STMicroelectronics Produkte - Transistoren - FETs, MOSFET - Einzeln

STH140N8F7-2

STMicroelectronics

MOSFET N-CH 80V 90A H2PAK-2

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6340pF @ 40V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 4 mOhm @ 45A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: H2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant

Paket: TO-263-3, D2Pak (2 Leads + Tab) Variant

STF6N62K3

STMicroelectronics

MOSFET N-CH 620V 5.5A TO-220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 620V
• Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 875pF @ 50V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 30W (Tc)
• Rds On (Max) @ Id, Vgs: 1.28 Ohm @ 2.8A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FP
• Package / Case: TO-220-3 Full Pack

Paket: TO-220-3 Full Pack

STU13N65M2

STMicroelectronics

MOSFET N-CH 650V 10A IPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 100V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 110W (Tc)
• Rds On (Max) @ Id, Vgs: 430 mOhm @ 5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: IPAK (TO-251)
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

Paket: TO-251-3 Short Leads, IPak, TO-251AA

STB30NF20L

STMicroelectronics

MOSFET N CH 200V 30A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 75 mOhm @ 15A, 5V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

STD4NK80Z-1

STMicroelectronics

MOSFET N-CH 800V 3A IPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 80W (Tc)
• Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 1.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I-Pak
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

Paket: TO-251-3 Short Leads, IPak, TO-251AA

STD2NC45-1

STMicroelectronics

MOSFET N-CH 450V 1.5A IPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 450V
• Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.7V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 30W (Tc)
• Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 500mA, 10V
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I-Pak
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

Paket: TO-251-3 Short Leads, IPak, TO-251AA

STD40NF10

STMicroelectronics

MOSFET N-CH 100V 50A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 28 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

STD13N65M2

STMicroelectronics

MOSFET N-CH 650V 10A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 100V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 110W (Tc)
• Rds On (Max) @ Id, Vgs: 430 mOhm @ 5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

STD16NF06T4

STMicroelectronics

MOSFET N-CH 60V 16A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14.1nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 70 mOhm @ 8A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

STD18NF03L

STMicroelectronics

MOSFET N-CH 30V 17A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 30W (Tc)
• Rds On (Max) @ Id, Vgs: 50 mOhm @ 8.5A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

STQ2NK60ZR-AP

STMicroelectronics

MOSFET N-CH 600V 0.4A TO-92

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 3W (Tc)
• Rds On (Max) @ Id, Vgs: 8 Ohm @ 700mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-92-3
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

STE53NC50

STMicroelectronics

MOSFET N-CH 500V 53A ISOTOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 53A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 434nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 460W (Tc)
• Rds On (Max) @ Id, Vgs: 80 mOhm @ 27A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: ISOTOP?
• Package / Case: ISOTOP

Paket: ISOTOP

STW62N65M5

STMicroelectronics

MOSFET N-CH 650V TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 142nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6420pF @ 100V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 330W (Tc)
• Rds On (Max) @ Id, Vgs: 49 mOhm @ 23A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

Paket: TO-247-3

SCT20N120

STMicroelectronics

MOSFET N-CH 1200V 20A HIP247

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 3.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 45nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 400V
• Vgs (Max): +25V, -10V
• FET Feature: -
• Power Dissipation (Max): 175W (Tc)
• Rds On (Max) @ Id, Vgs: 290 mOhm @ 10A, 20V
• Operating Temperature: -55°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: HiP247?
• Package / Case: TO-247-3

Paket: TO-247-3

STW48NM60N

STMicroelectronics

MOSFET N-CH 600V 39A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4285pF @ 50V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 330W (Tc)
• Rds On (Max) @ Id, Vgs: 70 mOhm @ 20A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

Paket: TO-247-3

STW47NM60ND

STMicroelectronics

MOSFET N-CH 600V 35A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 50V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 255W (Tc)
• Rds On (Max) @ Id, Vgs: 88 mOhm @ 17.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

Paket: TO-247-3

STW30N65M5

STMicroelectronics

MOSFET N-CH 650V 22A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 100V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 140W (Tc)
• Rds On (Max) @ Id, Vgs: 139 mOhm @ 11A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

Paket: TO-247-3

STFW40N60M2

STMicroelectronics

MOSFET N-CH 600V 34A TO-3PF

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 63W (Tc)
• Rds On (Max) @ Id, Vgs: 88 mOhm @ 17A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3PF
• Package / Case: TO-3P-3 Full Pack

Paket: TO-3P-3 Full Pack

STW48N60M2

STMicroelectronics

MOSFET N-CH 600V 42A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3060pF @ 100V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 70 mOhm @ 21A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

Paket: TO-247-3

STW34NM60N

STMicroelectronics

MOSFET N-CH 600V 29A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2722pF @ 100V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 105 mOhm @ 14.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

Paket: TO-247-3

STW25NM60ND

STMicroelectronics

MOSFET N-CH 600V 21A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 50V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 160W (Tc)
• Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

Paket: TO-247-3

STF40N60M2

STMicroelectronics

MOSFET N-CH 600V 34A TO220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 88 mOhm @ 17A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FP
• Package / Case: TO-220-3 Full Pack

Paket: TO-220-3 Full Pack

STW56N65M2

STMicroelectronics

MOSFET N-CH 650V 49A TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 100V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 358W (Tc)
• Rds On (Max) @ Id, Vgs: 62 mOhm @ 24.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

Paket: TO-247-3

STW56N60M2-4

STMicroelectronics

MOSFET N-CH 600V 52A TO247-4

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 100V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 350W (Tc)
• Rds On (Max) @ Id, Vgs: 55 mOhm @ 26A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-4L
• Package / Case: TO-247-4

Paket: TO-247-4

STP34NM60N

STMicroelectronics

MOSFET N-CH 600V 29A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2722pF @ 100V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 105 mOhm @ 14.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3

Paket: TO-220-3

STF45N65M5

STMicroelectronics

MOSFET N-CH 650V 35A TO220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3375pF @ 100V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 78 mOhm @ 19.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FP
• Package / Case: TO-220-3 Full Pack

Paket: TO-220-3 Full Pack

STP21N90K5

STMicroelectronics

MOSFET N-CH 900V 18.5A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1645pF @ 100V
• Vgs (Max): ±30V
• FET Feature: Current Sensing
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 299 mOhm @ 9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3

Paket: TO-220-3

STF26NM60N

STMicroelectronics

MOSFET N-CH 600V 20A TO-220F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 35W (Tc)
• Rds On (Max) @ Id, Vgs: 165 mOhm @ 10A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FP
• Package / Case: TO-220-3 Full Pack

Paket: TO-220-3 Full Pack