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Renesas Electronics America Produkte - Transistoren - FETs, MOSFET - Einzeln

Aufzeichnungen 341
Page  11/12
Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
HAT2287WP-EL-E
Renesas Electronics America

MOSFET N-CH WPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 94 mOhm @ 8.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WPAK
  • Package / Case: 8-PowerWDFN
Paket: 8-PowerWDFN
Lager3.280
MOSFET (Metal Oxide)
200V
17A (Ta)
10V
-
26nC @ 10V
1200pF @ 25V
±30V
-
30W (Tc)
94 mOhm @ 8.5A, 10V
150°C (TJ)
Surface Mount
8-WPAK
8-PowerWDFN
HAT2131R-EL-E
Renesas Electronics America

MOSFET N-CH 8SO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 350V
  • Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 450mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager5.600
MOSFET (Metal Oxide)
350V
900mA (Ta)
4V, 10V
-
20nC @ 10V
460pF @ 25V
±20V
-
2.5W (Ta)
3 Ohm @ 450mA, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
H7N1002LSTL-E
Renesas Electronics America

MOSFET N-CH 100V LDPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9700pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 37.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-LDPAK
  • Package / Case: SC-83
Paket: SC-83
Lager2.832
MOSFET (Metal Oxide)
100V
75A (Ta)
4.5V, 10V
-
155nC @ 10V
9700pF @ 10V
±20V
-
100W (Tc)
10 mOhm @ 37.5A, 10V
150°C (TJ)
Surface Mount
4-LDPAK
SC-83
H7N1002LS-E
Renesas Electronics America

MOSFET N-CH 100V LDPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9700pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 37.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-LDPAK
  • Package / Case: SC-83
Paket: SC-83
Lager3.408
MOSFET (Metal Oxide)
100V
75A (Ta)
4.5V, 10V
-
155nC @ 10V
9700pF @ 10V
±20V
-
100W (Tc)
10 mOhm @ 37.5A, 10V
150°C (TJ)
Surface Mount
4-LDPAK
SC-83
2SK3431-Z-E1-AZ
Renesas Electronics America

MOSFET N-CH 40V 83A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 42A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager2.064
MOSFET (Metal Oxide)
40V
83A (Tc)
4V, 10V
-
110nC @ 10V
6100pF @ 10V
±20V
-
1.5W (Ta), 100W (Tc)
5.6 mOhm @ 42A, 10V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
2SK3431-AZ
Renesas Electronics America

MOSFET N-CH 40V 83A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 42A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager3.424
MOSFET (Metal Oxide)
40V
83A (Tc)
4V, 10V
-
110nC @ 10V
6100pF @ 10V
±20V
-
1.5W (Ta), 100W (Tc)
5.6 mOhm @ 42A, 10V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
2SK3430-Z-E1-AZ
Renesas Electronics America

MOSFET N-CH 40V 80A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 84W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 40A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager3.968
MOSFET (Metal Oxide)
40V
80A (Tc)
4V, 10V
-
50nC @ 10V
2800pF @ 10V
±20V
-
1.5W (Ta), 84W (Tc)
7.3 mOhm @ 40A, 10V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
2SK3430-AZ
Renesas Electronics America

MOSFET N-CH 40V 80A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 84W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 40A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager3.568
MOSFET (Metal Oxide)
40V
80A (Tc)
4V, 10V
-
50nC @ 10V
2800pF @ 10V
±20V
-
1.5W (Ta), 84W (Tc)
7.3 mOhm @ 40A, 10V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot 2SK1518-E
Renesas Electronics America

MOSFET N-CH 500V 20A TO3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 10V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 270 mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
Paket: TO-3P-3, SC-65-3
Lager10.668
MOSFET (Metal Oxide)
500V
20A (Ta)
10V
-
-
3050pF @ 10V
±30V
-
120W (Tc)
270 mOhm @ 10A, 10V
150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
RQJ0303PGDQA#H6
Renesas Electronics America

MOSFET P-CH 30V 3.3A 3MPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 10V
  • Vgs (Max): +10V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 68 mOhm @ 1.6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-MPAK
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: TO-236-3, SC-59, SOT-23-3
Lager6.272
MOSFET (Metal Oxide)
30V
3.3A (Ta)
4.5V, 10V
-
12nC @ 10V
625pF @ 10V
+10V, -20V
-
800mW (Ta)
68 mOhm @ 1.6A, 10V
150°C (TJ)
Surface Mount
3-MPAK
TO-236-3, SC-59, SOT-23-3
hot UPA2738GR-E1-AT
Renesas Electronics America

MOSFET P-CH 30V 10A 8SOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-PowerSOIC (0.173", 4.40mm Width)
Paket: 8-PowerSOIC (0.173", 4.40mm Width)
Lager434.568
MOSFET (Metal Oxide)
30V
10A (Ta)
4.5V, 10V
-
37nC @ 10V
1450pF @ 10V
±20V
-
1.1W (Ta)
15 mOhm @ 10A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-PowerSOIC (0.173", 4.40mm Width)
hot UPA2736GR-E1-AT
Renesas Electronics America

MOSFET P-CH 30V 14A 8SOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 14A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-PowerSOIC (0.173", 4.40mm Width)
Paket: 8-PowerSOIC (0.173", 4.40mm Width)
Lager414.252
MOSFET (Metal Oxide)
30V
14A (Ta)
4.5V, 10V
-
80nC @ 10V
3400pF @ 10V
±20V
-
1.1W (Ta)
7 mOhm @ 14A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-PowerSOIC (0.173", 4.40mm Width)
UPA2735GR-E1-AT
Renesas Electronics America

MOSFET P-CH 30V 16A 8SOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 16A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-PowerSOIC (0.173", 4.40mm Width)
Paket: 8-PowerSOIC (0.173", 4.40mm Width)
Lager2.000
MOSFET (Metal Oxide)
30V
16A (Ta)
4.5V, 10V
-
195nC @ 10V
6250pF @ 10V
±20V
-
1.1W (Ta)
5 mOhm @ 16A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-PowerSOIC (0.173", 4.40mm Width)
RJL6020DPK-00#T0
Renesas Electronics America

MOSFET N-CH 600V 30A TO3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 210 mOhm @ 15A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
Paket: TO-3P-3, SC-65-3
Lager4.032
MOSFET (Metal Oxide)
600V
30A (Ta)
10V
-
130nC @ 10V
4750pF @ 25V
±30V
-
200W (Tc)
210 mOhm @ 15A, 10V
150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
RJL6018DPK-00#T0
Renesas Electronics America

MOSFET N-CH 600V 27A TO3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3830pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 265 mOhm @ 13.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
Paket: TO-3P-3, SC-65-3
Lager5.392
MOSFET (Metal Oxide)
600V
27A (Ta)
10V
-
98nC @ 10V
3830pF @ 25V
±30V
-
200W (Tc)
265 mOhm @ 13.5A, 10V
150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
RJL6013DPE-00#J3
Renesas Electronics America

MOSFET N-CH 600V 11A LDPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 810 mOhm @ 5.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-LDPAK
  • Package / Case: SC-83
Paket: SC-83
Lager7.392
MOSFET (Metal Oxide)
600V
11A (Ta)
10V
-
38nC @ 10V
1400pF @ 25V
±30V
-
100W (Tc)
810 mOhm @ 5.5A, 10V
150°C (TJ)
Surface Mount
4-LDPAK
SC-83
RJL6012DPE-00#J3
Renesas Electronics America

MOSFET N-CH 600V 10A LDPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-LDPAK
  • Package / Case: SC-83
Paket: SC-83
Lager7.840
MOSFET (Metal Oxide)
600V
10A (Ta)
10V
-
28nC @ 10V
1050pF @ 25V
±30V
-
100W (Tc)
1.1 Ohm @ 5A, 10V
150°C (TJ)
Surface Mount
4-LDPAK
SC-83
RJL5020DPK-00#T0
Renesas Electronics America

MOSFET N-CH 500V 38A TO3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 135 mOhm @ 19A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
Paket: TO-3P-3, SC-65-3
Lager2.880
MOSFET (Metal Oxide)
500V
38A (Ta)
10V
-
140nC @ 10V
4750pF @ 25V
±30V
-
200W (Tc)
135 mOhm @ 19A, 10V
150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
RJL5014DPK-00#T0
Renesas Electronics America

MOSFET N-CH 500V 19A TO3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 9.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
Paket: TO-3P-3, SC-65-3
Lager6.368
MOSFET (Metal Oxide)
500V
19A (Ta)
10V
-
43nC @ 10V
1700pF @ 25V
±30V
-
150W (Tc)
400 mOhm @ 9.5A, 10V
150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
RJL5012DPP-M0#T2
Renesas Electronics America

MOSFET N-CH 500V 12A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 27.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FL
  • Package / Case: TO-220-3 Full Pack
Paket: TO-220-3 Full Pack
Lager2.192
MOSFET (Metal Oxide)
500V
12A (Ta)
10V
-
27.8nC @ 10V
1050pF @ 25V
±30V
-
30W (Tc)
700 mOhm @ 6A, 10V
150°C (TJ)
Through Hole
TO-220FL
TO-220-3 Full Pack
RJL5012DPE-00#J3
Renesas Electronics America

MOSFET N-CH 500V 12A LDPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 27.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-LDPAK
  • Package / Case: SC-83
Paket: SC-83
Lager6.160
MOSFET (Metal Oxide)
500V
12A (Ta)
10V
-
27.8nC @ 10V
1050pF @ 25V
±30V
-
100W (Tc)
700 mOhm @ 6A, 10V
150°C (TJ)
Surface Mount
4-LDPAK
SC-83
RJK6035DPP-E0#T2
Renesas Electronics America

MOSFET N-CH 600V 6A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 765pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 29.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.37 Ohm @ 3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
Paket: TO-220-3 Full Pack
Lager5.920
MOSFET (Metal Oxide)
600V
6A (Ta)
10V
-
20nC @ 10V
765pF @ 25V
±30V
-
29.5W (Tc)
1.37 Ohm @ 3A, 10V
150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
RJK6026DPE-00#J3
Renesas Electronics America

MOSFET N-CH 600V 5A LDPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 62.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-LDPAK
  • Package / Case: SC-83
Paket: SC-83
Lager7.488
MOSFET (Metal Oxide)
600V
5A (Ta)
10V
-
14nC @ 10V
440pF @ 25V
±30V
-
62.5W (Tc)
2.4 Ohm @ 2.5A, 10V
150°C (TJ)
Surface Mount
4-LDPAK
SC-83
RJK6020DPK-00#T0
Renesas Electronics America

MOSFET N-CH 600V 32A TO3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 121nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 175 mOhm @ 16A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
Paket: TO-3P-3, SC-65-3
Lager2.912
MOSFET (Metal Oxide)
600V
32A (Ta)
10V
-
121nC @ 10V
5150pF @ 25V
±30V
-
200W (Tc)
175 mOhm @ 16A, 10V
150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
RJK6018DPM-00#T1
Renesas Electronics America

MOSFET N-CH 600V 30A TO3PFM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 235 mOhm @ 15A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PFM
  • Package / Case: TO-3PFM, SC-93-3
Paket: TO-3PFM, SC-93-3
Lager6.288
MOSFET (Metal Oxide)
600V
30A (Ta)
10V
-
92nC @ 10V
4100pF @ 25V
±30V
-
60W (Tc)
235 mOhm @ 15A, 10V
150°C (TJ)
Through Hole
TO-3PFM
TO-3PFM, SC-93-3
RJK6018DPK-00#T0
Renesas Electronics America

MOSFET N-CH 600V 30A TO3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 235 mOhm @ 15A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
Paket: TO-3P-3, SC-65-3
Lager3.184
MOSFET (Metal Oxide)
600V
30A (Ta)
10V
-
92nC @ 10V
4100pF @ 25V
±30V
-
200W (Tc)
235 mOhm @ 15A, 10V
150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
RJK6015DPM-00#T1
Renesas Electronics America

MOSFET N-CH 600V 21A TO3PFM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 360 mOhm @ 10.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PFM
  • Package / Case: TO-3PFM, SC-93-3
Paket: TO-3PFM, SC-93-3
Lager4.288
MOSFET (Metal Oxide)
600V
21A (Ta)
10V
-
67nC @ 10V
2600pF @ 25V
±30V
-
60W (Tc)
360 mOhm @ 10.5A, 10V
150°C (TJ)
Through Hole
TO-3PFM
TO-3PFM, SC-93-3
RJK6015DPK-00#T0
Renesas Electronics America

MOSFET N-CH 600V 21A TO3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 360 mOhm @ 10.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
Paket: TO-3P-3, SC-65-3
Lager3.264
MOSFET (Metal Oxide)
600V
21A (Ta)
10V
-
67nC @ 10V
2600pF @ 25V
±30V
-
150W (Tc)
360 mOhm @ 10.5A, 10V
150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
RJK6014DPP-E0#T2
Renesas Electronics America

MOSFET N-CH 600V 16A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 575 mOhm @ 8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
Paket: TO-220-3 Full Pack
Lager4.880
MOSFET (Metal Oxide)
600V
16A (Ta)
10V
-
45nC @ 10V
1800pF @ 25V
±30V
-
35W (Tc)
575 mOhm @ 8A, 10V
150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
RJK6013DPP-E0#T2
Renesas Electronics America

MOSFET N-CH 600V 11A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 5.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
Paket: TO-220-3 Full Pack
Lager3.200
MOSFET (Metal Oxide)
600V
11A (Ta)
10V
-
37.5nC @ 10V
1450pF @ 25V
±30V
-
30W (Tc)
700 mOhm @ 5.5A, 10V
150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack