Page 10 - Rohm Semiconductor Produkte - Transistoren - FETs, MOSFET - Einzeln

RX3P07CBHC16

Rohm Semiconductor

NCH 100V 70A, TO-220AB, POWER M

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 135W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

Paket: -

Lager3.000

MOSFET (Metal Oxide)

100 V

70A (Tc)

6V, 10V

4V @ 1mA

73 nC @ 10 V

4650 pF @ 50 V

±20V

-

135W (Tc)

5.2mOhm @ 70A, 10V

150°C (TJ)

Through Hole

TO-220AB

TO-220-3

RQ1E050RPHZGTR

Rohm Semiconductor

PCH -30V -5A SMALL SIGNAL MOSFET

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Supplier Device Package: TSMT8
Package / Case: 8-SMD, Flat Lead

Paket: -

Lager9.000

MOSFET (Metal Oxide)

30 V

5A (Ta)

4V, 10V

2.5V @ 1mA

13 nC @ 4 V

1300 pF @ 10 V

±20V

-

1.1W (Ta)

31mOhm @ 5A, 10V

-55°C ~ 150°C

Surface Mount

TSMT8

8-SMD, Flat Lead

RQ7P035ATTCR

Rohm Semiconductor

PCH -100V -3.5A POWER MOSFET : R

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 111mOhm @ 3.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSMT8
Package / Case: 8-SMD, Flat Lead

Paket: -

Request a Quote

MOSFET (Metal Oxide)

100 V

3.5A (Ta)

4.5V, 10V

2.5V @ 1mA

40 nC @ 10 V

1540 pF @ 50 V

±20V

-

1.1W (Ta)

111mOhm @ 3.5A, 10V

150°C (TJ)

Surface Mount

TSMT8

8-SMD, Flat Lead

RH6L040BGTB1

Rohm Semiconductor

NCH 60V 65A, HSMT8, POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 59W (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 40A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-HSMT (3.2x3)
Package / Case: 8-PowerVDFN

Paket: -

Lager71.463

MOSFET (Metal Oxide)

60 V

40A (Tc)

4.5V, 10V

2.5V @ 1mA

18.8 nC @ 10 V

1320 pF @ 30 V

±20V

-

59W (Tc)

7.1mOhm @ 40A, 10V

150°C (TJ)

Surface Mount

8-HSMT (3.2x3)

8-PowerVDFN

RH6P030BG

Rohm Semiconductor

TRANS MOSFET N-CH SMD

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Request a Quote

-

RQ3L070BGTB1

Rohm Semiconductor

NCH 60V 20A, HSMT8G, POWER MOSFE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs: 24.7mOhm @ 7A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-HSMT (3.2x3)
Package / Case: 8-PowerVDFN

Paket: -

Lager8.835

MOSFET (Metal Oxide)

60 V

7A (Ta), 20A (Tc)

4.5V, 10V

2.5V @ 1mA

7.6 nC @ 10 V

460 pF @ 30 V

±20V

-

2W (Ta), 15W (Tc)

24.7mOhm @ 7A, 10V

150°C (TJ)

Surface Mount

8-HSMT (3.2x3)

8-PowerVDFN

R6524KNX3C16

Rohm Semiconductor

650V 24A, TO-220AB, HIGH-SPEED S

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 750µA
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 253W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

Paket: -

Lager444

MOSFET (Metal Oxide)

650 V

24A (Tc)

10V

5V @ 750µA

45 nC @ 10 V

1850 pF @ 25 V

±20V

-

253W (Tc)

185mOhm @ 11.3A, 10V

150°C (TJ)

Through Hole

TO-220AB

TO-220-3

RX3G07CGNC16

Rohm Semiconductor

MOSFET N-CH 40V 70A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 70A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

Paket: -

Request a Quote

MOSFET (Metal Oxide)

40 V

70A (Tc)

-

2.5V @ 500µA

32 nC @ 10 V

2410 pF @ 20 V

±20V

-

78W (Tc)

4.7mOhm @ 70A, 10V

150°C (TJ)

Through Hole

TO-220AB

TO-220-3

R6530KNX3C16

Rohm Semiconductor

MOSFET N-CH 650V 30A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 960µA
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 307W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

Paket: -

Lager2.991

MOSFET (Metal Oxide)

650 V

30A (Tc)

10V

5V @ 960µA

56 nC @ 10 V

2350 pF @ 25 V

±20V

-

307W (Tc)

140mOhm @ 14.5A, 10V

150°C (TJ)

Through Hole

TO-220AB

TO-220-3

R6009RND3TL1

Rohm Semiconductor

600V 9A TO-252, PRESTOMOS WITH I

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 100 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 4.5A, 15V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Paket: -

Lager7.860

MOSFET (Metal Oxide)

600 V

9A (Tc)

15V

7V @ 5.5mA

22 nC @ 15 V

640 pF @ 100 V

±30V

-

125W (Tc)

665mOhm @ 4.5A, 15V

150°C (TJ)

Surface Mount

TO-252

TO-252-3, DPAK (2 Leads + Tab), SC-63

R6020YNZ4C13

Rohm Semiconductor

NCH 600V 20A, TO-247, POWER MOSF

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs(th) (Max) @ Id: 6V @ 1.65mA
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 182W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 12V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

Paket: -

Lager1.800

MOSFET (Metal Oxide)

600 V

20A (Tc)

10V, 12V

6V @ 1.65mA

28 nC @ 10 V

1200 pF @ 100 V

±30V

-

182W (Tc)

185mOhm @ 6A, 12V

150°C (TJ)

Through Hole

TO-247

TO-247-3

R6006JNJGTL

Rohm Semiconductor

MOSFET N-CH 600V 6A LPTS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs(th) (Max) @ Id: 7V @ 800µA
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LPTS
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Paket: -

Lager3.294

MOSFET (Metal Oxide)

600 V

6A (Tc)

15V

7V @ 800µA

15.5 nC @ 15 V

410 pF @ 100 V

±30V

-

86W (Tc)

936mOhm @ 3A, 15V

-55°C ~ 150°C (TJ)

Surface Mount

LPTS

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

R6055VNXC7G

Rohm Semiconductor

600V 23A TO-220FM, PRESTOMOS WIT

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs(th) (Max) @ Id: 6.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 100 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 71mOhm @ 16A, 15V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FM
Package / Case: TO-220-3 Full Pack

Paket: -

Lager3.042

MOSFET (Metal Oxide)

600 V

23A (Tc)

10V, 15V

6.5V @ 1.5mA

80 nC @ 10 V

3700 pF @ 100 V

±30V

-

100W (Tc)

71mOhm @ 16A, 15V

150°C (TJ)

Through Hole

TO-220FM

TO-220-3 Full Pack

RD3G500GNTL

Rohm Semiconductor

MOSFET N-CH 40V 50A TO252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22800 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Paket: -

Lager7.434

MOSFET (Metal Oxide)

40 V

50A (Tc)

4.5V, 10V

2.5V @ 1mA

31 nC @ 10 V

22800 pF @ 20 V

±20V

-

35W (Tc)

4.9mOhm @ 50A, 10V

150°C (TJ)

Surface Mount

TO-252

TO-252-3, DPAK (2 Leads + Tab), SC-63

R6055VNZ4C13

Rohm Semiconductor

600V 55A TO-247, PRESTOMOS WITH

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs(th) (Max) @ Id: 6.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 100 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 543W (Tc)
Rds On (Max) @ Id, Vgs: 71mOhm @ 16A, 15V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

Paket: -

Lager2.031

MOSFET (Metal Oxide)

600 V

55A (Tc)

10V, 15V

6.5V @ 1.5mA

80 nC @ 10 V

3700 pF @ 100 V

±30V

-

543W (Tc)

71mOhm @ 16A, 15V

150°C (TJ)

Through Hole

TO-247

TO-247-3

RD3T075CNTL1

Rohm Semiconductor

MOSFET N-CH 200V 7.5A TO252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 325mOhm @ 3.75A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Paket: -

Lager4.416

MOSFET (Metal Oxide)

200 V

7.5A (Tc)

10V

5.25V @ 1mA

15 nC @ 10 V

755 pF @ 25 V

±30V

-

52W (Tc)

325mOhm @ 3.75A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-252

TO-252-3, DPAK (2 Leads + Tab), SC-63

RU1L002SNTL

Rohm Semiconductor

MOSFET N-CH 60V 250MA UMT3F

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: UMT3F
Package / Case: SC-85

Paket: -

Lager91.881

MOSFET (Metal Oxide)

60 V

250mA (Ta)

2.5V, 10V

2.3V @ 1mA

-

15 pF @ 25 V

±20V

-

200mW (Ta)

2.4Ohm @ 250mA, 10V

150°C (TJ)

Surface Mount

UMT3F

SC-85

RSR030N06HZGTL

Rohm Semiconductor

MOSFET N-CH 60V 3A TSMT3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSMT3
Package / Case: SC-96

Paket: -

Lager44.214

MOSFET (Metal Oxide)

60 V

3A (Ta)

4V, 10V

2.5V @ 1mA

5 nC @ 5 V

380 pF @ 10 V

±20V

-

700mW (Ta)

85mOhm @ 3A, 10V

150°C (TJ)

Surface Mount

TSMT3

SC-96

RD3H160SPTL1

Rohm Semiconductor

MOSFET P-CH 45V 16A TO252

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 45 V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 16A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Paket: -

Lager16.656

MOSFET (Metal Oxide)

45 V

16A (Ta)

4V, 10V

3V @ 1mA

16 nC @ 5 V

2000 pF @ 10 V

±20V

-

20W (Tc)

50mOhm @ 16A, 10V

150°C (TJ)

Surface Mount

TO-252

TO-252-3, DPAK (2 Leads + Tab), SC-63

R6011ENXC7G

Rohm Semiconductor

600V 11A TO-220FM, LOW-NOISE POW

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 53W (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FM
Package / Case: TO-220-3 Full Pack

Paket: -

Lager2.994

MOSFET (Metal Oxide)

600 V

11A (Ta)

10V

4V @ 1mA

32 nC @ 10 V

670 pF @ 25 V

±20V

-

53W (Tc)

390mOhm @ 3.8A, 10V

150°C (TJ)

Through Hole

TO-220FM

TO-220-3 Full Pack

RD3U041AAFRATL

Rohm Semiconductor

MOSFET N-CH 250V 4A TO252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 29W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Paket: -

Lager4.011

MOSFET (Metal Oxide)

250 V

4A (Tc)

10V

5.5V @ 1mA

8.5 nC @ 10 V

350 pF @ 25 V

±30V

-

29W (Tc)

1.3Ohm @ 2A, 10V

150°C (TJ)

Surface Mount

TO-252

TO-252-3, DPAK (2 Leads + Tab), SC-63

SCT3040KLHRC11

Rohm Semiconductor

SICFET N-CH 1200V 55A TO247N

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs(th) (Max) @ Id: 5.6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V
Vgs (Max): +22V, -4V
FET Feature: -
Power Dissipation (Max): 262W
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247N
Package / Case: TO-247-3

Paket: -

Lager2.613

SiCFET (Silicon Carbide)

1200 V

55A (Tc)

18V

5.6V @ 10mA

107 nC @ 18 V

1337 pF @ 800 V

+22V, -4V

-

262W

52mOhm @ 20A, 18V

175°C (TJ)

Through Hole

TO-247N

TO-247-3

R6507KND3TL1

Rohm Semiconductor

HIGH-SPEED SWITCHING, NCH 650V 7

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Paket: -

Lager7.434

MOSFET (Metal Oxide)

650 V

7A (Tc)

10V

5V @ 200µA

14.5 nC @ 10 V

470 pF @ 25 V

±20V

-

78W (Tc)

665mOhm @ 2.4A, 10V

150°C (TJ)

Surface Mount

TO-252

TO-252-3, DPAK (2 Leads + Tab), SC-63

RSS065N03TB1

Rohm Semiconductor

MOSFET N-CH 30V 6.5A 8SOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.5A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)

Paket: -

Request a Quote

MOSFET (Metal Oxide)

30 V

6.5A (Ta)

4V, 10V

2.5V @ 1mA

8.6 nC @ 5 V

430 pF @ 10 V

±20V

-

2W (Ta)

27mOhm @ 6.5A, 10V

150°C

Surface Mount

8-SOP

8-SOIC (0.154", 3.90mm Width)

BSS138BKAHZGT116

Rohm Semiconductor

NCH 60V 400MA, SOT-23, SMALL SIG

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 680mOhm @ 400mA, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: -

Lager16.704

MOSFET (Metal Oxide)

60 V

400mA (Ta)

2.5V, 10V

2V @ 10µA

-

47 pF @ 30 V

±20V

-

350mW (Ta)

680mOhm @ 400mA, 10V

150°C (TJ)

Surface Mount

SOT-23

TO-236-3, SC-59, SOT-23-3

R6076ENZ4C13

Rohm Semiconductor

MOSFET N-CH 600V 76A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 735W (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 44.4A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

Paket: -

Lager1.401

MOSFET (Metal Oxide)

600 V

76A (Tc)

10V

4V @ 1mA

260 nC @ 10 V

6500 pF @ 25 V

±20V

-

735W (Tc)

42mOhm @ 44.4A, 10V

150°C (TJ)

Through Hole

TO-247

TO-247-3

RRR030P03HZGTL

Rohm Semiconductor

MOSFET P-CH 30V 3A TSMT3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSMT3
Package / Case: SC-96

Paket: -

Lager26.475

MOSFET (Metal Oxide)

30 V

3A (Ta)

4V, 10V

2.5V @ 1mA

5.2 nC @ 5 V

480 pF @ 10 V

±20V

-

700mW (Ta)

75mOhm @ 3A, 10V

150°C (TJ)

Surface Mount

TSMT3

SC-96

RQ7L055BGTCR

Rohm Semiconductor

NCH 60V 5.5A, TSMT8, POWER MOSFE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSMT8
Package / Case: 8-SMD, Flat Lead

Paket: -

Lager8.910

MOSFET (Metal Oxide)

60 V

5.5A (Ta)

4.5V, 10V

2.5V @ 1mA

7.6 nC @ 10 V

460 pF @ 30 V

±20V

-

1.1W (Ta)

29mOhm @ 5.5A, 10V

150°C (TJ)

Surface Mount

TSMT8

8-SMD, Flat Lead

R8002ANJFRGTL

Rohm Semiconductor

MOSFET N-CH 800V 2A LPTS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 62W (Tc)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LPTS
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Paket: -

Lager2.250

MOSFET (Metal Oxide)

800 V

2A (Tc)

10V

5V @ 1mA

13 nC @ 10 V

250 pF @ 25 V

±30V

-

62W (Tc)

4.3Ohm @ 1A, 10V

150°C (TJ)

Surface Mount

LPTS

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

RX3L07BGNC16

Rohm Semiconductor

NCH 60V 70A, TO-220AB, POWER MOS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 70A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

Paket: -

Lager3.972

MOSFET (Metal Oxide)

60 V

70A (Tc)

4.5V, 10V

2.5V @ 50µA

55 nC @ 10 V

2600 pF @ 30 V

±20V

-

96W (Tc)

7.2mOhm @ 70A, 10V

150°C (TJ)

Through Hole

TO-220AB

TO-220-3

Teilenummer	Hersteller	Beschreibung	Paket	Lager	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
RX3P07CBHC16	Rohm Semiconductor	NCH 100V 70A, TO-220AB, POWER M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 135W (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Paket: -	Lager3.000	MOSFET (Metal Oxide)	100 V	70A (Tc)	6V, 10V	4V @ 1mA	73 nC @ 10 V	4650 pF @ 50 V	±20V	-	135W (Tc)	5.2mOhm @ 70A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
RQ1E050RPHZGTR	Rohm Semiconductor	PCH -30V -5A SMALL SIGNAL MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Supplier Device Package: TSMT8 Package / Case: 8-SMD, Flat Lead	Paket: -	Lager9.000	MOSFET (Metal Oxide)	30 V	5A (Ta)	4V, 10V	2.5V @ 1mA	13 nC @ 4 V	1300 pF @ 10 V	±20V	-	1.1W (Ta)	31mOhm @ 5A, 10V	-55°C ~ 150°C	Surface Mount	TSMT8	8-SMD, Flat Lead
RQ7P035ATTCR	Rohm Semiconductor	PCH -100V -3.5A POWER MOSFET : R FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 111mOhm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT8 Package / Case: 8-SMD, Flat Lead	Paket: -	Request a Quote	MOSFET (Metal Oxide)	100 V	3.5A (Ta)	4.5V, 10V	2.5V @ 1mA	40 nC @ 10 V	1540 pF @ 50 V	±20V	-	1.1W (Ta)	111mOhm @ 3.5A, 10V	150°C (TJ)	Surface Mount	TSMT8	8-SMD, Flat Lead
RH6L040BGTB1	Rohm Semiconductor	NCH 60V 65A, HSMT8, POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 59W (Tc) Rds On (Max) @ Id, Vgs: 7.1mOhm @ 40A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSMT (3.2x3) Package / Case: 8-PowerVDFN	Paket: -	Lager71.463	MOSFET (Metal Oxide)	60 V	40A (Tc)	4.5V, 10V	2.5V @ 1mA	18.8 nC @ 10 V	1320 pF @ 30 V	±20V	-	59W (Tc)	7.1mOhm @ 40A, 10V	150°C (TJ)	Surface Mount	8-HSMT (3.2x3)	8-PowerVDFN
RH6P030BG	Rohm Semiconductor	TRANS MOSFET N-CH SMD FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RQ3L070BGTB1	Rohm Semiconductor	NCH 60V 20A, HSMT8G, POWER MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 24.7mOhm @ 7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSMT (3.2x3) Package / Case: 8-PowerVDFN	Paket: -	Lager8.835	MOSFET (Metal Oxide)	60 V	7A (Ta), 20A (Tc)	4.5V, 10V	2.5V @ 1mA	7.6 nC @ 10 V	460 pF @ 30 V	±20V	-	2W (Ta), 15W (Tc)	24.7mOhm @ 7A, 10V	150°C (TJ)	Surface Mount	8-HSMT (3.2x3)	8-PowerVDFN
R6524KNX3C16	Rohm Semiconductor	650V 24A, TO-220AB, HIGH-SPEED S FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 750µA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 253W (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Paket: -	Lager444	MOSFET (Metal Oxide)	650 V	24A (Tc)	10V	5V @ 750µA	45 nC @ 10 V	1850 pF @ 25 V	±20V	-	253W (Tc)	185mOhm @ 11.3A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
RX3G07CGNC16	Rohm Semiconductor	MOSFET N-CH 40V 70A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 70A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Paket: -	Request a Quote	MOSFET (Metal Oxide)	40 V	70A (Tc)	-	2.5V @ 500µA	32 nC @ 10 V	2410 pF @ 20 V	±20V	-	78W (Tc)	4.7mOhm @ 70A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
R6530KNX3C16	Rohm Semiconductor	MOSFET N-CH 650V 30A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 960µA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 307W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Paket: -	Lager2.991	MOSFET (Metal Oxide)	650 V	30A (Tc)	10V	5V @ 960µA	56 nC @ 10 V	2350 pF @ 25 V	±20V	-	307W (Tc)	140mOhm @ 14.5A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
R6009RND3TL1	Rohm Semiconductor	600V 9A TO-252, PRESTOMOS WITH I FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 7V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 665mOhm @ 4.5A, 15V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Paket: -	Lager7.860	MOSFET (Metal Oxide)	600 V	9A (Tc)	15V	7V @ 5.5mA	22 nC @ 15 V	640 pF @ 100 V	±30V	-	125W (Tc)	665mOhm @ 4.5A, 15V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
R6020YNZ4C13	Rohm Semiconductor	NCH 600V 20A, TO-247, POWER MOSF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs(th) (Max) @ Id: 6V @ 1.65mA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 182W (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 12V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Paket: -	Lager1.800	MOSFET (Metal Oxide)	600 V	20A (Tc)	10V, 12V	6V @ 1.65mA	28 nC @ 10 V	1200 pF @ 100 V	±30V	-	182W (Tc)	185mOhm @ 6A, 12V	150°C (TJ)	Through Hole	TO-247	TO-247-3
R6006JNJGTL	Rohm Semiconductor	MOSFET N-CH 600V 6A LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 7V @ 800µA Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Paket: -	Lager3.294	MOSFET (Metal Oxide)	600 V	6A (Tc)	15V	7V @ 800µA	15.5 nC @ 15 V	410 pF @ 100 V	±30V	-	86W (Tc)	936mOhm @ 3A, 15V	-55°C ~ 150°C (TJ)	Surface Mount	LPTS	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
R6055VNXC7G	Rohm Semiconductor	600V 23A TO-220FM, PRESTOMOS WIT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs(th) (Max) @ Id: 6.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 71mOhm @ 16A, 15V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	Paket: -	Lager3.042	MOSFET (Metal Oxide)	600 V	23A (Tc)	10V, 15V	6.5V @ 1.5mA	80 nC @ 10 V	3700 pF @ 100 V	±30V	-	100W (Tc)	71mOhm @ 16A, 15V	150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
RD3G500GNTL	Rohm Semiconductor	MOSFET N-CH 40V 50A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 22800 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Paket: -	Lager7.434	MOSFET (Metal Oxide)	40 V	50A (Tc)	4.5V, 10V	2.5V @ 1mA	31 nC @ 10 V	22800 pF @ 20 V	±20V	-	35W (Tc)	4.9mOhm @ 50A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
R6055VNZ4C13	Rohm Semiconductor	600V 55A TO-247, PRESTOMOS WITH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs(th) (Max) @ Id: 6.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 543W (Tc) Rds On (Max) @ Id, Vgs: 71mOhm @ 16A, 15V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Paket: -	Lager2.031	MOSFET (Metal Oxide)	600 V	55A (Tc)	10V, 15V	6.5V @ 1.5mA	80 nC @ 10 V	3700 pF @ 100 V	±30V	-	543W (Tc)	71mOhm @ 16A, 15V	150°C (TJ)	Through Hole	TO-247	TO-247-3
RD3T075CNTL1	Rohm Semiconductor	MOSFET N-CH 200V 7.5A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.25V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 325mOhm @ 3.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Paket: -	Lager4.416	MOSFET (Metal Oxide)	200 V	7.5A (Tc)	10V	5.25V @ 1mA	15 nC @ 10 V	755 pF @ 25 V	±30V	-	52W (Tc)	325mOhm @ 3.75A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
RU1L002SNTL	Rohm Semiconductor	MOSFET N-CH 60V 250MA UMT3F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UMT3F Package / Case: SC-85	Paket: -	Lager91.881	MOSFET (Metal Oxide)	60 V	250mA (Ta)	2.5V, 10V	2.3V @ 1mA	-	15 pF @ 25 V	±20V	-	200mW (Ta)	2.4Ohm @ 250mA, 10V	150°C (TJ)	Surface Mount	UMT3F	SC-85
RSR030N06HZGTL	Rohm Semiconductor	MOSFET N-CH 60V 3A TSMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Paket: -	Lager44.214	MOSFET (Metal Oxide)	60 V	3A (Ta)	4V, 10V	2.5V @ 1mA	5 nC @ 5 V	380 pF @ 10 V	±20V	-	700mW (Ta)	85mOhm @ 3A, 10V	150°C (TJ)	Surface Mount	TSMT3	SC-96
RD3H160SPTL1	Rohm Semiconductor	MOSFET P-CH 45V 16A TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 16A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Paket: -	Lager16.656	MOSFET (Metal Oxide)	45 V	16A (Ta)	4V, 10V	3V @ 1mA	16 nC @ 5 V	2000 pF @ 10 V	±20V	-	20W (Tc)	50mOhm @ 16A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
R6011ENXC7G	Rohm Semiconductor	600V 11A TO-220FM, LOW-NOISE POW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 53W (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	Paket: -	Lager2.994	MOSFET (Metal Oxide)	600 V	11A (Ta)	10V	4V @ 1mA	32 nC @ 10 V	670 pF @ 25 V	±20V	-	53W (Tc)	390mOhm @ 3.8A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
RD3U041AAFRATL	Rohm Semiconductor	MOSFET N-CH 250V 4A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 29W (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Paket: -	Lager4.011	MOSFET (Metal Oxide)	250 V	4A (Tc)	10V	5.5V @ 1mA	8.5 nC @ 10 V	350 pF @ 25 V	±30V	-	29W (Tc)	1.3Ohm @ 2A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
SCT3040KLHRC11	Rohm Semiconductor	SICFET N-CH 1200V 55A TO247N FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.6V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 262W Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	Paket: -	Lager2.613	SiCFET (Silicon Carbide)	1200 V	55A (Tc)	18V	5.6V @ 10mA	107 nC @ 18 V	1337 pF @ 800 V	+22V, -4V	-	262W	52mOhm @ 20A, 18V	175°C (TJ)	Through Hole	TO-247N	TO-247-3
R6507KND3TL1	Rohm Semiconductor	HIGH-SPEED SWITCHING, NCH 650V 7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Paket: -	Lager7.434	MOSFET (Metal Oxide)	650 V	7A (Tc)	10V	5V @ 200µA	14.5 nC @ 10 V	470 pF @ 25 V	±20V	-	78W (Tc)	665mOhm @ 2.4A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
RSS065N03TB1	Rohm Semiconductor	MOSFET N-CH 30V 6.5A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 6.5A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Paket: -	Request a Quote	MOSFET (Metal Oxide)	30 V	6.5A (Ta)	4V, 10V	2.5V @ 1mA	8.6 nC @ 5 V	430 pF @ 10 V	±20V	-	2W (Ta)	27mOhm @ 6.5A, 10V	150°C	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
BSS138BKAHZGT116	Rohm Semiconductor	NCH 60V 400MA, SOT-23, SMALL SIG FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 2V @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 680mOhm @ 400mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Paket: -	Lager16.704	MOSFET (Metal Oxide)	60 V	400mA (Ta)	2.5V, 10V	2V @ 10µA	-	47 pF @ 30 V	±20V	-	350mW (Ta)	680mOhm @ 400mA, 10V	150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
R6076ENZ4C13	Rohm Semiconductor	MOSFET N-CH 600V 76A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 735W (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 44.4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Paket: -	Lager1.401	MOSFET (Metal Oxide)	600 V	76A (Tc)	10V	4V @ 1mA	260 nC @ 10 V	6500 pF @ 25 V	±20V	-	735W (Tc)	42mOhm @ 44.4A, 10V	150°C (TJ)	Through Hole	TO-247	TO-247-3
RRR030P03HZGTL	Rohm Semiconductor	MOSFET P-CH 30V 3A TSMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Paket: -	Lager26.475	MOSFET (Metal Oxide)	30 V	3A (Ta)	4V, 10V	2.5V @ 1mA	5.2 nC @ 5 V	480 pF @ 10 V	±20V	-	700mW (Ta)	75mOhm @ 3A, 10V	150°C (TJ)	Surface Mount	TSMT3	SC-96
RQ7L055BGTCR	Rohm Semiconductor	NCH 60V 5.5A, TSMT8, POWER MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT8 Package / Case: 8-SMD, Flat Lead	Paket: -	Lager8.910	MOSFET (Metal Oxide)	60 V	5.5A (Ta)	4.5V, 10V	2.5V @ 1mA	7.6 nC @ 10 V	460 pF @ 30 V	±20V	-	1.1W (Ta)	29mOhm @ 5.5A, 10V	150°C (TJ)	Surface Mount	TSMT8	8-SMD, Flat Lead
R8002ANJFRGTL	Rohm Semiconductor	MOSFET N-CH 800V 2A LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 62W (Tc) Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Paket: -	Lager2.250	MOSFET (Metal Oxide)	800 V	2A (Tc)	10V	5V @ 1mA	13 nC @ 10 V	250 pF @ 25 V	±30V	-	62W (Tc)	4.3Ohm @ 1A, 10V	150°C (TJ)	Surface Mount	LPTS	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RX3L07BGNC16	Rohm Semiconductor	NCH 60V 70A, TO-220AB, POWER MOS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 70A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Paket: -	Lager3.972	MOSFET (Metal Oxide)	60 V	70A (Tc)	4.5V, 10V	2.5V @ 50µA	55 nC @ 10 V	2600 pF @ 30 V	±20V	-	96W (Tc)	7.2mOhm @ 70A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3