
  • Current - Reverse Leakage @ Vr: 50µA @ 6.2V
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, E
  • Supplier Device Package: D-5B
Paket: SQ-MELF, E
Lager4.688
1N5935A G
Microsemi Corporation

DIODE ZENER 27V 1.25W DO204AL

  • Voltage - Zener (Nom) (Vz): 27V
  • Tolerance: ±10%
  • Power - Max: 1.25W
  • Impedance (Max) (Zzt): 23 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 20.6V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
Paket: DO-204AL, DO-41, Axial
Lager6.800
1N4910A
Microsemi Corporation

DIODE ZENER 12.8V 400MW DO7

  • Voltage - Zener (Nom) (Vz): 12.8V
  • Tolerance: ±5%
  • Power - Max: 400mW
  • Impedance (Max) (Zzt): 50 Ohms
  • Current - Reverse Leakage @ Vr: -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 100°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AA, DO-7, Axial
  • Supplier Device Package: DO-7
Paket: DO-204AA, DO-7, Axial
Lager5.232
1N4914
Microsemi Corporation

DIODE ZENER 12.8V 400MW DO7

  • Voltage - Zener (Nom) (Vz): 12.8V
  • Tolerance: ±5%
  • Power - Max: 400mW
  • Impedance (Max) (Zzt): 25 Ohms
  • Current - Reverse Leakage @ Vr: -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -25°C ~ 100°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AA, DO-7, Axial
  • Supplier Device Package: DO-7
Paket: DO-204AA, DO-7, Axial
Lager2.000
JAN1N3044DUR-1
Microsemi Corporation

DIODE ZENER 100V 1W DO213AB

  • Voltage - Zener (Nom) (Vz): 100V
  • Tolerance: ±1%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 350 Ohms
  • Current - Reverse Leakage @ Vr: 10µA @ 76V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: DO-213AB (MELF, LL41)
Paket: DO-213AB, MELF
Lager7.264
JAN1N4132-1
Microsemi Corporation

DIODE ZENER 82V DO35

  • Voltage - Zener (Nom) (Vz): 82V
  • Tolerance: ±5%
  • Power - Max: -
  • Impedance (Max) (Zzt): 800 Ohms
  • Current - Reverse Leakage @ Vr: 10nA @ 62.4V
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35 (DO-204AH)
Paket: DO-204AH, DO-35, Axial
Lager7.632
1N4620-1
Microsemi Corporation

DIODE ZENER 3.3V 500MW DO7

  • Voltage - Zener (Nom) (Vz): 3.3V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 1650 Ohms
  • Current - Reverse Leakage @ Vr: 3.5µA @ 1.5V
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AA, DO-7, Axial
  • Supplier Device Package: DO-7
Paket: DO-204AA, DO-7, Axial
Lager5.984
1PMT4103C/TR13
Microsemi Corporation

DIODE ZENER 9.1V 1W DO216

  • Voltage - Zener (Nom) (Vz): 9.1V
  • Tolerance: ±2%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 200 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 6.92V
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-216AA
  • Supplier Device Package: DO-216
Paket: DO-216AA
Lager5.696
MBR2090CTE3/TU
Microsemi Corporation

DIODE SCHOTTKY 20A 90V TO220AB

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
Paket: -
Lager3.168
CPT400100D
Microsemi Corporation

DIODE MODULE 100V 200A TO244AB

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 200A
  • Voltage - Forward (Vf) (Max) @ If: 890mV @ 200A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 100V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: TO-244AB
  • Supplier Device Package: TO-244AB
Paket: TO-244AB
Lager2.752
hot LX1664CD
Microsemi Corporation

IC PWM DUAL OUT 5BIT DAC 16SOIC

  • Applications: Controller, Intel Pentium? II
  • Voltage - Input: 10.8 V ~ 13.2 V
  • Number of Outputs: 2
  • Voltage - Output: 1.8 V ~ 2.8 V
  • Operating Temperature: 0°C ~ 70°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
Paket: 16-SOIC (0.154", 3.90mm Width)
Lager44.568
LX8385-33IP
Microsemi Corporation

IC REG LIN 3.3V 3A TO220/POWER

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 10V
  • Voltage - Output (Min/Fixed): 3.3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 1.5V @ 3A
  • Current - Output: 3A
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 10mA
  • PSRR: 83dB (120Hz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -25°C ~ 125°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220, Power
Paket: TO-220-3
Lager4.992
A3PN125-Z2VQ100
Microsemi Corporation

IC FPGA 71 I/O 100VQFP

  • Number of LABs/CLBs: -
  • Number of Logic Elements/Cells: -
  • Total RAM Bits: 36864
  • Number of I/O: 71
  • Number of Gates: 125000
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Mounting Type: Surface Mount
  • Operating Temperature: -20°C ~ 85°C (TJ)
  • Package / Case: 100-TQFP
  • Supplier Device Package: 100-VQFP (14x14)
Paket: 100-TQFP
Lager4.896
hot AGLN020V5-CSG81
Microsemi Corporation

IC FPGA 52 I/O 81CSP

  • Number of LABs/CLBs: -
  • Number of Logic Elements/Cells: 520
  • Total RAM Bits: -
  • Number of I/O: 52
  • Number of Gates: 20000
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Mounting Type: Surface Mount
  • Operating Temperature: -20°C ~ 85°C (TJ)
  • Package / Case: 81-WFBGA, CSBGA
  • Supplier Device Package: 81-CSP (5x5)
Paket: 81-WFBGA, CSBGA
Lager4.512
MP6KE15A
Microsemi Corporation

TVS DIODE 12.8VWM 21.2VC T18

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 12.8V
  • Voltage - Breakdown (Min): 14.3V
  • Voltage - Clamping (Max) @ Ipp: 21.2V
  • Current - Peak Pulse (10/1000µs): 28A
  • Power - Peak Pulse: 600W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: T-18
Paket: T-18, Axial
Lager5.634
MA5KP7.5CAE3
Microsemi Corporation

TVS DIODE 7.5VWM 12.9VC DO204AR

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 7.5V
  • Voltage - Breakdown (Min): 8.33V
  • Voltage - Clamping (Max) @ Ipp: 12.9V
  • Current - Peak Pulse (10/1000µs): 388A
  • Power - Peak Pulse: 5000W (5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AR, Axial
  • Supplier Device Package: DO-204AR
Paket: DO-204AR, Axial
Lager6.030
1N6366
Microsemi Corporation

TVS DIODE 10VWM 14.5VC DO13

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 10V
  • Voltage - Breakdown (Min): 11.7V
  • Voltage - Clamping (Max) @ Ipp: 14.5V
  • Current - Peak Pulse (10/1000µs): 90A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-13
  • Supplier Device Package: DO-13
Paket: DO-13
Lager4.536
JAN1N6103US
Microsemi Corporation

TVS DIODE 5.7VWM 11.76VC SQMELF

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 5.7V
  • Voltage - Breakdown (Min): 6.77V
  • Voltage - Clamping (Max) @ Ipp: 11.76V
  • Current - Peak Pulse (10/1000µs): 42.37A
  • Power - Peak Pulse: 500W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, B
  • Supplier Device Package: B, SQ-MELF
Paket: SQ-MELF, B
Lager4.392
MXLLCE24AE3
Microsemi Corporation

TVS DIODE 24VWM 38.9VC CASE1

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 24V
  • Voltage - Breakdown (Min): 26.7V
  • Voltage - Clamping (Max) @ Ipp: 38.9V
  • Current - Peak Pulse (10/1000µs): 39A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 100pF @ 1MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: CASE-1
Paket: DO-201AA, DO-27, Axial
Lager4.698
MAPLAD6.5KP17CAE3
Microsemi Corporation

TVS DIODE 17VWM 27.6VC MINIPLAD

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 17V
  • Voltage - Breakdown (Min): 18.9V
  • Voltage - Clamping (Max) @ Ipp: 27.6V
  • Current - Peak Pulse (10/1000µs): 236A
  • Power - Peak Pulse: 6500W (6.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Nonstandard SMD
  • Supplier Device Package: Mini-PLAD
Paket: Nonstandard SMD
Lager2.268
MASMBJ64CAE3
Microsemi Corporation

TVS DIODE 64VWM 103VC DO214AA

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 64V
  • Voltage - Breakdown (Min): 71.1V
  • Voltage - Clamping (Max) @ Ipp: 103V
  • Current - Peak Pulse (10/1000µs): 5.8A
  • Power - Peak Pulse: 600W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMBJ (DO-214AA)
Paket: DO-214AA, SMB
Lager4.716
SMCJ6066AE3/TR13
Microsemi Corporation

TVS DIODE 110VWM 182VC SMCJ

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 110V
  • Voltage - Breakdown (Min): 124V
  • Voltage - Clamping (Max) @ Ipp: 182V
  • Current - Peak Pulse (10/1000µs): 8.2A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMCJ)
Paket: DO-214AB, SMC
Lager7.092
JANTXV2N5014
Microsemi Corporation

TRANS NPN 900V 0.2A TO5

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200 mA
  • Voltage - Collector Emitter Breakdown (Max): 900 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5AA
Paket: -
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