Microsemi Corporation Produkte

JANTX2N1711S

Microsemi Corporation

TRANS NPN 30V 0.5A TO-39

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 30V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
• Current - Collector Cutoff (Max): 10nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 800mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-205AD, TO-39-3 Metal Can
• Supplier Device Package: TO-39

Paket: TO-205AD, TO-39-3 Metal Can

JANTXV2N4957UB

Microsemi Corporation

TRANS PNP 30V 30MA

• Transistor Type: PNP
• Voltage - Collector Emitter Breakdown (Max): 30V
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
• Gain: 25dB
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
• Current - Collector (Ic) (Max): 30mA
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 3-SMD, No Lead
• Supplier Device Package: UB

Paket: 3-SMD, No Lead

SMBG5941A/TR13

Microsemi Corporation

DIODE ZENER 47V 2W SMBG

• Voltage - Zener (Nom) (Vz): 47V
• Tolerance: ±10%
• Power - Max: 2W
• Impedance (Max) (Zzt): 67 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 35.8V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: SMBG (DO-215AA)

Paket: DO-215AA, SMB Gull Wing

SMBG5927CE3/TR13

Microsemi Corporation

DIODE ZENER 12V 2W SMBG

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±2%
• Power - Max: 2W
• Impedance (Max) (Zzt): 6.5 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 9.1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: SMBG (DO-215AA)

Paket: DO-215AA, SMB Gull Wing

JANTX1N4625DUR-1

Microsemi Corporation

DIODE ZENER 5.1V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 5.1V
• Tolerance: ±1%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 1500 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 3V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA

Paket: DO-213AA (Glass)

JANTXV1N973B-1

Microsemi Corporation

DIODE ZENER 33V 500MW DO35

• Voltage - Zener (Nom) (Vz): 33V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 58 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 25V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

Paket: DO-204AH, DO-35, Axial

CDLL985A

Microsemi Corporation

DIODE ZENER 100V 500MW DO213AB

• Voltage - Zener (Nom) (Vz): 100V
• Tolerance: ±10%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 500 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 76V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

Paket: DO-213AB, MELF

2EZ47D10/TR12

Microsemi Corporation

DIODE ZENER 47V 2W DO204AL

• Voltage - Zener (Nom) (Vz): 47V
• Tolerance: ±10%
• Power - Max: 2W
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 35.8V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

Paket: DO-204AL, DO-41, Axial

M2S090S-1FGG676I

Microsemi Corporation

IC FPGA SOC 90K LUTS 676FBGA

• Architecture: MCU, FPGA
• Core Processor: ARM? Cortex?-M3
• Flash Size: 512KB
• RAM Size: 64KB
• Peripherals: DDR, PCIe, SERDES
• Connectivity: CAN, Ethernet, I2C, SPI, UART/USART, USB
• Speed: 166MHz
• Primary Attributes: FPGA - 90K Logic Modules
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 676-BGA
• Supplier Device Package: 676-FBGA (27x27)

Paket: 676-BGA

A2F500M3G-PQG208I

Microsemi Corporation

IC FPGA 500K GATES 512KB 208QFP

• Architecture: MCU, FPGA
• Core Processor: ARM? Cortex?-M3
• Flash Size: 512KB
• RAM Size: 64KB
• Peripherals: DMA, POR, WDT
• Connectivity: Ethernet, I2C, SPI, UART/USART
• Speed: 80MHz
• Primary Attributes: ProASIC?3 FPGA, 500K Gates, 11520 D-Flip-Flops
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 208-BFQFP
• Supplier Device Package: 208-PQFP (28x28)

Paket: 208-BFQFP

A1460A-CQ196M

Microsemi Corporation

IC FPGA 168 I/O 196CQFP

• Number of LABs/CLBs: 848
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 168
• Number of Gates: 6000
• Voltage - Supply: 4.5 V ~ 5.5 V
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 125°C (TC)
• Package / Case: 196-BCQFP with Tie Bar
• Supplier Device Package: 196-CQFP (63.5x63.5)

Paket: 196-BCQFP with Tie Bar

AX2000-1FG896M

Microsemi Corporation

IC FPGA 586 I/O 896FBGA

• Number of LABs/CLBs: 32256
• Number of Logic Elements/Cells: -
• Total RAM Bits: 294912
• Number of I/O: 586
• Number of Gates: 2000000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 125°C (TA)
• Package / Case: 896-BGA
• Supplier Device Package: 896-FBGA (31x31)

Paket: 896-BGA

AGLN020V5-QNG68

Microsemi Corporation

IC FPGA 49 I/O 68QFN

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 520
• Total RAM Bits: -
• Number of I/O: 49
• Number of Gates: 20000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -20°C ~ 85°C (TJ)
• Package / Case: 68-VFQFN Exposed Pad
• Supplier Device Package: 68-QFN (8x8)

Paket: 68-VFQFN Exposed Pad

MASMCGLCE60AE3

Microsemi Corporation

TVS DIODE 60VWM 96.8VC DO215AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 60V
• Voltage - Breakdown (Min): 66.7V
• Voltage - Clamping (Max) @ Ipp: 96.8V
• Current - Peak Pulse (10/1000µs): 15.5A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 90pF @ 1MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMCG (DO-215AB)

Paket: DO-215AB, SMC Gull Wing

SMDA24-6E3

Microsemi Corporation

TVS DIODE 24VWM 55VC 8SO

• Type: Zener
• Unidirectional Channels: 6
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 24V
• Voltage - Breakdown (Min): 26.7V
• Voltage - Clamping (Max) @ Ipp: 55V
• Current - Peak Pulse (10/1000µs): 5A (8/20µs)
• Power - Peak Pulse: 300W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 88pF @ 1MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

Paket: 8-SOIC (0.154", 3.90mm Width)

MPLAD18KP64AE3

Microsemi Corporation

TVS DIODE 103VC 175A PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 64V
• Voltage - Breakdown (Min): 71.1V
• Voltage - Clamping (Max) @ Ipp: 103V
• Current - Peak Pulse (10/1000µs): 175A
• Power - Peak Pulse: 18000W (18kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

Paket: Nonstandard SMD

MXLCE160AE3

Microsemi Corporation

TVS DIODE 160VWM 259VC CASE1

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 160V
• Voltage - Breakdown (Min): 178V
• Voltage - Clamping (Max) @ Ipp: 259V
• Current - Peak Pulse (10/1000µs): 5.8A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 90pF @ 1MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

Paket: DO-201AA, DO-27, Axial

MXSMLJ40AE3

Microsemi Corporation

TVS DIODE 40VWM 64.5VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 40V
• Voltage - Breakdown (Min): 44.4V
• Voltage - Clamping (Max) @ Ipp: 64.5V
• Current - Peak Pulse (10/1000µs): 46.4A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB

Paket: DO-214AB, SMC

MXLP4KE350CA

Microsemi Corporation

TVS DIODE 300VWM 482VC DO41

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 300V
• Voltage - Breakdown (Min): 333V
• Voltage - Clamping (Max) @ Ipp: 482V
• Current - Peak Pulse (10/1000µs): 1A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

Paket: DO-204AL, DO-41, Axial

MXLP4KE300CAE3

Microsemi Corporation

TVS DIODE 256VWM 414VC DO41

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 256V
• Voltage - Breakdown (Min): 285V
• Voltage - Clamping (Max) @ Ipp: 414V
• Current - Peak Pulse (10/1000µs): 1A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

Paket: DO-204AL, DO-41, Axial

MXLSMLG22A

Microsemi Corporation

TVS DIODE 22VWM 35.5VC DO215AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 22V
• Voltage - Breakdown (Min): 24.4V
• Voltage - Clamping (Max) @ Ipp: 35.5V
• Current - Peak Pulse (10/1000µs): 84.4A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMLG (DO-215AB)

Paket: DO-215AB, SMC Gull Wing

MXLSMBJ150A

Microsemi Corporation

TVS DIODE 150VWM 243VC DO214AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 150V
• Voltage - Breakdown (Min): 167V
• Voltage - Clamping (Max) @ Ipp: 243V
• Current - Peak Pulse (10/1000µs): 2.5A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

Paket: DO-214AA, SMB

MASMCG36AE3

Microsemi Corporation

TVS DIODE 36VWM 58.1VC DO215AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 36V
• Voltage - Breakdown (Min): 40V
• Voltage - Clamping (Max) @ Ipp: 58.1V
• Current - Peak Pulse (10/1000µs): 25.8A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMCG (DO-215AB)

Paket: DO-215AB, SMC Gull Wing

5KP17CAE3/TR13

Microsemi Corporation

TVS DIODE 17VWM 27.6VC P600

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 17V
• Voltage - Breakdown (Min): 18.9V
• Voltage - Clamping (Max) @ Ipp: 27.6V
• Current - Peak Pulse (10/1000µs): 181A
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: P600, Axial
• Supplier Device Package: P600

Paket: P600, Axial

5KP120E3/TR13

Microsemi Corporation

TVS DIODE 120VWM 213VC P600

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 120V
• Voltage - Breakdown (Min): 133V
• Voltage - Clamping (Max) @ Ipp: 213V
• Current - Peak Pulse (10/1000µs): 23.5A
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: P600, Axial
• Supplier Device Package: P600

Paket: P600, Axial

SMCG5652A/TR13

Microsemi Corporation

TVS DIODE 53VWM 85VC DO215AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 53V
• Voltage - Breakdown (Min): 58.9V
• Voltage - Clamping (Max) @ Ipp: 85V
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: DO-215AB (SMCG)

Paket: DO-215AB, SMC Gull Wing

SMDA03C-4-2E3/TR13

Microsemi Corporation

TVS DIODE 3.3VWM 9VC 8SOIC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 4
• Voltage - Reverse Standoff (Typ): 3.3V
• Voltage - Breakdown (Min): 4V
• Voltage - Clamping (Max) @ Ipp: 9V
• Current - Peak Pulse (10/1000µs): 5A (8/20µs)
• Power - Peak Pulse: 300W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 300pF @ 1MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

Paket: 8-SOIC (0.154", 3.90mm Width)

APT130SM70J

Microsemi Corporation

SICFET N-CH 700V 78A SOT227

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 700 V
• Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 2.4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 700 V
• Vgs (Max): +25V, -10V
• FET Feature: -
• Power Dissipation (Max): 273W (Tc)
• Rds On (Max) @ Id, Vgs: 45mOhm @ 60A, 20V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227 (ISOTOP®)
• Package / Case: SOT-227-4, miniBLOC

Paket: -

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