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STMicroelectronics Produkte - Transistoren - FETs, MOSFET - Einzeln

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Beschreibung
Paket
Lager
Anzahl
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
STW48N60M2-4
STMicroelectronics

MOSFET N-CH 600V 42A TO247-4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3060pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 21A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
Paket: TO-247-4
Lager7.080
MOSFET (Metal Oxide)
600V
42A (Tc)
10V
4V @ 250µA
70nC @ 10V
3060pF @ 100V
±25V
-
300W (Tc)
70 mOhm @ 21A, 10V
150°C (TJ)
Through Hole
TO-247-4L
TO-247-4
hot STW38N65M5
STMicroelectronics

MOSFET N-CH 650V 30A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 95 mOhm @ 15A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager5.504
MOSFET (Metal Oxide)
650V
30A (Tc)
10V
5V @ 250µA
71nC @ 10V
3000pF @ 100V
±25V
-
190W (Tc)
95 mOhm @ 15A, 10V
150°C (TJ)
Through Hole
TO-247
TO-247-3
hot STW35N65M5
STMicroelectronics

MOSFET N-CH 650V 27A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Rds On (Max) @ Id, Vgs: 98 mOhm @ 13.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager410.556
MOSFET (Metal Oxide)
650V
27A (Tc)
10V
5V @ 250µA
83nC @ 10V
3750pF @ 100V
±25V
-
160W (Tc)
98 mOhm @ 13.5A, 10V
150°C (TJ)
Through Hole
TO-247-3
TO-247-3
STP32N65M5
STMicroelectronics

MOSFET N-CH 650V 24A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3320pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 119 mOhm @ 12A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager9.936
MOSFET (Metal Oxide)
650V
24A (Tc)
10V
5V @ 250µA
72nC @ 10V
3320pF @ 100V
±25V
-
150W (Tc)
119 mOhm @ 12A, 10V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot STP25N80K5
STMicroelectronics

MOSFET N-CH 800V 19.5A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 260 mOhm @ 19.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager9.924
MOSFET (Metal Oxide)
800V
19.5A (Tc)
10V
5V @ 100µA
40nC @ 10V
1600pF @ 100V
±30V
-
250W (Tc)
260 mOhm @ 19.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
hot STW30NM50N
STMicroelectronics

MOSFET N-CH 500V 27A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 115 mOhm @ 13.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager473.820
MOSFET (Metal Oxide)
500V
27A (Tc)
10V
4V @ 250µA
94nC @ 10V
2740pF @ 50V
±25V
-
190W (Tc)
115 mOhm @ 13.5A, 10V
150°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot STP34N65M5
STMicroelectronics

MOSFET N-CH 650V 28A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 62.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 14A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager12.600
MOSFET (Metal Oxide)
650V
28A (Tc)
10V
5V @ 250µA
62.5nC @ 10V
2700pF @ 100V
±25V
-
190W (Tc)
110 mOhm @ 14A, 10V
150°C (TJ)
Through Hole
TO-220
TO-220-3
STFI40N60M2
STMicroelectronics

MOSFET N-CH 600V 34A I2PAKFP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 88 mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAKFP (TO-281)
  • Package / Case: TO-262-3 Full Pack, I2Pak
Paket: TO-262-3 Full Pack, I2Pak
Lager7.128
MOSFET (Metal Oxide)
600V
34A (Tc)
10V
4V @ 250µA
57nC @ 10V
2500pF @ 100V
±25V
-
40W (Tc)
88 mOhm @ 17A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I2PAKFP (TO-281)
TO-262-3 Full Pack, I2Pak
STF38N65M5
STMicroelectronics

MOSFET N-CH 650V 30A TO-220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 95 mOhm @ 15A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
Paket: TO-220-3 Full Pack
Lager7.524
MOSFET (Metal Oxide)
650V
30A (Tc)
10V
5V @ 250µA
71nC @ 10V
3000pF @ 100V
±25V
-
35W (Tc)
95 mOhm @ 15A, 10V
150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
hot STP38N65M5
STMicroelectronics

MOSFET N-CH 650V 30A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 95 mOhm @ 15A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager7.040
MOSFET (Metal Oxide)
650V
30A (Tc)
10V
5V @ 250µA
71nC @ 10V
3000pF @ 100V
±25V
-
190W (Tc)
95 mOhm @ 15A, 10V
150°C (TJ)
Through Hole
TO-220
TO-220-3
STF35N65M5
STMicroelectronics

MOSFET N-CH 650V 27A TO-220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 98 mOhm @ 13.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
Paket: TO-220-3 Full Pack
Lager16.200
MOSFET (Metal Oxide)
650V
27A (Tc)
10V
5V @ 250µA
83nC @ 10V
3750pF @ 100V
±25V
-
40W (Tc)
98 mOhm @ 13.5A, 10V
150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
hot STF34NM60N
STMicroelectronics

MOSFET N-CH 600V 29.0A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 31.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2722pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 14.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
Paket: TO-220-3 Full Pack
Lager392.304
MOSFET (Metal Oxide)
600V
31.5A (Tc)
10V
4V @ 250µA
84nC @ 10V
2722pF @ 100V
±25V
-
40W (Tc)
105 mOhm @ 14.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
hot STF28NM60ND
STMicroelectronics

MOSFET N-CH 600V 23A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 62.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 11.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
Paket: TO-220-3 Full Pack
Lager3.456
MOSFET (Metal Oxide)
600V
23A (Tc)
10V
5V @ 250µA
62.5nC @ 10V
2090pF @ 100V
±25V
-
35W (Tc)
150 mOhm @ 11.5A, 10V
150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
STFI6N65K3
STMicroelectronics

MOSFET N-CH 650V 5.4A I2PAKFP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 2.7A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAKFP (TO-281)
  • Package / Case: TO-262-3 Full Pack, I2Pak
Paket: TO-262-3 Full Pack, I2Pak
Lager11.076
MOSFET (Metal Oxide)
650V
5.4A (Tc)
10V
4.5V @ 50µA
33nC @ 10V
880pF @ 50V
±30V
-
30W (Tc)
1.3 Ohm @ 2.7A, 10V
150°C (TJ)
Through Hole
I2PAKFP (TO-281)
TO-262-3 Full Pack, I2Pak
STP26NM60ND
STMicroelectronics

MOSFET N-CH 600V 21A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 54.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1817pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 175 mOhm @ 10.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager20.040
MOSFET (Metal Oxide)
600V
21A (Tc)
10V
5V @ 250µA
54.6nC @ 10V
1817pF @ 100V
±25V
-
190W (Tc)
175 mOhm @ 10.5A, 10V
150°C (TJ)
Through Hole
TO-220
TO-220-3
STFW38N65M5
STMicroelectronics

MOSFET N-CH 650V 30A TO-3PF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 57W (Tc)
  • Rds On (Max) @ Id, Vgs: 95 mOhm @ 15A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
Paket: TO-3P-3 Full Pack
Lager8.424
MOSFET (Metal Oxide)
650V
30A (Tc)
10V
5V @ 250µA
71nC @ 10V
3000pF @ 100V
±25V
-
57W (Tc)
95 mOhm @ 15A, 10V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
hot STI32N65M5
STMicroelectronics

MOSFET N-CH 650V 24A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3320pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 119 mOhm @ 12A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Paket: TO-262-3 Long Leads, I2Pak, TO-262AA
Lager6.372
MOSFET (Metal Oxide)
650V
24A (Tc)
10V
5V @ 250µA
72nC @ 10V
3320pF @ 100V
±25V
-
150W (Tc)
119 mOhm @ 12A, 10V
150°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
hot STF18NM80
STMicroelectronics

MOSFET N-CH 800V 17A TO-220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 295 mOhm @ 8.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
Paket: TO-220-3 Full Pack
Lager23.904
MOSFET (Metal Oxide)
800V
17A (Tc)
10V
5V @ 250µA
70nC @ 10V
2070pF @ 50V
±30V
-
40W (Tc)
295 mOhm @ 8.5A, 10V
150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
STI30N65M5
STMicroelectronics

MOSFET N-CH 650V 22A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Rds On (Max) @ Id, Vgs: 139 mOhm @ 11A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Paket: TO-262-3 Long Leads, I2Pak, TO-262AA
Lager20.316
MOSFET (Metal Oxide)
650V
22A (Tc)
10V
5V @ 250µA
64nC @ 10V
2880pF @ 100V
±25V
-
140W (Tc)
139 mOhm @ 11A, 10V
150°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
hot STW15N95K5
STMicroelectronics

MOSFET N-CH 950V 12A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 950V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 500 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager4.080
MOSFET (Metal Oxide)
950V
12A (Tc)
10V
5V @ 100µA
40nC @ 10V
900pF @ 100V
±30V
-
170W (Tc)
500 mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
STW26NM60ND
STMicroelectronics

MOSFET N-CH 600V 21A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 54.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1817pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 175 mOhm @ 10.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager6.936
MOSFET (Metal Oxide)
600V
21A (Tc)
10V
5V @ 250µA
54.6nC @ 10V
1817pF @ 100V
±25V
-
190W (Tc)
175 mOhm @ 10.5A, 10V
150°C (TJ)
Through Hole
TO-247
TO-247-3
hot STW28NM60ND
STMicroelectronics

MOSFET N-CH 600V 23A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 62.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 11.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager6.192
MOSFET (Metal Oxide)
600V
23A (Tc)
10V
5V @ 250µA
62.5nC @ 10V
2090pF @ 100V
±25V
-
190W (Tc)
150 mOhm @ 11.5A, 10V
150°C (TJ)
Through Hole
TO-247
TO-247-3
hot STW24NM60N
STMicroelectronics

MOSFET N-CH 600V 17A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager8.424
MOSFET (Metal Oxide)
600V
17A (Tc)
10V
4V @ 250µA
46nC @ 10V
1400pF @ 50V
±30V
-
125W (Tc)
190 mOhm @ 8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
hot STP260N6F6
STMicroelectronics

MOSFET N-CH 60V 120A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager439.200
MOSFET (Metal Oxide)
60V
120A (Tc)
10V
4V @ 250µA
183nC @ 10V
11400pF @ 25V
±20V
-
300W (Tc)
3 mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220
TO-220-3
STW15NM60ND
STMicroelectronics

MOSFET N-CH 600V 14A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 299 mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager9.252
MOSFET (Metal Oxide)
600V
14A (Tc)
10V
5V @ 250µA
40nC @ 10V
1250pF @ 50V
±25V
-
125W (Tc)
299 mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
STF26NM60ND
STMicroelectronics

MOSFET N-CH 600V 21A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 54.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1817pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 175 mOhm @ 10.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
Paket: TO-220-3 Full Pack
Lager17.760
MOSFET (Metal Oxide)
600V
21A (Tc)
10V
5V @ 250µA
54.6nC @ 10V
1817pF @ 100V
±25V
-
35W (Tc)
175 mOhm @ 10.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
hot STP31N65M5
STMicroelectronics

MOSFET N-CH 650V 22A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 816pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 148 mOhm @ 11A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager5.296
MOSFET (Metal Oxide)
650V
22A (Tc)
10V
5V @ 250µA
45nC @ 10V
816pF @ 100V
±25V
-
150W (Tc)
148 mOhm @ 11A, 10V
150°C (TJ)
Through Hole
TO-220
TO-220-3
hot STF20NK50Z
STMicroelectronics

MOSFET N-CH 500V 17A TO-220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 119nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 270 mOhm @ 8.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
Paket: TO-220-3 Full Pack
Lager13.656
MOSFET (Metal Oxide)
500V
17A (Tc)
10V
4.5V @ 100µA
119nC @ 10V
2600pF @ 25V
±30V
-
40W (Tc)
270 mOhm @ 8.5A, 10V
150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack